AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 micron (Englisch)
- Neue Suche nach: Perona, A.
- Neue Suche nach: Garnache, A.
- Neue Suche nach: Cerutti, L.
- Neue Suche nach: Ducanchez, A.
- Neue Suche nach: Mihindou, S.
- Neue Suche nach: Grech, P.
- Neue Suche nach: Boissier, G.
- Neue Suche nach: Genty, F.
- Neue Suche nach: Perona, A.
- Neue Suche nach: Garnache, A.
- Neue Suche nach: Cerutti, L.
- Neue Suche nach: Ducanchez, A.
- Neue Suche nach: Mihindou, S.
- Neue Suche nach: Grech, P.
- Neue Suche nach: Boissier, G.
- Neue Suche nach: Genty, F.
In:
Semiconductor Science and Technology
;
22
, 10
;
1140-1144
;
2007
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 micron
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Weitere Titelangaben:Dotierte verteilte AlAsSb/GaSb-Bragg-Reflektoren für elektrisch gepumpte 2,3-mym-VCSEL-Laser
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Beteiligte:Perona, A. ( Autor:in ) / Garnache, A. ( Autor:in ) / Cerutti, L. ( Autor:in ) / Ducanchez, A. ( Autor:in ) / Mihindou, S. ( Autor:in ) / Grech, P. ( Autor:in ) / Boissier, G. ( Autor:in ) / Genty, F. ( Autor:in )
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Erschienen in:Semiconductor Science and Technology ; 22, 10 ; 1140-1144
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Verlag:
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Erscheinungsdatum:2007
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Format / Umfang:5 Seiten, 4 Bilder, 1 Tabelle, 22 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:VCSEL-Laser , Bragg-Reflexionsbedingung , Reflektor (Optik) , Pumpen eines Lasers , Dotierungsprofil , Tiefenprofil (Abstand unter Oberfläche) , Aluminiumarsenid , Galliumantimonid , Dotierung (Halbleiter) , Grenzflächenstruktur , optischer Verlust , Spannungsabfall , Molekularstrahlepitaxie , Strom-Spannungs-Kennlinie
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Datenquelle:
Inhaltsverzeichnis – Band 22, Ausgabe 10
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