Optical dephasing in CdSSe mixed crystals studied by coherent transient grating experiments (Englisch)
- Neue Suche nach: Noll, G.
- Neue Suche nach: Siegner, U.
- Neue Suche nach: Gobel, E.O.
- Neue Suche nach: Schwab, H.
- Neue Suche nach: Renner, R.
- Neue Suche nach: Klingshirn, C.
- Neue Suche nach: Noll, G.
- Neue Suche nach: Siegner, U.
- Neue Suche nach: Gobel, E.O.
- Neue Suche nach: Schwab, H.
- Neue Suche nach: Renner, R.
- Neue Suche nach: Klingshirn, C.
In:
Fourth International Conference on II-VI Compounds, 17-22 Sept. 1989, Berlin, West Germany
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731-733
;
1990
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Optical dephasing in CdSSe mixed crystals studied by coherent transient grating experiments
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Weitere Titelangaben:Durch Experimente mit kohärenten Transientengittern untersuchte optische Phasenverschiebung in CdSSe-Mischkristallen
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Beteiligte:Noll, G. ( Autor:in ) / Siegner, U. ( Autor:in ) / Gobel, E.O. ( Autor:in ) / Schwab, H. ( Autor:in ) / Renner, R. ( Autor:in ) / Klingshirn, C. ( Autor:in )
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Erschienen in:Fourth International Conference on II-VI Compounds, 17-22 Sept. 1989, Berlin, West Germany ; 731-733Journal of Crystal Growth ; 101, 1-4 ; 731-733
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Verlag:
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Erscheinungsdatum:1990
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Format / Umfang:3 Seiten, 7 Quellen
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:EXPERIMENTELLES ERGEBNIS , BEUGUNGSGITTER (OPTIK) , PHASENVERSCHIEBUNG , MISCHKRISTALL , KOHAERENTE STRAHLUNG , EXCITON , ZWEI-SECHS-VERBINDUNG , SELENID , SELEN , SCHWEFEL , CADMIUM , CADMIUMVERBINDUNG , TRANSIENTER ZUSTAND , CADMIUMSULFID , CADMIUMSELENID , NICHTLINEARE OPTIK , HALBLEITERMISCHER , FREQUENZUMSETZUNG , ZEITAUFLOESUNG
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Datenquelle:
Inhaltsverzeichnis – Band 101, Ausgabe 1-4
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- 1
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MOVPE of narrow and wide gap II–VI compoundsMullin, J.B. / Cole-Hamilton, D.J. / Irvine, S.J.C. / Hails, J.E. / Giess, J. / Gough, J.S. et al. | 1989
- 14
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Wide-gap II–VI heterostructuresGunshor, R.L. / Nurmikko, A.V. / Kolodziejski, L.A. / Kobayashi, M. / Otsuka, N. et al. | 1989
- 23
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Modulation-doped HgCdTe quantum well structures and superlattices grown by photoassisted molecular beam epitaxySchetzina, J.F. / Han, J.W. / Lansari, Y. / Giles, N.C. / Yang, Z. / Hwang, S. / Cook, J.W. Jr. / Otsuka, N. et al. | 1989
- 33
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Photoassisted molecular beam epitaxy of wide gap II–VI heterostructuresBicknell-Tassius, R.N. / Waag, A. / Wu, Y.S. / Kuhn, T.A. / Ossau, W. et al. | 1989
- 42
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In situ characterization of organometallic growth of ZnSe using grazing incidence X-ray scatteringKisker, D.W. / Fuoss, P.H. / Brennan, S. / Renaud, G. / Tokuda, K.L. / Kahn, J.L. et al. | 1989
- 48
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Luminescence and electrical properties of ZnSe grown by photo-assisted OMVPEFujita, Shizuo / Tanabe, Akira / Kinoshita, Tetsuro / Fujita, Shigeo et al. | 1989
- 52
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Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxyKitagawa, M. / Tomomura, Y. / Nakanishi, K. / Suzuki, A. / Nakajima, S. et al. | 1989
- 56
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An RBS and chanelling study of epitaxial layers of CdxHg1-xTeAvery, A.J. / Diskett, D.J. / Giess, J. / Irvine, S.J.C. et al. | 1989
- 61
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Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameterMatsumura, Nobuo / Fukada, Takashi / Saraie, Junji et al. | 1989
- 67
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Photoluminescence spectroscopy of CdTe grown by photoassisted MBEGiles, N.C. / Bowers, K.A. / Harper, R.L. Jr. / Hwang, S. / Schetzina, J.F. et al. | 1989
- 73
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MOVPE growth and characterization of Hg0.7Cd0.3Te layersDruilhe, R. / Desjonquéres, F. / Katty, A. / Tromson-Carli, A. / Lorans, D. / Svob, L. / Heurtel, A. / Marfaing, Y. / Triboulet, R. et al. | 1989
- 78
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Surface reconstruction and stabilization in MOMBE of ZnSe revealed by in-situ RHEED monitoringFujita, Shizuo / Yoshimura, Naomichi / Wu, Yi-Hong / Fujita, Shigeo et al. | 1989
- 81
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Optical properties of ZnSeZnTe strained layer superlattices prepared by atomic layer epitaxyTakemura, Yasushi / Dosho, Shiro / Konagai, Makoto / Takahashi, Kiyoshi et al. | 1989
- 86
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“MBE-Like” and “CVD-like” atomic layer epitaxy of ZnSe in mombe systemYoshikawa, A. / Okamoto, T. / Yasuda, H. / Yamaga, S. / Kasai, H. et al. | 1989
- 91
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Monolayer epitaxy of ZnSe On GaAs substrates by alternating adsorption of diethylzinc and hydrogenselenideShibata, Noriyoshi / Katsui, Akinori et al. | 1989
- 96
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HgTe/HgCdTe superlattices: Growth, electrical and optical propertiesWu, Owen K. / Schulman, J.N. / Kamath, G.S. et al. | 1989
- 100
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ZnTe and CdTe:ZnTe superlattices grown by MOVPEMullins, J.T. / Clifton, P.A. / Brown, P.D. / Brinkman, A.W. / Woods, J. et al. | 1989
- 105
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Pulsed laser evaporation and epitaxy of Cd 1−x Mn x TeDubowski, J.J. et al. | 1989
- 111
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Effect of operating conditions and precursors on optoelectronic properties of OMVPE grown ZnSeGiapis, Konstantinos P. / Jensen, Klavs F. et al. | 1989
- 118
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ZnTeZnS strained-layer superlattices grown by ALE and MBE: Effects of strain on ZnTe incorporationKarasawa, Takeshi / Ohkawa, Kazuhiro / Mitsuyu, Tsuneo et al. | 1989
- 122
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Simulation of GaAs/CdTe heteroepitaxial growthDjafari Rouhani, M. / Laroussi, M. / Amrani, A. / Estève, D. et al. | 1989
- 126
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(111) CdTe molecular beam epitaxy growth on misoriented (001) GaAs substrateTatarenko, S. / Cibert, J. / Gobil, Y. / Feuillet, G. / Ligeon, E. / Dang, Le Si / Saminadayar, K. et al. | 1989
- 131
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Twin-free (Cd, Mn)Te substratesTriboulet, R. / Heurtel, A. / Rioux, J. et al. | 1989
- 135
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Linear and quadratic Zeeman effects on PAMBE grown CdTeOssau, W. / Kuhn, T.A. / Bicknell-Tassius, R.N. et al. | 1989
- 135
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Linear and quadratic Zeeman effects of PAMBE grown CdTeOssau, W. / Kuhn, T.A. / Bicknell-Tassius, R.N. et al. | 1990
- 141
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Growth and characterization of p-type VPE ZnS layersIida, S. / Yatabe, T. / Kinto, H. / Shinohara, M. et al. | 1989
- 147
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MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSeHe, Li / Zhong, Jianguo / Li, Jie / Lu, Jian / Pong, Zhonglin / Yu, Meifang / Yu, Jinbi / Xie, Qinxi / Yuan, Shixin et al. | 1989
- 153
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Characterisation of epitaxial CdxHg1−xTe using electrolyte electroreflectance with in-situ electrochemical etchingBerlouis, L.E.A. / Peter, L.M. / Diskett, D.J. / Avery, A.J. / Astles, M.G. / Giess, J. / Gordon, N.T. et al. | 1989
- 157
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Electrical and structural assessment of CdTe and CdMnTe layers grown by MBE on InSb structuresAshenford, D.E. / Hogg, J.H.C. / Johnston, D. / Lunn, B. / Scott, C.G. / Staudte, D. et al. | 1990
- 157
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Electrical and structural assessment of CdTe and CdMnTe layers grown by MBE on InSb substratesAshenford, D.E. / Hogg, J.H.C. / Johnston, D. / Lunn, B. / Scott, C.G. / Staudte, D. et al. | 1989
- 162
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Current transport mechanisms in epitaxial CdS/CdTe heterojunctionsErcelebi, C. / Brinkman, A.W. / Furlong, T.S. / Woods, J. et al. | 1989
- 167
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Effect of substrate orientation on crystalline microstructure of HgTe, CdTe AND HgCdTeCinader, G. / Raizman, A. / Oron, M. et al. | 1989
- 171
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Laser-induced MOCVD of ZnO thin filmsShimizu, Masaru / Katayama, Takuma / Tanaka, Yukio / Shiosaki, Tadashi / Kawabata, Akira et al. | 1989
- 176
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Growth of MBE ZnSxSe1−x using a novel electrochemical sulphur sourcePrior, K.A. / Wallace, J.M. / Hunter, J.J. / Adams, S.J.A. / Haines, M.J.L.S. / Saoudi, M. / Cavenett, B.C. et al. | 1989
- 180
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Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxyHingerl, K. / Sitter, H. / As, D.J. / Rothemund, W. et al. | 1989
- 185
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Characterization of CdS epitaxial films by high energy reflected electronsDe Blasi, C. / Mancini, A.M. / Manno, D. / Vasanelli, L. et al. | 1989
- 190
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Bulk-like low-temperature photoluminescence from CdTe/GaAs grown by hot-wall epitaxySchmidt, T. / Sitter, H. / Lischka, K. et al. | 1989
- 195
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Structural and optical properties of Cd0.7Hg0.3Te-CdTe heterostructures grown by molecular beam epitaxyLentz, G. / Magnea, N. / Mariette, H. / Tuffigo, H. / Feuillet, G. / Fontenille, J. / Ligeon, E. / Saminadayar, K. et al. | 1989
- 199
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Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSbWagner, H.P. / Kuhn, W. / Gebhardt, W. et al. | 1989
- 204
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MOVPE of high quality ZnSe: Role of mismatch on reflectivity and photoconductivityAulombard, R.L. / Averous, M. / Briot, O. / Calas, J. / Coquillat, D. / Hamdani, F. / Lascaray, J.P. / Moulin, N. / Tempier, N. et al. | 1989
- 208
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Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloysPain, G.N. / Bharatula, N. / Christiansz, G.I. / Kibel, M.H. / Kwietniak, M.S. / Sandford, C. / Warminski, T. / Dickson, R.S. / Rowe, R.S. / McGregor, K. et al. | 1989
- 211
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The absolute determination of CdTe crystal polarityBrown, P.D. / Durose, K. / Russell, G.J. / Woods, J. et al. | 1989
- 216
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“Cold travelling heater method”, a novel technique of synthesis, purification and growth of CdTe and ZnTeTriboulet, R. / Pham Van, Khoan / Didier, G. et al. | 1989
- 221
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Growth and characterization of CdS crystalsSu, Ching-Hua / Lehoczky, S.L. / Szofran, F.R. et al. | 1989
- 226
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Characterization of CdTe crystals by chemical etching and cathodoluminescence measurementsBrandt, G. / Ennen, H. / Moritz, R. / Rothemund, W. et al. | 1989
- 232
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Structural perfection of Hg1−xCdxTe Grown by THMGenzel, C. / Gille, P. / Hähnert, I. / Kiessling, F.M. / Rudolph, P. et al. | 1989
- 237
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X-ray absorption spectroscopy of CdMnTeKisiel, A. / Oleszkiewicz, J. / Podgórny, M. / Dalba, G. / Rocca, F. / Burattini, E. et al. | 1989
- 241
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Study of p-to-n-type conversion in bulk Hg1-xZnxTe near x = 0.15Granger, R. / Lasbley, A. / Seyni, A. / Rolland, S. / Triboulet, R. et al. | 1989
- 246
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Twinning in CdTeDurose, K. / Russell, G.J. et al. | 1989
- 251
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New defect etchants for CdTe and Hg1-xCdxTeHähnert, I. / Schenk, M. et al. | 1989
- 256
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Crystalline perfection of melt-grown CdTeAzoulay, M. / Raizman, A. / Gafni, G. / Roth, M. et al. | 1989
- 261
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Interdiffusion coefficient in Hg1-xZnxTe solid solutionsGranger, R. / Pobla, C. / Rolland, S. / Triboulet, R. et al. | 1989
- 266
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Vertical Bridgman growth of Cd1−yZnyTe and characterization of substrates for use in Hg1−xCdxTe liquids phase epitaxyBruder, M. / Schwarz, H.-J. / Schmitt, R. / Maier, H. / Möller, M.-O. et al. | 1989
- 266
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Vertical Bridgman growth of Cd1-yZnyTe and characterization of substrates for use in Hg1-xCdxTe liquid phase epitaxyBruder, M. / Schwarz, H.J. / Schmitt, R. / Maier, H. / Moller, M.O. et al. | 1990
- 270
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Cdte and CdZnTe crystal growth by horizontal bridgman techniqueCheuvart, P. / El-Hanani, U. / Schneider, D. / Triboulet, R. et al. | 1989
- 275
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Crystalline and chemical quality of CdTe and Cd1-xZnxTe grown by the Bridgman method in low temperature gradientsMühlberg, M. / Rudolph, P. / Genzel, C. / Wermke, B. / Becker, U. et al. | 1989
- 281
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Heat treatment of HgCdTe with CdHg sourceJianrong, Yang / Zhenzhong, Yu / Jiming, Liu / Dingyuan, Tang et al. | 1989
- 285
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Point defect formation in II–VI semiconductors at pulsed laser irradiationKorsunskaya, N.E. / Markevich, I.V. / Sheinkman, M.K. et al. | 1989
- 289
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p-type doping by ion implantation into ZnSe epitaxial layers grown by metalorganic vapor phase epitaxyYodo, Tokuo / Ueda, Kazuhiro / Yamashita, Ken et al. | 1989
- 294
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Identification of Na acceptor in MOCVD-grown ZnS films and the effect of UV light illuminationTaguchi, Tsunemasa / Kawazu, Zempei / Ohno, Tetsuichiro / Sawada, Akihiro et al. | 1989
- 300
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Extrinsic doping at low concentrations for CDxHg1-xTe layers grown by MOVPEMaxey, C.D. / Capper, P. / Whiffin, P.A.C. / Easton, B.C. / Gale, I. / Clegg, J.B. / Harker, A. / Jones, C.L. et al. | 1989
- 305
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Use of dimethyl hydrazine as a new acceptor-dopant source in metalorganic vapor phase epitaxy of ZnSeYoshikawa, A. / Matsumoto, S. / Yamaga, S. / Kasai, H. et al. | 1989
- 311
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Ag and Cu deposits on HgXTe (X=Cd, Zn) alloysVan Huong, C.Nguyen / Triboulet, R. / Lemasson, P. et al. | 1989
- 318
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Band structure and heterojunctions of II–VI materialsChristensen, N.E. / Gorczyca, I. / Christensen, O.B. / Schmid, U. / Cardona, M. et al. | 1989
- 332
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Tight-binding calculations of total energies of macroscopic polar electron-core systems: Application to II–VI compoundsNeugebauer, J. / Enderlein, R. / Röseler, J. et al. | 1989
- 337
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Spin splitting in narrow-gap two-dimensional electron systemsSobkowicz, P. et al. | 1989
- 341
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Theory of the dynamical stark effect of excitons in CdSZimmermann, R. / Hartmann, M. et al. | 1989
- 346
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Theory of exciton linewidth in II–VI semiconductor mixed crystalsZimmermann, R. et al. | 1989
- 350
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Tunneling current calculated for Hg0.8Cd0.2Te diodesSchenk, A. / Stahl, M. / Wünsche, H.-J. et al. | 1989
- 355
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Tight binding theory for deep-level native point defects in Hg1-xCdxTeHennig, D. / Hanke, M. / Kaschte, A. et al. | 1989
- 359
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Band structure and discontinuities of HgTe/CdTe superlattices: A theoretical studyRitze, M. / Enderlein, R. et al. | 1989
- 364
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Valence band structure of Cd0.7Hg0.3Te determined by angular resolved photoemissionLeveque, G. / Orsal, B. / Alabedra, R. / Flachet, J.C. et al. | 1989
- 368
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Ligand-field theory for the orbit-lattice and spin-lattice coupling coefficients of Mn2+ in ZnS and ZnSeBoulanger, D. / Parrot, R. et al. | 1989
- 372
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Calculation of band offsets in strained II–VI heterojunctionsBertho, D. / Simon, A. / Boiron, D. / Jouanin, C. / Priester, C. et al. | 1989
- 376
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Geometry optimization of Zn 1−x Mn x S structures by SCF CNDO and INDO methodsStavrev, K.K. / Kynev, K.D. / Nikolov, G.St. et al. | 1989
- 379
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Energy transfer between electromagnetic modes near the isotropic point in CdSCzajkowski, G. / Pantke, K.-H. / Ziebegk, K. / Schillak, P. et al. | 1989
- 385
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Jahn-teller effect and zero-phonon line isotope shifts of transition metals in II–VI compoundsHoffmann, A. / Scherz, U. et al. | 1989
- 393
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Rare earths in II–VI compounds: Non-linear optical excitation processes at low and high doping levelsHommel, D. / Busse, W. / Gumlich, H.-E. / Suisky, D. / Röseler, J. / Swiatek, K. / Godlewski, M. et al. | 1989
- 404
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Characterization of deep levels in CdTe by photo-EPR and related techniquesJantsch, W. / Hendorfer, G. et al. | 1989
- 414
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Cr2+ (d4) infrared emission in CdS and CdSeGoetz, G. / Krost, A. / Schulz, H.-J. et al. | 1989
- 420
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Implantation effects on resonant Raman scattering in CdTe and Cd0.23Hg0.77TeRamsteiner, M. / Lusson, A. / Wagner, J. / Koidl, P. / Bruder, M. et al. | 1989
- 425
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p-Doping of epitaxial ZnSe using group I elementsPotts, J.E. / Cheng, H. / DePuydt, J.M. / Haase, M.A. et al. | 1989
- 430
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Photoluminescence and annealing behavior of Ga-doped CdTe crystalsSeto, S. / Tanaka, A. / Suzuki, K. / Kawashima, M. et al. | 1989
- 435
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Deep Rare Earth (RE) ions related energy levels in ZnSŚwia̧tek, K. / Suchocki, A. / Przybylińska, H. / Godlewski, M. et al. | 1989
- 439
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Deuteration effects in chlorine-doped CdTeSvob, L. / Heurtel, A. / Marfaing, Y. et al. | 1989
- 443
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Excited State Absorption (ESA) of Mn in ZnS and ZnSeDreyhsig, J. / Stutenbäumer, U. / Gumlich, H.-E. / Allen, J.W. et al. | 1989
- 449
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The influence of high temperature annealing on luminescence and energy transfer in ZnS / Mn crystalsGrasser, R. / Scharmann, A. / Seidel, B. et al. | 1989
- 454
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Deep centers in S+ implanted ZnSeRen, Weihong / Yang, Xizhen / Fan, Xiwu et al. | 1989
- 458
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5d transition and 4f rare earth elements in II–VI semiconductors as luminescent centres and probes in diagnostics of implanted layersUshakov, V.V. / Gippius, A.A. et al. | 1989
- 462
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Luminescent properties of CaS phosphors activated by copper and flourineNakanishi, Yoichiro / Natsume, Kazumasa / Fukuda, Yasuo / Shimaoka, Goro / Tatsuoka, Hirokazu / Kuwabara, Hiroshi / Nakazawa, Eiichiro et al. | 1989
- 466
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Optical investigation of Ni impurity in ZnSe under hydrostatic pressureWasik, D. / Liro, Z. / Baj, M. et al. | 1989
- 470
-
Jahn-Teller effect for CdS:Fe2+ and CdSe:Fe2+Vogel, Eugenio E. / de Orúe, Manuel A. / Rivera-Iratchet, Juan / Morales, Juan E. et al. | 1989
- 474
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Middle infrared photoluminescence mapping of II–VI semiconductor wafersSchmidt, H. / Tomm, J.W. / Herrmann, K.H. et al. | 1989
- 479
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The behavior of phosphorus implanted CdTeSun, C.Y. / Hsu, Y.J. / Hwang, H.L. et al. | 1989
- 484
-
Investigation of the Mn2+ → Mn2+ energy transfer using time-resolved ODMRZink, K. / Nelkowski, H. / Sahm, J. et al. | 1989
- 488
-
Excited states of acceptors in CdTe and ZnTeSaid, M. / Kanehisa, M.A. et al. | 1989
- 493
-
Observation by 57Fe Mossbauer spectroscopy of iron as electron traps and of the relaxation of these transient states in ZnTe and ZnSGérard, A. / Garcin, C. / Imbert, P. et al. | 1989
- 497
-
Optical and electrical properties of heavily indium-doped CdS around the semiconductor-metal phase transitionBroser, I. / Broser, R. / Birkicht, E. et al. | 1989
- 502
-
A new 1.47 eV defect-luminescence band in MOCVD-grown CdTe on (100) GaAsOnodera, Chikara / Taguchi, Tsunemasa et al. | 1989
- 507
-
Investigations of the temperature dependent Fe2+(3d6) resonant donor level in HgSe:FeSzuszkiewicz, W. / Dingrong, Qian / Julien, C. / Jiaming, Zhang / Jez̊ewski, M. / Balkanski, M. / Mycielski, A. et al. | 1989
- 512
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Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilationKrause, R. / Klimakow, A. / Kiessling, F.M. / Polity, A. / Gille, P. / Schenk, M. et al. | 1989
- 517
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Photo-ESR characterization of donor and acceptor impurities in ZnSGodlewski, M. / Zakrzewski, A. et al. | 1989
- 521
-
Long range Mn Ion pairs and other Mn related centers in ZnS detected by site-selected spectroscopyPohl, U.W. / Gumlich, H.-E. et al. | 1989
- 525
-
Optical properties of oxygen-doped ZnSe crystalsKulakov, M.P. / Negriy, V.D. et al. | 1989
- 528
-
Many-electron multiplet effects in the spectra of Ni and Co in II–VI semiconductorsBouhelal, A. / Albert, J.P. et al. | 1989
- 532
-
Fine structure of the Cu2+ centre in CdSHoffmann, A. / Broser, I. / Thurian, P. / Heitz, R. et al. | 1989
- 536
-
Optical and optically detected magnetic resonance investigations on the A-center complex in CdTeHofmann, D.M. / Meyer, B.K. / Probst, U. / Benz, K.W. et al. | 1989
- 540
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Magneto-optics in II–VI compound type III superlatticesGuldner, Y. / Manassès, J. et al. | 1989
- 546
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Optoelectronic properties of ZnSeGaAs interfaces: Role of interface chemistry and structural defectsOlego, D.J. / Cammack, D. et al. | 1989
- 550
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Effects of electric field on ZnSe/ZnS strained-layer superlatticesYokogawa, Toshiya / Saitoh, Tohru / Narusawa, Tadashi et al. | 1989
- 554
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Photoluminescence of wide bandgap II–VI superlatticesO'Donnell, K.P. / Parbrook, P.J. / Henderson, B. / Trager-Cowan, C. / Chen, X. / Yang, F. / Halsall, M.P. / Wright, P.J. / Cockayne, B. et al. | 1989
- 559
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Electronic structure, effective masses and non-linear optical response in Hg1-xCdxTe-Hg1-yCdyTe and Hg1-xCdxTe-Cd1-yZnyTe superlatticesJaros, M. / Zoryk, A. / Beavis, A.W. / Morrison, I. et al. | 1989
- 566
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Mis structures on Hg 1-x Cd x Te/CdTe/GaAs epilayersLang, M. / Lischka, K. et al. | 1989
- 572
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High resolution X-ray diffraction studies of CdxHg1-xTe/CdTe epitaxial layers grown by MOVPE on GaAs substratesKeir, A.M. / Graham, A. / Barnett, S.J. / Giess, J. / Astles, M.G. / Irvine, S.J.C. et al. | 1989
- 579
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Surface radiative recombination in CdS CrystalsTravnikov, V.V. et al. | 1989
- 584
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Effect of deposition temperature on the electrical properties of p-type Hg0.8Cd0.2TeZnS interfaceEsquivias, I. / Linares, E. / Iborra, E. / Sangrador, J. et al. | 1989
- 589
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Investigation of the CdTe/GaAs interface by the x-ray rocking curve methodPesek, A. / Ryan, T.W. / Sasshofer, R. / Fantner, E.J. / Lischka, K. et al. | 1989
- 594
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Spectroscopic determination of the band offset in CdTe/Cd1-xMnxTe multiple quantum wells grown on InSb substratesGregory, T.J. / Hilton, C.P. / Nicholls, J.E. / Hagston, W.E. / Davies, J.J. / Lunn, B. / Ashenford, D.E. et al. | 1989
- 599
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Photoluminescence as a probe of semiconductor surfaces: CdTe and CdSSobiesierski, Z. / Dharmadasa, I.M. / Williams, R.H. et al. | 1989
- 603
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Deformation potentials of CdTe epilayers from piezo and wavelength modulation reflectivity spectra analysisAllègre, J. / Gil, B. / Calatayud, J. / Mathieu, H. et al. | 1989
- 608
-
XPS study of the ZnxHg1−xTe alloys: Core levels and valence-band offsetMarbeuf, A. / Ballutaud, D. / Triboulet, R. / Marfaing, Y. et al. | 1989
- 611
-
Cyclotron resonance excitation spectroscopy of CdTe and of CdTe/CdZnTe quantum wellsLavigne, B. / Cox, R.T. et al. | 1989
- 616
-
Spectroscopic evidence for piezoelectric effects in wurtzite CdS/CdSe strained-layer superlatticesHalsall, M.P. / Nicholls, J.E. / Davies, J.J. / Wright, P.J. / Cockayne, B. et al. | 1989
- 620
-
Valence band offset and interface chemistry of II–VI epitaxial layers grown on the (110) surface of III–V materialsWilke, W.G. / Seedorf, R. / Horn, K. et al. | 1989
- 628
-
Spectroscopy in CdTe/MnTe and ZnTe/MnTe single quantum wells; new binary wide gap II–VI heterostructuresPelekanos, N. / Fu, Q. / Nurmikko, A.V. / Durbin, S. / Han, J. / Sungki, O. / Menke, D. / Kobayashi, M. / Gunshor, R.L. et al. | 1989
- 632
-
Nonlinear optical properties of wide-gap II–VI bulk semiconductors and microcrystallitesHenneberger, F. / Puls, J. / Rossmann, H. / Woggon, U. / Freundt, S. / Spiegelberg, Ch. / Schülzgen, A. et al. | 1989
- 643
-
Ultrafast optical nonlinearities in II–VI compoundsFluegel, B. / Joffre, M. / Park, S.H. / Morgan, R. / Hu, Y.Z. / Lindberg, M. / Koch, S.W. / Hulin, D. / Migus, A. / Antonetti, A. et al. | 1989
- 650
-
Optical properties of CdTe/Cd 1-x Zn x Te quantum wells and superlatticesMerle d'Aubigné, Y. / Mariette, H. / Magnea, N. / Tuffigo, H. / Cox, R.T. / Lentz, G. / Dang, Le Si / Pautrat, J.-L. / Wasiela, A. et al. | 1989
- 661
-
Excitonic luminescence and the effect of high excitation in ZnSeZnS strained-layer superlattices grown on ZnS substratesYamada, Yoichi / Taguchi, Tsunemasa et al. | 1989
- 667
-
High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayersKudlek, G. / Presser, N. / Gutowski, J. / Durbin, S. / Menke, D. / Kobayashi, M. / Gunshor, R.L. et al. | 1989
- 673
-
Systematic photoluminescence study of CdxHg1−xTe alloys in a wide composition rangeLusson, A. / Fuchs, F. / Marfaing, Y. et al. | 1989
- 678
-
Picosecond transient gratings in CdS 1−x Se x mixed crystalsDörnfeld, C. / Noll, G. / Schwab, H. / Hvam, J.M. / Weber, Ch. / Renner, R. / Göbel, E.O. / Reznitsky, A. / Lyssenko, V. / Pendjur, S.A. et al. | 1989
- 683
-
Dynamics of free exciton luminescence in CdxZn1-xTe/ZnTe quantum wellsStanley, R.P. / Hegarty, J. / Fischer, R. / Feldmann, J. / Göbel, E.O. / Feldman, R.D. / Austin, R.F. et al. | 1989
- 687
-
Dielectric properties of narrow-gap semiconductorsKumazaki, K. et al. | 1989
- 691
-
Mechanism of the temperature dependence of bound-exciton photoluminescence of CdTe crystalsZimmermann, H. / Boyn, R. / Michel, C. / Rudolph, P. et al. | 1989
- 695
-
Optically bistable thin film devices using wide-gap II–VI compoundsEichler, Hans J. / Glaw, Veronika / Kummrow, Andreas / Penschke, Volker / Wahi, Aseem et al. | 1989
- 699
-
Nonlinear spectroscopy of deep levels in wide-gap II–VI semiconductorsBaltramiejũnas, R. / Gavryushin, V. et al. | 1989
- 705
-
Optical study of ZnSe and (Zn,Mn)Se MBE layers on GaAsHeimbrodt, W. / Goede, O. / Köpp, Th. / Enderlein, R. / Pessa, M. / Lilja, J. et al. | 1989
- 709
-
Density of states model and photoluminescence spectra of localized excitons in ZnHgTe and CdHgTe alloysOuadjaout, D. / Marfaing, Y. / Lusson, A. / Heurtel, A. et al. | 1989
- 713
-
Exciton absorption in CdS1-xSex and ZnSe1-xTex solid solutionsNaumov, A. / Permogorov, S. / Reznitsky, A. / Verbin, S. / Klochikhin, A. et al. | 1989
- 718
-
Absolute absorption coefficients of ZnTe single crystal layers: Experiment and theoryLangen, B. / Leiderer, H. / Limmer, W. / Gebhardt, W. / Ruff, M. / Rössler, U. et al. | 1989
- 722
-
Fourier transform infrared photoluminescence of Hg1-xCdxTeFuchs, F. / Lusson, A. / Koidl, P. / Triboulet, R. et al. | 1989
- 727
-
Strain-induced splitting of free exciton band in epitaxially grown ZnSe on GaAsSaito, H. / Ohishi, M. / Watanabe, A. / Ohmori, K. et al. | 1989
- 731
-
Optical dephasing in CdSSe mixed crystals studied by coherent transient grating experimentsNoll, G. / Siegner, U. / Göbel, E.O. / Schwab, H. / Renner, R. / Klingshirn, C. et al. | 1989
- 734
-
The electron-hole plasma in cubic ZnTe and ZnSe crystalsKunz, M. / Pier, T. / Bhargava, R.N. / Reznitsky, A. / Kozlovskii, V.I. / Müller-Vogt, G. / Pfister, J.C. / Pautrat, J.L. / Klingshirn, C. et al. | 1989
- 739
-
Novel size effects in excitonic spectra of thin II–VI single crystalsMikhailov, G.V. / Panfilov, A.G. / Razbirin, B.S. et al. | 1989
- 743
-
Luminescence of heavily doped, highly excited CdS: In crystalsNeukirch, U. / Broser, I. / Rass, R. et al. | 1989
- 748
-
Frequency doubling and phase matching with II–VI microcrystalsColak, S. / Khurgin, J. et al. | 1989
- 754
-
Photopumped lasing in ZnSSe/ZnSe multilayer structures up to 210 KSuemune, I. / Masato, H. / Nakanishi, K. / Yamada, K. / Kan, Y. / Yamanishi, M. et al. | 1989
- 758
-
Thermally induced optical bistability in II–VI semiconductor crystals and thin filmsSchmidt, A. / Müller, M. / Grohs, J. / Kunz, M. / Daunois, A. / Kažukauskas, V. / Kar, A.K. / Bartelt, H. / Klingshirn, C. et al. | 1989
- 763
-
Optical characterization of ultra-high-purity Zinc Selenide epilayersShahzad, Khalid / Olego, Diego J. / Cammack, David A. et al. | 1989
- 767
-
Exciton transfer between localized states in CdS1-xSex alloys: Time-resolved photoluminescence and theoretical modelsGourdon, C. / Lavallard, P. et al. | 1989
- 773
-
Electron-hole plasma relaxation in CdTeCollet, J.H. / Rühle, W.W. / Pugnet, M. / Leo, K. / Million, A. et al. | 1989
- 778
-
Optical properties of excitons in II–VI quantum wells: Importance of centre-of-mass quantizationTuffigo, H. / Cox, R.T. / Lentz, G. / Magnea, N. / Mariette, H. et al. | 1989
- 783
-
Exciton states and LO-phonon resonant Raman scattering in CdTe/ZnTe superlatticesGarini, Y. / Cohen, E. / Ron, Arza / Shtrikman, Hadas et al. | 1989
- 787
-
Middle infrared photoluminescence (PL) in the Hg1-xCdxTe (0.22≤ x ≤ 0.75) systemWerner, L. / Tomm, J.W. / Tilgner, J. / Herrmann, K.H. et al. | 1989
- 792
-
Free-carrier absorption due to collective and one-particle processes in a linear conduction bandBardyszewski, W. / Szuszkiewicz, W. / Dingrong, Qian / Jiaming, Zhang et al. | 1989
- 797
-
Photoconduction and thermo-optical hysteresis measurements in thin CdS filmsBouchenaki, Ch. / Ullrich, B. / Zielinger, J.P. / Nguyen Cong, H. / Chartier, P. et al. | 1989
- 802
-
Fine structure of the excitonic absorption spectra and interband magneto-optics of CdTe crystalsAbdullaev, M.A. / Coschug, O.S. / Kokhanovskii, S.I. / Seisyan, R.P. et al. | 1989
- 808
-
Transport properties of II–VI semimagnetic semiconductorsDietl, Tomasz et al. | 1989
- 818
-
p-type carrier concentration control in lithium-doped zinc selenide grown by MOCVDMitsuhashi, H. / Yahata, A. / Uemoto, T. / Kamata, A. / Okajima, M. / Hirahara, K. / Beppu, T. et al. | 1989
- 822
-
Galvanomagnetic properties of p-CdTe and p-Hg1−xCdxTeHöschl, P. / Moravec, P. / Prosser, V. / Kžel, R. / Grill, R. / Franc, J. / Belas, E. / Ivanov, Yu.M. et al. | 1989
- 826
-
Picosecond photoconductivity of CdSe and CdTe thin filmsVaitkus, J. / Tomašũnas, R. / Kutra, J. / Petrauskas, M. / Rimkũnas, R. / Žindulis, A. et al. | 1989
- 828
-
Photo-hall model for space charge effects in n-ZnSe/GaAs:Cr heterostructuresColak, S. / van Houten, H. / Marshall, T. / Cammack, D.A. et al. | 1989
- 835
-
p-Type conduction of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxyMigita, Masahito / Taike, Akira / Shiiki, Masatoshi / Yamamoto, Hajime et al. | 1989
- 841
-
Deep levels governing the transport mechanism in p-n HgMnTe diodesDobaczewski, L. / Janik, E. / Karczewski, G. et al. | 1989
- 844
-
Hall mobility and conductivity in Zn x Cd 1-x S mixed crystalsSaidin, M.K.B. / Russell, G.J. / Brinkman, A.W. / Woods, J. et al. | 1989
- 850
-
Control of the resistivity of MOCVD zinc selenide by post-growth annealingZheng, Jiazhen / Allen, J.W. et al. | 1989
- 854
-
Influence of deep level intrinsic defects on the carrier transport in p-type Hg1-xCdxTeHoerstel, W. / Klimakow, A. / Kramer, R. et al. | 1989
- 859
-
Carrier drift mobilities and PL spectra of high resistivity Cadmium TellurideSuzuki, K. / Seto, S. / Tanaka, A. / Kawashima, M. et al. | 1989
- 864
-
Electrical properties of Hg1−xCdxTe (x = 0.21) annealed by immersion in a hot mercury bathUzan-Saguy, C. / Laser, D. / Kalish, R. et al. | 1989
- 869
-
Shubnikov-de haas effect under hydrostatic pressure in HgSe:FeSkierbiszewski, C. / Suski, T. / Dobrowolski, W. / Kossut, J. et al. | 1989
- 872
-
Resistivity and high magnetic field hall effect measurements on as-grown p-type HgZnTeFajardo, P. / Sanz-Maudes, J. / Rodriguez, T. / González, M.A. / Triboulet, R. et al. | 1989
- 876
-
Ballistic transport in alkaline earth sulfidesFitting, H.-J. / von Czarnowski, A. / Müller, G.O. et al. | 1989
- 882
-
Free and bound exciton in II-VI semimagnetic compoundsGubarev, S.I. et al. | 1989
- 890
-
Holes in semimagnetic semiconductorsGelmont, B.L. et al. | 1989
- 895
-
Resonant Raman scattering by LO phonons in Cd0.8Mn0.2Te near the E0 gap in external magnetic fieldsLimmer, W. / Bauer, S. / Gebhardt, W. et al. | 1989
- 900
-
Anti-crossing of Raman lines: bound magnetic polaron in Cd1−xFexSeScalbert, D. / Gaj, J.A. / Mauger, A. / Cernogora, J. / Benoit àla Guillaume, C. et al. | 1989
- 905
-
Magneto-excitons in CdTe(CdMn)Te quantum wellsOssau, W. / Fischer, S. / Bicknell-Tassius, R.N. et al. | 1989
- 911
-
Optical study of the antiferromagnetic phase transition in (Cd,Mn)S at highest Mn concentrationHeimbrodt, W. / Benecke, C. / Goede, O. / Gumlich, H.-E. et al. | 1989
- 916
-
Resonant photoelectron spectroscopy on ZnMnS at the Mn 3p-3d and Mn 2p-3d thresholdWeidemann, R. / Burmester, B. / Gumlich, H.-E. / Jung, Ch. / Kleemann, T. / Kreitler, T. / Krost, A. / Middelmann, H.-U. / Becker, U. / Kupsch, M. et al. | 1989
- 921
-
Resonant Raman scattering by optical phonons in ZnSe and Zn0.97Mn0.03Se near the E0 gapLeiderer, H. / Limmer, W. / Gebhardt, W. et al. | 1989
- 926
-
Investigations on the cation d-levels of wide gap semimagnetic semiconductorsJung, Ch. / Gumlich, H.-E. / Knack, A. / Mertins, H.-C. et al. | 1989
- 931
-
Chemical trends of the luminescence in wide band gap II1−xMnxVI semimagnetic semiconductorsBenecke, C. / Busse, W. / Gumlich, H.-E. et al. | 1989
- 936
-
Nearest and next nearest neighbor exchange interaction between magnetic ions in II–VI semimagnetic semiconductorsBruno, A. / Lascaray, J.P. et al. | 1989
- 940
-
Resonant Raman scattering on low energy excited states of Fe2+ in Cd1−xFexSeScalbert, D. / Gaj, J.A. / Mauger, A. / Cernogora, J. / Benoit ÁLa Guillaume, C. / Mycielski, A. et al. | 1989
- 944
-
Blue spontaneous and stimulated emission in VPE ZnSe epilayersFan, X.W. / Tang, Z.K. / Tian, H. et al. | 1989
- 953
-
Conductivity control of ZnSe grown by MOVPE and its application for blue electroluminescenceKukimoto, Hiroshi et al. | 1989
- 958
-
Thin-film electroluminescent devices using CaS and SrSTanaka, Shosaku et al. | 1989
- 967
-
Ballistic transport and electroluminescence in IIB–VI and IIA–VI compoundsMach, R. / Müller, G.O. et al. | 1989
- 976
-
Thin film electroluminescence of Zn1−xMnxS1−yTeyBenalloul, P. / Benoit, J. / Geoffroy, A. / Yebdri, D. / Bilewicz, R. / Busse, W. / Gumlich, H.-E. / Rebentisch, R. et al. | 1989
- 981
-
Electroluminescence from minority carrier injection produced by deep-level impact-ionisationThompson, T.D. / Allen, J.W. et al. | 1989
- 985
-
Magnetic effects in electroluminescence of ZnS:Mn filmsBelyaev, A.E. / Kononetz, Ya.F. / Semenov, Yu.G. / Vlasenko, N.A. et al. | 1989
- 989
-
Decay of ZnS:Mn emission in thin films — revisitedBenalloul, P. / Benoit, J. / Mach, R. / Müller, G.O. / Reinsperger, G.U. et al. | 1989
- 994
-
Thin film electroluminescence of ZnS:Tb3+Khomchenko, V.S. / Kononec, Ya.F. / Vlasenko, N.A. / Mach, R. / Reinsperger, G.U. / Selle, B. / Reetz, R. et al. | 1989
- 999
-
Efficient ZnS-like alkaline earth sulfide electroluminescenceMüller, G.O. / Mach, R. / Selle, B. / Ohnishi, H. et al. | 1989
- 1004
-
Preliminary trial of third generation electroluminescence (EL)Xurong, Xu / Gang, Lei / Mengyan, Shen / Zhao, Guozhang et al. | 1989
- 1009
-
Injection luminescence in oxygen-doped ZnSe grown by molecular beam epitaxyAkimoto, Katsuhiro / Miyajima, Takao / Mori, Yoshifumi et al. | 1989
- 1013
-
Integration of a CdTe interdigitated photoconductor with AlGaAs field-effect transistorFilippozzi, J.L. / Therez, F. / Estève, D. / Fallahi, M. / Kendil, D. / Da Silva, M. / Barbe, M. / Cohen-Solal, G. et al. | 1989
- 1013
-
Integration of a CdTe interdigitated photoconductor with an AlGaAs field-effect transistorFilippozzi, J.L. / Therez, F. / Esteve, D. / Fallahi, M. / Kendil, D. / Da Silva, M. / Barbe, M. / Cohen-Solal, G. et al. | 1990
- 1018
-
Highly conductive Ga-doped polycrystalline (Zn,Cd)S filmsSchmid, D. / Mauch, R.H. / Hofmann, M. / Schäffler, R. / Schock, H.W. et al. | 1989
- 1022
-
Vibrations of constituent atoms in ZnxCd1−xTe and Hg1−xCdxTe (various x)Comedi, D. / Kalish, R. et al. | 1989
- 1027
-
Author index| 1989
- 1040
-
Subject index| 1989
- ix
-
Editors' preface| 1989
- viii
-
Editorial Board| 1989
- x
-
Opening session| 1989
- xiii
-
Concluding remarks at the closing sessionGumlich, H.-E. et al. | 1989