Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films (Englisch)
Nationallizenz
- Neue Suche nach: Nakabayashi, Masashi
- Neue Suche nach: Ohyama, H.
- Neue Suche nach: Simoen, Eddy
- Neue Suche nach: Claeys, Cor
- Neue Suche nach: Tanaka, K.
- Neue Suche nach: Kobayashi, K.
- Neue Suche nach: Miyahara, K.
In:
Solid State Phenomena
;
82-84
;
471-476
;
2001
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films
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Beteiligte:
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Erschienen in:Solid State Phenomena ; 82-84 ; 471-476
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Verlag:
- Neue Suche nach: Trans Tech Publications
-
Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:30.11.2001
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 82-84
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- 1
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Silicon Wafer Requirements for ULSI Device Processing| 2001
- 9
-
Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing| 2001
- 17
-
On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals| 2001
- 25
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Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior| 2001
- 35
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The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions| 2001
- 41
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Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth| 2001
- 49
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Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers| 2001
- 57
-
Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies| 2001
- 63
-
Infrared Absorption Analysis of Nitrogen in Czochralski Silicon| 2001
- 69
-
Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers| 2001
- 75
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Optical Properties of Oxygen Agglomerates in Silicon| 2001
- 81
-
Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects| 2001
- 87
-
Silicon Isotope Shifts of the 648-cm-1 Infrared Absorption Line of Oxygen in Silicon| 2001
- 93
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Thermal Donors in Silicon Implanted with Rare Earth Impurities| 2001
- 99
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Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon| 2001
- 105
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Vibrational Modes of Oxygen Dimers in Germanium| 2001
- 111
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Oxygen Precipitation in Silicon Doped with Tin| 2001
- 115
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Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon| 2001
- 121
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Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon| 2001
- 127
-
Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing| 2001
- 133
-
Hydrogen Interaction with Transition Metals in Silicon, Studied by Electron Paramagnetic Resonance| 2001
- 139
-
Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon| 2001
- 145
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Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching| 2001
- 150
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Hydrogen-Related Defects in High-Resistivity Silicon| 2001
- 155
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Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon| 2001
- 163
-
Atomistic Study of Boron Clustering in Silicon| 2001
- 171
-
Self-Interstitial Kinetics and Transient Phenomena in Si Crystals| 2001
- 177
-
Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose| 2001
- 183
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Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles| 2001
- 189
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Incorporation, Diffusion and Agglomeration of Carbon in Silicon| 2001
- 195
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Suppression of Boron Transient Enhanced Diffusion by C Trapping| 2001
- 201
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Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling| 2001
- 207
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Room Temperature Point Defect Migration in Crystalline Si| 2001
- 213
-
Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy| 2001
- 219
-
The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon| 2001
- 225
-
Stress-Induced Redistribution of Point Defects in Silicon Device Structures| 2001
- 231
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Characterization of Interstitial-Related Bulk Defects in p- Silicon Substrates by Epitaxial Deposition| 2001
- 237
-
Monitoring of Defects in Thermal Oxides during Electrical Stress| 2001
- 243
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Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions| 2001
- 249
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A Study of the Conversion of the VO to the VO2 Defect in Heat-Treated Silicon under Stress| 2001
- 255
-
Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects| 2001
- 259
-
Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon| 2001
- 267
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Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?| 2001
- 273
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Void Shrinkage during Thermal Oxidation of Silicon| 2001
- 279
-
Gettering Induced by Helium Implantation: Application to a Device| 2001
- 285
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Defects Created by Helium Implantation at Different Temperatures in Silicon| 2001
- 291
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Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon| 2001
- 297
-
Gold Gettering by H+ or He++ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers| 2001
- 303
-
Influence of Depth in Helium Desorption from Cavities Induced by 3He Implantation in Silicon| 2001
- 309
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Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus| 2001
- 315
-
Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon| 2001
- 323
-
Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites| 2001
- 331
-
Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p+ Epitaxial Wafers| 2001
- 341
-
Copper-Defect and Copper-Impurity Interactions in Silicon| 2001
- 349
-
Efficiency of Intrinsic Gettering for Copper in Silicon| 2001
- 355
-
Nickel Gettering in Silicon: Role of Oxygen| 2001
- 361
-
Electrical Activity of Dislocations in Si Decorated by Ni| 2001
- 367
-
Comparison of Nickel and Iron Gettering in Cz Silicon Wafers| 2001
- 373
-
Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections| 2001
- 381
-
Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals| 2001
- 387
-
The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18μm Advanced CMOS Logic Process| 2001
- 393
-
Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers| 2001
- 399
-
Defect Engineering and Prevention of Impurity Gettering at RP/2 in Ion-Implanted Silicon| 2001
- 405
-
Gettering Technology Based on Porous Silicon| 2001
- 411
-
Platinum Silicide Precipitate Formation During Phosphorus Diffusion Gettering in Silicon| 2001
- 417
-
Impact of a Cooling Process on the Dopant Activity of Platinum in Silicon| 2001
- 425
-
Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon| 2001
- 431
-
Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown| 2001
- 441
-
Radiation-Induced Electronic Defect Levels in High-Resistivity Si Detectors| 2001
- 447
-
p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates| 2001
- 453
-
Radiation Damage in MOS Structures, Irradiated with High-Energy Heavy Ions and Fast Neutrons, with Regard to Charge DLTS and C-V Measurements| 2001
- 459
-
Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model| 2001
- 465
-
Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation| 2001
- 471
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Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films| 2001
- 477
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Proton Irradiation Effects on Standard and Oxygenated Silicon Diodes| 2001
- 485
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Existence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX Wafers| 2001
- 491
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Hydrogen-Related Phenomena in SOI Fabricated by Using H+-Ion Implantation| 2001
- 497
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Hydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen Slicing| 2001
- 503
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Properties of Silicon Film in a Silicon-on-Glass Structure| 2001
- 509
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Structural and Photoluminescence Properties of H+ Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen Slicing| 2001
- 515
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Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries| 2001
- 523
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Characterization of SiC Grown on Si(111) by Supersonic C60 Beams| 2001
- 529
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Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD| 2001
- 533
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Cavities in He-Implanted SiC| 2001
- 539
-
Study of Relaxed Si0.7Ge0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy| 2001
- 545
-
On the Properties of Divacancies in Si1-xGex| 2001
- 551
-
Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si1-xGex Structures Grown by Molecular Beam Epitaxy with Combined Sources| 2001
- 557
-
Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si1-xGex Alloy| 2001
- 565
-
Defect-Related Current Instabilities in InAs/GaAs and AlGaAs/GaAs Structures?| 2001
- 569
-
Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses| 2001
- 575
-
Defects in CdTe Induced by Powerful Laser Radiation| 2001
- 581
-
Phonon-Plasmon Interaction in Tunnelling GaAs/AlAs Superlattices Grown on (311) and (100) Substrates| 2001
- 587
-
Radiation-Stimulated Ordering Effect in CdS Crystals| 2001
- 593
-
The Laser-Stimulated Modification of the Surfaces of Polycrystalline CdTe Layers| 2001
- 601
-
Electroluminescence of Si Quantum Dots in MOS Structures| 2001
- 607
-
Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge+ Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing| 2001
- 613
-
Silicon Nanoclusters in Thermal Oxide Films on Silicon| 2001
- 617
-
Luminescence from Si Nanocrystals and Er3+ Ions Embedded in Resonant Cavities| 2001
- 623
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Temporal Characteristics of the Optical Storage Effect in Si:Er| 2001
- 629
-
Effect of Selective Doping on Photo- and Electroluminescence Efficiency in Si:Er Structures| 2001
- 637
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The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering| 2001
- 645
-
Defect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth Ions| 2001
- 651
-
Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping| 2001
- 657
-
Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon| 2001
- 663
-
Nanocrystal MOS Memories Obtained by LPCVD Deposition of Si Nanograins| 2001
- 669
-
Memory Effects in Single-Electron Nanostructures| 2001
- 675
-
Nanocrystal MOS with Silicon-Rich Oxide| 2001
- 681
-
Self-Orientation of Silicon Nanocrystals Created under Pulse Laser Impact in Stressed α-Si:H Films on Glass Substrates| 2001
- 687
-
Nucleation of Nanostructures from Surface Defects on Silicon| 2001
- 695
-
Crystalline Silicon for Solar Cells| 2001
- 701
-
Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells| 2001
- 707
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Oxygen Annealing Behavior in Multicrystalline Silicon| 2001
- 713
-
Three-Dimensional Emitter Based on Locally Enhanced Diffusion (TREBLE) Structure: Modeling and Formation| 2001
- 719
-
Effective Gettering Mechanisms in Solar Multicrystalline Materials| 2001
- 727
-
Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction| 2001
- 735
-
Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures| 2001
- 741
-
Lock-In IR-Thermography – A Novel Tool for Material and Device Characterization| 2001
- 747
-
Characterisation of Surface and Near-Surface Regions in High-Purity Cz Si| 2001
- 753
-
A Technique for Delineating Defects in Silicon| 2001
- 759
-
SEM Vision Periodic Defect Review and Characterization after Inter-Metal Dielectric Deposition| 2001
- 765
-
Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model| 2001
- 771
-
Evaluation of Effective Carrier Lifetime in Epitaxial Silicon Layers| 2001
- 777
-
Spatial Distribution of Strain and Phases in Si Nano-Indentation Analysed by Raman Mapping| 2001
- 783
-
Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)| 2001
- 789
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Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon| 2001
- 795
-
1D-ACAR Studies of As-Grown Impurity Centers in Silicon| 2001
- 801
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Characterization of Interfacial States at Silicon Bicrystals| 2001
- 807
-
Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current| 2001