2-D simulation of interface properties of a poylsilicon-contacted BJR: Is there a residual potential barrier after the oxide is broken? (Englisch)
- Neue Suche nach: Egley, J.L.
- Neue Suche nach: Egley, J.L.
In:
IEEE Transactions on Electron Devices
;
41
, 2
;
217-220
;
1994
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:2-D simulation of interface properties of a poylsilicon-contacted BJR: Is there a residual potential barrier after the oxide is broken?
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Weitere Titelangaben:Zweidimensionale Simulation der Grenzflächeneigenschaften eines mit Poly-Si kontaktierten BJR
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Beteiligte:Egley, J.L. ( Autor:in )
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Erschienen in:IEEE Transactions on Electron Devices ; 41, 2 ; 217-220
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Verlag:
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Erscheinungsdatum:1994
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Format / Umfang:4 Seiten, 3 Bilder, 19 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 41, Ausgabe 2
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