Fabrication and magnetoresistance properties of spin-dependent tunnel junctions using an epitaxial Fe3O4 film (Englisch)
- Neue Suche nach: Matsuda, H.
- Neue Suche nach: Takeuchi, M.
- Neue Suche nach: Adachi, H.
- Neue Suche nach: Hiramoto, M.
- Neue Suche nach: Matsukawa, N.
- Neue Suche nach: Odagawa, A.
- Neue Suche nach: Setsune, K.
- Neue Suche nach: Sakakima, H.
- Neue Suche nach: Matsuda, H.
- Neue Suche nach: Takeuchi, M.
- Neue Suche nach: Adachi, H.
- Neue Suche nach: Hiramoto, M.
- Neue Suche nach: Matsukawa, N.
- Neue Suche nach: Odagawa, A.
- Neue Suche nach: Setsune, K.
- Neue Suche nach: Sakakima, H.
In:
Japanese Journal of Applied Physics, Part 2 Letters
;
41
, 4A
;
387-390
;
2002
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Fabrication and magnetoresistance properties of spin-dependent tunnel junctions using an epitaxial Fe3O4 film
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Weitere Titelangaben:Herstellung und magnetoresistive Eigenschaften von Spin-abhängigen Tunnelkontakten unter Verwendung eines epitaxialen Fe3O4-Films
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Beteiligte:Matsuda, H. ( Autor:in ) / Takeuchi, M. ( Autor:in ) / Adachi, H. ( Autor:in ) / Hiramoto, M. ( Autor:in ) / Matsukawa, N. ( Autor:in ) / Odagawa, A. ( Autor:in ) / Setsune, K. ( Autor:in ) / Sakakima, H. ( Autor:in )
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Erschienen in:Japanese Journal of Applied Physics, Part 2 Letters ; 41, 4A ; 387-390
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Verlag:
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Erscheinungsdatum:2002
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Format / Umfang:4 Seiten, 5 Bilder, 16 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:Magnetit , dünne Schicht , Epitaxialschicht , Tunneleffekt , Magnetowiderstand (Eigenschaft) , Substrat , Magnesiumoxid , Einkristall , Pufferschicht , Titannitrid , Mehrfachschicht , Aluminiumoxid , Stöchiometrie , Cobalteisenlegierung , Sputterabscheidung , Ionenätzen , Argonion , magnetische Hysterese , Raumtemperatur , Koerzitivfeld , Temperaturabhängigkeit , Röntgenbeugung , Magnetisierungskurve
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Datenquelle:
Inhaltsverzeichnis – Band 41, Ausgabe 4A
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