Aluminum nitride (AlN) phonon dispersion curves, density of state (Englisch)
- Neue Suche nach: Madelung, O.
- Neue Suche nach: Rössler, U.
- Neue Suche nach: Schulz, M.
- Aufsatz/Kapitel (Buch) / Elektronische Ressource
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Titel:Aluminum nitride (AlN) phonon dispersion curves, density of state
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Beteiligte:
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Erschienen in:Landolt-Börnstein - Group III Condensed Matter ; 41A1a ; 1-12
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Verlag:
- Neue Suche nach: Springer Berlin Heidelberg
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Erscheinungsort:Berlin, Heidelberg
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Erscheinungsdatum:01.01.2001
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Format / Umfang:12 pages
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz/Kapitel (Buch)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis E-Book
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Gallium arsenide (GaAs) Grüneisen parameters, phonon line shift and width| 2001
- 1
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Gallium arsenide (GaAs) dielectric constants| 2001
- 1
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Boron nitride (BN) heat capacity, shock wave velocities| 2001
- 1
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Indium phosphide (InP) phonon frequencies and wavenumbers| 2001
- 1
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Indium phosphide (InP) bulk modulus| 2001
- 1
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Indium arsenide (InAs) elastic moduli and compliances| 2001
- 1
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Indium arsenide (InAs) piezoelectric parameters, nonlinear susceptibilities| 2001
- 1
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Diamond (C) isotope dependence of lattice frequencies| 2001
- 1
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Diamond (C) Raman frequencies, temperature dependence and frequency shift| 2001
- 1
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Diamond (C) phonon eigenvectors, mean square displacement, isotope effect of sound velocities| 2001
- 1
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Diamond (C) high-frequency dielectric constant| 2001
- 1
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Silicon (Si) phase diagram, equation of state| 2001
- 1
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Silicon (Si) structure| 2001
- 1
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Silicon (Si) phonon dispersion relations| 2001
- 1
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Silicon (Si) anharmonicity parameter of the LTO mode (Si-I, diamond structure)| 2001
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Silicon (Si) pressure dependence of elastic moduli of Si-I| 2001
- 1
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Germanium (Ge) lattice parameters| 2001
- 1
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Germanium (Ge) phase transition pressure and volume change| 2001
- 1
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Germanium (Ge) thermal expansion| 2001
- 1
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Germanium (Ge) phonon dispersion relations, density of states| 2001
- 1
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Germanium (Ge) mean square displacements| 2001
- 1
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Germanium (Ge) third-order susceptibility| 2001
- 1
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Grey tin (alpha-Sn) phonon dispersion curves, density of states| 2001
- 1
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Silicon carbide (SiC) piezoelectric and related constants| 2001
- 1
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Silicon carbide (SiC) non-linear low frequency susceptibility, third-order susceptibility| 2001
- 1
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Aluminum nitride (AlN) phonon spectra, phonon wavenumbers| 2001
- 1
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Boron nitride (BN) structure| 2001
- 1
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Aluminum nitride (AlN) bulk modulus, Young’s and shear modulus| 2001
- 1
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Aluminum phosphide (AlP) piezoelectric parameters, second- and third-order susceptibilities| 2001
- 1
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Aluminum arsenide (AlAs) dielectric constants| 2001
- 1
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Boron nitride (BN) lattice parameters| 2001
- 1
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Boron nitride (BN) linear thermal expansion, temperature dependence of lattice parameters| 2001
- 1
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Gallium nitride (GaN) piezoelectric constants| 2001
- 1
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Boron nitride (BN) phonon dispersion curves and density of states| 2001
- 1
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Gallium phosphide (GaP) phase transition parameters| 2001
- 1
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Gallium phosphide (GaP) bulk modulus, Young’s and torsional modulus| 2001
- 1
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Gallium arsenide (GaAs) phonon wavenumbers and frequencies| 2001
- 1
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Gallium arsenide (GaAs) second- and third-order elastic moduli and compliances| 2001
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Gallium antimonide (GaSb) lattice parameters, thermal expansion| 2001
- 1
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Indium nitride (InN) elastic moduli| 2001
- 1
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Indium antimonide (InSb) bulk modulus| 2001
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Diamond (C) linear thermal expansion coefficient| 2001
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Diamond (C) phonon wavenumbers and frequencies (diamond structure)| 2001
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Silicon (Si) Raman frequencies, dependence on various parameters| 2001
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Silicon (Si) phonon line widths and related parameters| 2001
- 1
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Silicon (Si) sound velocities| 2001
- 1
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Silicon (Si) fourth-order elastic constants of Si-I| 2001
- 1
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Silicon (Si) elasto-optic (photoelastic) coefficients| 2001
- 1
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Germanium (Ge) phonon wavenumbers and frequencies| 2001
- 1
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Silicon carbide (SiC) phonon spectra, coupled phonon-plasmon modes| 2001
- 1
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Silicon carbide (SiC) elastic moduli| 2001
- 1
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Silicon carbide (SiC) effective charges| 2001
- 1
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Aluminum antimonide (AlSb) Grüneisen parameters, phonon line width, phonon eigenvectors, mean square displacements| 2001
- 1
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Gallium nitride (GaN) phonon dispersion, density of states, Raman and infrared spectra| 2001
- 1
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Gallium nitride (GaN) second and third order susceptibilities| 2001
- 1
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Gallium arsenide (GaAs) piezoelectric and elastooptic parameters, second- and third-order susceptibilities| 2001
- 1
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Gallium antimonide (GaSb) phase diagram, equation of state, phase transitions| 2001
- 1
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Gallium antimonide (GaSb) piezoelectric parameters, second- and third-order susceptibilities| 2001
- 1
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Indium phosphide (InP) structure, phase transition parameters| 2001
- 1
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Indium phosphide (InP) phonon dispersion and density of states, phonon-plasmon modes| 2001
- 1
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Indium phosphide (InP) piezoelectric parameters, second- and third-order susceptibilities| 2001
- 1
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Indium arsenide (InAs) bulk modulus| 2001
- 1
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Indium antimonide (InSb) dielectric constants| 2001
- 1
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Diamond (C) phonon dispersion relations, phonon density of states| 2001
- 1
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Diamond (C) electric field, pressure and strain dependences of phonon frequencies| 2001
- 1
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Diamond (C) Grüneisen parameters| 2001
- 1
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Silicon (Si) lattice parameters| 2001
- 1
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Silicon (Si) mean square displacements| 2001
- 1
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Silicon (Si) internal strain| 2001
- 1
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Silicon (Si) third-order susceptibility| 2001
- 1
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Germanium (Ge) structure| 2001
- 1
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Germanium (Ge) phonon shift and width| 2001
- 1
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Germanium (Ge) photoelasticity| 2001
- 1
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Grey tin (alpha-Sn) lattice parameters| 2001
- 1
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Silicon carbide (SiC) thermal conductivity| 2001
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Boron arsenide (BAs) internal strain, effective charge, dielectric constant, third-order susceptibility| 2001
- 1
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Aluminum nitride (AlN) thermal expansion| 2001
- 1
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Aluminum nitride (AlN) dielectric constants| 2001
- 1
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Aluminum phosphide (AlP) dielectric constants| 2001
- 1
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Aluminum arsenide (AlAs) bulk modulus| 2001
- 1
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Gallium nitride (GaN) phonon width and shift, phonon eigenvectors| 2001
- 1
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Gallium phosphide (GaP) internal strain, effective charges| 2001
- 1
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Gallium arsenide (GaAs) phonon dispersion, phonon spectra| 2001
- 1
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Gallium arsenide (GaAs) phonon lifetime, phonon eigenvectors, mean square displacements| 2001
- 1
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Gallium antimonide (GaSb) structure| 2001
- 1
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Gallium antimonide (GaSb) dielectric constants| 2001
- 1
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Indium nitride (InN) piezoelectric parameters, third-order susceptibility| 2001
- 1
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Indium phosphide (InP) shear moduli, internal strain, effective charges| 2001
- 1
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Indium arsenide (InAs) sound velocities and attenuation| 2001
- 1
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Indium antimonide (InSb) phase transitions| 2001
- 1
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Indium antimonide (InSb) Grüneisen parameters, phonon line width and shift, eigenvectors, mean square displacements| 2001
- 1
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Boron antimonide (BSb) lattice properties| 2001
- 1
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Diamond (C) third-order phonoelastic constants| 2001
- 1
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Silicon (Si) sound attenuation, phonon viscosity tensor| 2001
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Boron phosphide (BP) phonon dispersion, wavenumbers and frequencies| 2001
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Boron phosphide (BP) elastic moduli| 2001
- 1
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Silicon carbide (SiC) Raman phonon wavenumbers| 2001
- 1
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Boron arsenide (BAs) phonon dispersion, phonon wavenumbers| 2001
- 1
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Boron arsenide (BAs) structure, phase transitions| 2001
- 1
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Aluminum nitride (AlN) structure| 2001
- 1
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Aluminum arsenide (AlAs) lattice parameters, thermal expansion| 2001
- 1
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Aluminum arsenide (AlAs) sound velocities, elastic moduli| 2001
- 1
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Gallium antimonide (GaSb) elastic moduli| 2001
- 1
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Gallium antimonide (GaSb) bulk modulus, Young’s and shear modulus| 2001
- 1
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Indium arsenide (InAs) phonon dispersion, phonon spectra, phonon wavenumbers| 2001
- 1
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Indium antimonide (InSb) Grüneisen parameters, internal strain, effective charges| 2001
- 1
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Diamond (C) bulk modulus| 2001
- 1
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Silicon (Si) critical point wavenumbers and phonon frequencies| 2001
- 1
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Silicon (Si) third-order elastic constants of Si-I| 2001
- 1
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Germanium (Ge) elastic moduli| 2001
- 1
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Boron phosphide (BP) bulk modulus| 2001
- 1
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Boron phosphide (BP) internal strain, effectice charges| 2001
- 1
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Silicon carbide (SiC) sound velocity| 2001
- 1
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Aluminum phosphide (AlP) structure, phase transitions| 2001
- 1
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Aluminum phosphide (AlP) phonon dispersion, phonon frequencies, Grüneisen parameters| 2001
- 1
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Aluminum antimonide (AlSb) structure, phase transitions| 2001
- 1
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Aluminum arsenide (AlAs) piezoelectric parameters, second- and third-order susceptibilities| 2001
- 1
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Gallium nitride (GaN) Grüneisen parameters| 2001
- 1
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Gallium nitride (GaN) mean square displacements, sound velocities| 2001
- 1
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Silicon carbide (SiC) lattice parameters| 2001
- 1
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Silicon carbide (SiC) bulk modulus, Youngs modulus, shear modulus| 2001
- 1
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Silicon carbide (SiC) low-frequency dielectric constant| 2001
- 1
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Boron phosphide (BP) piezoelectric constant, third-order susceptibility| 2001
- 1
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Boron arsenide (BAs) elastic moduli, bulk modulus| 2001
- 1
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Aluminum arsenide (AlAs) phase transition parameters| 2001
- 1
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Aluminum arsenide (AlAs) phonon dispersion, phonon wavenumbers and frequencies| 2001
- 1
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Gallium antimonide (GaSb) Grüneisen parameters, phonon line width and eigenvectors, mean square displacements| 2001
- 1
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Indium nitride (InN) lattice parameters, thermal expansion| 2001
- 1
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Boron nitride (BN) bulk modulus| 2001
- 1
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Indium arsenide (InAs) lattice parameters, thermal expansion| 2001
- 1
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Diamond (C) third-order elastic constants| 2001
- 1
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Diamond (C) non-linear optical coefficients| 2001
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Diamond (C) fourth-order elastic constants| 2001
- 1
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Silicon (Si) elastic moduli of other Si modifications| 2001
- 1
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Germanium (Ge) phase diagram, equation of state| 2001
- 1
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Germanium (Ge) high-frequency dielectric constant| 2001
- 1
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Gallium arsenide (GaAs) phase transition parameters| 2001
- 1
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Indium nitride (InN) phonon dispersion, phonon wavenumbers and frequencies| 2001
- 1
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Boron nitride (BN) elastic moduli| 2001
- 1
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Indium arsenide (InAs) structure, phase transition parameters| 2001
- 1
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Indium arsenide (InAs) dielectric constants| 2001
- 1
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Boron nitride (BN) effective charges| 2001
- 1
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Indium antimonide (InSb) elastic moduli and compliances| 2001
- 1
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Diamond (C) phase transition pressure, volume change| 2001
- 1
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Diamond (C) two-phonon density of states and second-order Raman and infrared spectra| 2001
- 1
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Diamond (C) fourth-order phonoelastic constants| 2001
- 1
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Boron phosphide (BP) linear thermal expansion coefficient| 2001
- 1
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Boron phosphide (BP) Grüneisen parameters, phonon eigenvectors, mean square displacements| 2001
- 1
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Germanium (Ge) internal strain| 2001
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Grey tin (alpha-Sn) Debye-Waller factor| 2001
- 1
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Silicon carbide (SiC) phase transition pressure and volume change| 2001
- 1
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List of frequently used symbols and abbreviations, conversion factors| 2001
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Boron arsenide (BAs) lattice parameters, thermal expansion| 2001
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Aluminum nitride (AlN) second- and third-order susceptibilities| 2001
- 1
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Aluminum arsenide (AlAs) Grüneisen parameters, phonon width and shift, eigenvectors, mean square displacements| 2001
- 1
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Aluminum antimonide (AlSb) piezoelectric constants, second- and third-order susceptibilities| 2001
- 1
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Aluminum antimonide (AlSb) dielectric constants| 2001
- 1
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Gallium phosphide (GaP) phonon self energy, phonon line shift and width| 2001
- 1
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Gallium phosphide (GaP) Grüneisen parameters, phonon eigenvectors, mean square displacements| 2001
- 1
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Indium nitride (InN) internal strain, effective charges, spontaneous polarization| 2001
- 1
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Indium phosphide (InP) Grüneisen constants, phonon eigenvector, mean square displacements| 2001
- 1
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Indium phosphide (InP) sound velocities, elastic moduli| 2001
- 1
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Indium antimonide (InSb) electromech. coupling coeff., piezoelectric parameters, second- and third-order susceptibility| 2001
- 1
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Diamond (C) critical-point frequencies| 2001
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Diamond (C) zone-center Raman phonon linewidth| 2001
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Diamond (C) pressure, strain and isotope dependence of phonon width| 2001
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General Introduction| 2001
- 1
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Silicon (Si) phonon wavenumbers and frequencies| 2001
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Germanium (Ge) mode Grüneisen parameters| 2001
- 1
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Grey tin (alpha-Sn) structure, phase diagram, equation of state| 2001
- 1
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Grey tin (alpha-Sn) internal-strain parameter| 2001
- 1
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Grey tin (alpha-Sn) bulk and shear moduli| 2001
- 1
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Silicon carbide (SiC) thermal expansion| 2001
- 1
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Aluminum nitride (AlN) piezoelectric constants, electromechanical coupling factor| 2001
- 1
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Aluminum phosphide (AlP) elastic moduli| 2001
- 1
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Gallium nitride (GaN) structure| 2001
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Gallium nitride (GaN) phonon wavenumbers and frequencies| 2001
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Gallium nitride (GaN) internal strain, effective charges, spontaneous polarization| 2001
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Gallium nitride (GaN) bulk modulus| 2001
- 1
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Gallium phosphide (GaP) piezoelectric and electrooptic parameters, second- and third-order susceptibility| 2001
- 1
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Gallium arsenide (GaAs) lattice parameters, thermal expansion| 2001
- 1
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Boron nitride (BN) Grüneisen parameters, phonon line width, mean square displacements| 2001
- 1
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Gallium arsenide (GaAs) internal strain, effective charges| 2001
- 1
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Gallium antimonide (GaSb) sound velocity, ultrasonic attenuation| 2001
- 1
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Gallium antimonide (GaSb) internal strain, effective charges| 2001
- 1
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Indium nitride (InN) Grüneisen parameters, phonon line width| 2001
- 1
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Indium antimonide (InSb) sound velocity, sound attenuation, phonon viscosity| 2001
- 1
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Diamond (C) structure| 2001
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Diamond (C) phonon wave numbers and frequencies (BC8 and simple hexagonal structures)| 2001
- 1
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Boron phosphide (BP) structure, equation of state, specific heat, phase transitions| 2001
- 1
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Silicon (Si) thermal expansion| 2001
- 1
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Germanium (Ge) bulk modulus| 2001
- 1
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Grey tin (alpha-Sn) elastic moduli| 2001
- 1
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Silicon carbide (SiC) phonon wavenumbers and frequencies| 2001
- 1
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Silicon carbide (SiC) mean square displacements| 2001
- 1
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Silicon carbide (SiC) high-frequency dielectric constant| 2001
- 1
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Boron phosphide (BP) dielectric constants| 2001
- 1
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Aluminum nitride (AlN) phase diagram, equation of state, phase transition parameters| 2001
- 1
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Aluminum nitride (AlN) lattice parameters| 2001
- 1
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Aluminum nitride (AlN) phonon dispersion curves, density of state| 2001
- 1
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Aluminum nitride (AlN) sound velocities, elastic moduli| 2001
- 1
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Aluminum phosphide (AlP) bulk modulus| 2001
- 1
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Aluminum phosphide (AlP) internal strain, effective charges| 2001
- 1
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Boron nitride (BN) phase transition data| 2001
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Aluminum antimonide (AlSb) phonon dispersion, phonon wavenumbers| 2001
- 1
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Aluminum antimonide (AlSb) lattice parameters, thermal expansion| 2001
- 1
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Gallium nitride (GaN) phase diagram, equation of states, phase transitions| 2001
- 1
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Gallium phosphide (GaP) sound velocities, second- and third-order elastic moduli| 2001
- 1
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Gallium arsenide (GaAs) structure, phase diagram, equation of state| 2001
- 1
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Gallium arsenide (GaAs) bulk modulus, Young’s and torsional moduli| 2001
- 1
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Indium nitride (InN) structure, phase transitions| 2001
- 1
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Indium arsenide (InAs) internal strain, effective charges| 2001
- 1
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Indium antimonide (InSb) lattice parameters, thermal expansion| 2001
- 1
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Indium antimonide (InSb) structure| 2001
- 1
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Diamond (C) phase diagram, equation of state| 2001
- 1
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Diamond (C) lattice parameters| 2001
- 1
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Boron nitride (BN) piezoelectric parameters, third order susceptibility| 2001
- 1
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Diamond (C) elastic moduli| 2001
- 1
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Germanium (Ge) sound velocities, ultrasound attenuation| 2001
- 1
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Germanium (Ge) third-order elastic moduli| 2001
- 1
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Grey tin (alpha-Sn) phase transition pressure and volume change| 2001
- 1
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Grey tin (alpha-Sn) thermal expansion| 2001
- 1
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Aluminum antimonide (AlSb) sound velocities, elastic moduli| 2001
- 1
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Gallium nitride (GaN) elastic moduli| 2001
- 1
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Gallium nitride (GaN) dielectric constants| 2001
- 1
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Gallium phosphide (GaP) structure, equation of state, specific heat| 2001
- 1
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Gallium phosphide (GaP) dielectric constants| 2001
- 1
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Gallium arsenide (GaAs) sound velocities, ultrasonic attenuation, phonon viscosity| 2001
- 1
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Indium nitride (InN) bulk modulus| 2001
- 1
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Indium nitride (InN) dielectric constants| 2001
- 1
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Indium phosphide (InP) lattice parameters, thermal expansion| 2001
- 1
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Indium phosphide (InP) dielectric constants| 2001
- 1
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Boron nitride (BN) Young’s modulus, internal strain| 2001
- 1
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Diamond (C) temperature dependence of phonon self energy, frequency dependence of the damping function| 2001
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Diamond (C) internal strain| 2001
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Silicon (Si) phase transition pressure and volume change| 2001
- 1
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Boron phosphide (BP) lattice parameters| 2001
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Silicon (Si) mode Grüneisen parameters| 2001
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Silicon (Si) elastic moduli of Si-I| 2001
- 1
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Silicon (Si) Young’s modulus, torsion modulus, bulk modulus (various structures)| 2001
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Grey tin (alpha-Sn) high-frequency dielectric constant| 2001
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Silicon carbide (SiC) mode Grüneisen parameters| 2001
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Aluminum nitride (AlN) specific heat, thermal conductivity| 2001
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Aluminum nitride (AlN) Grüneisen parameters, phonon line width and shift| 2001
- 1
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Aluminum nitride (AlN) phonon eigenvectors, mean square displacements| 2001
- 1
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Aluminum nitride (AlN) third-order elastic constants| 2001
- 1
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Aluminum nitride (AlN) internal strain, effective charges, spontaneous polarization| 2001
- 1
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Aluminum phosphide (AlP) lattice parameters, thermal expansion| 2001
- 1
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Gallium phosphide (GaP) lattice parameters, thermal expansion| 2001
- 1
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Gallium phosphide (GaP) phonon dispersion, density of states| 2001
- 1
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Gallium phosphide (GaP) phonon frequencies and wavenumbers| 2001
- 1
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Boron nitride (BN) phonon wavenumbers and frequencies| 2001
- 1
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Gallium antimonide (GaSb) phonon dispersion, wavenumbers and frequencies| 2001
- 1
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Indium arsenide (InAs) phonon line width and eigenvectors, Grüneisen parameters, mean square displacements| 2001
- 1
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Indium antimonide (InSb) phonon dispersion, phonon wavenumbers and frequencies| 2001
- 1
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Boron nitride (BN) dielectric constants| 2001
- 1
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Diamond (C) isotope dependence of the phonon density of states and of two-phonon spectra| 2001
- 1
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Silicon (Si) pressure dependence of phonon wavenumbers and frequencies| 2001
- 1
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Silicon (Si) high-frequency dielectric constant| 2001
- 1
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Germanium (Ge) Raman phonon frequencies and wavenumbers| 2001
- 1
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Grey tin (alpha-Sn) phonon frequencies and wavenumbers and related parameters| 2001
- 1
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Silicon carbide (SiC) structure, equation of state| 2001
- 1
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Silicon carbide (SiC) phonon dispersion relations, density of states| 2001
- 1
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Silicon carbide (SiC) internal strain| 2001
- 1
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Boron nitride (BN) phase diagram, equation of state| 2001
- 1
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Aluminum arsenide (AlAs) structure| 2001
- 1
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Aluminum arsenide (AlAs) internal strain, effective charges| 2001
- 1
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Aluminum antimonide (AlSb) bulk modulus| 2001
- 1
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Aluminum antimonide (AlSb) internal strain, effective charges| 2001
- 1
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Gallium nitride (GaN) lattice parameters, thermal expansion| 2001