Relation between hole traps and hydrogenous species in silicon dioxides (MOS devices) (Englisch)
- Neue Suche nach: Zhang, J.F.
- Neue Suche nach: Zhao, C.Z.
- Neue Suche nach: Sii, H.K.
- Neue Suche nach: Groeseneken, G.
- Neue Suche nach: Degraeve, R.
- Neue Suche nach: Ellis, J.N.
- Neue Suche nach: Beech, C.D.
- Neue Suche nach: Zhang, J.F.
- Neue Suche nach: Zhao, C.Z.
- Neue Suche nach: Sii, H.K.
- Neue Suche nach: Groeseneken, G.
- Neue Suche nach: Degraeve, R.
- Neue Suche nach: Ellis, J.N.
- Neue Suche nach: Beech, C.D.
In:
Solid State Electronics
;
46
, 11
;
1839-1847
;
2002
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Relation between hole traps and hydrogenous species in silicon dioxides (MOS devices)
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Beteiligte:Zhang, J.F. ( Autor:in ) / Zhao, C.Z. ( Autor:in ) / Sii, H.K. ( Autor:in ) / Groeseneken, G. ( Autor:in ) / Degraeve, R. ( Autor:in ) / Ellis, J.N. ( Autor:in ) / Beech, C.D. ( Autor:in )
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Erschienen in:Solid State Electronics ; 46, 11 ; 1839-1847
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Verlag:
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Erscheinungsdatum:2002
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Format / Umfang:9 Seiten, 26 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 46, Ausgabe 11
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