Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device (Englisch)
- Neue Suche nach: Kumar, Prashanth
- Neue Suche nach: WasimArif
- Neue Suche nach: Bhowmick, Brinda
- Neue Suche nach: Kumar, Prashanth
- Neue Suche nach: WasimArif
- Neue Suche nach: Bhowmick, Brinda
In:
Silicon
;
10
, 3
;
811-820
;
2017
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device
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Beteiligte:
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Erschienen in:Silicon ; 10, 3 ; 811-820
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Verlag:
- Neue Suche nach: Springer Netherlands
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Erscheinungsort:Dordrecht
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Erscheinungsdatum:21.04.2017
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Format / Umfang:10 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 10, Ausgabe 3
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