Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs (Englisch)
Nationallizenz
- Neue Suche nach: Woodend, Lee J.
- Neue Suche nach: Gammon, Peter M.
- Neue Suche nach: Shah, Vishal A.
- Neue Suche nach: Pérez-Tomás, Amador
- Neue Suche nach: Li, Fan
- Neue Suche nach: Hamilton, Dean P.
- Neue Suche nach: Myronov, Maksym
- Neue Suche nach: Mawby, Philip A.
In:
Materials Science Forum
;
897
;
557-560
;
2017
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
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Beteiligte:
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Erschienen in:Materials Science Forum ; 897 ; 557-560
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:15.05.2017
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 897
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping| 2017
- 7
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Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds| 2017
- -7
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Preface, Committees, Sponsors| 2017
- 11
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Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method| 2017
- 15
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3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers| 2017
- 19
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Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H2 Etching| 2017
- 24
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SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation| 2017
- 28
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Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth| 2017
- 32
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Solvent Design for High-Purity SiC Solution Growth| 2017
- 39
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Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate| 2017
- 43
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150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD| 2017
- 47
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Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect| 2017
- 51
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Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping| 2017
- 55
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High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices| 2017
- 59
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Improvement of Quality of Thick 4H-SiC Epilayers| 2017
- 63
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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters| 2017
- 67
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V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes| 2017
- 71
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Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device| 2017
- 75
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Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer| 2017
- 79
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Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers| 2017
- 83
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Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 1014 cm-3) 4H-SiC Epilayers| 2017
- 87
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Silicon Deposition on 3C-SiC Seeds of Different Orientations| 2017
- 91
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Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD| 2017
- 95
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A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors| 2017
- 99
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Susceptor Coating Materials Applicable for SiC Reactor Cleaning| 2017
- 107
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Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces| 2017
- 111
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Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy| 2017
- 115
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Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs| 2017
- 119
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Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers| 2017
- 123
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Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements| 2017
- 127
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Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy| 2017
- 131
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Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO2 Interface by First Principles Calculation| 2017
- 135
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Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al| 2017
- 139
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Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States| 2017
- 143
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Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique| 2017
- 147
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Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation| 2017
- 151
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Physical Characterisation of 3C-SiC(001)/SiO2 Interface Using XPS| 2017
- 155
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Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation| 2017
- 159
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Universal Parameter Evaluating SiO2/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy| 2017
- 163
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Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation| 2017
- 167
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The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors| 2017
- 173
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Three Dimensional Dislocation Analysis of Threading Mixed Dislocation Using Multi Directional Scanning Transmission Electron Microscopy| 2017
- 177
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Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)| 2017
- 181
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4H-SiC Defects Evolution by Thermal Processes| 2017
- 185
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Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation| 2017
- 189
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Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules| 2017
- 193
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Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging| 2017
- 197
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Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM| 2017
- 201
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On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC| 2017
- 205
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SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers| 2017
- 209
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Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers| 2017
- 214
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Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET| 2017
- 218
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Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress| 2017
- 222
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Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence| 2017
- 226
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Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization| 2017
- 233
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Creation and Functionalization of Defects in SiC by Proton Beam Writing| 2017
- 238
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Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers| 2017
- 242
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New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization| 2017
- 246
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Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes| 2017
- 250
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New Evidence for the Second Conduction Band in 4H SiC| 2017
- 254
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On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC| 2017
- 258
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Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination| 2017
- 262
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Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments| 2017
- 269
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Density Functional Theory on NV Center in 4H SiC| 2017
- 275
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Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates| 2017
- 279
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DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes| 2017
- 283
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Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate| 2017
- 287
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Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles| 2017
- 291
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Effect of Neutron Irradiation on SiC Etching in KOH Melt| 2017
- 295
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Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide| 2017
- 299
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Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells| 2017
- 303
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Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis| 2017
- 307
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Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals| 2017
- 311
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Effect of 3C-SiC Irradiation with 8 MeV Protons| 2017
- 315
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Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation| 2017
- 323
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Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties| 2017
- 327
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Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications| 2017
- 331
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Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process| 2017
- 335
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Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing| 2017
- 340
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Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium| 2017
- 344
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Combined N2O and Phosphorus Passivations for the 4H-SiC/SiO2 Interface with Oxide Grown at 1400°C| 2017
- 348
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Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal| 2017
- 352
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Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion| 2017
- 356
-
Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi1-xMgxO3-δ| 2017
- 363
-
Study of Etching Processes for SiC Defect Analysis| 2017
- 367
-
Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation| 2017
- 371
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4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask| 2017
- 375
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Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology| 2017
- 379
-
Fabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC Wafers| 2017
- 383
-
A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas| 2017
- 387
-
Demonstrating the Instability of SiC Ohmic Contacts and Drain Terminal Metallization Schemes Aged at 300 °C| 2017
- 391
-
Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC| 2017
- 395
-
Effect of Annealing on the Characteristics of Ti/Al Ohmic Contacts to p-Type 4H-SiC| 2017
- 399
-
Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing| 2017
- 403
-
Laser Assisted SiC Wafering Using COLD SPLIT| 2017
- 407
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Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs| 2017
- 411
-
An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC| 2017
- 419
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Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer| 2017
- 423
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10+ kV Implantation-Free 4H-SiC PiN Diodes| 2017
- 427
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4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density| 2017
- 431
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Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics| 2017
- 435
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6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation| 2017
- 439
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Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes| 2017
- 443
-
An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces| 2017
- 447
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Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons| 2017
- 451
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Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension| 2017
- 455
-
Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier| 2017
- 459
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Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures| 2017
- 463
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Lifetime Control in SiC PiN Diodes Using Radiation Defects| 2017
- 467
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The Effect of Incomplete Ionization on SiC Devices during High Speed Switching| 2017
- 471
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On the Influence of Active Area Design on the Performance of SiC JBS Diodes| 2017
- 477
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Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode| 2017
- 483
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0.97 mΩcm2/820 V 4H-SiC Super Junction V-Groove Trench MOSFET| 2017
- 489
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1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance| 2017
- 493
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3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode| 2017
- 497
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1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage| 2017
- 501
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Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs| 2017
- 505
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Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p+ Regions| 2017
- 509
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Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments| 2017
- 513
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Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors| 2017
- 517
-
Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)| 2017
- 521
-
Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed| 2017
- 525
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Short-Circuit Robustness Testing of SiC MOSFETs| 2017
- 529
-
Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices| 2017
- 533
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Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET| 2017
- 537
-
Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes| 2017
- 541
-
Analysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate Electrode| 2017
- 545
-
Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures| 2017
- 549
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Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET| 2017
- 553
-
Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD| 2017
- 557
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Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs| 2017
- 563
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Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)| 2017
- 567
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Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C| 2017
- 571
-
Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation| 2017
- 575
-
Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs| 2017
- 579
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Total Dose Effects on 4H-SiC Bipolar Junction Transistors| 2017
- 583
-
16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development| 2017
- 587
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Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor| 2017
- 591
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Capacitances in 4H-SiC TSI-VJFETs| 2017
- 595
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Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations| 2017
- 601
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Tuning Performance of Silicon Carbide Micro-Resonators| 2017
- 606
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Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing| 2017
- 610
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Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain| 2017
- 614
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Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes| 2017
- 618
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Implementation of 4H-SiC Pin-Diodes as Nearly Linear Temperature Sensors up to 800 K towards SiC Multi-Sensor Integration| 2017
- 622
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Optimization of 4H-SiC Photodiodes as Selective UV Sensors| 2017
- 626
-
Silicon Carbide Radiation Detectors for Medical Applications| 2017
- 630
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4H-SiC PIN Diode as High Temperature Multifunction Sensor| 2017
- 634
-
Localized Surface Plasmon on 6H SiC with Ag Nanoparticles| 2017
- 638
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Chemical Stability of Si-SiC Nanostructures under Physiological Conditions| 2017
- 642
-
Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates| 2017
- 649
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Performance Evaluation and Expected Challenges of Silicon Carbide Power MOSFETs for High Voltage Applications| 2017
- 655
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Challenges on Drive Circuit Design for Series-Connected SiC Power Transistors| 2017
- 661
-
Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications| 2017
- 665
-
Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET| 2017
- 669
-
4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics| 2017
- 673
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650V SiC Cascode: A Breakthrough for Wide-Bandgap Switches| 2017
- 677
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A Built-In High Temperature Half-Bridge Power Module with Low Stray Inductance and Low Thermal Resistance for In-Wheel Motor Application| 2017
- 681
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High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology| 2017
- 685
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High Frequency Power Supply with 3.3 kV SiC-MOSFETs for Accelerator Application| 2017
- 689
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Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC Element| 2017
- 693
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Switching Analysis for All-SiC Module| 2017
- 697
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SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack| 2017
- 701
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SiC Power Devices in Impedance Source Converters| 2017
- 707
-
Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE| 2017
- 711
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Thermal and Lattice Misfit Stress Relaxation in Growing AlN Crystal with Simultaneous Evaporation of SiC Substrate| 2017
- 715
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Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with Gan-on-SiC Hemts| 2017
- 719
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Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface| 2017
- 723
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Investigation of Direct Water Photoelectrolysis Process Using III-N Structures| 2017
- 727
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High Temperature Grown Graphene on SiC Studied by Raman and FTIR Spectroscopy| 2017
- 731
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CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut| 2017
- 735
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Nanostructuring of Graphene on Semi-Insulating SiC| 2017
- 739
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Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections| 2017
- 743
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High Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor Devices| 2017
- 747
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The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices| 2017
- 751
-
Numerical Study of Energy Capability of Si/SiC LDMOSFETs| 2017
- 755
-
Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects| 2017