Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering (Englisch)
Nationallizenz
- Neue Suche nach: Tabuchi, M.
- Neue Suche nach: Yamada, N.
- Neue Suche nach: Fujibayashi, K.
- Neue Suche nach: Takeda, Y.
- Neue Suche nach: Kamei, H.
- Neue Suche nach: Tabuchi, M.
- Neue Suche nach: Yamada, N.
- Neue Suche nach: Fujibayashi, K.
- Neue Suche nach: Takeda, Y.
- Neue Suche nach: Kamei, H.
In:
Journal of Electronic Materials
;
25
, 5
;
671-675
;
1996
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering
-
Beteiligte:Tabuchi, M. ( Autor:in ) / Yamada, N. ( Autor:in ) / Fujibayashi, K. ( Autor:in ) / Takeda, Y. ( Autor:in ) / Kamei, H. ( Autor:in )
-
Erschienen in:Journal of Electronic Materials ; 25, 5 ; 671-675
-
Verlag:
- Neue Suche nach: Springer-Verlag
-
Erscheinungsort:New York
-
Erscheinungsdatum:01.05.1996
-
Format / Umfang:5 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 25, Ausgabe 5
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 553
-
ForewordLorenzo, Joe / Asahi, Hajime / Wada, Osamu / Hasegawa, Hideki et al. | 1996
- 555
-
High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulationNakayama, T. / Miyamoto, H. / Oishi, E. / Samoto, N. et al. | 1996
- 559
-
Reliability of AllnAs/lnGaAs/lnP HEMT with WSi ohmic contactsSasaki, H. / Yajima, DG K. / Yoshida, N. / Ishida, T. / Hattori, R. / Sonoda, T. / Ishihara, O. / Takamiya, S. / Konishi, R. / Ando, K. et al. | 1996
- 565
-
Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusionItaya, Kazuhiko / Mondry, Mark J. / Floyd, Philip D. / Coldren, Larry A. / Merz, James L. et al. | 1996
- 571
-
Chemical beam etching of InP in GSMBEGentner, J. L. / Jarry, P. H. / Goldstein, L. et al. | 1996
- 577
-
Morphological and electrical characterization of AI/Ni/n-lnP contacts with tapered insertion Ni-LayerMiyazaki, S. / Lin, T. C. / Nishida, C. / Kaibe, H. T. / Okumura, T. et al. | 1996
- 581
-
A1.3 μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrateUchida, T. / Kurakake, H. / Soda, H. / Yamazaki, S. et al. | 1996
- 585
-
Controlled beam dry etching of InP by using Br2-N2 GasOku, Satoshi / Shibata, Yasuo / Ochiai, Kenichi et al. | 1996
- 593
-
(NH4)2Sx-treated InP(100) surfaces studied by soft x-ray photoelectron spectroscopyMaeyama, S. / Sugiyama, M. / Heun, S. / Oshima, M. et al. | 1996
- 597
-
Formation of PNx/lnP structure byIn Situ remote plasma processesSakamoto, Yoshifumi / Sugino, Takashi / Miyazaki, Takashi / Shirafuji, Junji et al. | 1996
- 603
-
Cadmium sulfide surface stabilization for InP-based optoelectronic devicesVaccaro, K. / Davis, A. / Dauplaise, H. M. / Spaziani, S. M. / Martin, E. A. / Lorenzo, J. P. et al. | 1996
- 611
-
Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBPNakata, Hiroyasu / Satoh, Kazuo / Ohyama, Tyuzi / Fujiwara, Yasufumi / Nonogaki, Youichi / Takeda, Yoshikazu et al. | 1996
- 619
-
Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facetsFujikura, H. / Hasegawa, H. et al. | 1996
- 627
-
Material and electrical characteristics of iron doped Pt-lnAIAs schottky diodes grown by LP-MOCVDHong, Kyushik / Pavlidis, Dimitris / Séjalon, Frédéric et al. | 1996
- 633
-
Thermal stability of Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure and its improvement by phosphidizationTakahashi, N. / Shiota, M. / Zhu, Y. / Shimizu, M. / Hirata, D. / Sakamoto, Y. / Sugino, T. / Shirafujf, J. et al. | 1996
- 637
-
Low temperature grown be-doped InAIP band offset reduction layer to p-type ZnSeIwata, K. / Asahi, H. / Ogura, T. / Sumino, J. / Gonda, S. / Ohki, A. / Kawaguchi, Y. / Matsuoka, T. et al. | 1996
- 643
-
New low contact resistance triple capping layer enabling very high Gm InAIAs/lnGaAs HEMTsHiguchi, K. / Mori, M. / Kudo, M. / Mishima, T. et al. | 1996
- 649
-
A novel insulated gate technology for ingaas high electron mobility transistors using silicon interlayer based passivation techniqueSuzuki, S. / Kodama, S. / Tomozawa, H. / Hasegawa, H. et al. | 1996
- 657
-
Fabrication of 60 nm pitch ordered InP pillars by EB-lithography and anodizationTakizawa, Toshiyuki / Nakahara, Masafumi / Kikuno, Eijiro / Arai, Shigehisa et al. | 1996
- 661
-
Photocurrent anisotropy in compositional modulated superlattice of long-range ordered Ga0.5In0.5PKita, Takashi / Fujiwara, Akira / Nakayama, Hiroshi / Nishino, Taneo et al. | 1996
- 667
-
Identification of topmost atom on InP (001) surface by coaxial impact collision ion scattering spectroscopyNishihara, T. / Shinohara, M. / Ishiyama, O. / Ohtani, F. / Yoshimoto, M. / Maeda, T. / Koinuma, H. et al. | 1996
- 671
-
Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scatteringTabuchi, M. / Yamada, N. / Fujibayashi, K. / Takeda, Y. / Kamei, H. et al. | 1996
- 677
-
Photoconductivity and photoluminescence studies in copper diffused InPPal, D. / Bose, D. N. et al. | 1996
- 685
-
Donor passivation in n-AllnAs layers by fluorineYamamoto, Y. / Hayafuji, N. / Fujii, N. / Kadoiwa, K / Yoshida, N. / Sonoda, T. / Takamiya, S. et al. | 1996
- 691
-
Chemical-bonding structure of InP surface in MOVPE studied by surface photo-absorptionKobayashi, Yasuyuki / Kobayashi, Naoki et al. | 1996
- 695
-
Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAsSugiura, Touko / Hase, Nobuyasu / Hiramatsu, Kazumasa / Sawaki, Nobuhiko et al. | 1996
- 701
-
Degradation of PL characteristics in strained layer multi-quantum well structure with atomic ordering structureOtsuka, Nobuyuki / Kito, Masahiro / Yabuuchi, Yasufumi / Ishino, Masato / Matsui, Yasushi et al. | 1996
- 709
-
Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-opticsStadler, B. J. H. / Vaccaro, K. / Davis, A. / Ramseyer, G. O. / Martin, E. A. / Dauplaise, H. M. / Theodore, L. M. / Lorenzo, J. P. et al. | 1996
- 715
-
Thermal stability of interfaces between metals and InP-based materialsAshizawa, Y. / Nozaki, C. / Noda, T. / Sasaki, A. et al. | 1996
- 721
-
Microstructural analysis of the Ge/Pd(Zn) ohmic contact to p-InPPark, Moon-Ho / Wang, L. C. / Hwang, D. M. et al. | 1996
- 727
-
Atomic structures of Au and Ag films epitaxially grown on the InP(001)-p(2 × 4) surfaceMorita, K. / Soda, K. / Katoh, T. / Hanebuchi, M. et al. | 1996
- 733
-
Characterization of electron traps in plasma-treated AlInAsSugino, T. / Hirata, D. / Yamamura, I. / Matsuda, K. / Shirafuji, J. et al. | 1996
- 739
-
Interface strain in InGaAs-InP superlatticesClawson, A. R. / Hanson, C. M. et al. | 1996
- 745
-
Highly confined two-dimensional electron gas in an In0.52AI0.48As/In0.52Ga0.47As modulation-doped structure with a strained InAs quantum wellAkazaki, Tatsushi / Nitta, Junsaku / Takayanagi, Hideaki / Enoki, Takatomo / Arai, Kunihiro et al. | 1996
- 749
-
Effect of shroud flow on high quality InxGa1−xN deposition in a production scale multi-wafer-rotating-disc reactorYuan, C. / Salagaj, T. / Kroll, W. / Stall, R. A. / Schurman, M. / Hwang, C. Y. / Li, Y. / Mayo, W. E. / Lu, Y. / Krishnankutty, S. et al. | 1996
- 755
-
A unique, device-friendly contact system for shallow junction p/n indium phosphide devicesWeizer, Victor G. / Fatemi, Navid S. et al. | 1996
- 761
-
Effect of the post-As+-lmplantation thermal treatment on MBE HgCdTe optical propertiesGuo, S. P. / Chang, Y. / Zhang, J. M. / Shen, X. C. / Chu, J. H. / Yuan, S. X. et al. | 1996
- 765
-
Magnetron sputtered transparent conducting CdO thin filmsGurumurugan, K. / Mangalaraj, D. / Narayandass, S. A. K. et al. | 1996
- 771
-
Low oxygen and carbon incorporation in AIGaAs using tritertiarybutylaluminum in organometallic vapor phase epitaxyWang, C. A. / Salimand, S. / Jensen, K. F. / Jones, A. C. et al. | 1996
- 777
-
Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaNShur, M. / Gelmont, B. / Asif Khan, M. et al. | 1996
- 777
-
Electron Mobility in Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures and in Bulk GaNShur, M. / Gelmont, B. / Asif Khan, M. et al. | 1996
- 787
-
Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEEDYang, Hui / Brandt, Oliver / Ploog, Klaus et al. | 1996
- 793
-
MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substratesJohnson, M. A. L. / Fujita, Shizuo / Rowland, W. H. / Hughes, W. C. / He, Y. W. / El-Masry, N. A. / Cook, J. W. / Schetzina, J. F. / Ren, J. / Edmond, J. A. et al. | 1996
- 799
-
Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxyIshibashi, Akihiko / Takeishi, Hidemi / Mannoh, Masaya / Yabuuchi, Yasufumi / Ban, Yuzaburoh et al. | 1996
- 805
-
Cleaning of GaN surfacesSmith, L. L. / King, S. W. / Nemanich, R. J. / Davis, R. F. et al. | 1996
- 811
-
Estimated phase equilibria in the transition metal-Ga-N systems: Consequences for electrical contacts to GaNMohney, S. E. / Lin, X. et al. | 1996
- 819
-
Ohmic contacts to n-type GaN using Pd/Al metallizationPing, A. T. / Asif Khan, M. / Adesida, I. et al. | 1996
- 825
-
Dry Etching of GaN Using Chemically Assisted Ion Beam Etching with HCl and H~2/Cl~2Ping, A. T. / Schmitz, A. C. / Asif Khan, M. / Adesida, I. et al. | 1996
- 825
-
Dry etching of GaN using chemically assisted Ion beam etching with HCI and H2/Cl2Ping, A. T. / Schmitz, A. C. / Asif Khan, M. / Adesida, I. et al. | 1996
- 831
-
Schottky barriers on n-GaN grown on SiCKalinina, E. V. / Kuznetsov, N. I. / Dmitriev, V. A. / Irvine, K. G. / Carter, C. H. et al. | 1996
- 835
-
Reactive ion etching of gallium nitride filmsLee, Heon / Oberman, David B. / Harris, James S. et al. | 1996
- 839
-
Ion Implantation and Rapid Thermal Processing of III-V NitridesZolper, J. C. / Crawford, M. H. / Pearton, S. J. / Abernathy, C. R. / Vartuli, C. B. / Yuan, C. / Stall, R. A. et al. | 1996
- 839
-
Ion implantation and rapid thermal processing of Ill-V nitridesZolper, J. C. / Hagerott Crawford, M. / Pearton, S. J. / Abernathy, C. R. / Vartuli, C. B. / Yuan, C. / Stall, R. A. et al. | 1996
- 845
-
The incorporation of hydrogen into III-V nitrides during processingPearton, S. J. / Shul, R. J. / Wilson, R. G. / Ren, F. / Zavada, J. M. / Abernathy, C. R. / Vartuli, C. B. / Lee, J. W. / Mileham, J. R. / Mackenzie, J. D. et al. | 1996
- 851
-
Magnetic resonance studies of GaN based light emitting diodesCaelos, W. E. / Glaser, E. R. / Kennedy, T. A. / Nakamura, S. et al. | 1996
- 855
-
MBE growth and properties of ZnO on sapphire and SiC substratesJohnson, M. A. L. / Fujita, Shizuo / Rowland, W. H. / Hughes, W. C. / Cook, J. W. / Schetzina, J. F. et al. | 1996
- 863
-
Electronic properties of boron in p-type bulk 6H-SiCMitchel, W. C. / Roth, Matthew / Evwaraye, A. O. / Yu, P. W. / Smith, S. R. et al. | 1996
- 869
-
Effect of Annealing Temperature on 1.5 m Photoluminescence from Er-Implanted 6H-SiCSteckl, A. J. / Devrajan, J. / Choyke, W. J. / Devaty, R. P. / Yoganathan, M. / Novak, S. W. et al. | 1996
- 869
-
Effect of annealing temperature on 1.5 μm photoluminescence from Er-lmplanted 6H-SiCSteckl, A. J. / Devkajan, J. / Choyke, W. J. / Devaty, R. P. / Yoganathan, M. / Novak, S. W. et al. | 1996
- 869
-
Effect of annealing temperature on 1.5 micron photoluminescence from Er-implanted 6H-SiCSteckl, A.J. / Devrajan, J. / Choyke, W.J. / Devaty, R.P. / Yoganathan, M. / Novak, S.W. et al. | 1996
- 875
-
Reactive ion etching of trenches in 6H-SiCKothandaraman, M. / Alok, D. / Baliga, B. J. et al. | 1996
- 879
-
Aluminum and boron ion implantations into 6H-SiC epilayersKimoto, Tsunenobu / Itoh, Akira / Matsunami, Hiroyuki / Nakata, Toshitake / Watanabe, Masanori et al. | 1996
- 885
-
Elevated temperature nitrogen implants in 6H-SiCGaedner, Jason / Rao, Mulpuri V. / Holland, O. W. / Kelner, G. / Simons, David S. / Chi, Peter H. / Andrews, John M. / Kretchmer, J. / Ghezzo, M. et al. | 1996
- 893
-
High field activation of micropipes in high resistivity silicon carbideSudarshan, T. S. / Gradinaru, G. / Korony, G. / Mitchel, W. / Hopkins, R. H. et al. | 1996
- 899
-
Experimental characterization of electron-hole generation in silicon carbideWang, Y. / Cooper, J. A. / Melloch, M. R. / Sheppard, S. T. / Palmour, J. W. / Lipkin, L. A. et al. | 1996
- 909
-
Improved oxidation procedures for reduced SiO2/SiC defectsLipkin, L. A. / Palmour, J. W. et al. | 1996
- 917
-
Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor depositionFeng, Z. C. / Rohatgi, A. / Tin, C. C. / Hu, R. / Wee, A. T. S. / Se, K. P. et al. | 1996