Reactive ion etching of Ge2Sb2Te5 in CHF3/O2 plasma for nonvolatile phase-change memory device (Englisch)
- Neue Suche nach: Feng, Gaoming
- Neue Suche nach: Liu, Bo
- Neue Suche nach: Song, Zhitang
- Neue Suche nach: Feng, Songlin
- Neue Suche nach: Chen, Bomy
- Neue Suche nach: Feng, Gaoming
- Neue Suche nach: Liu, Bo
- Neue Suche nach: Song, Zhitang
- Neue Suche nach: Feng, Songlin
- Neue Suche nach: Chen, Bomy
In:
Electrochemical and Solid-State Letters
;
10
, 5
;
D47-50
;
2007
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Reactive ion etching of Ge2Sb2Te5 in CHF3/O2 plasma for nonvolatile phase-change memory device
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Beteiligte:Feng, Gaoming ( Autor:in ) / Liu, Bo ( Autor:in ) / Song, Zhitang ( Autor:in ) / Feng, Songlin ( Autor:in ) / Chen, Bomy ( Autor:in )
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Erschienen in:Electrochemical and Solid-State Letters ; 10, 5 ; D47-50
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Verlag:
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Erscheinungsdatum:2007
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Format / Umfang:4 Seiten, 15 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 10, Ausgabe 5
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