High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model (Englisch)
- Neue Suche nach: Fang, Yu-Long
- Neue Suche nach: Feng, Zhi-Hong
- Neue Suche nach: Li, Cheng-Ming
- Neue Suche nach: Song, Xu-Bo
- Neue Suche nach: Yin, Jia-Yun
- Neue Suche nach: Zhou, Xing-Ye
- Neue Suche nach: Wang, Yuan-Gang
- Neue Suche nach: Lv, Yuan-Jie
- Neue Suche nach: Cai, Shu-Jun
- Neue Suche nach: Fang, Yu-Long
- Neue Suche nach: Feng, Zhi-Hong
- Neue Suche nach: Li, Cheng-Ming
- Neue Suche nach: Song, Xu-Bo
- Neue Suche nach: Yin, Jia-Yun
- Neue Suche nach: Zhou, Xing-Ye
- Neue Suche nach: Wang, Yuan-Gang
- Neue Suche nach: Lv, Yuan-Jie
- Neue Suche nach: Cai, Shu-Jun
In:
Chinese Physics Letters
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32
, 3
;
037202/1-037202/4
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model
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Beteiligte:Fang, Yu-Long ( Autor:in ) / Feng, Zhi-Hong ( Autor:in ) / Li, Cheng-Ming ( Autor:in ) / Song, Xu-Bo ( Autor:in ) / Yin, Jia-Yun ( Autor:in ) / Zhou, Xing-Ye ( Autor:in ) / Wang, Yuan-Gang ( Autor:in ) / Lv, Yuan-Jie ( Autor:in ) / Cai, Shu-Jun ( Autor:in )
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Erschienen in:Chinese Physics Letters ; 32, 3 ; 037202/1-037202/4
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Verlag:
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Erscheinungsdatum:2015
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Format / Umfang:4 Seiten, 12 Quellen
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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