Effect of Ta2O5 doping on the electrical properties of 0.99SnO2 x 0.01CoO ceramic (Englisch)
- Neue Suche nach: Antunes, A.C.
- Neue Suche nach: Antunes, S.M.
- Neue Suche nach: Pianaro, S.A.
- Neue Suche nach: Longo, E.
- Neue Suche nach: Varela, J.A.
- Neue Suche nach: Antunes, A.C.
- Neue Suche nach: Antunes, S.M.
- Neue Suche nach: Pianaro, S.A.
- Neue Suche nach: Longo, E.
- Neue Suche nach: Varela, J.A.
In:
Journal of Materials Science
;
35
, 6
;
1453-1458
;
2000
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Effect of Ta2O5 doping on the electrical properties of 0.99SnO2 x 0.01CoO ceramic
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Weitere Titelangaben:Einfluß der Ta2O3-Dotierung aud die elektrischen Eigenschaften der (0.99)SnO2-(0.0l)CoO-Keramik
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Beteiligte:Antunes, A.C. ( Autor:in ) / Antunes, S.M. ( Autor:in ) / Pianaro, S.A. ( Autor:in ) / Longo, E. ( Autor:in ) / Varela, J.A. ( Autor:in )
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Erschienen in:Journal of Materials Science ; 35, 6 ; 1453-1458
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Verlag:
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Erscheinungsdatum:2000
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Format / Umfang:6 Seiten, 9 Bilder, 2 Tabellen, 21 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Fremdatomzusatz , Tantaloxid , Zinnoxid , Cobaltoxid , Mikrogefüge , Korngröße , thermische Emission , Pressen , Sintern , Rasterelektronenmikroskopie , Röntgenbeugung , theoretische Dichte , Gitterkonstante (Kristallgitter) , elektrische Leitfähigkeit , Temperatureinfluss , elektrischer Durchbruch , elektrisches Feld , Stromdichte , Schottky-Kontakt , Potenzialbarriere , Sperrschichthöhe , Ladungstransport (elektrische Ladung) , spannungsabhängiger Widerstand
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Datenquelle:
Inhaltsverzeichnis – Band 35, Ausgabe 6
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