Submicron IC reliability research at Berkeley (Englisch)
- Neue Suche nach: Chenming, Hu
- Neue Suche nach: Chenming, Hu
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Submicron IC reliability research at Berkeley
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Weitere Titelangaben:Untersuchung der Zuverlässigkeit von integrierten Schaltungen im Submikrometerbereich an der Berkeley Universität
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Beteiligte:Chenming, Hu ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: EOS/ESD Association
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Erscheinungsort:Rome
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Erscheinungsdatum:1989
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Format / Umfang:6 Seiten, 10 Bilder, 36 Quellen
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Submicron IC reliability research at BerkeleyChenming, Hu et al. | 1989
- 7
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Surface resistivity and static decay do not correlateFowler, S. et al. | 1989
- 12
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Description of various techniques developed to evaluate the effectiveness of a new design of electrostatic neutralizerPoidras, P.J. / Piret, J.J. et al. | 1989
- 18
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Ozone and small particle production by steady state DC hood ionization: An evaluationMurray, K. / Gross, V. et al. | 1989
- 23
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Controlling voltage on personnelKolyer, J.M. / Watson, D.E. / Anderson, W.E. / Cullop, D.M. et al. | 1989
- 43
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Theoretical and empirical analysis of the effects of circuit parasitics on the calibration of HBM ESD simulatorsBilodeau, T.M. et al. | 1989
- 55
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A severe human ESD model for safety and high reliability system qualification testingFisher, R.J. et al. | 1989
- 59
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A field-induced charged-device model simulatorRenninger, R.G. / Min-Chung Jon / Lin, D.L. / Diep, T. / Welsher, T.L. et al. | 1989
- 72
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Analysis of ESD protection on vendor partsHyde, P. / Domingos, H. et al. | 1989
- 78
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High current ESD damage to MOS I/O structures caused by charged video monitor surfaces and casingsPon, H. / Kosonooky, G. / Maloney, T. et al. | 1989
- 84
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Electrostatic-discharge detectorsSchrimpf, R.D. / Hsueh, P.W. / Lendenmann, H. / Frodemwalt, J.N. et al. | 1989
- 102
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Test method to characterize triboelectric properties of adhesive tapesShah, B.M. / Unger, B.A. et al. | 1989
- 107
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Manufacturers qualification process for ESD materialsKropf, W. / Royce, S. / Russell, P.G. et al. | 1989
- 111
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Development of the corporate ESD control programme within british telecommunicationsStoker, D.K. et al. | 1989
- 114
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Applying high frequency techniques to measuring ESD phenomena and its effectsSmith, D.C. et al. | 1989
- 121
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On latency andthe physical mechanisms underlying gate oxide damage during ESD events in n-channel mosfetsKrakauer, D.B. / Mistry, K.R. et al. | 1989
- 127
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The double graded transistor and its beneficial effect on resistance to current mode second breakdownHassan, M.M. / Damingos, H. et al. | 1989
- 136
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The dynamics of electrostatic discharge prior to bipolar action related snap-backKrieger, G. et al. | 1989
- 145
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Simulation of the EMP from ESDBoverie, B. et al. | 1989
- 149
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A new method for assessing the susceptibility of CMOS integrated circuits to latch-up: The system-transient techniqueChwastek, E.J. et al. | 1989
- 157
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The dependence of electrostatic destruction voltage on device structures of P-N junctions and insulated filmsMaeda, N. / Wada, T. et al. | 1989
- 162
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Designing high performance bipolar devices for high ESD robustnessGendron, R.P. et al. | 1989
- 167
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Improving the ESD failure threshold of silicided nMOS output transistors by ensuring uniform current flowPolgreen, T. / Chatterjee, A. et al. | 1989
- 175
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A'Waffle' layout technique strengthens the ESD hardness ofthe NMOS output transistorBaker, L. / Currence, R. / Law, S. / Le, M. / Lee, C. / Lin, S.T. / Teene, M. et al. | 1989
- 182
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Novel ESD protection for advanced CMOS output driversRieck, G. / Manely, R. et al. | 1989
- 190
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Input protection design for overall chip reliabilityDuvvury, C. / Taylor, T. / Lindgren, J. / Morris, J. / Kumar, S. et al. | 1989