Preparation and characterization of amorphous SiC:H thin films (Englisch)
- Neue Suche nach: Delplancke, M.P.
- Neue Suche nach: Powers, J.M.
- Neue Suche nach: Vandentop, G.J.
- Neue Suche nach: Salmeron, M.
- Neue Suche nach: Somorjai, G.A.
- Neue Suche nach: Delplancke, M.P.
- Neue Suche nach: Powers, J.M.
- Neue Suche nach: Vandentop, G.J.
- Neue Suche nach: Salmeron, M.
- Neue Suche nach: Somorjai, G.A.
In:
37th National Symposium of the American Vacuum Society, 8-12 Oct. 1990, Toronto, Ont., Canada
;
450-455
;
1991
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Preparation and characterization of amorphous SiC:H thin films
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Weitere Titelangaben:Präparation und Charakterisierung von amorphen dünnen Si:H-Filmen
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Beteiligte:Delplancke, M.P. ( Autor:in ) / Powers, J.M. ( Autor:in ) / Vandentop, G.J. ( Autor:in ) / Salmeron, M. ( Autor:in ) / Somorjai, G.A. ( Autor:in )
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Erschienen in:37th National Symposium of the American Vacuum Society, 8-12 Oct. 1990, Toronto, Ont., Canada ; 450-455Journal of Vacuum Science and Technology, Part A (Vacuums, Surfaces, and Films) ; 9, 3, PT.1 ; 450-455
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Verlag:
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Erscheinungsdatum:1991
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Format / Umfang:6 Seiten, 7 Quellen
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 9, Ausgabe 3, PT.1
Zeige alle Jahrgänge und Ausgaben
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Characterization of electronic and optical properties of device quality a-Si:H and a-(Si,Ge):H grown by remote plasma electron cyclotron resonance depositionKnox, R.D. / Dalal, V.L. / Popov, O.A. et al. | 1991
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Modeling bias sputter planarization of metal films using a ballistic deposition simulationDew, S.K. / Smy, T. / Tait, R.N. / Brett, M.J. et al. | 1991
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A fundamental feature scale model for low pressure deposition processesCale, T.S. / Gandy, T.H. / Raupp, G.B. et al. | 1991
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Annealing response of disordered sputter deposited vanadium pentoxide (V2O5)Luksich, J. / Rubin Aita, C. et al. | 1991
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Electron emission characteristics of sputtered lanthanum hexaborideMroczkowski, S.J. et al. | 1991
- 591
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Mass gain of thin films on exposure to airGraper, E.B. et al. | 1991
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Microstructure of sputter-deposited Al-Cu-Si filmsShimamura, H. / Yajima, A. / Yoneoka, Y. / Kobayashi, S. et al. | 1991
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Monte Carlo simulations of magnetron sputtering particle transportMyers, A.M. / Doyle, J.R. / Abelson, J.R. / Ruzic, D.N. et al. | 1991
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Vibrational excitation processes in molecular dischargesO'Neill, J.A. et al. | 1991
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Energy distribution measurements in radio frequency plasma discharges using a cubical analyzerNguyen, P.L. / Turkot, R.B. jun. / Ruzic, D.N. et al. | 1991
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X-ray absorption fine structure studies of buried Ge-Si interfacesAebi, P. / Tyliszczak, T. / Hitchcock, A.P. / Jackman, T.E. / Baribeau, J.M. et al. | 1991
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X-ray characterization of (Zn,Cd)Te/CdTe strained layer superlatticesQadri, S.B. et al. | 1991
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Au interfaces with epitaxially grown CdTe(111): chemistry and barrier heightsVitomirov, I.M. / Chang, S. / Brillson, L.J. / Rioux, D.F. / Sivananthan, S. / Faurie, J.P. et al. | 1991
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Free energy model for the analysis of bonding in a-SixNyHz alloysYin, Z. / Smith, F.W. et al. | 1991
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Formation and Schottky barrier height of Au contacts to CuInSe2Nelson, A.J. / Gebhard, S. / Kazmerski, L.L. / Colavita, E. / Engelhardt, M. / Hochst, H. et al. | 1991
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Synchrotron-radiation-stimulated tungsten deposition on silicon from W(CO)6Zanoni, R. / Piancastelli, M.N. / Marsi, M. / Margaritondo, G. et al. | 1991
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Photoluminescence and surface photovoltaic spectra of strained InP on GaAsWeihua Zhuang / Chao Chen / Da Teng / Jin Yu / Yuzhang Li et al. | 1991
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Internal photoemission in CoGa/GaAs Schottky barriers, possible injection of electrons into the L valleyArghavani, R. / Karunasiri, R.P.G. / Kuo, T.C. / Kim, Y.K. / Wang, K.L. et al. | 1991
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Photoemission study of the annealed Pd/GaAs (110) interfaceKendelewicz, T. / Miyano, K.E. / Meissner, P.L. / Cao, R. / Spicer, W.E. et al. | 1991
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Studies on type-inversion of sulfide-treated p-InPLau, W.M. / Jin, S. / Wu, X.W. et al. | 1991
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Cerium silicide formation in thin Ce-Si multilayer filmsHsu, C.C. / Ho, J. / Qian, J.J. / Wang, Y.T. et al. | 1991
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The chemical vapor deposition of SiO2 from tetraethoxysilane: the effect of the surface hydroxyl concentrationTedder, L.L. / Crowell, J.E. / Logan, M.A. et al. | 1991
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Low-energy electron microscopy of semiconductor surfacesBauer, E. / Mundschau, M. / Swiech, W. / Telieps, W. et al. | 1991
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Scanning tunneling microscopy of one-dimensional periodic corrugated silicon surfacesUmbach, C.C. / Keeffe, M.E. / Blakely, J.M. et al. | 1991
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Silicon (2p) surface core-level line shape of Si(111)-BRowe, J.E. / Wertheim, G.K. / Riffe, D.M. et al. | 1991
- 1023
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Characterization of ion beam-induced surface modification of diamond films by real time spectroscopic ellipsometryYue Cong / Collins, R.W. / Messier, R. / Vedam, K. / Epps, G.F. / Windischmann, H. et al. | 1991
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Clean and oxygen covered InP(110) surfaces differential reflectivityCricenti, A. / Selci, S. / Felici, A.C. / Ferrari, L. / Gavrilovich, A. / Gioletti, C. / Chiarotti, G. et al. | 1991
- 1029
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The thermal oxidation of AlGaAsShin, J. / Geib, K.M. / Wilmsen, C.W. / Chu, P. / Wieder, H.H. et al. | 1991
- 1035
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Ion beam oxidation of GaAs: the role of ion energyVancauwenberghe, O. / Herbots, N. / Manoharan, H. / Ahrens, M. et al. | 1991
- 1040
-
GaAs surface oxidation and deoxidation using electron cyclotron resonance oxygen and hydrogen plasmasLu, Z. / Schmidt, M.T. / Osgood, R.M. jun. / Holber, W.M. / Podlesnik, D.V. et al. | 1991
- 1045
-
Surface mechanisms in aluminum chemical vapor depositionMantell, D.A. et al. | 1991
- 1051
-
Thin-film deposition in the afterglows of N2 and H2 microwave plasmasMeikle, S. / Nakanishi, Y. / Hatanaka, Y. et al. | 1991
- 1055
-
Plasma jet dry etching using different electrode configurationsBarklund, A.M. / Blom, H.O. / Berg, S. et al. | 1991
- 1058
-
Surface etching and roughening in integrated processing of thermal oxidesOffenberg, M. / Liehr, M. / Rubloff, G.W. et al. | 1991
- 1066
-
Process compatibility in integrated processing of semiconductor devices in multichamber systemsLucovsky, G. / Kim, S.S. / Fitch, J.T. / Cheng Wang / Rudder, R.A. / Fountain, G.G. / Hattangady, S.V. / Markunas, R.J. et al. | 1991
- 1073
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In situ native oxide clean followed by chemical vapor deposition of tungsten silicide on polysilicon in a cluster toolNowicki, R.S. / Geraghty, P. / Harris, D. / Lux, G. / Johnson, D.J. et al. | 1991
- 1083
-
Monte Carlo low pressure deposition profile simulationsRey, J.C. / Lie-Yea Cheng / McVittie, J.P. / Saraswat, K.C. et al. | 1991
- 1088
-
Helium plasma enhanced chemical vapor deposited oxides and nitrides: process mechanisms and applications in advanced device structuresBright, A.A. et al. | 1991
- 1094
-
Low-temperature (300 degrees C) stacked oxide-nitride-oxide gate dielectrics with remote plasma-enhanced chemical vapor depositionHattangady, S.V. / Fountain, G.G. / Alley, R.G. / Rudder, R.A. / Markunas, R.J. et al. | 1991
- 1099
-
Hot filament activated chemical vapor deposition of boron nitrideRye, R.R. et al. | 1991
- 1104
-
Stresses in multilayer combinations of sputter deposited coatings of Ni, Ti, TiC+Ni, and TiB2+Ni on carbon steel substratesChambers, D.L. / Taylor, K.A. / Wan, C.T. / Susi, G.T. et al. | 1991
- 1109
-
Process optimization and scale-up of a rapid thermal processing system using design of experimentsRastogi, R. et al. | 1991
- 1113
-
Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing controlBabic, D.I. / Dudley, J.J. / Shirazi, M. / Hu, E.L. / Bowers, J.E. et al. | 1991
- 1118
-
Large-area sputtering of in situ superconducting YBa2Cu3O7 filmsBallentine, P.H. / Allen, J.P. / Kadin, A.M. / Mallory, D.S. et al. | 1991
- 1129
-
The effect of radio frequency substrate biasing in the deposition of diamond-like carbon films in an electron cyclotron resonance dischargePastel, P.W. / Varhue, W.J. et al. | 1991
- 1134
-
Effect of oxygen on filament activity in diamond chemical vapor depositionSommer, M. / Smith, F.W. et al. | 1991
- 1140
-
X-ray absorption study of diamond films grown by chemical vapor depositionYang, X.Q. / Ruckman, M.W. / Skotheim, T.A. / Boer, M. den / Yu Zheng / Badzian, A.R. / Badzian, T. / Messier, R. / Srivatsa, A.R. et al. | 1991
- 1145
-
Current research problems and opportunities in the vapor phase synthesis of diamond and cubic boron nitrideYarbrough, W.A. et al. | 1991
- 1153
-
K-edge absorption analysis of hydrogenated diamond-like carbon filmsYaxin Wang / Hsiung Chen / Hoffman, R.W. et al. | 1991
- 1157
-
The effect of ion energy flux on the properties of hydrogenated amorphous carbon filmsVandentop, G.J. / Kawasaki, M. / Kobayashi, K. / Somorjai, G.A. et al. | 1991
- 1162
-
Effect of microstructure and hydrogen content on the characteristics of amorphous hydrogenated carbon protective coatingsKokaku, Y. / Kohno, M. / Fujimaki, S. / Kitoh, M. et al. | 1991
- 1166
-
Magnetic field and substrate position effects on the ion/deposition flux ratio in magnetron sputteringClarke, G.A. / Osborne, N.R. / Parsons, R.R. et al. | 1991
- 1171
-
Unbalanced magnetrons and new sputtering systems with enhanced plasma ionizationMusil, J. / Kadlec, S. / Munz, W.D. et al. | 1991
- 1178
-
Correlations of plasma properties and magnetic field characteristics to TiN film properties formed using a dual unbalanced magnetron systemRohde, S.L. / Sproul, W.D. / Rohde, J.R. et al. | 1991
- 1184
-
Reactive sputtering of molybdenum-oxide gradient-index filtersJankowski, A.F. / Schrawyer, L.R. / Perry, P.L. et al. | 1991
- 1188
-
Experimental studies of inhomogeneous coatings for optical applicationsOuellette, M.F. / Lang, R.V. / Yan, K.L. / Bertram, R.W. / Owles, R.S. / Vincent, D. et al. | 1991
- 1193
-
Indium-tin oxide films radio frequency sputtered from specially formulated high density indium-tin oxide targetsKulkarni, S. / Bayard, M. et al. | 1991
- 1197
-
Modification of optical and mechanical properties of BaF2 bombarded by either Xe or Ar ionScaglione, S. / Flori, D. / Caneve, L. / Emiliani, G. et al. | 1991