Defect Production During Neutron Doping of Si (Englisch)
- Neue Suche nach: Meese, J. M.
- Neue Suche nach: Chandrasekhar, M.
- Neue Suche nach: Cowan, D. L.
- Neue Suche nach: Chang, S. L.
- Neue Suche nach: Yousif, H.
- Neue Suche nach: Chandrasekhar, H. R.
- Neue Suche nach: McGrail, P.
- Neue Suche nach: Meese, J. M.
- Neue Suche nach: Chandrasekhar, M.
- Neue Suche nach: Cowan, D. L.
- Neue Suche nach: Chang, S. L.
- Neue Suche nach: Yousif, H.
- Neue Suche nach: Chandrasekhar, H. R.
- Neue Suche nach: McGrail, P.
In:
Neutron-Transmutation-Doped Silicon
;
101-140
;
1981
- Aufsatz/Kapitel (Buch) / Elektronische Ressource
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Titel:Defect Production During Neutron Doping of Si
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Beteiligte:Meese, J. M. ( Autor:in ) / Chandrasekhar, M. ( Autor:in ) / Cowan, D. L. ( Autor:in ) / Chang, S. L. ( Autor:in ) / Yousif, H. ( Autor:in ) / Chandrasekhar, H. R. ( Autor:in ) / McGrail, P. ( Autor:in )
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Erschienen in:Neutron-Transmutation-Doped Silicon ; 101-140
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Verlag:
- Neue Suche nach: Springer US
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Erscheinungsort:Boston, MA
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Erscheinungsdatum:01.01.1981
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Format / Umfang:40 pages
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ISBN:
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DOI:
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Medientyp:Aufsatz/Kapitel (Buch)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis E-Book
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Neutron-Doped Silicon — A Market ReviewHerzer, Heinz et al. | 1981
- 19
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Large Scale Production of NTD Silicon in the United StatesStone, Bobbie D. et al. | 1981
- 3
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Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device PerformanceCorelli, John C. / Corbett, James W. et al. | 1981
- 55
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Electrical Property Studies of Oxygen in Czochralski-Grown Neutron-Transmutation-Doped SiliconCleland, J. W. / Fukuoka, N. et al. | 1981
- 83
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Impurity Interactions with Structural Defects in Irradiated SiliconNewman, R. C. et al. | 1981
- 101
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Defect Production During Neutron Doping of SiMeese, J. M. / Chandrasekhar, M. / Cowan, D. L. / Chang, S. L. / Yousif, H. / Chandrasekhar, H. R. / McGrail, P. et al. | 1981
- 141
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Wafer Stability. A Comparison of NTD-Silicon with Conventional FZMalmros, O. / Guldberg, J. / Lund, K. et al. | 1981
- 8
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Electron Spin Resonance (ESR) Study on the Thermal Annealing of Defects Induced in Neutron Transmutation Doped SiliconHo, V. Q. / Sugano, T. et al. | 1981
- 161
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Optical Studies of Lattice Damage in Neutron-Transmutation-Doped SiliconFukuoka, Noboru / Cleland, John W. et al. | 1981
- 165
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A Facility and Program at IPNS to Study Defects Produced by Fast Neutrons in SemiconductorsKirk, M. A. / Birtcher, R. C. / Scott, T. L. / Blewitt, T. H. et al. | 1981
- 11
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Defects in Neutron-Irradiated Extrinsic P-Type SiliconYoung, M. H. / Stafsudd, O. M. / Brower, K. L. / Marsh, O. J. / Baron, R. et al. | 1981
- 183
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The Health and Safety Aspects of Neutron Doped SiliconSmith, T. G. G. et al. | 1981
- 193
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Precision and Accuracy of NTD Silicon Production Based on Calorimetric Neutron Dose ControlHeydorn, K. / Andresen, Kirsten et al. | 1981
- 207
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The Selection of Starting Material for Neutron-Transmutation Doped SiliconKramer, Horst G. et al. | 1981
- 211
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The Optimisation of Nuclear Parameters Used for Silicon Irradiation in the Harwell Research ReactorsCrick, N. W. et al. | 1981
- 223
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Factors Affecting Phosphorus Production Rate in NTD SiliconMeese, J. M. / Gunn, S. L. et al. | 1981
- 247
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Neutron Doped Silicon in Grenoble Reactor FacilitiesSciers, P. / Veyrat, J. F. et al. | 1981
- 263
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Characterization of NTD Silicon Irradiated in Grenoble Reactor FacilitiesRoche, D. / Blanc, F. / Vilain, M. et al. | 1981
- 273
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A Preliminary Study on NTD-SiliconCuengang, Lu / Yaoxin, Li et al. | 1981
- 287
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Development of the Irradiation Facilities for Silicon Neutron Doping in FranceBréant, Paul / Cherruau, François / Genthon, Jean-Pierre et al. | 1981
- 305
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Neutron Transmutation Doping of Silicon SlicesStone, Bobbie D. / Henry, Aliene D. / Gunn, Steve L. et al. | 1981
- 319
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Characterization of Unijunction Transistors Fabricated on NTD-SiliconWashburn, James R. et al. | 1981
- 339
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NTD Silicon Behaviour during Diffusion Heat Treatment and High Power Devices OptimisationSenes, A. et al. | 1981
- 24
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An Optimization of Blocking Characteristics of High Voltage Thyristors Using NTD CrystalWatanabe, A. / Naito, M. / Yatsuo, T. / Okamura, M. / Morita, K. et al. | 1981
- 367
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The Fabrication and Characterization of Spreading Resistance Temperature Sensors Using NTD SiliconDerrington, Carl et al. | 1981
- 377
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Characterization of NTD Silicon Crystals by the Photoluminescence TechniqueTajima, Michio / Yusa, Atsushi et al. | 1981
- 395
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Precision Resistivity Measurements on NTD-SiliconMalmros, O. et al. | 1981
- 417
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Photoluminescence Analysis of NTD-SiliconHammond, R. B / Meese, J. M. et al. | 1981
- 423
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Quantitative Determination of B and P in Silicon by IR SpectroscopyPajot, Bernard / Débarre, Dominique et al. | 1981
- 437
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Extrinsic NTD Silicon for Infrared ApplicationsBraggins, T. T. / Thomas, R. N. et al. | 1981
- 447
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Impurity Doping and Isolation Processing by High Energy Electron BeamWada, Takao et al. | 1981
- 473
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Application of NTD Silicon for Radiation Detector of Surface Barrier TypeYusa, A. / Itoh, D. / Kim, C. / Kim, H. / Husimi, K. / Ohkawa, S. et al. | 1981
- 487
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Neutron Transmutation Doping of GaAsVesaghi, M. A. / Fritzsche, H. et al. | 1981