Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography (Englisch)
Nationallizenz
- Neue Suche nach: Peng, Hong Yu
- Neue Suche nach: Chen, Ze Yu
- Neue Suche nach: Liu, Yafei
- Neue Suche nach: Cheng, Qianyu
- Neue Suche nach: Hu, Shan Shan
- Neue Suche nach: Huang, Xian Rong
- Neue Suche nach: Assoufid, Lahsen
- Neue Suche nach: Raghothamachar, Balaji
- Neue Suche nach: Dudley, Michael
In:
Materials Science Forum
;
1062
;
356-360
;
2022
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography
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Beteiligte:
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Erschienen in:Materials Science Forum ; 1062 ; 356-360
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Verlag:
- Neue Suche nach: Trans Tech Publications Ltd
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Erscheinungsdatum:30.06.2022
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 1062
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- 8
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- -11
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Preface| 2022
- 13
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- 18
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- 23
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- 28
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- 33
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- 38
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- 44
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Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers| 2022
- 49
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- 54
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- 59
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- 64
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- 69
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- 74
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Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding| 2022
- 79
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In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry| 2022
- 84
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- 94
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- 99
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Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy| 2022
- 104
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Review of Sublimation Growth of SiC Bulk Crystals| 2022
- 113
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Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers| 2022
- 119
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Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < 1200°C for Photonic Applications| 2022
- 125
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- 131
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150 mm SiC Engineered Substrates for High-Voltage Power Devices| 2022
- 136
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- 140
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Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material| 2022
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Opening through 200 mm Silicon Carbide Epitaxy| 2022
- 155
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Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing| 2022
- 160
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Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry| 2022
- 165
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Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers| 2022
- 170
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Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC| 2022
- 175
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Polish Scratch Simulation vs. Polish Tool Type| 2022
- 180
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Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics| 2022
- 185
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Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC| 2022
- 190
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Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment| 2022
- 195
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The Development of Monolithic Silicon Carbide Intracortical Neural Interfaces for Long-Term Human Implantation| 2022
- 204
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Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing| 2022
- 209
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A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion| 2022
- 214
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Multiscale Simulations of Plasma Etching in Silicon Carbide Structures| 2022
- 219
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Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC| 2022
- 224
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Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation| 2022
- 229
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Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing| 2022
- 235
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Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap| 2022
- 241
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Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies| 2022
- 246
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Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing| 2022
- 253
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Identification of High Resolution Transient Thermal Network Model for Power Module Packages| 2022
- 258
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Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends| 2022
- 263
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Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology| 2022
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- 273
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- 278
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- 283
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- 351
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- 356
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Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography| 2022
- 361
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- 366
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Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers| 2022
- 371
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- 570
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