Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide–based silica slurries containing oxalic acid or citric acid (Englisch)
- Neue Suche nach: Matovu, John B.
- Neue Suche nach: Ong, Patrick
- Neue Suche nach: Teugels, Lieve G.
- Neue Suche nach: Leunissen, Leonardus H.A.
- Neue Suche nach: Babu, S.V.
- Neue Suche nach: Matovu, John B.
- Neue Suche nach: Ong, Patrick
- Neue Suche nach: Teugels, Lieve G.
- Neue Suche nach: Leunissen, Leonardus H.A.
- Neue Suche nach: Babu, S.V.
In:
Microelectronic Engineering
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116
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17-21
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2014
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide–based silica slurries containing oxalic acid or citric acid
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Beteiligte:Matovu, John B. ( Autor:in ) / Ong, Patrick ( Autor:in ) / Teugels, Lieve G. ( Autor:in ) / Leunissen, Leonardus H.A. ( Autor:in ) / Babu, S.V. ( Autor:in )
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Erschienen in:Microelectronic Engineering ; 116 ; 17-21
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Verlag:
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Erscheinungsdatum:2014
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Format / Umfang:5 Seiten, 14 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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