A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor (Englisch)
Nationallizenz
- Neue Suche nach: Zhang, Jian Hui
- Neue Suche nach: Alexandrov, Petre
- Neue Suche nach: Zhao, Jian Hui
In:
Materials Science Forum
;
457-460
;
1165-1168
;
2004
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor
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Beteiligte:
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Erschienen in:Materials Science Forum ; 457-460 ; 1165-1168
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:15.06.2004
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 457-460
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances| 2004
- 9
-
SiC Crystal Growth by HTCVD| 2004
- 15
-
Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors| 2004
- 21
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Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors| 2004
- 29
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High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment| 2004
- 35
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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices| 2004
- 41
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Large Diameter 4H-SiC Substrates for Commercial Power Applications| 2004
- 47
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Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique| 2004
- 51
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Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals| 2004
- 55
-
Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide| 2004
- 59
-
Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon| 2004
- 63
-
Faceted Growth of SiC Bulk Crystals| 2004
- 67
-
Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth| 2004
- 71
-
Free Growth of 4H-SiC by Sublimation Method| 2004
- 75
-
Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals| 2004
- 79
-
Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality| 2004
- 83
-
Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal| 2004
- 87
-
Growth of Bulk SiC by Halide Chemical Vapor Deposition| 2004
- 91
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Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method| 2004
- 95
-
Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC| 2004
- 99
-
Large Diameter and Long Length Growth of SiC Single Crystal| 2004
- 103
-
Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport| 2004
- 107
-
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis| 2004
- 111
-
Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide| 2004
- 115
-
High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials| 2004
- 119
-
Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C| 2004
- 123
-
Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent| 2004
- 127
-
The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth Method| 2004
- 131
-
Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors| 2004
- 135
-
Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method| 2004
- 139
-
In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth| 2004
- 143
-
Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite| 2004
- 147
-
Microstructure of Cubic SiC Grown by the Modified Lely-Method| 2004
- 151
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Growth of 3C-SiC Bulk Material by the Modified Lely Method| 2004
- 157
-
Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques| 2004
- 163
-
Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces| 2004
- 163
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Surface Mechanisms in Homoepitaxial Growth on alpha-SiC{0001}-Vicinal FacesNakamura, S. I. / Kimoto, T. / Matsunami, H. et al. | 2004
- 169
-
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers| 2004
- 175
-
Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers| 2004
- 181
-
Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications| 2004
- 185
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Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask| 2004
- 189
-
Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition| 2004
- 193
-
Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD| 2004
- 197
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High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face| 2004
- 201
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Growth of Device Quality 4H-SiC High Velocity Epitaxy| 2004
- 205
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Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition| 2004
- 209
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4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition| 2004
- 213
-
Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth| 2004
- 217
-
Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor SystemsSartel, C. / Balloud, C. / Souliere, V. / Juillaguet, S. / Dazord, J. / Monteil, Y. / Camassel, J. / Rushworth, S. et al. | 2004
- 217
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Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems| 2004
- 221
-
Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization| 2004
- 221
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Growth of Homoepitaxial Films on 4H-SiC(1120)and 8^o Off-Axis 4H-SiC(0001) Substrates and their CharacterizationBishop, S. M. / Preble, E. A. / Hallin, C. / Henry, A. / Storasta, L. / Jacobson, H. / Wagner, B. P. / Reitmeier, Z. J. / Janzen, E. / Davis, R. F. et al. | 2004
- 225
-
Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation| 2004
- 229
-
Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions| 2004
- 233
-
Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor| 2004
- 237
-
Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates| 2004
- 237
-
Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC SubstratesBlanc, C. / Sartel, C. / Souliere, V. / Juillaguet, S. / Monteil, Y. / Camassel, J. et al. | 2004
- 241
-
Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate| 2004
- 245
-
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism| 2004
- 249
-
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum| 2004
- 253
-
Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration| 2004
- 257
-
Pendeo Epitaxial Growth of 3C-SiC on Si Substrates| 2004
- 261
-
Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects| 2004
- 265
-
Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates| 2004
- 269
-
Growth of SiC Films using Tetraethylsilane| 2004
- 273
-
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"| 2004
- 277
-
Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy| 2004
- 281
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Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)| 2004
- 285
-
Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition| 2004
- 289
-
Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy| 2004
- 293
-
Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE| 2004
- 297
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Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)| 2004
- 301
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Stress Control in 3C-SiC Films Grown on Si(111)| 2004
- 305
-
Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC| 2004
- 309
-
Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows| 2004
- 313
-
Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers| 2004
- 317
-
Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films| 2004
- 317
-
Low Temperature (320^oC) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin FilmsMiyajima, S. / Yamada, A. / Konagai, M. et al. | 2004
- 321
-
Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate| 2004
- 325
-
Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH3SiH3| 2004
- 329
-
Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction| 2004
- 333
-
Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures| 2004
- 339
-
Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction| 2004
- 343
-
TEM Observations of 4H-SiC Deformed at Room Temperature and 150^oCDemenet, J. L. / Milhet, X. / Rabier, J. / Cordier, P. et al. | 2004
- 343
-
TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C| 2004
- 347
-
TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent| 2004
- 351
-
Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process| 2004
- 355
-
Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy| 2004
- 359
-
TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes| 2004
- 363
-
X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface| 2004
- 367
-
Structural Transformation of Dislocated Micropipes in Silicon Carbide| 2004
- 371
-
Deformation of 4H-SiC Single Crystals Oriented for Prism Slip| 2004
- 375
-
Inelastic Stress Relaxation in Single Crystal SiC Substrates| 2004
- 379
-
Dependence of Micropipe Dissociation on Surface Orientation| 2004
- 383
-
Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach| 2004
- 387
-
Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H| 2004
- 391
-
Reconstruction of Cleaved 6H-SiC Surfaces| 2004
- 395
-
The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC| 2004
- 399
-
H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization| 2004
- 403
-
Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum| 2004
- 407
-
SiC Surface Nanostructures Induced by Self-Ordering of Nano-Facets| 2004
- 411
-
Dynamic of Laser Ablation in SiC| 2004
- 415
-
Tailoring the SiC Subsurface Stacking by the Chemical Potential| 2004
- 419
-
Growth of Ultrathin Ag Films on 4H-SiC(0001)| 2004
- 423
-
Wettability Study of SiC in Correlation with XPS Analysis| 2004
- 427
-
Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence Spectroscopy| 2004
- 431
-
Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching| 2004
- 437
-
Defects in High-Purity Semi-Insulating SiC| 2004
- 443
-
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC| 2004
- 449
-
A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials| 2004
- 453
-
Density Functional Based Modelling of 30^o Partial Dislocations in SiCBlumenau, A. T. / Jones, R. / Oberg, S. / Briddon, P. R. / Frauenheim, T. et al. | 2004
- 453
-
Density Functional Based Modelling of 30° Partial Dislocations in SiC| 2004
- 457
-
Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC| 2004
- 461
-
Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC| 2004
- 465
-
EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC| 2004
- 465
-
EPR and Pulsed ENDOR Study of E16 and Related Defects in 4H-SiCUmeda, T. / Ishitsuka, Y. / Isoya, J. / Morishita, N. / Ohshima, T. / Kamiya, T. et al. | 2004
- 469
-
Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC| 2004
- 473
-
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC| 2004
- 477
-
Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors| 2004
- 481
-
Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC| 2004
- 485
-
Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation| 2004
- 489
-
Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC| 2004
- 493
-
Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements| 2004
- 497
-
The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC| 2004
- 501
-
Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates| 2004
- 505
-
Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution| 2004
- 509
-
Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma| 2004
- 513
-
Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy| 2004
- 517
-
Annealing Study on Radiation-Induced Defects in 6H-SiC| 2004
- 521
-
Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films| 2004
- 525
-
Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes| 2004
- 529
-
Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers| 2004
- 533
-
Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes| 2004
- 537
-
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes| 2004
- 543
-
SiC Studied Via LEEN and Cathodoluminescence Spectroscopy| 2004
- 549
-
Properties of the Bound Excitons Associated to the 3838A Line in 4H-SiC and the 4182A Line in 6H-SiCHenry, A. / Janson, M. S. / Janzen, E. et al. | 2004
- 549
-
Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC| 2004
- 555
-
Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide| 2004
- 561
-
Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC| 2004
- 565
-
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers| 2004
- 569
-
Photoluminescence Mapping of a SiC Wafer in Device Processing| 2004
- 573
-
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells| 2004
- 577
-
Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers| 2004
- 581
-
Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates| 2004
- 585
-
Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC| 2004
- 589
-
Photoluminescence Study of C-H and C-D Centers in 4H SiC| 2004
- 593
-
Optical Characterization of Full SiC Wafer| 2004
- 597
-
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum| 2004
- 601
-
Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research| 2004
- 605
-
Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies| 2004
- 609
-
Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC| 2004
- 613
-
Raman Scattering by Coupled Phonon-Plasmon Modes| 2004
- 617
-
Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy| 2004
- 621
-
Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering| 2004
- 625
-
Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method| 2004
- 629
-
Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition| 2004
- 633
-
Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy| 2004
- 637
-
Low Temperature Annealing of Optical Centres in 4H SiC| 2004
- 641
-
Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC| 2004
- 645
-
On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC| 2004
- 649
-
Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC| 2004
- 653
-
Brillouin Scattering Studies of Surface Acoustic Waves in SiC| 2004
- 657
-
Optical Investigation of the Built-In Strain in 3C-SiC Epilayers| 2004
- 661
-
Specificity of Electron Impact Ionization in Superstructure Silicon Carbide| 2004
- 665
-
Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC| 2004
- 669
-
Electrical Characterization of Semi-Insulating 6H-SiC Substrates| 2004
- 673
-
Impact Ionization Coefficients of 4H-SiC| 2004
- 677
-
Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC| 2004
- 681
-
Electrochemical C-V Profiling of n-Type 4H-SiC| 2004
- 685
-
Impurity Conduction Observed in Al-Doped 6H-SiC| 2004
- 689
-
Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility| 2004
- 693
-
High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures| 2004
- 697
-
As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC| 2004
- 701
-
Impact Ionization in alpha-SiC and Avalanche PhotoamplifiersSankin, V. I. et al. | 2004
- 701
-
Impact Ionization in α-SiC and Avalanche Photoamplifiers| 2004
- 705
-
Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers| 2004
- 711
-
The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory| 2004
- 715
-
The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study| 2004
- 719
-
Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source| 2004
- 723
-
In-Situ Er-Doping of SiC Bulk Single Crystals| 2004
- 727
-
Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source| 2004
- 731
-
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth| 2004
- 735
-
Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt| 2004
- 739
-
Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition| 2004
- 743
-
Formation of SiC Delta-Doped-Layer Structures by CVD| 2004
- 747
-
As-Grown 4H-SiC Epilayers with Magnetic Properties| 2004
- 751
-
Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC| 2004
- 755
-
Non-Contact Doping Profiling in Epitaxial SiC| 2004
- 759
-
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates| 2004
- 763
-
Spin-On Doping of Porous SiC with Er| 2004
- 767
-
Sc Impurity in Silicon Carbide| 2004
- 771
-
Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS| 2004
- 775
-
Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements| 2004
- 779
-
Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process| 2004
- 783
-
Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide| 2004
- 787
-
Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance| 2004
- 791
-
Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS| 2004
- 797
-
Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers| 2004
- 801
-
Electro-Chemical Mechanical Polishing of Silicon Carbide| 2004
- 805
-
Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates| 2004
- 809
-
Surface Modification of 3C-SiC for Good Ni Ohmic Contact| 2004
- 813
-
Mechanisms in Electrochemical Etching of alpha-SiC SubstratesMikami, H. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 813
-
Mechanisms in Electrochemical Etching of α-SiC Substrates| 2004
- 817
-
Modification of the Silicon Carbide by Proton Irradiation| 2004
- 821
-
Etching of SiC with Fluorine ECR Plasma| 2004
- 825
-
Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy| 2004
- 829
-
Improvement of SiC Wafer Warp by Annealing| 2004
- 833
-
Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts| 2004
- 837
-
Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC| 2004
- 841
-
Improved AlNi Ohmic Contacts to p-Type SiC| 2004
- 845
-
Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures| 2004
- 849
-
In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer| 2004
- 853
-
The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy| 2004
- 857
-
The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC| 2004
- 861
-
Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier| 2004
- 865
-
Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC| 2004
- 869
-
Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts| 2004
- 873
-
Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide| 2004
- 877
-
High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC| 2004
- 881
-
Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC| 2004
- 885
-
Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation| 2004
- 889
-
Structural Defects Formed in Al-Implanted and Annealed 4H-SiC| 2004
- 893
-
Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals| 2004
- 897
-
Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing| 2004
- 901
-
Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC| 2004
- 905
-
Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy| 2004
- 909
-
Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?| 2004
- 913
-
Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face| 2004
- 917
-
Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC| 2004
- 921
-
Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers| 2004
- 925
-
Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation| 2004
- 929
-
Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC| 2004
- 933
-
Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap| 2004
- 937
-
Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature| 2004
- 941
-
Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction| 2004
- 945
-
SiC Donor Doping by 300^oC P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing TemperaturePoggi, A. / Nipoti, R. / Moscatelli, F. / Cardinali, G. C. / Canino, M. et al. | 2004
- 945
-
SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature| 2004
- 951
-
SiC-Based Current Limiter Devices| 2004
- 957
-
High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications| 2004
- 963
-
SiC Devices for High Voltage High Power Applications| 2004
- 969
-
First Principles Derivation of Carrier Transport across Metal - SiC Barriers| 2004
- 973
-
Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics| 2004
- 977
-
Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide| 2004
- 981
-
Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology| 2004
- 985
-
4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues| 2004
- 989
-
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation| 2004
- 993
-
Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements| 2004
- 997
-
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature| 2004
- 1001
-
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments| 2004
- 1005
-
P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching| 2004
- 1009
-
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate| 2004
- 1013
-
Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring| 2004
- 1017
-
Current Transport Mechanisms in 4H-SiC PiN Diodes| 2004
- 1021
-
On-Chip Temperature Monitoring of a SiC Current Limiter| 2004
- 1025
-
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study| 2004
- 1029
-
Low Voltage Silicon Carbide Zener Diode| 2004
- 1033
-
Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension| 2004
- 1037
-
Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide| 2004
- 1041
-
4H-SiC p-n Diode using Internal Ring (IR) Termination Technique| 2004
- 1045
-
Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers| 2004
- 1049
-
Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties| 2004
- 1053
-
The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes| 2004