Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 mu m VCSELs (Englisch)
- Neue Suche nach: Reddy, M.H.M.
- Neue Suche nach: Asano, T.
- Neue Suche nach: Koda, R.
- Neue Suche nach: Buell, D.A.
- Neue Suche nach: Coldren, L.A.
- Neue Suche nach: Reddy, M.H.M.
- Neue Suche nach: Asano, T.
- Neue Suche nach: Koda, R.
- Neue Suche nach: Buell, D.A.
- Neue Suche nach: Coldren, L.A.
In:
Electronics Letters
;
38
, 20
;
1181-1182
;
2002
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 mu m VCSELs
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Beteiligte:Reddy, M.H.M. ( Autor:in ) / Asano, T. ( Autor:in ) / Koda, R. ( Autor:in ) / Buell, D.A. ( Autor:in ) / Coldren, L.A. ( Autor:in )
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Erschienen in:Electronics Letters ; 38, 20 ; 1181-1182
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Verlag:
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Erscheinungsdatum:2002
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Format / Umfang:2 Seiten, 10 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 38, Ausgabe 20
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