Extraction of interface state density in oxide/III–V gate stacks (Englisch)
- Neue Suche nach: Veksler, D.
- Neue Suche nach: Bersuker, G.
- Neue Suche nach: Madan, H.
- Neue Suche nach: Morassi, L.
- Neue Suche nach: Verzellesi, G.
- Neue Suche nach: Veksler, D.
- Neue Suche nach: Bersuker, G.
- Neue Suche nach: Madan, H.
- Neue Suche nach: Morassi, L.
- Neue Suche nach: Verzellesi, G.
In:
Semiconductor Science and Technology
;
30
, 6
;
065013/1-065013/8
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Extraction of interface state density in oxide/III–V gate stacks
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Beteiligte:Veksler, D. ( Autor:in ) / Bersuker, G. ( Autor:in ) / Madan, H. ( Autor:in ) / Morassi, L. ( Autor:in ) / Verzellesi, G. ( Autor:in )
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Erschienen in:Semiconductor Science and Technology ; 30, 6 ; 065013/1-065013/8
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Verlag:
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Erscheinungsdatum:2015
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Format / Umfang:8 Seiten, 14 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 30, Ausgabe 6
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