Quantitative x-ray topographic analysis of the defects of 6H-SiC single crystals and homoepitaxial silicon carbide (Englisch)
- Neue Suche nach: Kuznetsov, G. F.
- Neue Suche nach: Kuznetsov, G. F.
In:
Technical Physics
;
44
, 7
;
797-800
;
1999
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Quantitative x-ray topographic analysis of the defects of 6H-SiC single crystals and homoepitaxial silicon carbide
-
Beteiligte:Kuznetsov, G. F. ( Autor:in )
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Erschienen in:Technical Physics ; 44, 7 ; 797-800
-
Verlag:
- Neue Suche nach: Nauka/Interperiodica
-
Erscheinungsort:Moscow
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Erscheinungsdatum:01.07.1999
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Format / Umfang:4 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 44, Ausgabe 7
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