Carbon nanotube field-effect transistor for GHZ operation (Englisch)
- Neue Suche nach: Bethoux, J.M.
- Neue Suche nach: Happy, H.
- Neue Suche nach: Dambrine, G.
- Neue Suche nach: Borghetti, J.
- Neue Suche nach: Derycke, V.
- Neue Suche nach: Goffman, M.
- Neue Suche nach: Bourgoin, J.P.
- Neue Suche nach: Bethoux, J.M.
- Neue Suche nach: Happy, H.
- Neue Suche nach: Dambrine, G.
- Neue Suche nach: Borghetti, J.
- Neue Suche nach: Derycke, V.
- Neue Suche nach: Goffman, M.
- Neue Suche nach: Bourgoin, J.P.
In:
ESSDERC, European Solid-State Device Research Conference, 36
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206-209
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2006
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Carbon nanotube field-effect transistor for GHZ operation
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Beteiligte:Bethoux, J.M. ( Autor:in ) / Happy, H. ( Autor:in ) / Dambrine, G. ( Autor:in ) / Borghetti, J. ( Autor:in ) / Derycke, V. ( Autor:in ) / Goffman, M. ( Autor:in ) / Bourgoin, J.P. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE Operations Center
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Erscheinungsort:Piscataway
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Erscheinungsdatum:2006
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Format / Umfang:4 Seiten, 13 Quellen
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ISBN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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- 423
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Non-Linear Gate Length Dependence of On-Current in Si-Nanowire FETsWeber, W. / Graham, A. / Duesberg, G. / Liebau, M. / Cheze, C. / Geelhaar, L. / Unger, E. / Pamler, W. / Hoenlein, W. / Riechert, H. et al. | 2006
- 427
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Low temperature single electron characteristics in gate-all-around MOSFETsPott, Vincent / Bouvet, Didier / Boucart, Julien / Tschuor, Lucas / Moselund, Kirsten / Ionescu, Adrian et al. | 2006
- 431
-
Thermoelectric and Thermionic Micro-ConvertersGerstenmaier, Y. / Wachutka, G. et al. | 2006
- 435
-
Semi-insulating Czochralski-silicon for Radio Frequency ApplicationsMallik, Kanad / De Groot, C. / Ashburn, P. / Wilshaw, P. et al. | 2006
- 439
-
Fluoride Resonant Tunneling Diodes using Lattice-Matched Buffer Layers on Si SubstratesTsutsui, Kazuo / Matsudo, Natsuko / Maeda, Motoki / Watanabe, So et al. | 2006
- 443
-
Validity Of The Flat Band Perturbation Technique In Non-Ohmic RegionRoy, A. / Enz, C. et al. | 2006
- 447
-
Model for electron redistribution in silicon nitrideFurnemont, A. / Rosmeulen, M. / Houdt, J. / Meyer, K. / Maes, H. et al. | 2006
- 451
-
Impact of Fermi level pinning at polysilicon gate grain boundaries on nano-MOSFET variability: A 3-D simulation studyBrown, Andrew / Roy, Gareth / Asenov, Asen et al. | 2006
- 455
-
Analytical modelling of large signal cyclo-stationary low frequency noise for arbitrary periodic inputRoy, A. / Enz, C. et al. | 2006
- 459
-
Temperature Dependent Dielectric Absorption of MIM Capacitors: RF Characterization and ModelingRiess, P. / Baumgartner, P. et al. | 2006
- 463
-
Author index| 2006
- C1
-
Covers| 2006
- ii
-
Copyright page| 2006
- iii
-
Proceedings Contents| 2006
- iv
-
Foreword| 2006
- ix
-
Table of Contents| 2006
- v
-
Conference Committee| 2006
- vii
-
Breaker pages| 2006
- viii
-
Technical Co-Sponsors| 2006