A new analytical approach to threshold voltage modeling of triple material gate-all-around heterojunction tunnel field effect transistor (Englisch)
- Neue Suche nach: Usha, C.
- Weitere Informationen zu Usha, C.:
- https://orcid.org/http://orcid.org/0000-0003-2035-7878
- Neue Suche nach: Vimala, P.
- Neue Suche nach: Usha, C.
- Weitere Informationen zu Usha, C.:
- https://orcid.org/http://orcid.org/0000-0003-2035-7878
- Neue Suche nach: Vimala, P.
In:
Indian Journal of Physics
;
95
, 7
;
1365-1371
;
2021
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:A new analytical approach to threshold voltage modeling of triple material gate-all-around heterojunction tunnel field effect transistor
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Weitere Titelangaben:Indian J Phys
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Beteiligte:Usha, C. ( Autor:in ) / Vimala, P. ( Autor:in )
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Erschienen in:Indian Journal of Physics ; 95, 7 ; 1365-1371
-
Verlag:
- Neue Suche nach: Springer India
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Erscheinungsort:New Delhi
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Erscheinungsdatum:01.07.2021
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Format / Umfang:7 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 95, Ausgabe 7
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