6.4.5 Group III–nitride based quantum dots (Englisch)
Growth of group III–nitride compounds for nanostructure device applications
- Neue Suche nach: Höfling, C.
- Neue Suche nach: Schneider, C.
- Neue Suche nach: Forchel, A.
- Neue Suche nach: Klingshirn, C.
- Neue Suche nach: Höfling, C.
- Neue Suche nach: Schneider, C.
- Neue Suche nach: Forchel, A.
In:
Growth and Structuring
;
126-127
;
2013
- Aufsatz/Kapitel (Buch) / Elektronische Ressource
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Titel:6.4.5 Group III–nitride based quantum dots
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Untertitel:Growth of group III–nitride compounds for nanostructure device applications
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Beteiligte:Klingshirn, C. ( Herausgeber:in ) / Höfling, C. ( Autor:in ) / Schneider, C. ( Autor:in ) / Forchel, A. ( Autor:in )
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Erschienen in:Growth and Structuring ; 126-127
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Verlag:
- Neue Suche nach: Springer Berlin Heidelberg
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Erscheinungsort:Berlin, Heidelberg
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Erscheinungsdatum:01.01.2013
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Format / Umfang:2 pages
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz/Kapitel (Buch)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis E-Book
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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1 Introduction to semiconductor quantum structuresKlingshirn, C. et al. | 2013
- 4
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2 Growth of quasi two-dimensional structuresKlingshirn, C. et al. | 2013
- 19
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3 Growth and preparation of quasi one-dimensional systemsKlingshirn, C. et al. | 2013
- 25
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4 Growth and preparation of quasi zero-dimensional structuresKlingshirn, C. et al. | 2013
- 37
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5.1 General remarks on group IV semiconductors and industrial needsKasper, E. et al. | 2013
- 48
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5.2 Layer growth by epitaxyKasper, E. et al. | 2013
- 57
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5.3 Quasi-two-dimensional systems (quantum wells)Kasper, E. et al. | 2013
- 70
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5.4 One-dimensional systems (quantum wires)Kasper, E. et al. | 2013
- 75
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5.5 Zero-dimensional systems (quantum dots)Kasper, E. et al. | 2013
- 89
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6.1 Growth and preparation of quantum wells on GaAs substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 96
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6.2 Structuring and growth of quantum wires and nano-rods on GaAsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 102
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6.3 Growth and preparation of quantum dots and nano crystals on GaAs substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 115
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6.4.1 The role of substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 118
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6.4.2 Different growth techniquesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 120
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6.4.3 Group III–nitride quantum wellsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 123
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6.4.4 Group III–nitride based quantum wiresHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 126
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6.4.5 Group III–nitride based quantum dotsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 128
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6.4.6 Devices based on group III–nitridesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 130
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6.5.1 Growth of GaInAs quantum wells on InP substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 133
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6.5.2 Lithographically defined nanowiresHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 135
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6.5.3 Growth and fabrication of InGaAsP nanowhiskers on InP and silicon substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 137
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6.5.4 Site-controlled fabrication of nanowhiskers on InP substrateHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 139
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6.5.5 Epitaxial quantum dots grown on InP substrateHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 144
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6.5.6 Growth of InAs quantum dashesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 148
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6.5.7 Site-selective growth of InAs quantum dots on InPHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 150
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6.6 Growth of quantum wells and quantum dots on GaSb substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 152
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6.6.1 Growth of quantum wells in GaSb-based diode lasersHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 156
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6.6.2 Growth of quantum wells in GaSb-based type-II diode lasersHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 158
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6.6.3 Growth of quantum wells in GaSb-based quantum cascade laser structuresHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 160
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6.6.4 Growth of quantum wells in GaSb-based interband cascade lasersHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 163
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6.6.5 Growth of quantum wells in GaSb-based superlattice detectorsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 167
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6.6.6 Growth of quantum dots on GaSbHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 169
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6.7 Growth and preparation of quantum dots and quantum wells on GaP substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 177
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6.8 Properties of III-V materials on Si substrateHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 182
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6.9 Examples of III-V layers and nanostructures with diluted semiconductor materialsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 193
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7 Examples for the growth of nano-structures based on IIB-VI compoundsKlingshirn, C. et al. | 2013
- 196
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7.1.1 Quantum wells and superlattices containing HgKlingshirn, C. et al. | 2013
- 201
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7.1.2 Quantum wells and superlattices based on CdTe and its alloysKlingshirn, C. et al. | 2013
- 208
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7.1.3 Quantum wells and superlattices based on CdSe and its alloysKlingshirn, C. et al. | 2013
- 214
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7.1.4 Quantum wells and superlattices based on CdS and its alloysKlingshirn, C. et al. | 2013
- 219
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7.1.5 Quantum wells and superlattices based on ZnTe and its alloysKlingshirn, C. et al. | 2013
- 225
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7.1.6 Quantum wells and superlattices based on ZnSe and its alloysKlingshirn, C. et al. | 2013
- 235
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7.1.7 Quantum wells and superlattices based on ZnS and its alloysKlingshirn, C. et al. | 2013
- 237
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7.1.8 Quantum wells and superlattices based on ZnO and its alloysKlingshirn, C. et al. | 2013
- 243
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7.1.9 Quantum wells and superlattices containing diluted magnetic semiconductors in barrier and/or wellKlingshirn, C. et al. | 2013
- 253
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7.2.1 Quantum wires containing HgKlingshirn, C. et al. | 2013
- 256
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7.2.2 Quantum wires and nano rods based on CdTe and its alloysKlingshirn, C. et al. | 2013
- 260
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7.2.3 Quantum wires and nano rods based on CdSe and its alloysKlingshirn, C. et al. | 2013
- 265
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7.2.4 Quantum wires and nano rods based on CdS and its alloysKlingshirn, C. et al. | 2013
- 272
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7.2.5 Quantum wires and nano rods based on ZnTe and its alloysKlingshirn, C. et al. | 2013
- 274
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7.2.6 Quantum wires and nano rods based on ZnSe and its alloysKlingshirn, C. et al. | 2013
- 279
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7.2.7 Quantum wires and nano rods based on ZnS and its alloysKlingshirn, C. et al. | 2013
- 284
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7.2.8 Quantum wires and nano rods based on ZnO and its alloysKlingshirn, C. et al. | 2013
- 299
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7.2.9 Quantum wires and nano rods of diluted magnetic semiconductorsKlingshirn, C. et al. | 2013
- 304
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7.3.1 Quantum dots and nano crystals containing HgKlingshirn, C. et al. | 2013
- 306
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7.3.2 Quantum dots and nano crystals based on CdTe and its alloysKlingshirn, C. et al. | 2013
- 310
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7.3.3 Quantum dots and nano crystals based on CdSe and its alloysKlingshirn, C. et al. | 2013
- 318
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7.3.4 Quantum dots and nano crystals based on CdS and its alloysKlingshirn, C. et al. | 2013
- 328
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7.3.5 Quantum dots and nano crystals based on ZnTe and its alloysKlingshirn, C. et al. | 2013
- 330
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7.3.6 Quantum dots and nano crystals based on ZnSe and its alloysKlingshirn, C. et al. | 2013
- 335
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7.3.7 Quantum dots and nano crystals based on ZnS and its alloysKlingshirn, C. et al. | 2013
- 339
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7.3.8 Quantum dots and nano crystals based on ZnO and its alloysKlingshirn, C. et al. | 2013
- 348
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7.3.9 Quantum dots and nano crystals of diluted magnetic semiconductorsKlingshirn, C. et al. | 2013
- 352
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7.4.1 Self-assembled quantum dots: IntroductionHenneberger, F. et al. | 2013
- 355
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7.4.2 CdSe/ZnSe quantum dotsHenneberger, F. et al. | 2013
- 361
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7.4.3 CdTe/ZnTe quantum dotsHenneberger, F. et al. | 2013
- 364
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7.4.4 Diluted magnetic II-VI quantum dotsHenneberger, F. et al. | 2013
- 367
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7.4.5 Other II-VI heterosystemsHenneberger, F. et al. | 2013
- 370
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8.1 Examples for I-VII semiconductor compounds: General propertiesHönerlage, B. / Gilliot, P. et al. | 2013
- 373
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8.2 Quantum-well structuresHönerlage, B. / Gilliot, P. et al. | 2013
- 384
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8.3 Quantum dotsHönerlage, B. / Gilliot, P. et al. | 2013
- 415
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9.1 IV-VI semiconductors: General propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 422
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9.2 Band-gap engineering by alloyingSpringholz, G. / Bauer, G. et al. | 2013
- 425
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9.2.1 Pseudo-binary IV-VI alloysSpringholz, G. / Bauer, G. et al. | 2013
- 427
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9.2.2 Higher-band-gap alloysSpringholz, G. / Bauer, G. et al. | 2013
- 430
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9.3.1 Molecular beam epitaxySpringholz, G. / Bauer, G. et al. | 2013
- 435
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9.3.2 Other epitaxial growth techniquesSpringholz, G. / Bauer, G. et al. | 2013
- 437
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9.3.3 Substrate materialsSpringholz, G. / Bauer, G. et al. | 2013
- 439
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9.3.4 Growth on BaF2 (111)Springholz, G. / Bauer, G. et al. | 2013
- 443
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9.3.5 Growth on IV-VI substratesSpringholz, G. / Bauer, G. et al. | 2013
- 446
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9.3.6 Growth on KCl and NaClSpringholz, G. / Bauer, G. et al. | 2013
- 448
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9.3.7 Growth on siliconSpringholz, G. / Bauer, G. et al. | 2013
- 451
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9.3.8 Growth on GaAs and CdTeSpringholz, G. / Bauer, G. et al. | 2013
- 454
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9.3.9 DopingSpringholz, G. / Bauer, G. et al. | 2013
- 456
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9.4.1 Growth and material systemsSpringholz, G. / Bauer, G. et al. | 2013
- 462
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9.4.2 Structural propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 466
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9.4.3 Theoretical description of confined statesSpringholz, G. / Bauer, G. et al. | 2013
- 473
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9.4.4 Spectroscopic investigations of IV-VI quantum-well systemsSpringholz, G. / Bauer, G. et al. | 2013
- 480
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9.4.5 Specific results for different material systemsSpringholz, G. / Bauer, G. et al. | 2013
- 493
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9.4.6 Transport in 2D structuresSpringholz, G. / Bauer, G. et al. | 2013
- 496
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9.5.1 Fabrication: lithography and nanowire growthSpringholz, G. / Bauer, G. et al. | 2013
- 498
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9.5.2 Transport in 1D structuresSpringholz, G. / Bauer, G. et al. | 2013
- 501
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9.6 Self-assembled Stranski-Krastanow quantum dotsSpringholz, G. / Bauer, G. et al. | 2013
- 503
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9.6.1 Growth of self-assembled lead-salt quantum dotsSpringholz, G. / Bauer, G. et al. | 2013
- 507
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9.6.2 Ordering and stacking in quantum-dot superlatticesSpringholz, G. / Bauer, G. et al. | 2013
- 514
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9.6.3 Ordering mechanismsSpringholz, G. / Bauer, G. et al. | 2013
- 521
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9.6.4 Optical and electronic propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 524
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9.7 Quantum dots by phase separation and nanoprecipitationSpringholz, G. / Bauer, G. et al. | 2013
- 527
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9.7.1 Structural propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 529
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9.7.2 Size controlSpringholz, G. / Bauer, G. et al. | 2013
- 531
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9.7.3 Emission propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 535
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9.7.4 ElectroluminescenceSpringholz, G. / Bauer, G. et al. | 2013
- 538
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9.8 Optoelectronic device applicationsSpringholz, G. / Bauer, G. et al. | 2013
- 541
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9.8.1 Mid-infrared diode lasersSpringholz, G. / Bauer, G. et al. | 2013
- 547
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9.8.2 Vertical-cavity surface-emitting lasersSpringholz, G. / Bauer, G. et al. | 2013
- 553
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9.8.3 Vertical-external-cavity surface-emitting lasersSpringholz, G. / Bauer, G. et al. | 2013
- 556
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9.8.4 Microdisk lasersSpringholz, G. / Bauer, G. et al. | 2013
- 558
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9.9 Thermoelectric devicesSpringholz, G. / Bauer, G. et al. | 2013
- 562
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10 Conclusion and OutlookKlingshirn, C. et al. | 2013