Growth of dysprosium-, scandium, and hafnium-based third generation high-kappa dielectrics by atomic vapor deposition (Englisch)
- Neue Suche nach: Adelmann, Christoph
- Neue Suche nach: Lehnen, Peer
- Neue Suche nach: Elshocht, Sven van
- Neue Suche nach: Zhao, Chao
- Neue Suche nach: Brijs, Bert
- Neue Suche nach: Franquet, Alexis
- Neue Suche nach: Conard, Thierry
- Neue Suche nach: Roeckerath, Martin
- Neue Suche nach: Schubert, Jürgen
- Neue Suche nach: Boissiere, Olivier
- Neue Suche nach: Lohe, Christoph
- Neue Suche nach: Gendt, Stefan de
- Neue Suche nach: Adelmann, Christoph
- Neue Suche nach: Lehnen, Peer
- Neue Suche nach: Elshocht, Sven van
- Neue Suche nach: Zhao, Chao
- Neue Suche nach: Brijs, Bert
- Neue Suche nach: Franquet, Alexis
- Neue Suche nach: Conard, Thierry
- Neue Suche nach: Roeckerath, Martin
- Neue Suche nach: Schubert, Jürgen
- Neue Suche nach: Boissiere, Olivier
- Neue Suche nach: Lohe, Christoph
- Neue Suche nach: Gendt, Stefan de
In:
CVD - Chemical Vapor Deposition
;
13
, 10
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567-573
;
2007
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Growth of dysprosium-, scandium, and hafnium-based third generation high-kappa dielectrics by atomic vapor deposition
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Weitere Titelangaben:Züchtung von Dielektrika mit hohem kappa der dritten Generation auf der Basis von Dysprosium, Scandium und Hafnium durch atomare Dampfabscheidung
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Beteiligte:Adelmann, Christoph ( Autor:in ) / Lehnen, Peer ( Autor:in ) / Elshocht, Sven van ( Autor:in ) / Zhao, Chao ( Autor:in ) / Brijs, Bert ( Autor:in ) / Franquet, Alexis ( Autor:in ) / Conard, Thierry ( Autor:in ) / Roeckerath, Martin ( Autor:in ) / Schubert, Jürgen ( Autor:in ) / Boissiere, Olivier ( Autor:in )
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Erschienen in:CVD - Chemical Vapor Deposition ; 13, 10 ; 567-573
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Verlag:
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Erscheinungsdatum:2007
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Format / Umfang:7 Seiten, 9 Bilder, 32 Quellen
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 13, Ausgabe 10
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- 519
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Contents: Chem. Vap. Deposition 10-2007| 2007
- 520
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Focused Electron Beam Induced Deposition of Si-Based Materials From SiOxCy to Stoichiometric SiO2: Chemical Compositions, Chemical-Etch Rates, and Deep Ultraviolet Optical TransmissionsPerentes, A. et al. | 2007
- 523
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Citation Network of CVD Research: Research Topics and JournalsTakeda, Y. / Kajikawa, Y. / Matsushima, K. et al. | 2007
- 523
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Citation Network of CVD Research: Research Topics and JournalsFNR HREF="fn1">FN ID="fn1">This research was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Young Scientists (B), 18700240, 2006.Takeda, Y. et al. | 2007
- 527
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Oriented Bicrystalline GaN Nanowire Arrays suitable for Field Emission ApplicationsChen, Z. / Cao, C. B. / Zhu, H. S. et al. | 2007
- 527
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Oriented Bicrystalline GaN Nanowire Arrays suitable for Field Emission ApplicationsFNR HREF="fn1">FN ID="fn1">This work was supported by the National Science Foundation of China under Grant No. 20471007.Chen, Z. et al. | 2007
- 533
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Large Area Growth of Aligned CNT Arrays on Spheres: Towards Large Scale and Continuous ProductionXiang, R. / Luo, G. H. / Qian, W. Z. / Wang, Y. / Wei, F. / Li, Q. et al. | 2007
- 533
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Large Area Growth of Aligned CNT Arrays on Spheres: Towards Large Scale and Continuous ProductionFNR HREF="fn1">FN ID="fn1">The work was supported by China National '863' Program (No. 2003AA302630), China National Program (No. 2006CB932702), NSFC Key Program (No. 20236020), FANEDD (No. 200548), Key Project of Chinese Ministry of Education (No. 106011), THSJZ, and National Center for Nanoscience and Technology of China (Nanoctr). Supporting Information is available online from Wiley Inter-Science or from the author.Xiang, R. et al. | 2007
- 537
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Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO2 on Al2O3 (0001)Sousa, P. M. / Dias, S. A. / Conde, O. / Silvestre, A. J. / Branford, W. R. / Morris, B. / Yates, K. A. / Cohen, L. F. et al. | 2007
- 537
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Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO2 on Al2O3 (0001)FNR HREF="fn1">FN ID="fn1">The authors gratefully acknowledge the financial support of Fundação para a Ciência e Tecnologia (FCT) under contract POCTI-CTM-41413-2001 and the EPSRC grant number GR-T03802. P.M. Sousa also acknowledges FCT for a PhD grant (BD16567-2004).Sousa, P. M et al. | 2007
- 546
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Atomic Layer Deposition of Gadolinium Oxide FilmsFNR HREF="fn1">FN ID="fn1">The authors thank Dr. Kai Arstila for the TOF-ERDA results. The study has been partially supported by the Academy of Finland.Kukli, K. et al. | 2007
- 546
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Atomic Layer Deposition of Gadolinium Oxide FilmsKukli, K. / Hatanpaa, T. / Ritala, M. / Leskela, M. et al. | 2007
- 553
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Coating of Ceramic SiC, SiBNC, and Al2O3 Fibers with SiBN Using a Continuous CVD Process - Influence of Stoichiometry on Stability against Oxidation and HydrolysisFNR HREF="fn1">FN ID="fn1">We thank Dr. Schulze for TEM measurements, Dr. Baumann for EPMA, and Dr. M. Braun and Dr. K. Nestler for DSC measurements. We thank the Fraunhofer-Institut für Silicatforschung ISC, Würzburg for kindly providing the SiBNC-fibres.This work was in part financed via the Federal Ministry of Education & Research of Germany in the framework of the project "technological developments for non-oxidic reinforcement fibers in the system SiBNC (03N3112)".Stöckel, S. et al. | 2007
- 553
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Coating of Ceramic SiC, SiBNC, and Al2O3 Fibers with SiBN Using a Continuous CVD Process - Influence of Stoichiometry on Stability against Oxidation and HydrolysisStockel, S. / Marx, G. / Goedel, W. A. et al. | 2007
- 561
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Low-Temperature PECVD of Nanodevice-Grade nc-3C-SiCFNR HREF="fn1">FN ID="fn1">This work was supported by the A*STAR (Singapore), Australian Research Council, and the University of Sydney. Supporting Information is available online from Wiley InterScience or from the author.Cheng, Q. J et al. | 2007
- 561
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Low-Temperature PECVD of Nanodevice-Grade nc-3C-SiCCheng, Q. J. / Xu, S. Y. / Long, J. D. / Ostrikov, K. et al. | 2007
- 567
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Growth of dysprosium-, scandium, and hafnium-based third generation high-kappa dielectrics by atomic vapor depositionAdelmann, Christoph / Lehnen, Peer / Elshocht, Sven van / Zhao, Chao / Brijs, Bert / Franquet, Alexis / Conard, Thierry / Roeckerath, Martin / Schubert, Jürgen / Boissiere, Olivier et al. | 2007
- 567
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Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-k Dielectrics by Atomic Vapor DepositionAdelmann, C. / Lehnen, P. / Van Elshocht, S. / Zhao, C. / Brijs, B. / Franquet, A. / Conard, T. / Roeckerath, M. / Schubert, J. / Boissiere, O. et al. | 2007
- 567
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Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor DepositionFNR HREF="fn1">FN ID="fn1">This work was supported in part by the European Commission as a contribution to the project PULLNANO under contract No IST-026828 from the Information Society Technologies Programme (IST) within the European Union's Sixth RTD Framework Programme. Rob Trussell (Bede Scientific, Inc.) is acknowledged for experimental support of the GIXRD measurements.Adelmann, C. et al. | 2007
- 574
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Atmospheric Pressure MOCVD of Thin Fe Films on Carbon FibersLuo, J.-H. et al. | 2007
- 581
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Author Index and Subject Index Chem. Vap. Deposition 10-2007| 2007
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Cover Picture: Cover image Wei and co-workers (Chem. Vap. Deposition 2007, 13, 533) (Chem. Vap. Deposition 10-2007)| 2007