AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide (Englisch)
- Neue Suche nach: Gregusova, D.
- Neue Suche nach: Stoklas, R.
- Neue Suche nach: Cico, K.
- Neue Suche nach: Lalinsky, T.
- Neue Suche nach: Kordos, P.
- Neue Suche nach: Gregusova, D.
- Neue Suche nach: Stoklas, R.
- Neue Suche nach: Cico, K.
- Neue Suche nach: Lalinsky, T.
- Neue Suche nach: Kordos, P.
In:
Semiconductor Science and Technology
;
22
, 8
;
947-951
;
2007
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
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Beteiligte:Gregusova, D. ( Autor:in ) / Stoklas, R. ( Autor:in ) / Cico, K. ( Autor:in ) / Lalinsky, T. ( Autor:in ) / Kordos, P. ( Autor:in )
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Erschienen in:Semiconductor Science and Technology ; 22, 8 ; 947-951
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Verlag:
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Erscheinungsdatum:2007
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Format / Umfang:5 Seiten, 6 Bilder, 21 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 22, Ausgabe 8
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