Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD (Englisch)
Nationallizenz
- Neue Suche nach: Shimizu, Hideki
- Neue Suche nach: Aoyama, Yosuke
In:
Materials Science Forum
;
527-529
;
299-302
;
2006
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
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Beteiligte:
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Erschienen in:Materials Science Forum ; 527-529 ; 299-302
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:15.10.2006
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 527-529
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Reduction of Dislocations in the Bulk Growth of SiC Crystals| 2006
- 9
-
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals| 2006
- 15
-
Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters| 2006
- 21
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Halide-CVD Growth of Bulk SiC Crystals| 2006
- 27
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Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC| 2006
- 31
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Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates| 2006
- 35
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Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds| 2006
- 39
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Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)| 2006
- 43
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Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals| 2006
- 47
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Growth of SiC Boules with Low Boron Concentration| 2006
- 51
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Resistivity Distribution in Undoped 6H-SiC Boules and Wafers| 2006
- 55
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The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source| 2006
- 59
-
A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC| 2006
- 63
-
In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging| 2006
- 67
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Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals| 2006
- 71
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Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding| 2006
- 75
-
Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth| 2006
- 79
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Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC| 2006
- 83
-
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design| 2006
- 87
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Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth| 2006
- 91
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The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method| 2006
- 95
-
Polytype Control in 6H-SiC Grown via Sublimation Method| 2006
- 99
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Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT MethodLatu-Romain, L. / Chaussende, D. / Balloud, C. / Juillaguet, S. / Rapenne, L. / Pernot, E. / Camassel, J. / Pons, M. / Madar, R. et al. | 2006
- 99
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Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method| 2006
- 103
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Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals| 2006
- 107
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SiC HTCVD Simulation Modified by Sublimation Etching| 2006
- 111
-
Gas Fed Top-Seeded Solution Growth of Silicon Carbide| 2006
- 115
-
Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution| 2006
- 119
-
Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique| 2006
- 123
-
Growth of Cubic Silicon Carbide Crystals from Solution| 2006
- 129
-
Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling| 2006
- 135
-
Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs| 2006
- 141
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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices| 2006
- 147
-
Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers| 2006
- 153
-
4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness| 2006
- 159
-
SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers| 2006
- 163
-
Epitaxial Layers Grown with HCI Addition: A Comparison with the Standard ProcessLa Via, F. / Galvagno, G. / Firrincieli, A. / Roccaforte, F. / Di Franco, S. / Ruggiero, A. / Barbera, M. / Reitano, R. / Musumeci, P. / Calcagno, L. et al. | 2006
- 163
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Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process| 2006
- 167
-
Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor| 2006
- 171
-
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon Precursor| 2006
- 175
-
Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor| 2006
- 179
-
SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor| 2006
- 183
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Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates| 2006
- 187
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High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD| 2006
- 191
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Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition| 2006
- 195
-
Highly Uniform SiC Epitaxy for MESFET Fabrication| 2006
- 199
-
Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization| 2006
- 203
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High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources| 2006
- 207
-
Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates| 2006
- 211
-
Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena| 2006
- 215
-
Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property| 2006
- 219
-
Epitaxial Growth of 4H-SiC on 4^o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVDWada, K. / Kimoto, T. / Nishikawa, K. / Matsunami, H. et al. | 2006
- 219
-
Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD| 2006
- 223
-
Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition| 2006
- 227
-
Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC| 2006
- 231
-
Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy| 2006
- 235
-
Ab Initio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) Surface| 2006
- 239
-
Thick Epitaxial Layers on 4^o Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kVHecht, C. / Thomas, B. / Bartsch, W. et al. | 2006
- 239
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Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV| 2006
- 243
-
Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers| 2006
- 247
-
Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers| 2006
- 251
-
SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology| 2006
- 255
-
CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates| 2006
- 259
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Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask| 2006
- 263
-
6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method| 2006
- 263
-
6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1^o-Off Substrate by Closed-Space Sublimation MethodKawai, Y. / Maeda, T. / Nakamura, Y. / Sakurai, Y. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. / Yoshimoto, M. / Furusho, T. et al. | 2006
- 267
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Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace| 2006
- 271
-
Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis α-SiC (0001) at Low Temperature| 2006
- 271
-
Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis alpha-SiC (0001) at Low TemperatureSoueidan, M. / Ferro, G. / Cauwet, F. / Mollet, L. / Jacquier, C. / Younes, G. / Monteil, Y. et al. | 2006
- 275
-
Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts| 2006
- 279
-
Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas| 2006
- 283
-
Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates| 2006
- 287
-
Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism| 2006
- 291
-
‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC| 2006
- 295
-
Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification| 2006
- 299
-
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD| 2006
- 303
-
Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor| 2006
- 307
-
Growth of 3C-SiC on Si Molds for MEMS Applications| 2006
- 311
-
Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition| 2006
- 315
-
Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures| 2006
- 321
-
Theory of Dislocations in SiC: The Effect of Charge on Kink Migration| 2006
- 327
-
Structure of Carrot Defects in 4H-SiC Epilayers| 2006
- 333
-
Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy| 2006
- 339
-
Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy| 2006
- 343
-
Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals| 2006
- 347
-
Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC| 2006
- 351
-
Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes| 2006
- 355
-
Silicon Carbide: A Playground for 1D-Modulation Electronics| 2006
- 359
-
Peierls Barriers and Core Properties of Partial Dislocations in SiC| 2006
- 363
-
Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes| 2006
- 367
-
Recombination Behavior of Stacking Faults in SiC p-i-n DiodesMaximenko, S. I. / Pirouz, P. / Sudarshan, T. S. et al. | 2006
- 367
-
Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes| 2006
- 371
-
Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers| 2006
- 375
-
Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping| 2006
- 379
-
Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction| 2006
- 383
-
Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes| 2006
- 387
-
Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures| 2006
- 391
-
Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method| 2006
- 395
-
Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface| 2006
- 399
-
Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films| 2006
- 403
-
Structure of “Star” Defect in 4H-SiC Substrates and Epilayers| 2006
- 407
-
Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal| 2006
- 411
-
Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers| 2006
- 415
-
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers| 2006
- 419
-
Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?| 2006
- 423
-
3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method| 2006
- 427
-
Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs| 2006
- 431
-
Structural Defects and Critical Electric Field in 3C-SiC| 2006
- 435
-
Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy| 2006
- 439
-
Open Core Dislocations and Surface Energy of SiC| 2006
- 443
-
Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates| 2006
- 447
-
A New Method of Mapping and Counting Micropipes in SiC Wafers| 2006
- 451
-
Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry| 2006
- 455
-
Optical Studies of Deep Centers in Semi-Insulating SiC| 2006
- 461
-
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques| 2006
- 465
-
High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight| 2006
- 469
-
Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals| 2006
- 473
-
Origin of the Up-Conversion Process in 4H SiC| 2006
- 477
-
A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC| 2006
- 481
-
Investigation of the Displacement Threshold of Si in 4H SiC| 2006
- 485
-
Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy| 2006
- 489
-
Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC| 2006
- 493
-
Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers| 2006
- 497
-
Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition| 2006
- 501
-
Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy| 2006
- 505
-
Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates| 2006
- 509
-
Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy| 2006
- 513
-
Quenching Photoconductivity and Photoelectric Memory in 6H-SiC| 2006
- 517
-
Deep Level Point Defects in Semi-Insulating SiC| 2006
- 523
-
Divacancy and Its Identification: Theory| 2006
- 527
-
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC| 2006
- 531
-
Thermal Evolution of Defects in Semi-Insulating 4H SiC| 2006
- 535
-
Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study| 2006
- 539
-
Signature of the Negative Carbon Vacancy-Antisite Complex| 2006
- 543
-
Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC| 2006
- 547
-
Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes| 2006
- 551
-
Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC| 2006
- 555
-
Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance| 2006
- 559
-
Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC| 2006
- 563
-
Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC| 2006
- 567
-
Identification of Deep Level Defects in SiC Bipolar Junction Transistors| 2006
- 571
-
Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance| 2006
- 575
-
Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy| 2006
- 579
-
Electronic Raman Studies of Shallow Donors in Silicon Carbide| 2006
- 585
-
Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC| 2006
- 589
-
Photoluminescence of Phosphorus Doped SiCHenry, A. / Janzen, E. et al. | 2006
- 589
-
Photoluminescence of Phosphorous Doped SiC| 2006
- 593
-
Shallow P Donors in 3C-, 4H- and 6H-SiC| 2006
- 597
-
Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping ConcentrationRao, S. / Chow, T. P. / Bhat, I. B. et al. | 2006
- 597
-
Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration| 2006
- 601
-
Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC| 2006
- 605
-
A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers| 2006
- 609
-
New Aspects in n-type Doping of SiC with Phosphorus| 2006
- 613
-
Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates| 2006
- 617
-
Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC| 2006
- 621
-
Kinetic Mechanisms for the Deactivation of Nitrogen in SiC| 2006
- 625
-
Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition| 2006
- 629
-
Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC| 2006
- 633
-
Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped alpha-SiC Substrates Grown by the M-PVT MethodContreras, S. / Zielinski, M. / Konczewicz, L. / Blanc, C. / Juillaguet, S. / Muller, R. / Kunecke, U. / Wellmann, P. J. / Camassel, J. et al. | 2006
- 633
-
Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method| 2006
- 637
-
In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates| 2006
- 641
-
Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes| 2006
- 647
-
The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC| 2006
- 651
-
Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC| 2006
- 655
-
Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?| 2006
- 659
-
Europium Induced Deep Levels in Hexagonal Silicon Carbide| 2006
- 663
-
Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb3+, Dy3+ and Eu3+) a-SiC Thin Films Prepared by rf Magnetron Sputtering| 2006
- 667
-
Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization| 2006
- 673
-
Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface| 2006
- 677
-
SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)| 2006
- 681
-
Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface Alloy| 2006
- 685
-
Low Energy Ion Modification of 3C-SiC Surfaces| 2006
- 689
-
Phonons in SiC from INS, IXS, and Ab-Initio Calculations| 2006
- 695
-
Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition| 2006
- 699
-
Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals| 2006
- 703
-
Thermal Lens Technique for the Determination of SiC Thermo-Optical Properties| 2006
- 707
-
Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC| 2006
- 711
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Characterization of SiC Wafers by Photoluminescence Mapping| 2006
- 717
-
Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide| 2006
- 721
-
Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging| 2006
- 725
-
SiC Substrate Doping Profiles Using Commercial Optical Scanners| 2006
- 729
-
Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping| 2006
- 733
-
Microwave Dielectric Loss Characterization of Silicon Carbide Wafers| 2006
- 739
-
Columnar Pore Growth in n-Type 6H SiC| 2006
- 743
-
A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC| 2006
- 747
-
Brillouin Spectra of Porous p-Type 6H-SiC| 2006
- 751
-
Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications| 2006
- 755
-
Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD| 2006
- 759
-
Sol-Gel Silicon Carbide for Photonic Applications| 2006
- 763
-
Formation, Morphology and Optical Properties of SiC Nanopowder| 2006
- 767
-
A Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD Reactor| 2006
- 771
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Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor| 2006
- 775
-
Thermodynamic Analysis of Synthetic Potentialities of the nSiC + SiO2 Starting System: SiC Gas-Phase Transport via Si(g) and CO(g)| 2006
- 781
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Ion Implantation Processing and Related Effects in SiC| 2006
- 787
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Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices| 2006
- 791
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Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures| 2006
- 795
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Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC Layers| 2006
- 799
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Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)| 2006
- 803
-
Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment| 2006
- 807
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Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing| 2006
- 811
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Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes| 2006
- 815
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Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient| 2006
- 819
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Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor| 2006
- 823
-
Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes| 2006
- 827
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Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modelling of Resistivity MeasurementsRambach, M. / Frey, L. / Bauer, A. J. / Ryssel, H. et al. | 2006
- 827
-
Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements| 2006
- 831
-
Variations in the Effects of Implanting Al at Different Concentrations into SiC| 2006
- 835
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Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing| 2006
- 839
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Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD| 2006
- 843
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Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes| 2006
- 847
-
Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence| 2006
- 851
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High Dose High Temperature Ion Implantation of Ge into 4H-SiC| 2006
- 855
-
Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences| 2006
- 859
-
An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts| 2006
- 863
-
Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC| 2006
- 867
-
Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation| 2006
- 871
-
Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing| 2006
- 875
-
Die Bonding Issues on Silicon Carbide Diodes| 2006
- 879
-
Composite Ohmic Contacts to SiC| 2006
- 883
-
Tantalum-Ruthenium Diffusion Barriers for Contacts to SiC| 2006
- 887
-
Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices| 2006
- 891
-
Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies| 2006
- 895
-
Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC| 2006
- 899
-
Ohmic Contacts on p-Type SiC Using Al/C Films| 2006
- 903
-
Ti/AlNi/W and Ti/Ni2Si/W Ohmic Contacts to P-Type SiC| 2006
- 907
-
Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes| 2006
- 911
-
A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC| 2006
- 915
-
Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation| 2006
- 919
-
Diffusion Welding Techniques for Power SiC Schottky Packaging| 2006
- 923
-
Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC| 2006
- 927
-
Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes| 2006
- 931
-
High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown| 2006
- 935
-
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances| 2006
- 949
-
Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface| 2006
- 955
-
Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics| 2006
- 961
-
High Channel Mobility 4H-SiC MOSFETs| 2006
- 967
-
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal| 2006
- 967
-
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO AnnealDas, M. K. / Hull, B. A. / Krishnaswami, S. / Husna, F. / Haney, S. / Lelis, A. J. / Scozzie, C. J. / Scofield, J. D. et al. | 2006
- 971
-
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide| 2006
- 975
-
Investigation of SiO2-SiC Interface by High-Resolution Transmission Electron Microscope| 2006
- 979
-
Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient| 2006
- 983
-
Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC| 2006
- 987
-
Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing| 2006
- 991
-
Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces| 2006
- 995
-
Process-Dependent Charges and Traps in Dielectrics on SiC| 2006
- 999
-
Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC| 2006
- 1003
-
Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces| 2006
- 1007
-
On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices| 2006
- 1011
-
Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination| 2006
- 1015
-
Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study| 2006
- 1019
-
Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?| 2006
- 1023
-
Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces| 2006
- 1027
-
Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces| 2006
- 1031
-
Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer| 2006
- 1035
-
Fast Non-Contact Dielectric Characterization for SiC MOS Processing| 2006
- 1039
-
High Temperature Reliability of SiC n-MOS Devices up to 630 ^oCGhosh, R. N. / Loloee, R. / Isaacs-Smith, T. / Williams, J. R. et al. | 2006
- 1039
-
High Temperature Reliability of SiC n-MOS Devices up to 630 °C| 2006
- 1043
-
High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1^o) Off-AngleFukuda, K. / Kato, M. / Harada, S. / Kojima, K. et al. | 2006
- 1043
-
High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle| 2006
- 1047
-
PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces| 2006
- 1051
-
Process Optimisation for <11-20> 4H-SiC MOSFET Applications| 2006
- 1051
-
Process Optimisation for <11-20> 4H-SiC MOSFET ApplicationsBlanc, C. / Tournier, D. / Godignon, P. / Brink, D. J. / Souliere, V. / Camassel, J. et al. | 2006
- 1055
-
Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2| 2006
- 1059
-
Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion| 2006
- 1063
-
Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs| 2006