Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon (Englisch)
Nationallizenz
- Neue Suche nach: Lichti, R.L.
- Neue Suche nach: Chow, K.H.
- Neue Suche nach: Cox, S.F.J.
- Neue Suche nach: Estle, T.L.
- Neue Suche nach: Hitti, B.
- Neue Suche nach: Schwab, C.
In:
Materials Science Forum
;
258-263
;
179-184
;
1997
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon
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Beteiligte:
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Erschienen in:Materials Science Forum ; 258-263 ; 179-184
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:11.12.1997
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 258-263
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs| 1997
- 11
-
Optically-Induced Defects in Si-H Nanoparticles| 1997
- 19
-
Defects and Doping in III-V Nitrides| 1997
- 27
-
A Programme for the Future?| 1997
- 35
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The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium| 1997
- 41
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Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium| 1997
- 47
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Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium| 1997
- 53
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DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive 111In Atoms in Ge| 1997
- 53
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DLTS combined with perturbed angular correlation (PAC) or radioactive ^1^1^1In atoms in GeZistl, C. / Sielemann, R. / Haesslein, H. / Gall, S. / Braeunig, D. / Bollmann, J. et al. | 1997
- 59
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Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC| 1997
- 65
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Localization of Nondegenerate Electrons at Random Potential of Charged Impurities| 1997
- 71
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Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge| 1997
- 77
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Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As| 1997
- 83
-
Defects in SiGe| 1997
- 91
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Acceptor States in Boron Doped SiGe Quantum Wells| 1997
- 97
-
Substitutional Carbon in Ge and Si1-xGex.| 1997
- 103
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Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge| 1997
- 109
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Optical Investigation of Ge-Rich Ge1-xSix (0≤ x ≤ 0.1) Alloys| 1997
- 115
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Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex| 1997
- 121
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Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays| 1997
- 127
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Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys| 1997
- 133
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Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching| 1997
- 139
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The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy| 1997
- 145
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Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect| 1997
- 151
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Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature| 1997
- 159
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Dislocation Activities in Bulk GeSi Crystals| 1997
- 165
-
Schottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTS| 1997
- 171
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Molecular-Dynamics Simulations of Microscopic Defects in Silicon| 1997
- 179
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Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon| 1997
- 185
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Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM| 1997
- 191
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Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage| 1997
- 197
-
Mechanism of Ultrasonic Enhanced Hydrogenation in Poly-Si Thin Films| 1997
- 203
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Hydrogen Molecules in Crystalline Silicon| 1997
- 211
-
Thermal Stability of Hydrogen Molecule in Crystalline Silicon| 1997
- 217
-
Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State| 1997
- 223
-
IR Studies of Si-H Bond-Bending Vibrational Modes in Si| 1997
- 229
-
Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere| 1997
- 235
-
Trapping Site of Hydrogen Molecule in Crystalline Silicon| 1997
- 241
-
Formation and Structure of Hydrogen Molecules in Crystalline Si| 1997
- 247
-
Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon| 1997
- 253
-
The Trapping of Hydrogen at Carbon Defects in Silicon| 1997
- 259
-
The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon| 1997
- 265
-
Interstitial Carbon-Hydrogen Defects in Silicon| 1997
- 271
-
Low-Temperature Migration of Hydrogen and Interaction with Oxygen| 1997
- 277
-
Anomalous Shift of the 1075 cm-1 Oxygen-Hydrogen Defect in Silicon| 1997
- 283
-
Vibrational Absorption from Oxygen-Hydrogen (Oi-H2) Complexes in Hydrogenated CZ Silicon| 1997
- 289
-
The I Centre: A Hydrogen Related Defect in Silicon| 1997
- 295
-
Theory of Gold-Hydrogen Complexes in Silicon| 1997
- 301
-
Electrically Active Silver-Hydrogen Complexes in Silicon| 1997
- 307
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Palladium-Hydrogen Related Complexes in Silicon| 1997
- 313
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Effects of Hydrogen Plasma on Dislocation Motion in Silicon| 1997
- 319
-
Hydrogenation of Copper Related Deep States in n-Type Si Containing Extended Defects| 1997
- 325
-
Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)| 1997
- 331
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Metastable Defects and Recombination in Hydrogenated Amorphous Silicon| 1997
- 337
-
Tracing Diffusion by Laplace Deep-Level Spectroscopy| 1997
- 341
-
Defects in AS-Grown Silicon and their Evolution During Heat Treatments| 1997
- 347
-
An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering| 1997
- 355
-
Temperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in Silicon| 1997
- 361
-
The Oxygen Dimer in Silicon: Some Experimental Observations| 1997
- 367
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Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C| 1997
- 373
-
High-Field EPR Spectroscopy of Thermal Donors in Silicon| 1997
- 379
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Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities| 1997
- 385
-
Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C| 1997
- 391
-
Local Vibrational Modes of Weakly Bound O-H Complexes in SI| 1997
- 399
-
Phonon Scattering in Heat-Treated Cz-Silicon| 1997
- 405
-
Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy| 1997
- 405
-
Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IT spectroscopyDe Gryse, O. / Clauws, P. / Vanhellemont, J. / Claeys, C. et al. | 1997
- 411
-
Influence of the Li Concentration on the Photoluminescence Spectra of Neutron-Irradiated Silicon:Passivation of Radiation Induced Centers| 1997
- 417
-
Electric-Dipole Spin Resonance of Be-Doped Silicon| 1997
- 423
-
Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification| 1997
- 429
-
Iron in p-Type Silicon: A Comprehensive Model| 1997
- 437
-
Moessbauer spectroscopy of Fe in silicon with the novel laser-ionized ^5^7mn^+ ion beam at ISOLDEWeyer, G. / Degroote, S. / Fanciulli, M. / Fedoseyev, V. N. / Langouche, G. / Mishin, V. I. / Van Bavel, A.-M. / Vantomme, A. et al. | 1997
- 437
-
Mössbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized 57Mn+ Ion Beam at Isolde| 1997
- 443
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Recombination-Enhanced Fe Atom Jump of Fe-Acceptor Pairs in Si| 1997
- 449
-
Precipitation of Iron in FZ and CZ Silicon| 1997
- 455
-
The Orthorhombic FeIn Complex in Silicon| 1997
- 461
-
Copper in Silicon: Quantitative Analysis of Internal and Proximity Gettering| 1997
- 467
-
A Study of the Copper-Pair Related Centers in Silicon| 1997
- 473
-
The Photoluminescence of Pt-Implanted Silicon| 1997
- 479
-
The identification of the Si:Au and Si:Pt 1S~3~/~2(~8)+ phonon-assisted Fano resonanceKleverman, M. / Olajos, J. / Tidlund, P. et al. | 1997
- 479
-
Identification of the Si:Au and Si:Pt 1S3/2(Г8)+Г Phonon-Assisted Fano Resonance| 1997
- 485
-
Silver-Related Donor Defect in Silicon| 1997
- 491
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Isolated Substitutional Silver and Silver-Induced Defects in Silicon: An Electron Paramagnetic Resonance Investigation| 1997
- 497
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Pseudo or Deep Donor Excitation Spectra in Silicon| 1997
- 503
-
Vacancies and Interstitial Atoms in eֿ-Irradiated Silicon| 1997
- 503
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Vacancies and interstitial atoms in electron-irradiated siliconZillgen, H. / Ehrhart, P. et al. | 1997
- 509
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Vacancy Aggregates in Silicon| 1997
- 515
-
Identification of VH in Silicon by EPR| 1997
- 521
-
Novel Luminescent Centres in Cadmium Doped Silicon| 1997
- 527
-
Defect Clusters in Silicon: Impact on the Performance of Large-Area Devices| 1997
- 535
-
Modeling of Self-Interstitial Clusters and their Formation Mechanism in Si| 1997
- 541
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Self-Interstitials in Irradiated Silicon| 1997
- 547
-
High Resolution EELS Study of Extended Defects in Silicon| 1997
- 553
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Electron Irradiation Effects in Silicon Thin Foils Under Ultra-High Vacuum Environment| 1997
- 559
-
Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon| 1997
- 565
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Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment| 1997
- 571
-
Fano Resonance in a Vibronic Sideband in Silicon| 1997
- 575
-
Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures| 1997
- 581
-
Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon| 1997
- 587
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Luminescence Centers in High-Energy Ion-Implanted Silicon| 1997
- 593
-
Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He4 Irradiation| 1997
- 599
-
Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H| 1997
- 605
-
Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon| 1997
- 611
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Implantation of Reactive and Unreactive Ions in Silicon| 1997
- 617
-
Photoluminescence Vibrational Spectroscopy of Defects Containing the Light Impurities Carbon and Oxygen in Silicon| 1997
- 623
-
Raman Scattering Measurements in Neutron-Irradiated Silicon| 1997
- 629
-
Recombination Centers in Electron Irradiated Si and GaAs| 1997
- 635
-
Study of a Li- and C-Related Center Formed at High Annealing Temperatures in Neutron-Irradiated FZ Silicon Doped with Li| 1997
- 641
-
The Influence of Accumulated Defects on the Lateral Spread of Implanted Ions| 1997
- 647
-
Structural Change and Relaxation Processes of Tetrahedral Point Defects| 1997
- 653
-
The Jahn-Teller Effect and the Structure of Monovacancies in Si, SiC and C| 1997
- 659
-
Transient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect and the Effect on Defect Reactions| 1997
- 665
-
Characterisation of Recombination Centres in Solar Cells by DLTS| 1997
- 671
-
Defect-Engineering Rad-Hard Detectors for the CERN LHC| 1997
- 677
-
Theory of 3d Transition Metal Defects in 3C-SiC| 1997
- 685
-
A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy| 1997
- 691
-
Thermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiC| 1997
- 697
-
Optical Absorption and Zeeman Study of 6H-SiC:Cr| 1997
- 703
-
High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC| 1997
- 709
-
Gas and Heat Treatment Effects on the Defect Structure of a-SiC:H Films| 1997
- 715
-
Capacitance Spectroscopy of Deep Centres in SiC| 1997
- 721
-
Native and Electron Irradiation Induced Defects in 6H-SiC| 1997
- 727
-
Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation| 1997
- 733
-
Vacancy-Type Defects in Proton-Irradiated SiC| 1997
- 739
-
Theoretical Studies on Defects in SiC| 1997
- 745
-
Formation and Relaxation of Hydrogen-Related Defects in the Subsurface Region of Diamond Films| 1997
- 751
-
Hydrogen and Hydrogen-Like Defects in Diamond| 1997
- 757
-
Fine Structure of the Boron Bound Exciton in Diamond| 1997
- 763
-
Investigation of Ion-Implanted Boron in Diamond| 1997
- 769
-
Isotopic Shifts of the N3 Optical Transition in Diamond| 1997
- 775
-
Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond| 1997
- 781
-
A First Principles Study of Interstitial Si in Diamond| 1997
- 787
-
Radiation Damage of Silicon and Diamond by High Energy Neutrons, Protons and α Particles| 1997
- 793
-
Study of Defects in Diamond Films by Electrical Measurements| 1997
- 799
-
Valence Controls and Codoping for Low-Resistivity n-Type Diamond by Ab Initio Molecular-Dynamics Simulation| 1997
- 805
-
Intrinsic Modulation Doping in InP-Based Heterostructures| 1997
- 813
-
Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures| 1997
- 819
-
Study of Iron-Related Defects in SI-InP by Positron Annihilation Spectroscopy| 1997
- 825
-
Homogeneity of Fe-Doped InP Wafers Using Optical Microprobes| 1997
- 831
-
Osmium Related Deep Levels in p-InP and their Interaction with Alpha Radiation| 1997
- 837
-
A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide| 1997
- 843
-
Alpha Radiation-Induced Deep Levels in p-InP| 1997
- 849
-
Site Stability, Diffusion, and Charge Dynamics for Muonium in GaAs| 1997
- 855
-
Structure and Reorientation of the SiAs-H and ZnGa-H Complexes in Gallium Arsenide| 1997
- 861
-
Ab Initio Study of the CAs Local Oscillator in Gallium Arsenide| 1997
- 867
-
Spectroscopy of Nitrogen-Related Centers in Gallium Arsenide| 1997
- 873
-
Atomic Configuration of Oxygen Negative-U Center in GaAs| 1997
- 879
-
Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers| 1997
- 885
-
Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs| 1997
- 893
-
Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide| 1997
- 899
-
Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs| 1997
- 905
-
Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation| 1997
- 911
-
Spectroscopic Investigation of Neutral Niobium in GaAs| 1997
- 917
-
Yb Luminescence Centres in MBE-Grown and Ion-Implanted GaAs| 1997
- 923
-
Arsenic Interstitial Pairs in GaAs| 1997
- 929
-
Electrical Properties of Low Temperature Grown GaAs| 1997
- 933
-
Traps Found in GaAs MESFETs: Properties Location and Detection| 1997
- 939
-
Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors| 1997
- 945
-
Creation of GaAs Antisites in GaAs by Transmutation of Radioactive 71AsAs to Stable 71GaAs| 1997
- 951
-
Defect Control in As-Rich GaAs| 1997
- 957
-
As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature| 1997
- 963
-
Electrically Detected Magnetic Resonance at Different Microwave Frequencies| 1997
- 969
-
Metastable Antisite Pair in GaAs| 1997
- 975
-
Theoretical Study of Antistructure Defects in GaAs| 1997
- 981
-
Study of Plastically Deformed Semiconductors by Means of Positron Annihilation| 1997
- 987
-
The Micro Structure of the EL2 Defect in GaAs - A Different Look to Former Spin Resonance Data| 1997
- 993
-
Detection and Identification of the EL2 Metastable in GaAs| 1997
- 993
-
Detection and Identification of the EL2 Metastable State in GaAsBourgoin, J. C. et al. | 1997
- 997
-
Defects in Thick Epitaxial GaAs Layers| 1997
- 1003
-
Effects of Copper Diffusion on the Native Defect EL2 in GaAs| 1997
- 1009
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EL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAs| 1997
- 1015
-
Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance| 1997
- 1021
-
ODMR Investigation of Proton Irradiated GaAs| 1997
- 1027
-
Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide| 1997
- 1033
-
Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs| 1997
- 1039
-
Defects in Neutron Irradiated, LEC Semi-Insulating GaAs| 1997
- 1045
-
Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs| 1997
- 1051
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Metastable Charge Recovery in Plasma-irradiated n-GaAsWada, K. / Nakanishi, H. et al. | 1997
- 1051
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Metastable Charge Recovery in Plasma-Irradiated η-GaAs| 1997
- 1057
-
Metastable Amorphous Structure in Ion Implanted GaAs| 1997
- 1063
-
Theory of Nitrogen-Hydrogen Complexes in GaP| 1997
- 1069
-
Photoluminescence, Optical Absorption, and EPR Studies of the Co2+-SP Pair Defect in GaP| 1997
- 1075
-
Resonance-Mode Phonon Replica in the Optical Spectra of Transition-Metal Impurities in GaP| 1997
- 1081
-
GaN Grown Using Trimethylgallium and Triethylgallium| 1997
- 1087
-
ODMR Studies of AS-Grown and Electron-Irradiated GaN and AlN| 1997
- 1087
-
ODMR Studies of As-grown and Electron-irradiated GaN And AINWatkins, G. D. / Linde, M. / Mason, P. W. / Przybylinska, H. / Bozdog, C. / Uftring, S. J. / Haerle, V. / Scholz, F. / Choyke, W. J. / Slack, G. A. et al. | 1997
- 1093
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Electrical and Optical Characterization of Defects in GaN Generated by Ion Implantation| 1997
- 1099
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Implantation Doping and Hydrogen Passivation of GaN| 1997
- 1105
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Electrically and Optically Detected Magnetic Resonance in GaN-Based LEDs| 1997
- 1113
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Donor-Acceptor Pair Transitions in GaN| 1997
- 1119
-
AB Initio Studies of Atomic-Scale Defects in GaN and AlN| 1997
- 1125
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Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers| 1997
- 1131
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Zeeman Study of the 0.9 eV Emission in AlN and GaN| 1997
- 1137
-
A First-Principles Study of Mg-Related Defects in GaN| 1997
- 1143
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Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN| 1997
- 1149
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On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN| 1997
- 1155
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Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy| 1997
- 1161
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GaN Doped with Sulfur| 1997
- 1167
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Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance| 1997
- 1173
-
Local Vibrational Modes at Transition-Metal Impurities in Hexagonal AlN and GaN Crystals| 1997
- 1179
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Local Vibrational Modes at AsN in Cubic GaN: Comparing Ab-Initio Calculations to a Semi-Empirical Model| 1997
- 1185
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A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations| 1997
- 1191
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Photoluminescence of Donor Acceptor Pair Transitions in Hexagonal and Cubic MBE-Grown GaN| 1997
- 1197
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Raman Scattering from Defects in GaN| 1997
- 1203
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Structural and Electrical Properties of Threading Dislocations in GaN| 1997
- 1211
-
Defects Analysis in Strained InAlAs and InGaAs Films Grown on (111)B InP Substrates| 1997
- 1217
-
Irradiation Induced Lattice Defects in In0.53Ga0.47As Pin Photodiodes| 1997
- 1223
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Acceptor-Hydrogen Interaction in InAs| 1997
- 1229
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Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN| 1997
- 1235
-
Effect of Neutron Irradiation on Ga-Based Semiconductors| 1997
- 1241
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Polaron Coupling for Sulphur Impurity in GaSb| 1997
- 1247
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Resonant Interaction Between Local Vibrational Modes and Extended Lattice Phonons in AlSb| 1997
- 1253
-
Defect Reactions in Low Temperature Electron Irradiated AlAs Investigated by Measurements of the Lattice Parameter| 1997
- 1259
-
Transition from Tunneling to Poole-Frenkel Type Transport in Aluminum-Nitride| 1997
- 1265
-
Growth Surface Dependence of Cathodoluminescence of Cubic Boron Nitride| 1997
- 1275
-
N-Vacancy Defects in c-BN and w-BN| 1997
- 1281
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Multiphonon-Assisted Tunnel Ionisation of Deep Impurities in High-Frequency Electric Field| 1997
- 1287
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Long-Range Lattice Relaxation for Donor Centers in Supercell Method| 1997
- 1293
-
Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of CAs in AlxGa1-xAs| 1997
- 1299
-
Plausible Evidence of Existence of Deep Acceptors in Si δ-Doped AlGaAs| 1997
- 1303
-
Magneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type AlxGa1-xAs| 1997
- 1309
-
Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance| 1997
- 1315
-
ODMR Investigations of Ge Acceptors in p-Type Al0.4Ga0.6As| 1997
- 1321
-
Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory| 1997
- 1329
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Degradation in II-VI Laser Diodes| 1997
- 1335
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Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy| 1997
- 1341
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Defect Structures in Heavily In-Doped II-VI Semiconductors| 1997
- 1347
-
The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS| 1997
- 1353
-
Experimental Evidence for the Two-Electron Nature of In-Related DX States in CdTe| 1997
- 1359
-
Nature of Dislocation-Related Deep Level Defects in CdS| 1997
- 1365
-
NMR Study of Carrier States and Trapping Complexes in the Transparent Conductor ZnO:MIII| 1997
- 1371
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Cathodoluminescence Study on the Hydrogenation of ZnO Luminescence| 1997
- 1377
-
Observation of Frenkel Pairs on Both Sublattices of Electron Irradiated ZnSe| 1997
- 1383
-
Interface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBE| 1997
- 1389
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Donor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted Boron| 1997
- 1395
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Determination of the Lattice Site of Nitrogen after Implantation into ZnSe| 1997
- 1401
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Charge Transfer at Ti Ions in ZnTe| 1997
- 1407
-
Bistable Centers in CdMnTeSe:In and CdMnTe:Ga Crystals Studied by Light-Induced Gratings| 1997
- 1413
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Deep Levels in Cd0.99Mn0.01Te:Ga| 1997
- 1419
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Vacancy-Type Defects in Electron and Proton Irradiated II-VI Compounds| 1997
- 1425
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UV Enhanced and Solar Blind Photodetectors Based on Large-Band-Gap Materials| 1997
- 1431
-
Lattice Relaxation of In Donors in CdF2| 1997
- 1437
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Shallow Electron Centres in CdF2:M3+ and Silver Halides| 1997
- 1443
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EPR Investigation of Metastable Donor States in CdF2:In, Ga| 1997
- 1449
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Photoinduced Magnetism in CdF2 with Bistable Donors: The Clue for the Negative U?| 1997
- 1455
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Evidence of Metastable Deep Acceptors in AgGaS2 from Time-Resolved Emission| 1997
- 1461
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A Positron Lifetime Study of Lattice Defects in Chalcopyrite Semiconductors| 1997
- 1467
-
Magnetooptical Characterization of CuIn(Ga)Se2| 1997
- 1473
-
Defects Spectroscopy in ß-Ga2O3| 1997
- 1479
-
Bistability of Oxygen Vacancy in Silicon Dioxide| 1997
- 1485
-
Energy Transfer Processes at Erbium Ions in Silicon| 1997
- 1491
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Energy Transfer Rate Between Erbium 4ƒ Shell and Si Host| 1997
- 1491
-
Energy Transfer Rate Between Erbium 4f Shell and Si HostTaguchi, A. / Takahei, K. / Matsuoka, M. / Tohno, S. et al. | 1997
- 1497
-
Photoluminescence Study of Erbium in Silicon with a Free-Electron Laser| 1997
- 1503
-
Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C| 1997
- 1509
-
Photo- and Electroluminescence of Erbium-Doped Silicon| 1997
- 1515
-
Donor Centers in Er-Implanted Silicon| 1997
- 1521
-
Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped Silicon| 1997
- 1527
-
Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures| 1997