Cellular automata simulation of nanometre-scale MOSFETs (Englisch)
- Neue Suche nach: Saraniti, M.
- Neue Suche nach: Zandler, G.
- Neue Suche nach: Formicone, G.
- Neue Suche nach: Wigger, S.
- Neue Suche nach: Goodnick, S.
- Neue Suche nach: Saraniti, M.
- Neue Suche nach: Zandler, G.
- Neue Suche nach: Formicone, G.
- Neue Suche nach: Wigger, S.
- Neue Suche nach: Goodnick, S.
In:
Semiconductor Science and Technology
;
13
, 8A
;
A177-A179
;
1998
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Cellular automata simulation of nanometre-scale MOSFETs
-
Beteiligte:Saraniti, M. ( Autor:in ) / Zandler, G. ( Autor:in ) / Formicone, G. ( Autor:in ) / Wigger, S. ( Autor:in ) / Goodnick, S. ( Autor:in )
-
Erschienen in:Semiconductor Science and Technology ; 13, 8A ; A177-A179
-
Verlag:
-
Erscheinungsdatum:1998
-
Format / Umfang:3 Seiten, 5 Bilder, 9 Quellen
-
ISSN:
-
Coden:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:Submikrometerbereich , MOS-FET , Drain (FET) , Strom-Spannungs-Kennlinie , Übertragungsfunktion , Dotierungsprofil , Kanal (FET) , nichtlineare Verzerrung , Packungsdichte (Schaltung) , Monte-Carlo-Methode , Stochastik , Gasphasenabscheidung , Gasphasenepitaxie , Ladungstransport (elektrische Ladung) , Modellsimulation , Schaltungslogik , Zellular-Array , Standardzelle (integrierte Schaltung) , nichtlineares System , Automatentheorie , MOS-Struktur , Nanostruktur
-
Datenquelle:
Inhaltsverzeichnis – Band 13, Ausgabe 8A
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- A1
-
Electronic properties in quantum dots with asymmetric confining potentialT Ezaki / Y Sugimoto / N Mori / C Hamaguchi et al. | 1998
- A4
-
Intrinsic stable orbits in open quantum dotsJ P Bird / R Akis / D K Ferry / J Cooper / K Ishibashi / Y Ochiai / Y Aoyagi / T Sugano et al. | 1998
- A7
-
The roles of leads and periodic orbits in the conductance fluctuations of high-mobility quantum dotsI V Zozoulenko / A S Sachrajda / P Zawadzki / K-F Berggren / Y Feng / Z Wasilewski et al. | 1998
- A11
-
The effect of mode coupling on conductance fluctuations in ballistic quantum dotsD P Pivin Jr / J P Bird / R Akis / D K Ferry / Y Aoyagi / T Sugano et al. | 1998
- A15
-
Low-temperature magnetotransport in ballistic quantum dots and wiresY Ochiai / L-H Lin / K Yamamoto / K Ishibashi / Y Aoyagi / T Sugano / J P Bird / D Vasileska / R Akis / D K Ferry et al. | 1998
- A18
-
Closed versus open: to what extent do leads influence the magnetotransport in square quantum dots?R Akis / D K Ferry et al. | 1998
- A21
-
Size-dependent effects on the magnetotransport fluctuations of square quantum dotsN Holmberg / R Akis / D P Pivin Jr / J P Bird / D K Ferry et al. | 1998
- A24
-
Triangular ballistic quantum dots: classical, semiclassical and wave mechanical electron dynamicsH Linke / K-F Berggren / L Christensson / P E Lindelof / A Löfgren / P Omling / M Yousefi / I V Zozoulenko et al. | 1998
- A27
-
Nonsymmetric conduction induced by the shape of electron billiardsH Linke / W Sheng / H Xu / P Omling / P E Lindelof et al. | 1998
- A30
-
Localized plasmons in point contactsHenrik Bruus / Karsten Flensberg et al. | 1998
- A33
-
On properties of boundaries and electron conductivity in mesoscopic polycrystalline silicon films for memory devicesG P Berman / G D Doolen / R Mainieri / J Rehacek / D K Campbell / V A Luchnikov / K E Nagaev et al. | 1998
- A37
-
3D simulation of GaAs/AlGaAs quantum dot point contact structuresD Vasileska / M N Wybourne / S M Goodnick / A D Gunther et al. | 1998
- A41
-
Scale factor mapping of statistical and exact self-similarity in billiardsA P Micolich / R P Taylor / J P Bird / R Newbury / T M Fromhold / J Cooper / Y Aoyagi / T Sugano et al. | 1998
- A44
-
Interfaces, boundaries and quantum device transportH L Grubin / D K Ferry et al. | 1998
- A47
-
Probing the interactions of on Si(100)- using anisotropic molecular manipulationP Moriarty / Y-R Ma / M D Upward / P H Beton / D Teehan et al. | 1998
- A47
-
Probing the interactions of C.60 on Si(100)-(2x1) using anisotropic molecular manipulationMoriarty, P. / Ma, Y.R. / Upward, M.D. / Beton, P.H. / Teehan, D. et al. | 1998
- A51
-
Fullerene-derived molecular electronic devicesM Menon / D Srivastava / S Saini et al. | 1998
- A55
-
Fluctuations in quantum dot charging energy and polarizationM Stopa et al. | 1998
- A59
-
Intrinsic dopant correlations and transport properties of mesoscopic modulation-doped heterostructuresS Das Sarma / S Kodiyalam et al. | 1998
- A63
-
Application of chemically enhanced vapour etching in the fabrication on nanostructuresM N Kozicki / B Kardynal / S-J Yang / T Kim / M V Sidorov / David J Smith et al. | 1998
- A67
-
Conductance oscillations in overgrown sub 100 nm InP/Ga(0.25)In(0.75)As quantum wiresMaximov, I. / Carlsson, N. / Omling, P. / Ramvall, P. / Samuelson, L. / Seifert, W. / Wang, Q. / Lourdudoss, S. / Rodriguez Messmer, E. / Forchel, A. et al. | 1998
- A67
-
Conductance oscillations in overgrown sub 100 nm InP/ quantum wiresI Maximov / N Carlsson / P Omling / P Ramvall / L Samuelson / W Seifert / Q Wang / S Lourdudoss / E Rodriguez Messmer / A Forchel et al. | 1998
- A71
-
Compatibility of cobalt and chromium depletion gates with RPECVD upper gate oxide for silicon-based nanostructuresM J Rack / A D Gunther / M Khoury / D Vasileska / D K Ferry / M Sidorov et al. | 1998
- A75
-
A metal/oxide tunnelling transistorE S Snow / P M Campbell / R W Rendell / F A Buot / D Park / C R K Marrian / R Magno et al. | 1998
- A79
-
Nanolithography by non-contact AFM-induced local oxidation: fabrication of tunnelling barriers suitable for single-electron devicesB Irmer / M Kehrle / H Lorenz / J P Kotthaus et al. | 1998
- A83
-
Measuring the mechanical resonance of a GaAs/AlGaAs cantilever using a strain-sensing field-effect transistorR G Beck / M A Eriksson / R M Westervelt / K D Maranowski / A C Gossard et al. | 1998
- A86
-
Dual-side electron beam lithography for independent submicron gating of double quantum well devicesJ R Wendt / J A Simmons / J S Moon / W E Baca / M A Blount / J L Reno et al. | 1998
- A90
-
Stability and band offsets of AlN/GaN heterostructures: impact on device performanceJ A Majewski / G Zandler / P Vogl et al. | 1998
- A93
-
Electron logic devices and nanoinstrumentation based on laterally patterned interaction-free quantum measurement structuresJ R Barker et al. | 1998
- A97
-
Relaxation rates of electrons in a quantum well embedded in a finite-size semiconductor slabV I Pipa / B A Glavin / V V Mitin / M Stroscio et al. | 1998
- A100
-
Strong suppression of spin splitting in quantum wires due to correlations induced by edge state screeningO G Balev / P Vasilopoulos et al. | 1998
- A104
-
A.c. transport and collective excitations in a quantum point contactI E Aronov / N N Beletskii / G P Berman / D K Campbell / G D Doolen / S V Dudiy / R Mainieri et al. | 1998
- A107
-
Single-electron tunnelling device with variable environmental impedanceF Wakaya / F Yoshioka / S Iwabuchi / H Higurashi / Y Nagaoka / K Gamo et al. | 1998
- A111
-
Room-temperature Coulomb-blockade-dominated transport in gold nanocluster structuresL Clarke / M N Wybourne / L O Brown / J E Hutchison / M Yan / S X Cai / J F W Keana et al. | 1998
- A115
-
Single-electron tunnelling transistor in SiGe/Si double-barrier structuresChomsik Lee et al. | 1998
- A119
-
Ångström-level, real-time control of the formation of quantum devicesS-B Carlsson / K Deppert / T Junno / M H Magnusson / L Montelius / L Samuelson et al. | 1998
- A124
-
Coulomb blockade oscillation in a single atomic junctionF Yamaguchi / D H Huang / Y Yamamoto et al. | 1998
- A127
-
Single-photon turnstile device: simultaneous Coulomb blockade for electrons and holesJ Kim / O Benson / H Kan / Y Yamamoto et al. | 1998
- A130
-
Experimental demonstration of quantum-dot cellular automataG L Snider / A O Orlov / I Amlani / G H Bernstein / C S Lent / J L Merz / W Porod et al. | 1998
- A135
-
On the validity of quantum hydrodynamics for describing antidot array devicesJ R Barker / D K Ferry et al. | 1998
- A140
-
High electron mobility in strained Si channel of heterostructure with abrupt interfaceN Sugii / K Nakagawa / Y Kimura / S Yamaguchi / M Miyao et al. | 1998
- A140
-
High electron mobility in strained Si channel of Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) heterostructure with abrupt interfaceSugi, N. / Nakagawa, K. / Kimura, Y. / Yamaguchi, S. / Miyao, M. et al. | 1998
- A143
-
Interface effects on intersubband carrier relaxation in GaAs/AlGaAs quantum wellsM Dür / S M Goodnick et al. | 1998
- A147
-
Electron-interface phonon interaction in multiple quantum well structuresJ P Sun / H B Teng / G I Haddad / M A Stroscio et al. | 1998
- A152
-
High dopant and carrier concentration effects in gallium aluminium arsenide: band structure, effective carrier concentrations and mobilitiesH S Bennett et al. | 1998
- A155
-
Experimental and theoretical study of ultra-thin oxidesE S Daniel / D Z-Y Ting / T C McGill et al. | 1998
- A160
-
Electrically programmable resistor on semi-insulating GaAsJun Shen et al. | 1998
- A163
-
Interface roughness and polar optical phonon scattering in In(0.53)Ga(0.47)As/AlAs/InAs RTDsLake, R. / Klimeck, G. / Blanks, D. et al. | 1998
- A163
-
Interface roughness and polar optical phonon scattering in RTDsR Lake / G Klimeck / D Blanks et al. | 1998
- A165
-
Numerical approximations to the treatment of interface roughness scattering in resonant tunnelling diodesG Klimeck / R Lake / D K Blanks et al. | 1998
- A169
-
Butt-coupling loss of 0.1 dB/interface in InP/InGaAs multiple-quantum-well waveguide-waveguide structures grown by selective area chemical beam epitaxyC A Verschuren / P J Harmsma / Y S Oei / M R Leys / H Vonk / J H Wolter et al. | 1998
- A173
-
Mesh-based particle simulation of sub-0.1 micron FETsC Arokianathan / A Asenov / J Davies et al. | 1998
- A177
-
Cellular automata simulation of nanometre-scale MOSFETsM Saraniti / G Zandler / G Formicone / S Wigger / S Goodnick et al. | 1998
- A180
-
Double electron layer tunnelling transistor (DELTT)M A Blount / J A Simmons / J S Moon / W E Baca / J L Reno / M J Hafich et al. | 1998