Power LDMOS with novel STI profile for improved Rsp, BVdss, and reliability (Englisch)
- Neue Suche nach: Haynie, S.
- Neue Suche nach: Gabrys, A.
- Neue Suche nach: Kwon, T.
- Neue Suche nach: Allard, P.
- Neue Suche nach: Strout, J.
- Neue Suche nach: Strachan, A.
- Neue Suche nach: Haynie, S.
- Neue Suche nach: Gabrys, A.
- Neue Suche nach: Kwon, T.
- Neue Suche nach: Allard, P.
- Neue Suche nach: Strout, J.
- Neue Suche nach: Strachan, A.
In:
ISPSD, International Symposium on Power Semiconductor Devices & IC's, 22
;
241-244
;
2010
-
ISBN:
- Aufsatz (Konferenz) / Print
-
Titel:Power LDMOS with novel STI profile for improved Rsp, BVdss, and reliability
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Beteiligte:Haynie, S. ( Autor:in ) / Gabrys, A. ( Autor:in ) / Kwon, T. ( Autor:in ) / Allard, P. ( Autor:in ) / Strout, J. ( Autor:in ) / Strachan, A. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: IEEE Operations Center
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Erscheinungsort:Piscataway
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Erscheinungsdatum:2010
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Format / Umfang:4 Seiten, 3 Quellen
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ISBN:
-
Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis Konferenzband
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