HREM and DLTS of Σ37(610) and Σ29(520 )[001] Tilt Grain Boundaries in Ge Bicrystals (Englisch)
Nationallizenz
- Neue Suche nach: Bochkareva, N.I.
- Neue Suche nach: Heydenreich, J.
- Neue Suche nach: Ruvimov, S.
- Neue Suche nach: Scholz, R.
- Neue Suche nach: Scheerschmidt, K.
- Neue Suche nach: Sorokin, L.M.
In:
Solid State Phenomena
;
32-33
;
565-570
;
1993
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:HREM and DLTS of Σ37(610) and Σ29(520 )[001] Tilt Grain Boundaries in Ge Bicrystals
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Beteiligte:
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Erschienen in:Solid State Phenomena ; 32-33 ; 565-570
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:12.12.1993
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 32-33
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- 1
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ULSI Technology - a Complex Device Manufacturing Process| 1993
- 11
-
Semiconductor Isotope Engineering| 1993
- 21
-
Crystalline Silicon for Solar Cells| 1993
- 27
-
Light-Emitting Porous Silicon: A Defective Quantum Sponge Structure?| 1993
- 39
-
Semiconducting Silicide-Silicon Heterostructures| 1993
- 51
-
What Local-Density Calculations Can Teach about Semiconductor Surfaces, Interfaces and Defects| 1993
- 57
-
Mechanisms of Transition Metal Gettering in Silicon| 1993
- 71
-
Gettering in Silicon under Vacancy Generation Conditions| 1993
- 77
-
Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers| 1993
- 83
-
Defect Engineering in Erbium-Doped Silicon Structure Technology| 1993
- 89
-
PN Junction Formation by Two Steps Annealing| 1993
- 93
-
Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions| 1993
- 99
-
Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile| 1993
- 105
-
On the Interaction of Transition Metals with Silicon Grain Boundaries| 1993
- 111
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Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma| 1993
- 117
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Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE| 1993
- 123
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Misfit Strain Engineering in Heteroepitaxial Structures| 1993
- 129
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Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures| 1993
- 141
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Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)| 1993
- 143
-
Properties of Hydrogen, Oxygen and Carbon in Si| 1993
- 155
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Solubility of Hydrogen in Silicon at High Temperatures| 1993
- 161
-
Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C| 1993
- 167
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Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature| 1993
- 173
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Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content| 1993
- 181
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New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon| 1993
- 191
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Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface| 1993
- 197
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The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD| 1993
- 203
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Annealing Properties of N-Doped Cz-Si Crystals| 1993
- 207
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Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study| 1993
- 213
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Formation and Properties of Tetranuclear Clusters of Manganese in Silicon| 1993
- 219
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EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon| 1993
- 225
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Investigation of Deep Levels and Carrier Dynamics in SiC Films| 1993
- 231
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Process-Induced Defects in Silicon Technology| 1993
- 247
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Lattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics| 1993
- 253
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Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide| 1993
- 259
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Dopant Migration Caused by Point Defect Gradients| 1993
- 269
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Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory| 1993
- 273
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Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon| 1993
- 279
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Electric-Dipole Spin Resonance on Extended Defects in Silicon| 1993
- 291
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Luminescence of Dislocations in SiGe/Si Structures| 1993
- 303
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On the Nature of Dislocation Luminescence in Si and Ge| 1993
- 309
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Defect Electrical Activity Study Using a Si(Ge) Heteroepitaxial Structure| 1993
- 319
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Properties of Dislocations and Point Defects in Fz-Si| 1993
- 325
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Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures| 1993
- 333
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Experimental Study of Anomalous Dislocation Kinks Drift in Germanium Single Crystals| 1993
- 339
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Cu Precipitation in Strained and Relaxing GexSi1-x Heteroepitaxial Layers| 1993
- 345
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Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge Heterostructures| 1993
- 353
-
The Influence of Oxidation Induced Stacking Faults on Electrical Parameters of a CCD Device| 1993
- 359
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Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon| 1993
- 361
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UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-Morphology| 1993
- 373
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Formation of High Quality SiGe/Si Heterostructures| 1993
- 385
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Liquid Phase Epitaxy of SiGe Structures| 1993
- 397
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Planar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III Ratio| 1993
- 403
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Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers| 1993
- 409
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Deposition and P Doping of Si(1-x)Gex Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System| 1993
- 417
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Misfit Dislocations in Strained Layer Epitaxy| 1993
- 433
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Stress Relaxation Mechanisms by Dislocations in the System Ge on Si| 1993
- 445
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Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems| 1993
- 451
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Relaxation Phenomena in Strained Si1-xGex Layers on Planar and Differently Patterned Si Substrates| 1993
- 457
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Equilibrium Configuration of Misfit Dislocations in Graded Buffers| 1993
- 463
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Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon| 1993
- 469
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Investigations of 2D Hole Gas in Strained Ge-Ge1-xSix Superlattices| 1993
- 475
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Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures| 1993
- 481
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Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)| 1993
- 489
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Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures| 1993
- 495
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Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments| 1993
- 511
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Application of Electron Microscopy to Semiconductor Materials Research| 1993
- 523
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X-Ray Analysis of Strained Layer Configurations| 1993
- 535
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In Situ X-Ray Investigation of Relaxation Processes in Si1-xGex Layers on Silicon Substrate| 1993
- 541
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Determination of Superlattice Structural Parameters in Mismatched Epitaxial Structures| 1993
- 547
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Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction| 1993
- 553
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New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures| 1993
- 559
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Detection of Threading Dislocations by EBIC in a SiGe Epilayer with Graded Buffer| 1993
- 565
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HREM and DLTS of Σ37(610) and Σ29(520 )[001] Tilt Grain Boundaries in Ge Bicrystals| 1993
- 571
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TEM In Situ Investigations of Interfacial Processes in the Pd/a-GeSi System| 1993
- 577
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Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si1-xGex-Heterostructures| 1993
- 583
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Raman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs Superlattices| 1993
- 589
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Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si| 1993
- 595
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Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes| 1993
- 601
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Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements| 1993
- 609
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Investigation of Recombination Properties of Ti Double Donor in Si| 1993
- 615
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Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems| 1993
- 619
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The Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations| 1993