3C-SiC p-n structures grown by sublimation on 6H-SiC substrates (Englisch)
- Neue Suche nach: Lebedev, A. A.
- Neue Suche nach: Strel’chuk, A. M.
- Neue Suche nach: Davydov, D. V.
- Neue Suche nach: Savkina, N. S.
- Neue Suche nach: Tregubova, A. S.
- Neue Suche nach: Kuznetsov, A. N.
- Neue Suche nach: Solov’ev, V. A.
- Neue Suche nach: Poletaev, N. K.
- Neue Suche nach: Lebedev, A. A.
- Neue Suche nach: Strel’chuk, A. M.
- Neue Suche nach: Davydov, D. V.
- Neue Suche nach: Savkina, N. S.
- Neue Suche nach: Tregubova, A. S.
- Neue Suche nach: Kuznetsov, A. N.
- Neue Suche nach: Solov’ev, V. A.
- Neue Suche nach: Poletaev, N. K.
In:
Semiconductors
;
37
, 4
;
482-484
;
2003
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:3C-SiC p-n structures grown by sublimation on 6H-SiC substrates
-
Beteiligte:Lebedev, A. A. ( Autor:in ) / Strel’chuk, A. M. ( Autor:in ) / Davydov, D. V. ( Autor:in ) / Savkina, N. S. ( Autor:in ) / Tregubova, A. S. ( Autor:in ) / Kuznetsov, A. N. ( Autor:in ) / Solov’ev, V. A. ( Autor:in ) / Poletaev, N. K. ( Autor:in )
-
Erschienen in:Semiconductors ; 37, 4 ; 482-484
-
Verlag:
- Neue Suche nach: Nauka/Interperiodica
-
Erscheinungsort:Moscow
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Erscheinungsdatum:01.04.2003
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Format / Umfang:3 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 37, Ausgabe 4
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