Novel organopalladium material formed on a sulfur-terminated GaAs(001) surface (Englisch)
- Neue Suche nach: Arisawa, M.
- Neue Suche nach: Tsukamoto, S.
- Neue Suche nach: Shimoda, M.
- Neue Suche nach: Pristovsek, M.
- Neue Suche nach: Nishida, A.
- Neue Suche nach: Arisawa, M.
- Neue Suche nach: Tsukamoto, S.
- Neue Suche nach: Shimoda, M.
- Neue Suche nach: Pristovsek, M.
- Neue Suche nach: Nishida, A.
In:
Japanese Journal of Applied Physics, Part 2 Letters
;
41
, 11A
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1197-1199
;
2002
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Novel organopalladium material formed on a sulfur-terminated GaAs(001) surface
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Weitere Titelangaben:Bildung eines neue Organopalladiummaterials auf einer Schwefel-beladenen GaAs(001)-Oberfläche
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Beteiligte:Arisawa, M. ( Autor:in ) / Tsukamoto, S. ( Autor:in ) / Shimoda, M. ( Autor:in ) / Pristovsek, M. ( Autor:in ) / Nishida, A. ( Autor:in )
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Erschienen in:Japanese Journal of Applied Physics, Part 2 Letters ; 41, 11A ; 1197-1199
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Verlag:
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Erscheinungsdatum:2002
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Format / Umfang:3 Seiten, 2 Bilder, 2 Tabellen, 33 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 41, Ausgabe 11A
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