Properties of AlN Layers Grown by Sublimation Epitaxy (Englisch)
Nationallizenz
- Neue Suche nach: Beshkova, M.
- Neue Suche nach: Zakhariev, Z.
- Neue Suche nach: Birch, Jens
- Neue Suche nach: Kakanakova-Georgieva, A.
- Neue Suche nach: Yakimova, Rositza
In:
Materials Science Forum
;
433-436
;
995-998
;
2003
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Properties of AlN Layers Grown by Sublimation Epitaxy
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Beteiligte:
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Erschienen in:Materials Science Forum ; 433-436 ; 995-998
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:15.09.2003
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 433-436
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate| 2003
- 9
-
Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling| 2003
- 13
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Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method| 2003
- 17
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On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates| 2003
- 17
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On the Early Stages of Sublimation Growth of 4H-SiC Using 8^o Off-Oriented SubstratesSchulz, D. / Lechner, M. / Rost, H.-J. / Siche, D. / Wollweber, J. et al. | 2003
- 21
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Growth of High Quality p-Type 4H-SiC Substrates by HTCVD| 2003
- 25
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Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation| 2003
- 29
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Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation| 2003
- 33
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HTCVD Grown Semi-Insulating SiC Substrates| 2003
- 39
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Sublimation-Grown Semi-Insulating SiC for High Frequency Devices| 2003
- 45
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Defects in Semi-Insulating SiC Substrates| 2003
- 51
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Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth| 2003
- 55
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PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals| 2003
- 59
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Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC| 2003
- 63
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Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method| 2003
- 67
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Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient| 2003
- 71
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Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC| 2003
- 75
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Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation| 2003
- 79
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Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor| 2003
- 83
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Defect Reduction in SiC Crystals Grown by the Modified Lely Method| 2003
- 87
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A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process| 2003
- 91
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Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport| 2003
- 95
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Morphological Features of Sublimation-Grown 4H-SiC Layers| 2003
- 99
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Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth| 2003
- 103
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Heat Transfer Modeling of a New Crystal Growth Process| 2003
- 107
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Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution| 2003
- 111
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Crystal Interface Shape Simulation during SiC Sublimation Growth| 2003
- 115
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Growth at High Rates and Characterization of Bulk 3C-SiC Material| 2003
- 119
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Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates| 2003
- 125
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SiC Epitaxy on Non-Standard Surfaces| 2003
- 131
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4H-SiC Epitaxial Growth for High-Power Devices| 2003
- 137
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Predictions of Nitrogen Doping in SiC Epitaxial Layers| 2003
- 141
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Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC| 2003
- 145
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Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors| 2003
- 149
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Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition| 2003
- 153
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Nitrogen Delta Doping in 4H-SiC Epilayers| 2003
- 157
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Temperature Effects in SiC Epitaxial Growth| 2003
- 161
-
Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD| 2003
- 165
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Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System| 2003
- 169
-
Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers| 2003
- 173
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Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation| 2003
- 177
-
Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes| 2003
- 181
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Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?| 2003
- 185
-
Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD| 2003
- 189
-
Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers| 2003
- 193
-
The Effect of Thermal Gradients on SiC Wafers| 2003
- 197
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Complete Micropipe Dissociation in 4H-SiC(03&unknown;8) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier DiodesKimoto, T. / Danno, K. / Fujihira, K. / Shiomi, H. / Matsunami, H. et al. | 2003
- 197
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Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes| 2003
- 201
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Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method| 2003
- 205
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Growth of p-Type SiC Layer by Sublimation Epitaxy| 2003
- 209
-
Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate| 2003
- 213
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Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy| 2003
- 217
-
Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-| 2003
- 221
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Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor| 2003
- 225
-
Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization| 2003
- 225
-
Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and I-V CharacterizationMuto, H. / Asano, T. / Kusumori, T. et al. | 2003
- 229
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Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates| 2003
- 233
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High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates| 2003
- 237
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SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures| 2003
- 241
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Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers| 2003
- 247
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Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices| 2003
- 253
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Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing| 2003
- 257
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Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering| 2003
- 261
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Conditions for Micropipe Dissociation by 4H-SiC CVD Growth| 2003
- 265
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Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging| 2003
- 269
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Doping-Related Strain in n-Doped 4H-SiC Crystals| 2003
- 273
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Stacking Faults in 3C-SiC Relax Lattice Deformation| 2003
- 277
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Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes| 2003
- 281
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Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers| 2003
- 285
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Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC| 2003
- 289
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High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals| 2003
- 293
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Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation| 2003
- 297
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Dynamics of 4H-SiC Plasticity| 2003
- 301
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Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC| 2003
- 305
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Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy| 2003
- 309
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Photoluminescence Up-Conversion Processes in SiC| 2003
- 313
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New Photoluminescence Features in 4H-SiC Induced by Hydrogenation| 2003
- 317
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Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy| 2003
- 321
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Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum| 2003
- 325
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Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC| 2003
- 329
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Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide| 2003
- 333
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Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC| 2003
- 337
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Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals| 2003
- 341
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Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC| 2003
- 345
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Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC| 2003
- 345
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D~I~I PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiCCarlsson, F. H. C. / Sridhara, S. G. / Hallen, A. / Bergman, J. P. / Janzen, E. et al. | 2003
- 349
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Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping| 2003
- 353
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Raman Imaging Analysis of SiC Wafers| 2003
- 357
-
Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers| 2003
- 361
-
Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique| 2003
- 365
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Electrical and Optical Characterization of SiC| 2003
- 371
-
Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC| 2003
- 375
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Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy| 2003
- 379
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Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy| 2003
- 383
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On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC| 2003
- 387
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High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers| 2003
- 391
-
Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes| 2003
- 395
-
Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization| 2003
- 399
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Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping| 2003
- 403
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From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks| 2003
- 407
-
Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation| 2003
- 411
-
Parameters of Electron-Hole Scattering in Silicon Carbide| 2003
- 415
-
Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy| 2003
- 419
-
Electrical Characterization of Ni/Porous SiC/n-SiC Structure| 2003
- 423
-
Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC| 2003
- 427
-
Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region| 2003
- 431
-
Mapping on Bulk and Epitaxy Layer 4H-SiC| 2003
- 435
-
Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates| 2003
- 439
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Electron-Induced Damage Effects in 4H-SiC Schottky Diodes| 2003
- 443
-
Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation| 2003
- 447
-
Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC| 2003
- 451
-
Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films| 2003
- 455
-
Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes| 2003
- 459
-
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers| 2003
- 463
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Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters| 2003
- 467
-
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions| 2003
- 471
-
Identification and Annealing of Common Intrinsic Defect Centers| 2003
- 477
-
Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation| 2003
- 481
-
Nitrogen-Vacancy Complexes in SiC – Final Annealing Products of the Silicon Vacancy?| 2003
- 487
-
A Deep Erbium-Related Bandgap State in 4H Silicon Carbide| 2003
- 491
-
Theoretical Study of Antisite Aggregation in α-SiC| 2003
- 491
-
Theoretical Study of Antisite Aggregation in alpha-SiCRauls, E. / Gali, A. / Deak, P. / Frauenheim, T. et al. | 2003
- 495
-
EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC| 2003
- 499
-
Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC| 2003
- 503
-
Phosphorus-Related Shallow and Deep Defects in 6H-SiC| 2003
- 507
-
EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V| 2003
- 511
-
Calculation of Hyperfine Constants of Defects in 4H-SiC| 2003
- 515
-
A Simple Model of 3d Impurities in Cubic Silicon Carbide| 2003
- 519
-
Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide| 2003
- 523
-
A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi| 2003
- 527
-
Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond| 2003
- 531
-
Electronic Properties of Stacking Faults in 15R-SiC| 2003
- 535
-
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC| 2003
- 539
-
Angle-Resolved Studies of SiO2/SiC Samples| 2003
- 543
-
Positron Annihilation Studies of Defects at the SiO2/SiC Interface| 2003
- 547
-
A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface| 2003
- 551
-
Traps at the Interface of 3C-SiC/SiO2-MOS-Structures| 2003
- 555
-
Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements| 2003
- 559
-
Structural Defects at SiO2/SiC Interfaces Detected by Positron Annihilation| 2003
- 563
-
Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen| 2003
- 567
-
High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000&unknown;) Face Using H~2 Post-Oxidation AnnealingFukuda, K. / Senzaki, J. / Kojima, K. / Suzuki, T. et al. | 2003
- 567
-
High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing| 2003
- 571
-
Cubic SiC Surface Structure Studied by X-Ray Diffraction| 2003
- 575
-
Adsorption of Toluene on Si(100) from First Principles| 2003
- 579
-
Atomic Structure of Si-Rich 3C-SiC(001)-(3x2): a Photoelectron Diffraction Study| 2003
- 583
-
Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces| 2003
- 587
-
Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces| 2003
- 591
-
Modelling the Formation of Nano-Sized SiC on Si| 2003
- 595
-
Nanostructure Formation on a Surface of 6H-SiC by Laser Radiation| 2003
- 599
-
Theoretical Investigation of Adsorption of N-Containing Species at SiC(0001) Surfaces| 2003
- 605
-
Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing| 2003
- 609
-
Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC| 2003
- 613
-
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11&unknown;0) FaceSenzaki, J. / Kojima, K. / Suzuki, T. / Fukuda, K. et al. | 2003
- 613
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Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face| 2003
- 617
-
Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC| 2003
- 621
-
Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes| 2003
- 625
-
High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC| 2003
- 629
-
SiC Delta-Doped-Layer Structures and DACFET| 2003
- 633
-
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC| 2003
- 637
-
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers| 2003
- 641
-
Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy| 2003
- 645
-
Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide| 2003
- 649
-
First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping| 2003
- 653
-
Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC| 2003
- 657
-
Porous SiC: New Applications through In- and Out- Dopant Diffusion| 2003
- 661
-
Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs| 2003
- 665
-
Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions| 2003
- 669
-
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs| 2003
- 673
-
Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data| 2003
- 677
-
Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN| 2003
- 681
-
Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC| 2003
- 685
-
Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement| 2003
- 689
-
The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes| 2003
- 693
-
Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC| 2003
- 697
-
Diffusion-Welded Al Contacts to p-Type SiC| 2003
- 701
-
Thermal Etching of 6H-SiC (11-20) Substrate Surface| 2003
- 701
-
Thermal Etching of 6H-SiC (11&unknown;0) Substrate SurfaceNishiguchi, T. / Ohshima, S. / Nishino, S. et al. | 2003
- 705
-
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission| 2003
- 705
-
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000&unknown;), (1&unknown;00) and (1&unknown;10) Faces Measured by I-V, C-V and Internal PhotoemissionShigiltchoff, O. / Bai, S. / Devaty, R. P. / Choyke, W. J. / Kimoto, T. / Hobgood, D. / Neudeck, P. G. / Porter, L. M. et al. | 2003
- 709
-
Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers| 2003
- 713
-
Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability| 2003
- 717
-
Surface Structure of Electrochemically Etched alpha-SiC SubstratesMikami, H. / Umetani, A. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2003
- 717
-
Surface Structure of Electrochemically Etched α-SiC Substrates| 2003
- 721
-
Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?| 2003
- 725
-
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process| 2003
- 731
-
Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics| 2003
- 737
-
A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates| 2003
- 741
-
Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer| 2003
- 745
-
RF Characteristics of Short-Channel SiC MESFETs| 2003
- 749
-
Passivation Effect on Channel Recessed 4H-SiC MESFETs| 2003
- 753
-
4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure| 2003
- 757
-
Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC| 2003
- 761
-
Modelling of Radiation Response of p-Channel SiC MOSFETs| 2003
- 765
-
Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET| 2003
- 769
-
4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications| 2003
- 773
-
Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs| 2003
- 777
-
Optimisation of a 4H-SiC Enhancement Mode Power JFET| 2003
- 781
-
Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors| 2003
- 785
-
Power Amplification in UHF Band Using SiC RF Power BJTs| 2003
- 789
-
Demonstration of Monolithic Darlington Transistors in 4H-SiC| 2003
- 793
-
High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Omega ConfigurationFriedrichs, P. / Mitlehner, H. / Schorner, R. / Dohnke, K. O. / Stephani, D. et al. | 2003
- 793
-
High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration| 2003
- 797
-
Design and Technology Considerations for a RF BJT in SiC| 2003
- 801
-
Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate| 2003
- 805
-
SiC Power Devices: How to be Competitive towards Si-Based Solutions?| 2003
- 813
-
SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations| 2003
- 819
-
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure| 2003
- 823
-
Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes| 2003
- 827
-
Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results| 2003
- 831
-
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process| 2003
- 835
-
Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode| 2003
- 839
-
The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation| 2003
- 843
-
1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal| 2003
- 847
-
Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level| 2003
- 851
-
Optical Switch-On of Silicon Carbide Thyristor| 2003
- 855
-
Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base| 2003
- 859
-
SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth| 2003
- 863
-
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension| 2003
- 867
-
4H-SiC pn Diode Grown by LPE Method for High-Power Applications| 2003
- 871
-
Characterization of a 4H-SiC High Power Density Controlled Current Limiter| 2003
- 875
-
Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes| 2003
- 879
-
Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination| 2003
- 883
-
Fabrication and Characterisation of High-Voltage SiC-Thyristors| 2003
- 887
-
SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC| 2003
- 891
-
Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices| 2003
- 895
-
To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes| 2003
- 901
-
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC| 2003
- 907
-
Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults| 2003
- 913
-
Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes| 2003
- 917
-
Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices| 2003
- 921
-
Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study| 2003
- 925
-
Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11&unknown;0) FaceKojima, K. / Ohno, T. / Fujimoto, T. / Katsuno, M. / Ohtani, N. / Nishio, J. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Tanaka, T. et al. | 2003
- 925
-
Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face| 2003
- 929
-
Reliability of 4H-SiC p-n Diodes on LPE Grown Layers| 2003
- 933
-
In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes| 2003
- 937
-
SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers| 2003
- 941
-
SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range| 2003
- 945
-
Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs| 2003
- 949
-
New Tunnel Schottky SiC Devices Using Mixed Conduction Ceramics| 2003
- 953
-
MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue Gases| 2003
- 957
-
Radiation Hardness of Silicon Carbide| 2003
- 961
-
NO Gas Detection at High Temperature Using Thin-Pt 4H-SiC and 6H-SiC Schottky Diodes| 2003
- 965
-
Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes| 2003
- 969
-
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation| 2003
- 975
-
Effect of Tantalum in Sublimation Growth of Aluminum Nitride| 2003
- 979
-
Growth of AlN Bulk Crystals by Sublimation Sandwich Method| 2003
- 983
-
Seeded PVT Growth of Aluminum Nitride on Silicon Carbide| 2003
- 987
-
Growth and Characterization of Epitaxial Wurtzite Al1-xInxN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering| 2003
- 991
-
Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC| 2003
- 991
-
Implementation of Hot-Wall MOCVD in the Growth of High-Quality GaN on SiCKakanakova-Georgieva, A. / Forsberg, U. / Hallin, C. / Persson, P. O. A. / Storasta, L. / Pozina, G. / Birch, J. / Hultman, L. / Janzen, E. et al. | 2003
- 995
-
Properties of AlN Layers Grown by Sublimation Epitaxy| 2003
- 999
-
Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy| 2003
- 1003
-
Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates| 2003