An a-Si:H/a-Si, Ge:H bulk barrier phototransistor with a-SiC:H barrier enhancement layer for high-grain IR optical detector (Englisch)
- Neue Suche nach: Hwang, S.B.
- Neue Suche nach: Fang, Y.K.
- Neue Suche nach: Chen, K.H.
- Neue Suche nach: Liu, C.R.
- Neue Suche nach: Hwang, J.D.
- Neue Suche nach: Chou, M.H.
- Neue Suche nach: Hwang, S.B.
- Neue Suche nach: Fang, Y.K.
- Neue Suche nach: Chen, K.H.
- Neue Suche nach: Liu, C.R.
- Neue Suche nach: Hwang, J.D.
- Neue Suche nach: Chou, M.H.
In:
IEEE Transactions on Electron Devices
;
40
, 4
;
721-726
;
1993
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:An a-Si:H/a-Si, Ge:H bulk barrier phototransistor with a-SiC:H barrier enhancement layer for high-grain IR optical detector
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Weitere Titelangaben:Ein a-Si:H/a-Si, Ge:H Bulk-Sperrschicht-Phototransistor mit einer a-SiC:H Sperr-Anreicherungsschicht für Hochverstärkungs-IR-Optodetektoren
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Beteiligte:Hwang, S.B. ( Autor:in ) / Fang, Y.K. ( Autor:in ) / Chen, K.H. ( Autor:in ) / Liu, C.R. ( Autor:in ) / Hwang, J.D. ( Autor:in ) / Chou, M.H. ( Autor:in )
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Erschienen in:IEEE Transactions on Electron Devices ; 40, 4 ; 721-726
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Verlag:
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Erscheinungsdatum:1993
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Format / Umfang:6 Seiten, 7 Bilder, 18 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 40, Ausgabe 4
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