Frenkel Pairs in GaAs and InP (Englisch)
Nationallizenz
- Neue Suche nach: Karsten, K.
- Neue Suche nach: Ehrhart, Peter
In:
Materials Science Forum
;
143-147
;
365-370
;
1993
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Frenkel Pairs in GaAs and InP
-
Beteiligte:
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Erschienen in:Materials Science Forum ; 143-147 ; 365-370
-
Verlag:
- Neue Suche nach: Trans Tech Publications
-
Erscheinungsort:Stafa-Zurich, Switzerland
-
Erscheinungsdatum:28.10.1993
-
Format / Umfang:6 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 143-147
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Defects in Heterogeneous Solids - From Microphysics to Macrophysics| 1993
- 9
-
35 Years of Defects in Semiconductors: What Next?| 1993
- 21
-
Optical Spectroscopy of Defects in Diamond: Current Understanding and Future Problems| 1993
- 29
-
Isotope Dependence of the Frequency of Localized Vibrational Modes in Diamond| 1993
- 35
-
Native Paramagnetic Defects in Diamond Films| 1993
- 41
-
Titanium Impurity in Diamond| 1993
- 45
-
Theory of Nitrogen Aggregates in Diamond: The H3 and H4 Defects| 1993
- 51
-
Nitrogen and Nitrogen-Vacancy Complexes in Diamond| 1993
- 57
-
Time Resolved Photoluminescence and Optically Detected Magnetic Resonance Investigations on Synthetic Diamond| 1993
- 63
-
Endor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiC| 1993
- 69
-
Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC)| 1993
- 75
-
Magnetic Circular Dichroism and Optically Detected EPR of a Vanadium Impurity in 6H-Silicon Carbide| 1993
- 81
-
Boron in Cubic Silicon Carbide: Dynamic Effects in ESR| 1993
- 87
-
ODMR Studies of MOVPE-Grown GaN Epitaxial Layers| 1993
- 93
-
Iron Acceptors in Gallium Nitride (GaN)| 1993
- 99
-
Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study| 1993
- 105
-
The Bound Exciton Model for Isoelectronic Centers in Silicon| 1993
- 111
-
Near-Surface Reactions of Gold and Silver in Silicon| 1993
- 117
-
A New Photoluminescent Center in Mercury-Doped Silicon| 1993
- 123
-
Electrical and Optical Characterization of Magnesium- and Calcium-Related Defect Centers in Silicon| 1993
- 129
-
Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related Centers| 1993
- 135
-
Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence| 1993
- 141
-
EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon| 1993
- 147
-
Role of Point Defects in Oxygen Agglomeration in Si| 1993
- 153
-
DLTS Studies of Thermally Treated Carbon-Rich Silicon| 1993
- 159
-
A Metastable Selenium-Related Center in Silicon| 1993
- 165
-
The Excited 5T1 State of the Feio -Center in Silicon| 1993
- 171
-
Identification of the Iron-Boron Line Spectrum in Silicon| 1993
- 177
-
Ab-Initio Total Energy Calculation of Iron-Aluminum Pairs in Silicon| 1993
- 183
-
On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si| 1993
- 189
-
Detection of Defects Responsible for Lifetime in p-Type Si| 1993
- 195
-
Spin Dependent Photoconductivity in Silicon-on-Sapphire| 1993
- 201
-
Group-V Antisite Defects, VGa , in GaAs| 1993
- 211
-
Electronic Structure of PIn Antisite in InP| 1993
- 217
-
On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance| 1993
- 223
-
The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model| 1993
- 229
-
The Assignment of the 78/203meV Double Acceptor in GaAs to BAs Impurity Antisite Centers| 1993
- 235
-
Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide| 1993
- 241
-
Incorporation of Be Into Inx Ga1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes| 1993
- 247
-
Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C| 1993
- 253
-
Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide| 1993
- 259
-
Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy| 1993
- 265
-
Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs| 1993
- 271
-
The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP| 1993
- 277
-
Nitrogen-Hydrogen Complexes in GaP and GaAs| 1993
- 283
-
Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide| 1993
- 289
-
Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As| 1993
- 295
-
Defects in Electron Irradiated GaP and GaInP| 1993
- 299
-
Positron Lifetime Investigations of Electron Irradiated InP| 1993
- 305
-
Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements| 1993
- 311
-
Fine Structure of the (Fe2+, h) Bound States in GaP and InP| 1993
- 317
-
New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors| 1993
- 323
-
FTIR Absorption and Photoluminescence Study of a New Defect System in GaP:Fe:S| 1993
- 329
-
New Aspects of (Semi-Insulating) GaP:Cu| 1993
- 335
-
Isotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials| 1993
- 341
-
Native Vacancies in Semi-Insulating GaAs Observed by Positron Lifetime Spectrocopy under Photoexcitation| 1993
- 347
-
Positron Annihilation at Ionized Acceptors and Vacancies in Indium Phosphide After Electron Irradiation| 1993
- 353
-
Properties of Important Deep Level T3 in Semi-Insulating Gallium Arsenide| 1993
- 359
-
Electron and Hole Traps in AlAs p+-n Junctions Grown by MBE| 1993
- 365
-
Frenkel Pairs in GaAs and InP| 1993
- 371
-
Lattice Properties of GaAs Layers Grown by MBE Method at Low Temperature| 1993
- 377
-
Semiconductor Luminescence and Effects of Excitation Transfer| 1993
- 385
-
Doping of Wide-Gap II-VI Compounds for Short-Wavelength Visible Light Emitting Devices| 1993
- 391
-
Metal Vacancies in Li and In Doped ZnSe and CdS| 1993
- 397
-
The Identification of Intrinsic Vacancy Defects in CdTe| 1993
- 399
-
Photoluminescence and Optically Detected Magnetic Resonance Investigations on the Indium A-Center in CdTe:In| 1993
- 405
-
Indium Donor Complexes with Cation Vacancies in CdTe and ZnSe| 1993
- 411
-
Energy Transfer between Fe2+ Centers in Polymorphic ZnS| 1993
- 417
-
Electron Nuclear Double Resonance Investigations on the Tellurium Vacancy in CdTe| 1993
- 423
-
Frenkel Pairs on the Te Sublattice of ZnTe? An ODMR Study| 1993
- 429
-
Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation| 1993
- 435
-
Optical and Magnetic Properties of Titanium Ions in CdTe and (Cd, Zn)Te| 1993
- 441
-
Time-Resolved Excitation Spectroscopy of Red-Luminescence in ZnSe:Te| 1993
- 447
-
Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds| 1993
- 453
-
Ligand Induced Isotope Shifts of Transition Metal Centers in ZnO| 1993
- 465
-
A Positron Annihilation Study of Defects in ZnO and Their Relation to Luminescence Centers| 1993
- 471
-
Defect Control in Relaxed, Graded GeSi/Si| 1993
- 483
-
Origin of Mosaic Structure in Relaxed Si1-xGex Layers| 1993
- 489
-
Point Defects in SiGe Epitaxial Layers and Bulk Crystals| 1993
- 495
-
Defect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge Spectroscopy| 1993
- 501
-
Test for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related Luminescence| 1993
- 507
-
Strain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-Implantation| 1993
- 513
-
Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex| 1993
- 519
-
Diffusion, Interface Mixing and Schottky Barrier Formation| 1993
- 531
-
Strain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs| 1993
- 537
-
1D Properties of Straight Dislocation Segments in Si and Ge| 1993
- 543
-
Metastable Surface Defects in p-Type GaAs| 1993
- 549
-
Raman Study of Misfit Dislocations in ZnSe/GaAs Structures| 1993
- 555
-
Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen| 1993
- 561
-
Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements| 1993
- 567
-
Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM| 1993
- 573
-
Coulomb Energy of Traps in Semiconductor Space Charge Regions| 1993
- 579
-
Effect of Interface on Capture and Emission Processes via Deep Centers| 1993
- 583
-
Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface| 1993
- 587
-
Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset| 1993
- 593
-
Impurity-Enhanced Disordering in Superlattices| 1993
- 599
-
Exciton Spectroscopy of Near-Surface GaAs/Al0.3Ga0.7As Quantum Wells - The New Method of Band Bending Investigation| 1993
- 605
-
Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells| 1993
- 611
-
Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells| 1993
- 617
-
Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures| 1993
- 623
-
DX Centers in Reduced Dimensionality n-Type AlGaAs Structures| 1993
- 629
-
Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells| 1993
- 635
-
Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces| 1993
- 641
-
Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells| 1993
- 647
-
Si Diffusion out of δ-Planes in a GaAs Superlattice| 1993
- 653
-
Luminescence of a Delta Doping Related Exciton in GaAs:Si| 1993
- 657
-
Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells| 1993
- 663
-
The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs| 1993
- 669
-
Electronic States of n-Type δ-Doping in GaAs Heterostructures| 1993
- 675
-
Phonon Spectroscopy of Defects Correlated with the Diffusion of Zn into Si| 1993
- 681
-
High Spectral Resolution Study of Shallow Donors in GaInAs| 1993
- 687
-
The Influence of Spin and Composition Fluctuations on Shallow Donor States in Semimagnetic Semiconductors| 1993
- 693
-
Sc Impurity in CdSe and Cd1-xMnxSe| 1993
- 699
-
The Theory of Rare-Earth Impurities in Semiconductors| 1993
- 707
-
The Physics and Application of Si:Er for Light Emitting Diodes| 1993
- 715
-
PL and EPR Studies of Er-Implanted FZ- and CZ-Si| 1993
- 721
-
Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds| 1993
- 725
-
Efficiency of Rare Earth Intra-4f-Shell Luminescence in InP| 1993
- 731
-
Pressure-Induced Recovery of the 4f-Shell Luminescence of Yb Doped in InP at Near Room Temperature| 1993
- 737
-
Energy Levels and Excitation Mechanisms of Yb3+ Ions in InP1-xAsx Alloys| 1993
- 743
-
Time Decay Study of the Er3+-Related Luminescence in In1-xGaxP| 1993
- 749
-
Er-4f Luminescence Excitation and Quenching Mechanisms in GaAs| 1993
- 755
-
Photoluminescence Study of the 779-meV Band in Silver-Doped Silicon| 1993
- 761
-
Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon| 1993
- 767
-
Lattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in Semiconductor| 1993
- 773
-
Photoluminescence from Silver-Related Defects in Silicon| 1993
- 779
-
Electronic Structure of Copper-Related Defects in Germanium| 1993
- 785
-
Thermodynamic Properties of Self-Interstitials in Silicon: An Experimental Investigation| 1993
- 791
-
Shallow Bound Pseudoacceptor States of Iron in Gallium Phosphide| 1993
- 797
-
An Optical Zeeman Study on Fe3+ in GaAs and InP| 1993
- 803
-
Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation| 1993
- 809
-
Electrical and Optical Properties of 3D- and 4D-Transition Metal Related Centers in Silicon| 1993
- 815
-
Nonlinear Zeeman Splitting and Electron-Phonon Coupling| 1993
- 821
-
Hydrogen-Gold-Related Deep Levels in Crystalline Silicon| 1993
- 827
-
In Search of Co-Acceptor Pairs in Highly Doped p-Si: A Mössbauer Spectroscopy Study| 1993
- 833
-
Studies of 3D Ions in III-V Materials by Thermally-Detected Absorption Spectroscopy-Problem of GaP:Cr| 1993
- 839
-
Characterization of Defects in Li-Diffused n-Type GaAs| 1993
- 845
-
Observation and Theory of the H2* Defect in Silicon| 1993
- 853
-
EPR Identification of Hydrogen Molecules in Bulk Silicon| 1993
- 861
-
Hydrogen Solubility and Defects in Silicon| 1993
- 867
-
Diffusion of Charged Hydrogen in Semiconductors| 1993
- 873
-
Metastable Defects in N-Type GaAs Related to Hydrogen| 1993
- 879
-
Interpretation of Large Attempt Frequencies in Dissociation of Thermal Donor-Hydrogen Complexes in Silicon| 1993
- 885
-
Isotope Shift for the Low Energy (63cm-1) Excitation of the Al-H Complex in Si: Evidence for a Hydrogen Wagging Mode| 1993
- 891
-
Spectroscopic Identification of a Transition Metal-H Complex in Silicon| 1993
- 897
-
Structural Study of Hydrogen Induced Platelet in Si and Ge by Transmission Electron Microscopy| 1993
- 903
-
Hydrogen Related Optical Centers in Radiation Damaged Silicon| 1993
- 909
-
EPR Experiments on Hydrogen-Implanted Silicon Crystals: Annealing Properties of Bond Center Hydrogen| 1993
- 915
-
Charge and Site-Change Dynamics of Muonium (Hydrogen) in Si| 1993
- 921
-
Photo-Induced Lattice Relaxation and Dissociation of a Hydrogen-Carbon Complex in Silicon| 1993
- 927
-
Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies| 1993
- 933
-
Depth Distribution of Diffused Hydrogen in n-Type GaAs| 1993
- 939
-
Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon| 1993
- 945
-
Deuterium Effusion from InP| 1993
- 951
-
Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling| 1993
- 957
-
Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline Silicon| 1993
- 963
-
The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C| 1993
- 969
-
A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon| 1993
- 975
-
Hydrostatic Pressure Investigations of Metastable Defect States| 1993
- 983
-
Vacancy in the EL2 and DX Centers Studied by Positron Annihilation| 1993
- 991
-
Theoretical Calculations of Antisite and Antisite-Like Defects in GaP| 1993
- 995
-
Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2| 1993
- 1001
-
Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs| 1993
- 1007
-
Ordering of the EL2 Defects in the Metastable State| 1993
- 1013
-
Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions| 1993
- 1019
-
Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs| 1993
- 1025
-
Photoexcited and Metastable States of DX Centers in Si Doped Alx Ga1-x As| 1993
- 1031
-
Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices| 1993
- 1035
-
Ab-Initio Calculation of the Hyperfine Fields for Deep A1 Donors in GaAs under Pressure| 1993
- 1041
-
Magneto-Optical and ODEPR Investigations of Silicon Doped AlxGa1-xAs| 1993
- 1047
-
First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices| 1993
- 1051
-
Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration| 1993
- 1057
-
The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in AlxGa1-xAs| 1993
- 1063
-
Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs| 1993
- 1069
-
Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2| 1993
- 1075
-
Pressure Induced *-Shallow - Deep A1 Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs| 1993
- 1081
-
Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP| 1993
- 1087
-
Kinetics of Electron Capture on DX Centers under High Pressure| 1993
- 1093
-
Static and Dynamic Absorption Measurements of the DX Center in AlxGa1-xAs| 1993
- 1099
-
Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy| 1993
- 1105
-
Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al.3Ga.7As by Mössbauer Spectroscopy| 1993
- 1111
-
Hole Capture by the DX Center in AlGaAs Schottky Barriers| 1993
- 1117
-
Energy Shifts Due to the Local Environment of DX Centers in Alx Ga1-x As:Si| 1993
- 1123
-
Evidence for Alloy Splitting of the Te DX State in AlxGa1-xAs| 1993
- 1129
-
Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As| 1993
- 1135
-
The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects| 1993
- 1141
-
Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.| 1993
- 1149
-
On the Electron Capture Kinetics of DX Centers in AlxGa1-xAs:Si| 1993
- 1155
-
Defect Interaction with the Double Donor 77Br in GaAs and InAs| 1993
- 1161
-
Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?| 1993
- 1167
-
The Metastable Si:(S + Cu) Defect| 1993
- 1173
-
The Structure of Au-Li and Pt-Li Complexes in Silicon| 1993
- 1179
-
The Configurational Change of a Metastable S-Cu Defect in Silicon| 1993
- 1185
-
A New Bistable Shallow Thermal Donor in Al-Doped Si| 1993
- 1191
-
Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon| 1993
- 1197
-
Metastability of the Ali-AlSi Pair in Silicon?| 1993
- 1203
-
DX-Like Centers in II-VI Diluted Magnetic Semiconductors| 1993
- 1209
-
Tunneling Study of Metastable Electron States Produced by Reconstructing Impurity Centers in PbTe:In| 1993
- 1215
-
Passivation and Reactivation of (H,P) Pairs in Si| 1993
- 1221
-
The Nitrogen Pair in Crystalline Silicon Studied by Ion Channeling| 1993
- 1227
-
Vacancies and {V,Hn} Complexes in Si: Stable Structures, Relative Stability, and Diffusion Properties| 1993
- 1233
-
The Nature of Trigonal Centers in Iron-Doped p-Type Silicon| 1993
- 1239
-
Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon| 1993
- 1245
-
Relative Stability of HT vs. H* and HT2 vs. H*2 in c-C, Si, Ge and α-Sn and Their Consequences| 1993
- 1251
-
On the Pairing between Indium and Carbon Atoms in Silicon| 1993
- 1257
-
Iron-Phosphorus Interaction in Si| 1993
- 1263
-
Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory| 1993
- 1269
-
Polarized Photoluminescence in Highly Si-Doped GaAs| 1993
- 1275
-
Phenomenon of Two-Step Alignment of VGaSnGa Complexes in GaAs under Uniaxial Pressure| 1993
- 1281
-
Photoexcitation of Defects Related to B in GaAs| 1993
- 1287
-
Magnetotunnelling through 1s- and 2p-Like Donor States in the Quantum Well of Resonant-Tunnelling Diodes| 1993
- 1293
-
Theoretical Study on the Electronic States of Dislocations and Dislocation Motion in Semiconductors| 1993
- 1299
-
Ab Initio Cluster Theory of Substitutional Oxygen in Silicon| 1993
- 1305
-
First-Principles Simulations of Vacancies and Antisites in InP| 1993
- 1311
-
Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs| 1993
- 1319
-
Scanning Tunneling Microscopy of Si Donors in GaAs| 1993
- 1325
-
X-Ray Triple Crystal Diffractometry of Structural Defects in SimGen Superlattices| 1993
- 1331
-
GIXA, a Novel Technique in Near-Surface Analysis| 1993
- 1337
-
Electrically Detected Electron Paramagnetic Resonance| 1993
- 1345
-
Magnetic Resonance Techniques for Excited State Spectroscopy of Defects in Silicon| 1993
- 1353
-
Optically Detected Cyclotron Resonance for Defect Characterization| 1993
- 1359
-
Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon| 1993
- 1365
-
Contactless Photothermal Ionization Spectroscopy of Shallow Defects in Semiconductors| 1993
- 1371
-
Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon| 1993
- 1375
-
Detection of Nonradiative Transition in P++ Ion Implanted p-Si by a Photoacoustic Spectroscopy| 1993
- 1381
-
DLTS of Recombination Centres in Semiconductors| 1993
- 1387
-
Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate| 1993
- 1391
-
A Model for Anharmonic Vibrational Excitation of <111>-Bond-Interstitial Impurities in Si and Ge Crystals| 1993
- 1397
-
Reactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: Si| 1993
- 1403
-
Defect Concentration Gradients at Semiconductor Junctions| 1993
- 1409
-
Diffusion of Mn-Atoms during the Growth of CdTe-MnTe Superlattices| 1993
- 1415
-
Particularities of the Zn Diffusion into InGaAsP from Spin-On Polymer Films| 1993
- 1421
-
U-Shaped Diffusion Profiles of Zn Atoms in GaAs by Electron Beam Doping| 1993
- 1427
-
Zinc Diffusion in Gallium Antimonide| 1993
- 1433
-
Evidence of Fast Diffusion of Plasma-Induced Centers in GaAs by Photo-Reflectance Spectroscopy| 1993
- 1439
-
Influence of Spatial Coulomb Potential Fluctuations on the Mobility in AlxGa1-xAs with DX Centers| 1993
- 1445
-
Impurity Self-Screening| 1993
- 1451
-
Defects and Recombination in Disordered Silicon| 1993
- 1459
-
Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon| 1993
- 1463
-
The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon| 1993
- 1469
-
Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si| 1993
- 1475
-
Electrical Characterization of Surface Defects on Porous p-Type Silicon| 1993
- 1481
-
Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface| 1993
- 1487
-
Defects in As-Prepared and Thermally Oxydized Porous Silicon| 1993
- 1493
-
Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon| 1993
- 1499
-
Luminescence Associated with Rod-Like Defects in Czochralski Silicon| 1993
- 1505
-
Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation| 1993
- 1511
-
Au-Related Deep States in the Presence of Extended Defects in N-Type Silicon| 1993
- 1517
-
Interaction between Supersaturated Transition Metals (Cu, Ni, Fe) and Extended Defects in CZ-Si| 1993
- 1523
-
Control of Size and Density of Stacking Fault in Silicon by Gold Diffusion| 1993
- 1529
-
On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon| 1993
- 1535
-
Implantation of Carbon in GaAs and Compensating Native Defects| 1993
- 1541
-
The Influence of Process-Induced Surface Defects on Luminescence and Transport Properties of Low-Dimensional Structures| 1993
- 1547
-
Deep Level Defects Detection in Degrading GaAs/AlGaAs Quantum Well Laser| 1993
- 1553
-
Influence of Electron Irradiation Induced Defects on the Current-Voltage Characteristics of a Resonant Tunneling Diode| 1993
- 1559
-
Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs| 1993
- 1565
-
Influence of Micro-Inhomogeneities on the Electron Mobility in Undoped N-Type LEC GaAs| 1993
- 1571
-
Dislocation-Induced Defect Levels in Silicon| 1993
- 1577
-
Structure Investigations of Heteroepitaxial CoSi2/Si Layers Formed by Ion Implantation| 1993
- 1583
-
Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation| 1993
- 1589
-
Relation between Dislocation Motion and Formation of Intrinsic Point Defects| 1993
- 1595
-
The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates| 1993
- 1599
-
Characterization of EL2 in Annealed LT-GaAs| 1993
- 1605
-
Theory of Dislocations in GaAs| 1993
- 1611
-
Electrical Properties of Organometallic Vapour Phase Epitaxial GaAs Grown on Si Substrates| 1993
- 1617
-
Strain and Relaxation in ZnSe/CdSe Superlattices| 1993
- 1623
-
Strain Induced Islanding of EuTe Epitaxial Films Observed by In-Situ-Rheed and STM Investigations| 1993
- 1629
-
Influence of Oxygen on External Phosphorus Gettering in Disordered Silicon Wafers| 1993
- 1635
-
Binding of Copper to Nanocavities in Silicon| 1993
- 1641
-
Phosphorus Diffusion Gettering of Gold in Silicon| 1993
- 1647
-
The Diffusion of Gold during the Gettering Influence of Phosphorus| 1993
- 1653
-
Effect of Interfacial Hydrogen in CoSi2/Si(100) Schottky-Barrier Contacts| 1993
- 1659
-
EPR Study of Platinum-Hydrogen Complexes in Silicon| 1993