Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates (Englisch)
Nationallizenz
- Neue Suche nach: Fraga, Mariana A.
- Neue Suche nach: Contin, Andre
- Neue Suche nach: Savonov, Graziela S.
- Neue Suche nach: Barbosa, Divani C.
- Neue Suche nach: Pessoa, Rodrigo S.
- Neue Suche nach: Trava Airoldi, Vladimir J.
In:
Materials Science Forum
;
924
;
927-930
;
2018
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates
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Beteiligte:
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Erschienen in:Materials Science Forum ; 924 ; 927-930
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:05.06.2018
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 924
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- -3
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Preface| 2018
- 5
-
SEMI Standards for SiC Wafers| 2018
- 11
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Optimization of 150 mm 4H SiC Substrate Crystal Quality| 2018
- 15
-
Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method| 2018
- 19
-
Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals| 2018
- 23
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Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process| 2018
- 27
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The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal| 2018
- 31
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Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique| 2018
- 35
-
Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si| 2018
- 39
-
Dislocation Behavior in Bulk Crystals Grown by TSSG Method| 2018
- 43
-
Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC| 2018
- 47
-
Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal| 2018
- 51
-
Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent| 2018
- 55
-
Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC| 2018
- 60
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Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method| 2018
- 67
-
Status and Trends in Epitaxy and Defects| 2018
- 72
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99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD| 2018
- 76
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Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor| 2018
- 80
-
Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor| 2018
- 84
-
Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer| 2018
- 88
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High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool| 2018
- 92
-
Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor| 2018
- 96
-
Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor| 2018
- 100
-
Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition| 2018
- 104
-
Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor| 2018
- 108
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Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool| 2018
- 112
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Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC| 2018
- 116
-
CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode| 2018
- 120
-
Hot Filament CVD Growth of 4H-SiC Epitaxial Layers| 2018
- 124
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Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films| 2018
- 128
-
Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed| 2018
- 137
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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices| 2018
- 143
-
Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations| 2018
- 147
-
Defects and Polytype Instabilities| 2018
- 151
-
Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation| 2018
- 155
-
Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers| 2018
- 160
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Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal| 2018
- 164
-
Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices| 2018
- 168
-
Origin Analysis and Elimination of Obtuse Triangular Defects in 4° Off 4H-SiC Epitaxy| 2018
- 172
-
In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers| 2018
- 176
-
Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography| 2018
- 180
-
X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method| 2018
- 184
-
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices| 2018
- 188
-
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC| 2018
- 192
-
Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide| 2018
- 196
-
Optical Stressing of 4H-SiC Material and Devices| 2018
- 200
-
Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС| 2018
- 204
-
Various Single Photon Sources Observed in SiC Pin Diodes| 2018
- 208
-
Dislocation Analysis of p Type and Insulating HPHT Diamond Seed Crystals| 2018
- 212
-
Influence of Dislocations to the Diamond SBD Reverse Characteristics| 2018
- 217
-
Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures| 2018
- 221
-
Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC| 2018
- 225
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Deep Level Defects in 4H-SiC Epitaxial Layers| 2018
- 229
-
Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC| 2018
- 233
-
Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC| 2018
- 239
-
High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC| 2018
- 245
-
Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules| 2018
- 249
-
Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient| 2018
- 253
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The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC| 2018
- 257
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Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures| 2018
- 261
-
Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers| 2018
- 265
-
Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption| 2018
- 269
-
Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC| 2018
- 273
-
Characterization of Inhomogeneity in Thermal Oxide SiO2 Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy| 2018
- 277
-
Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs| 2018
- 281
-
Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs| 2018
- 285
-
Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs| 2018
- 289
-
Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO2/4H-SiC Interfaces| 2018
- 293
-
Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals| 2018
- 297
-
Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon| 2018
- 302
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Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes| 2018
- 306
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Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates| 2018
- 310
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THz Emission from SiC Natural Superlattice Diodes Induced by Strong Electrical Field| 2018
- 314
-
Infrared Reflectance Study of the Graphene/Semi-Insulating 6H-SiC(0001) Heterostructure| 2018
- 318
-
Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers| 2018
- 322
-
Chemical Trend in Band Structure of 3d-Transition-Metal-Doped AlN Films| 2018
- 333
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About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C| 2018
- 339
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Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology| 2018
- 345
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Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness| 2018
- 349
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Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process| 2018
- 353
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Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS| 2018
- 357
-
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET| 2018
- 361
-
Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design| 2018
- 365
-
Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET| 2018
- 369
-
4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching| 2018
- 373
-
Surface Erosion of Ion-Implanted 4H-SiC during Annealing with Carbon Cap| 2018
- 377
-
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC| 2018
- 381
-
Pt:Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-Type 4H-SiC| 2018
- 385
-
Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10- 4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC| 2018
- 389
-
Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing| 2018
- 393
-
Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC| 2018
- 397
-
Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer| 2018
- 401
-
Extremely Thermal Stable Ni/W/TaSi2/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC| 2018
- 405
-
Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC| 2018
- 409
-
Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face| 2018
- 413
-
Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures| 2018
- 419
-
Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs| 2018
- 423
-
4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts| 2018
- 428
-
Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes| 2018
- 432
-
Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation| 2018
- 436
-
Local Lifetime Control in 4H-SiC by Proton Irradiation| 2018
- 440
-
Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment| 2018
- 444
-
Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs| 2018
- 449
-
Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light| 2018
- 453
-
Oxygen Pressure Controlled Oxidation for Gate Insulator Process of SiC MOSFETs| 2018
- 457
-
Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability| 2018
- 461
-
Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition| 2018
- 465
-
Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors| 2018
- 469
-
The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping| 2018
- 473
-
Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors| 2018
- 477
-
Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium| 2018
- 482
-
Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric| 2018
- 486
-
Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors| 2018
- 490
-
Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3| 2018
- 494
-
High-Mobility SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate Stack| 2018
- 498
-
Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO2| 2018
- 502
-
Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs| 2018
- 506
-
MOCVD Compatible Atomic Layer Deposition Process of Al2O3 on SiC and Graphene/SiC Heterostructures| 2018
- 513
-
Incoming and Inline Defectivity Control Solutions for Silicon Carbide Manufacturing| 2018
- 518
-
Regional Manufacturing Cost Structures and Supply Chain Considerations for SiC Power Electronics in Medium Voltage Motor Drives| 2018
- 523
-
PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices| 2018
- 527
-
Automated Mapping of Micropipes in SiC Wafers Using Polarized-Light Microscope| 2018
- 531
-
Crystal Defect Analysis of Latent Scratch Induced during CMP Process on 4H-SiC Wafer Using Electron Microscopy| 2018
- 535
-
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate| 2018
- 539
-
Surface Engineering of SiC through Nanogrinding and CMP| 2018
- 543
-
Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy| 2018
- 547
-
TLS-Dicing for SiC - Latest Assessment Results| 2018
- 559
-
Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout| 2018
- 563
-
Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance| 2018
- 568
-
Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes| 2018
- 573
-
Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al+ and B+| 2018
- 577
-
Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode| 2018
- 581
-
H3TRB Test on 650 V SiC JBS Diodes| 2018
- 585
-
4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness| 2018
- 589
-
Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers| 2018
- 593
-
Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes| 2018
- 597
-
Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications| 2018
- 601
-
Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current| 2018
- 605
-
Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes| 2018
- 609
-
SiC MPS Devices: One Step Closer to the Ideal Diode| 2018
- 613
-
Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current| 2018
- 617
-
Breakdown Field Model for 3C-SiC Power Device Simulations| 2018
- 621
-
Analysis of Forward Surge Performance of SiC Schottky Diodes| 2018
- 625
-
A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure| 2018
- 629
-
Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain| 2018
- 633
-
Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes| 2018
- 637
-
Impact of Cell Layout and Device Structure on On-Voltage Reduction of 6.5-kV n-Channel SiC IGBTs| 2018
- 641
-
High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide| 2018
- 645
-
Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region| 2018
- 649
-
A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime| 2018
- 653
-
Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques| 2018
- 657
-
On the Optimum Determination and Use of SiC VJFET Threshold Voltage| 2018
- 663
-
Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs| 2018
- 667
-
Hole Trapping in the NBTI Characteristic of SiC MOSFETs| 2018
- 671
-
Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning| 2018
- 676
-
Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults| 2018
- 680
-
Vertical Tri-Gate Power MOSFETs in 4H-SiC| 2018
- 684
-
1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results| 2018
- 689
-
TCAD Modeling of a 1200 V SiC MOSFET| 2018
- 693
-
Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs| 2018
- 697
-
Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry| 2018
- 703
-
4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2| 2018
- 707
-
4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology| 2018
- 711
-
Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V| 2018
- 715
-
Short-Circuit Robustness of SiC Trench MOSFETs| 2018
- 719
-
Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures| 2018
- 723
-
Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs| 2018
- 727
-
Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET| 2018
- 731
-
3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab| 2018
- 735
-
Effect of Negative Gate Bias on Single Pulse Avalanche Ruggedness of 1.2 kV Silicon Carbide MOSFETs| 2018
- 739
-
Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET| 2018
- 743
-
Influences of Bias Interruption and Reapplication on High-Temperature Threshold-Voltage Shifts of SiC DMOSFETs| 2018
- 748
-
Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets| 2018
- 752
-
Comparison of Single- and Double-Trench UMOSFETs in 4H-SiC| 2018
- 756
-
Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs| 2018
- 761
-
Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MOSFET with Bottom Oxide Protection Layer| 2018
- 765
-
Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss| 2018
- 770
-
Development of a High-Performance 3,300V Silicon Carbide MOSFET| 2018
- 774
-
Comparison of 3C-SiC and 4H-SiC Power MOSFETs| 2018
- 778
-
Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET| 2018
- 782
-
Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs| 2018
- 786
-
Continuous Compact Model of a SiC VDMOSFET Based on Surface Potential Theory| 2018
- 793
-
Recent Developments Accelerating SiC Adoption| 2018
- 799
-
Power Electronic Devices and Systems Based on Bulk GaN Substrates| 2018
- 805
-
Reliability Challenges for SiC Power Devices in Systems and the Impact on Reliability Testing| 2018
- 811
-
SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures| 2018
- 818
-
An Experimental Demonstration of Short Circuit Protection of SiC Devices| 2018
- 822
-
650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules| 2018
- 827
-
Characterization and Modeling of a SiC MOSFET’s Turn-Off Overvoltage| 2018
- 832
-
1MHz Switching Operation of 1200V Full SiC Power Module| 2018
- 836
-
An Auxiliary Power Supply for Gate Drive of Medium Voltage SiC Devices in High Voltage Applications| 2018
- 841
-
30 kV Pulse Diode Stack Based on 4H-SiC| 2018
- 845
-
30-kW All-SiC Inverter with 3D-Printed Air-Cooled Heatsinks for Plug-In and Full Electric Vehicle Applications| 2018
- 849
-
Extremely Compact Half-Bridge SiC Power Modules Built into EV In-Wheel Motor| 2018
- 854
-
First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application| 2018
- 858
-
Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power| 2018
- 862
-
SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack| 2018
- 866
-
The Development of High Thermal Conductivity SiC Power Modules through the Implementation of Advanced Cooling Techniques Coupled with High Heat Transfer Materials| 2018
- 871
-
Short-Circuit Capability of SiC Cascode| 2018
- 875
-
Benefits of High Voltage SiC Applications in Medium Voltage Power Distribution Grids| 2018
- 879
-
Design of SiC-Based DC-DC Converters for Future Offshore Wind Power Applications| 2018
- 883
-
Module and System Considerations to Maximize Performance Advantages of SiC Power Devices| 2018
- 887
-
Performance and Reliability Requirements for the Application of SiC Power MOSFET in Electrified Vehicle Drive Systems| 2018
- 895
-
Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC| 2018
- 901
-
Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs| 2018
- 905
-
Processing of Cavities in SiC Material for Quantum Technologies| 2018
- 909
-
Graphene/SiC Functionalization for Blood Type Sensing Applications| 2018
- 913
-
3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)| 2018
- 919
-
Lateral GaN MISFETs Fabricated in Mg Ion Implanted Layer| 2018
- 923
-
High Quality AlN Single Crystal Substrates for AlGaN-Based Devices| 2018
- 927
-
Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates| 2018
- 931
-
Electrical Properties of Schottky-Diodes Based on B Doped Diamond| 2018
- 935
-
Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current| 2018
- 939
-
Analysis of ZrxSiyOz as High-k Dielectric for 4H-SiC MOSFETs| 2018
- 943
-
Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications| 2018
- 949
-
Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits| 2018
- 953
-
Design and Simulation of Bipolar 4H-SiC Memory Architecture for High Temperature Applications| 2018
- 958
-
Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology| 2018
- 962
-
Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors| 2018
- 967
-
High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes| 2018
- 971
-
Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics| 2018
- 975
-
Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration| 2018
- 980
-
An Improved I-V Model of GaN HEMT for High Temperature Applications| 2018
- 984
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Electrical Characterization of the Operational Amplifier Consisting of 4H-SiC MOSFETs after Gamma Irradiation| 2018
- 988
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Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation| 2018
- 993
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High Current Silicon Carbide Diodes as Dose Detectors for Hard X-Rays| 2018