Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes (Englisch)
Nationallizenz
- Neue Suche nach: Nguyen, Duy Minh
- Neue Suche nach: Huang, Runhua
- Neue Suche nach: Phung, Luong Viet
- Neue Suche nach: Planson, Dominique
- Neue Suche nach: Berthou, Maxime
- Neue Suche nach: Godignon, Philippe
- Neue Suche nach: Vergne, Bertrand
- Neue Suche nach: Brosselard, Pierre
In:
Materials Science Forum
;
740-742
;
609-612
;
2013
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
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Beteiligte:
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Erschienen in:Materials Science Forum ; 740-742 ; 609-612
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:25.01.2013
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 740-742
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy| 2013
- -3
-
Preface, Sponsors and Committees| 2013
- 7
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Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible| 2013
- 11
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SiC Single Crystal Growth on Dual Seed with Different Surface Properties| 2013
- 15
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Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth| 2013
- 19
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Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates| 2013
- 23
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Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution| 2013
- 27
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Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth| 2013
- 31
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Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent| 2013
- 35
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Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC| 2013
- 39
-
Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers| 2013
- 43
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On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method| 2013
- 43
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On Peculiarities of Defect Formation in 6H-SiC Bulk Single Crystals Grown by PVT MethodEmelchenko, G.A. / Zhokhov, A.A. / Tartakovskii, I.I. / Maksimov, A.A. / Steinman, E.A. et al. | 2013
- 48
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Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide| 2013
- 52
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Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy| 2013
- 56
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The Study of the Geometry and Growth Trend of Silicon Carbide Crystals| 2013
- 60
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Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method| 2013
- 65
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Growth of Large Diameter 4H-SiC by TSSG Technique| 2013
- 69
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SiC Sublimation Growth at Small Spacing between Source and Seed| 2013
- 73
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High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt| 2013
- 77
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The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT| 2013
- 81
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Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds| 2013
- 85
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Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles| 2013
- 91
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Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules| 2013
- 95
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Sublimation Growth of Bulk AlN Crystals on SiC Seeds| 2013
- 99
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Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds| 2013
- 103
-
AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates| 2013
- 107
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Effect of a Gas Pressure on the Growth Rate of AlN Layer| 2013
- 113
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Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)| 2013
- 117
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X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD| 2013
- 121
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Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation| 2013
- 125
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Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment| 2013
- 129
-
A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates| 2013
- 133
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Graphene-on-Porous-Silicon Carbide Structures| 2013
- 137
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Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC| 2013
- 141
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Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States| 2013
- 145
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High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces| 2013
- 149
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Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene| 2013
- 153
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Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC| 2013
- 157
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Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties| 2013
- 161
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Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas| 2013
- 167
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Fast Growth Rate Epitaxy by Chloride Precursors| 2013
- 173
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On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications| 2013
- 177
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Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport| 2013
- 181
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Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition| 2013
- 185
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Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates| 2013
- 189
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Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC| 2013
- 193
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The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle| 2013
- 197
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Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate| 2013
- 201
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Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC| 2013
- 205
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Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC| 2013
- 209
-
Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires| 2013
- 213
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Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC| 2013
- 217
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The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC| 2013
- 221
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Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance| 2013
- 221
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Uniformity and Morphology of 10 x 100mm 4^o Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device PerformanceDas, H. / Sunkari, S. / Oldham, T. / Rodgers, J. / Casady, J. et al. | 2013
- 225
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Surface Preparation of 4^o Off-Axis 4H-SiC Substrate for Epitaxial GrowthLi, X. / Hassan, J.U. / Kordina, O. / Janzen, E. / Henry, A. et al. | 2013
- 225
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Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth| 2013
- 229
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Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films| 2013
- 235
-
Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas| 2013
- 239
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10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor| 2013
- 239
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10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary ReactorDong, L. / Sun, G.S. / Yu, J. / Yan, G.G. / Zhao, W.S. / Wang, L. / Zhang, X.H. / Li, X.G. / Wang, Z.G. et al. | 2013
- 243
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Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method| 2013
- 247
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Low Temperature Homoepitaxial Growth of 4H-SiC on 4^o Off-Axis Carbon-Face Substrate Using BTMSM SourceLee, H.H. / Seo, H.S. / Lee, D.H. / Kim, C.H. / Kim, H.W. / Kim, H.J. et al. | 2013
- 247
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Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source| 2013
- 251
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Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers| 2013
- 257
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3C-SiC Heteroepitaxy on Hexagonal SiC Substrates| 2013
- 263
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3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer| 2013
- 267
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Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations| 2013
- 271
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Innovative 3C-SiC on SiC via Direct Wafer Bonding| 2013
- 275
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Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates| 2013
- 279
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Color Chart for Thin SiC Films Grown on Si Substrates| 2013
- 283
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Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation| 2013
- 287
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Plasma Treatment of 3C-SiC Surfaces| 2013
- 291
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Structural Characterization of 3C-SiC Grown Using Methyltrichlorosilane| 2013
- 295
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Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes| 2013
- 301
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Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress| 2013
- 306
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Elaboration of Core Si/Shell SiC Nanowires| 2013
- 311
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Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method| 2013
- 315
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Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy| 2013
- 319
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Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates| 2013
- 323
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Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors| 2013
- 327
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High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon| 2013
- 331
-
p-Doped SiC Growth on Diamond Substrate by VLS Transport| 2013
- 335
-
Polytype Inclusions in Cubic Silicon Carbide| 2013
- 339
-
Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy| 2013
- 347
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Photoluminescence of 8H-SiC| 2013
- 353
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P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons| 2013
- 357
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Raman Investigation of Aluminum-Doped 4H-SiC| 2013
- 361
-
An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals| 2013
- 365
-
An Extended EDMR Setup for SiC Defect Characterization| 2013
- 369
-
Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation| 2013
- 373
-
Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation| 2013
- 377
-
Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC| 2013
- 381
-
Diffusion Study of Chlorine in SiC by First Principles Calculations| 2013
- 385
-
Electron Paramagnetic Resonance Studies of Nb in 6H-SiC| 2013
- 389
-
EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure| 2013
- 393
-
Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)| 2013
- 397
-
Lateral Boron Distribution in Polycrystalline SiC Source Materials| 2013
- 401
-
Optical Characterization of Compensating Defects in Cubic SiC| 2013
- 405
-
Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC| 2013
- 409
-
Origins of Negative Fixed Charge in Wet Oxidation for SiC| 2013
- 413
-
Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals| 2013
- 417
-
Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals| 2013
- 421
-
Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals| 2013
- 425
-
Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States| 2013
- 431
-
Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD SixCy Thin Films| 2013
- 435
-
Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing| 2013
- 439
-
Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy| 2013
- 443
-
Temperature Dependence of Raman Scattering in 4H-SiC| 2013
- 447
-
The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples| 2013
- 451
-
The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films| 2013
- 455
-
Theoretical Study of N Incorporation Effect during SiC Oxidation| 2013
- 459
-
To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes| 2013
- 465
-
A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements| 2013
- 469
-
A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive Strain| 2013
- 473
-
Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors| 2013
- 477
-
Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC| 2013
- 481
-
Dislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman Spectroscopy| 2013
- 485
-
Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts| 2013
- 490
-
Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers| 2013
- 494
-
Effects of Growth Parameters on SiC/SiO2 Core/Shell Nanowires Radial Structures| 2013
- 498
-
Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures| 2013
- 502
-
Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon| 2013
- 506
-
Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face| 2013
- 510
-
Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching| 2013
- 514
-
XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing| 2013
- 521
-
Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi| 2013
- 525
-
Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation| 2013
- 529
-
Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study| 2013
- 533
-
Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets| 2013
- 537
-
Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets| 2013
- 541
-
Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping Technique| 2013
- 545
-
Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements| 2013
- 549
-
A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs| 2013
- 553
-
Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress| 2013
- 557
-
Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low Temperatures| 2013
- 561
-
Boron Diffusion in Silicon Carbide| 2013
- 565
-
Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region| 2013
- 569
-
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure| 2013
- 573
-
3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption| 2013
- 577
-
A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals| 2013
- 581
-
Aluminum Implantation in 4H-SiC: Physical and Electrical Properties| 2013
- 585
-
Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy| 2013
- 589
-
Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases| 2013
- 593
-
Complex Study of SiC Epitaxial Films| 2013
- 597
-
Contact-Free Micropipe Reactions in Silicon Carbide| 2013
- 601
-
Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures| 2013
- 605
-
Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates| 2013
- 609
-
Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes| 2013
- 613
-
Effects of Al Ion Implantation on 3C-SiC Crystal Structure| 2013
- 617
-
Electrical Characterisation of Epitaxially Grown 3C-SiC Films| 2013
- 621
-
Electrical Properties of MOS Structures on 4H-SiC (11-20) Face| 2013
- 625
-
Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions| 2013
- 629
-
Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4º Off-Axis 4H-SiC Substrates| 2013
- 629
-
Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4^o Off-Axis 4H-SiC SubstratesAigo, T. / Ito, W. / Tsuge, H. / Yashiro, H. / Katsuno, M. / Fujimoto, T. / Yano, T. et al. | 2013
- 633
-
Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC| 2013
- 637
-
Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers| 2013
- 641
-
Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study| 2013
- 645
-
Laplace Transform Deep Level Transient Spectroscopy Study of the EH6/7 Center| 2013
- 649
-
Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography| 2013
- 653
-
Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers| 2013
- 657
-
Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD| 2013
- 661
-
Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation| 2013
- 665
-
Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs| 2013
- 669
-
Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices| 2013
- 673
-
Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling| 2013
- 677
-
Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe| 2013
- 683
-
4H-SiC Trench MOSFET with Thick Bottom Oxide| 2013
- 687
-
An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier| 2013
- 691
-
Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures| 2013
- 695
-
Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices| 2013
- 699
-
A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs| 2013
- 703
-
Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability| 2013
- 707
-
Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs| 2013
- 711
-
Simulation and Optimization of 4H-SiC DMOSFET Power Transistors| 2013
- 715
-
Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces| 2013
- 723
-
Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface| 2013
- 727
-
Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing| 2013
- 733
-
Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure| 2013
- 737
-
Effect of Suppressing Reoxidation at SiO2/SiC Interface during Post-Oxidation Annealing in N2O with Al2O3 Capping Layer| 2013
- 741
-
Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing| 2013
- 745
-
Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability| 2013
- 749
-
Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interface| 2013
- 753
-
The Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface| 2013
- 757
-
Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps| 2013
- 761
-
Transition Metal Oxide-Diamond Interfaces for Electron Emission Applications| 2013
- 767
-
Al+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts| 2013
- 773
-
Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation| 2013
- 777
-
Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices| 2013
- 781
-
4H-SiC Trench Schottky Diodes for Next Generation Products| 2013
- 785
-
Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth| 2013
- 789
-
Effect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFET| 2013
- 793
-
Filling of Deep Trench by Epitaxial SiC Growth| 2013
- 797
-
Ni, NiSi2 and Si Secondary Ohmic Contacts on SiC with High Thermal Stability| 2013
- 801
-
Optimization of Copper Top-Side Metallization for High Performance SiC-Devices| 2013
- 805
-
Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure| 2013
- 809
-
Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures| 2013
- 813
-
Basic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC Wafer| 2013
- 817
-
Comparative Study on Dry Etching of alpha - and beta -SiC Nano-PillarsChoi, J.H. / Latu-Romain, L. / Bano, E. / Henry, A. / Lee, W.J. / Chevolleau, T. / Baron, T. et al. | 2013
- 817
-
Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars| 2013
- 821
-
First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications| 2013
- 825
-
ICP Etching of 4H-SiC Substrates| 2013
- 829
-
Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 ^oCYao, Y.Z. / Ishikawa, Y. / Sato, K. / Sugawara, Y. / Danno, K. / Suzuki, H. / Bessho, T. et al. | 2013
- 829
-
Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C| 2013
- 833
-
Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model| 2013
- 837
-
Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics| 2013
- 837
-
Influence of Contact Metallisation on the High Temperature Characteristics of High- kappa DielectricsFurnival, B.J.D. / Roy, S.K. / Wright, N.G. / Horsfall, A.B. et al. | 2013
- 841
-
Multi-Wire Electrical Discharge Slicing for Silicon Carbide| 2013
- 843
-
Slicing of Rotating SiC Ingot by Electric Discharge Machining| 2013
- 847
-
Study on Reactive Species in Catalyst-Referred Etching of 4H–SiC using Platinum and Hydrofluoric Acid| 2013
- 851
-
Pressureless Silver Sintering Die-Attach for SiC Power Devices| 2013
- 855
-
Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension| 2013
- 859
-
Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC| 2013
- 865
-
Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode| 2013
- 869
-
SiC High Power Devices – Challenges for Assembly and Thermal Management| 2013
- 873
-
Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts| 2013
- 877
-
Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes| 2013
- 881
-
Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes| 2013
- 887
-
Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC| 2013
- 891
-
Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures| 2013
- 895
-
16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications| 2013
- 899
-
SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV| 2013
- 903
-
Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime| 2013
- 907
-
Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates| 2013
- 907
-
Development of High-Voltage 4H-SiC PiN Diodes on 4^o and 8^o Off-Axis SubstratesOkamoto, D. / Tanaka, Y. / Matsumoto, N. / Mizukami, M. / Ota, C. / Takao, K. / Fukuda, K. / Okumura, H. et al. | 2013
- 911
-
Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport| 2013
- 915
-
900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET| 2013
- 921
-
Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events| 2013
- 925
-
A 69-mΩ 600-V-Class Hybrid JFET| 2013
- 925
-
A 69-m Omega 600-V-Class Hybrid JFETAkiyama, S. / Shimizu, H. / Yokoyama, N. / Tamaki, T. / Koido, S. / Tomizawa, Y. / Takahashi, T. / Kanazawa, T. et al. | 2013
- 929
-
Thermal Runaway Robustness of SiC VJFETs| 2013
- 934
-
Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise| 2013
- 938
-
Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET| 2013
- 942
-
Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET| 2013
- 946
-
Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET| 2013
- 950
-
On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs| 2013
- 954
-
15 kV IGBTs in 4H-SiC| 2013
- 958
-
Fabrication of a P-Channel SiC-IGBT with High Channel Mobility| 2013
- 962
-
Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs| 2013
- 966
-
High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications| 2013
- 970
-
1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules| 2013
- 970
-
1200 V, 3.3 m Omega SiC Bipolar Junction Transistor Power ModulesDomeij, M. / Konstantinov, A. / Buono, B. / Bast, M. / Eisele, R. / Wang, L. / Magnusson, A. et al. | 2013
- 974
-
Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT| 2013
- 978
-
15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors| 2013
- 982
-
Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar Inverters| 2013
- 986
-
Pulse Current Characterization of SiC GTO Thyristors with Etched JTE| 2013
- 990
-
Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors| 2013
- 994
-
Optimization of Holding Current in 4H-SiC Thyristors| 2013
- 998
-
Micromechanics Based on Silicon Carbide| 2013
- 1002
-
High Temperature SiC Sensor with an Isolated Package| 2013
- 1006
-
Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction| 2013
- 1010
-
Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC| 2013
- 1014
-
Selective 4H-SiC UV Detectors| 2013
- 1018
-
Full Simulation Study of UV Photodetectors Based on Pn Junctions in Silicon Carbide| 2013
- 1024
-
Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC| 2013
- 1028
-
Properties of Graphene Side Gate Transistors| 2013
- 1032
-
Investigation of Die Attach for SiC Power Device for 300^oC ApplicationsDrevin-Bazin, A. / Badawi, F. / Lacroix, F. / Barbot, J.F. et al. | 2013
- 1032
-
Investigation of Die Attach for SiC Power Device for 300°C Applications| 2013
- 1036
-
Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices| 2013
- 1040
-
Power Module Package Structure Capable of Surviving Greater Delta Tj Thermal CyclesTanimoto, S. / Tanisawa, H. / Watanabe, K. / Matsui, K. / Sato, S. et al. | 2013
- 1040
-
Power Module Package Structure Capable of Surviving Greater ΔTj Thermal Cycles| 2013
- 1044
-
Electromagnetic Interference in Silicon Carbide DC-DC Converters| 2013
- 1048
-
4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology| 2013