A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications (Englisch)
- Neue Suche nach: A, Angelin Delighta
- Weitere Informationen zu A, Angelin Delighta:
- https://orcid.org/http://orcid.org/0009-0002-2347-7103
- Neue Suche nach: I.V, Binola K Jebalin.
- Weitere Informationen zu I.V, Binola K Jebalin.:
- https://orcid.org/http://orcid.org/0000-0002-9101-6889
- Neue Suche nach: Ajayan, J.
- Weitere Informationen zu Ajayan, J.:
- https://orcid.org/http://orcid.org/0000-0002-2398-3690
- Neue Suche nach: Franklin, S. Angen
- Weitere Informationen zu Franklin, S. Angen:
- https://orcid.org/http://orcid.org/0009-0002-8834-4619
- Neue Suche nach: Nirmal, D.
- Weitere Informationen zu Nirmal, D.:
- https://orcid.org/http://orcid.org/0000-0002-9751-2816
- Neue Suche nach: A, Angelin Delighta
- Weitere Informationen zu A, Angelin Delighta:
- https://orcid.org/http://orcid.org/0009-0002-2347-7103
- Neue Suche nach: I.V, Binola K Jebalin.
- Weitere Informationen zu I.V, Binola K Jebalin.:
- https://orcid.org/http://orcid.org/0000-0002-9101-6889
- Neue Suche nach: Ajayan, J.
- Weitere Informationen zu Ajayan, J.:
- https://orcid.org/http://orcid.org/0000-0002-2398-3690
- Neue Suche nach: Franklin, S. Angen
- Weitere Informationen zu Franklin, S. Angen:
- https://orcid.org/http://orcid.org/0009-0002-8834-4619
- Neue Suche nach: Nirmal, D.
- Weitere Informationen zu Nirmal, D.:
- https://orcid.org/http://orcid.org/0000-0002-9751-2816
In:
Silicon
;
16
, 6
;
2659-2670
;
2024
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications
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Weitere Titelangaben:Silicon
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Beteiligte:A, Angelin Delighta ( Autor:in ) / I.V, Binola K Jebalin. ( Autor:in ) / Ajayan, J. ( Autor:in ) / Franklin, S. Angen ( Autor:in ) / Nirmal, D. ( Autor:in )
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Erschienen in:Silicon ; 16, 6 ; 2659-2670
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Verlag:
- Neue Suche nach: Springer Netherlands
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Erscheinungsort:Dordrecht
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Erscheinungsdatum:01.04.2024
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Format / Umfang:12 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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