Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion) (Englisch)
Nationallizenz
- Neue Suche nach: Wada, Takao
- Neue Suche nach: Fujimoto, Hiroshi
- Neue Suche nach: Masuda, Haruho
In:
Materials Science Forum
;
196-201
;
1625-1630
;
1995
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)
-
Beteiligte:
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Erschienen in:Materials Science Forum ; 196-201 ; 1625-1630
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Verlag:
- Neue Suche nach: Trans Tech Publications
-
Erscheinungsort:Stafa-Zurich, Switzerland
-
Erscheinungsdatum:21.11.1995
-
Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 196-201
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Unified Theory of Defects in Insulators| 1995
- 9
-
Optical and Magnetic Resonance Studies of Defects in GaN| 1995
- 17
-
The Effective Mass Donor in Galliumnitride| 1995
- 23
-
Free Electrons and Resonant Donor State in Gallium Nitride| 1995
- 25
-
Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures| 1995
- 31
-
Carrier Localization in Gallium Nitride| 1995
- 37
-
Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films| 1995
- 43
-
Luminescence of Doped and Undoped Bulk Crystals of GaN| 1995
- 49
-
Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy| 1995
- 55
-
Charactrization of Residual Transition Metal Ions in GaN and AIN| 1995
- 61
-
Sn Mössbauer Study of Ion Implanted GaN| 1995
- 67
-
Ni Complexes in Diamond| 1995
- 73
-
Nickel and Nitrogen(?) Related Defects in High Pressure Synthetic Diamond| 1995
- 79
-
Ni Related Centers in Synthetic Diamond| 1995
- 85
-
Defect Control and Defect Engineering in Ion-Implanted Diamond| 1995
- 91
-
Ga Bound Excitons in 6H-SiC| 1995
- 97
-
Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO2 Films| 1995
- 103
-
Theory of Interstitial Oxygen in Silicon and Germanium| 1995
- 109
-
Impurity Behavior during Si Single Crystal Growth from the Melt| 1995
- 115
-
Lattice Sites of Li in Si and Ge| 1995
- 121
-
Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and Ge| 1995
- 127
-
Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As| 1995
- 133
-
Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in Silicon| 1995
- 139
-
Isoelectronic Bound-Multiexciton Systems in Thermally-Treated Czochralski Silicon| 1995
- 145
-
Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon| 1995
- 151
-
Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures| 1995
- 157
-
Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C| 1995
- 163
-
Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions| 1995
- 167
-
EPR and IR Absorption of Defects in Isotopically Enriched Germanium| 1995
- 173
-
NMR Study of Impurity Electronic Structure and Dynamics| 1995
- 179
-
Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide| 1995
- 189
-
The Role of Point Defects in Non-Stoichiometric III-V Compounds| 1995
- 195
-
Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR| 1995
- 201
-
Bound Exciton Spectra in Semi-Insulating GaAs| 1995
- 207
-
Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors| 1995
- 213
-
Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide| 1995
- 219
-
Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide| 1995
- 225
-
Photoluminescence of Germanium Doped Gallium Arsenide| 1995
- 231
-
Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure| 1995
- 237
-
Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs| 1995
- 243
-
Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates| 1995
- 249
-
Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States| 1995
- 255
-
Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE| 1995
- 261
-
Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs| 1995
- 267
-
Studies of Deep Levels in n-GaAs by SADLTS| 1995
- 273
-
Trends in the Metastability of DX-Centers| 1995
- 279
-
Carrier Concentrations Saturation in n Type AlxGa1-xAs| 1995
- 285
-
Doping Puzzles in II-VI and III-V Semiconductors| 1995
- 293
-
Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZNSE -| 1995
- 297
-
Acceptor Compensation in Nitrogen Doped Zinc Selenide| 1995
- 303
-
Nitrogen-Doping Efficiency in ZnSe and ZnTe| 1995
- 309
-
Doping of ZnSe, ZnTe, and CdTe with Group V Elements| 1995
- 315
-
Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe| 1995
- 321
-
Intrinsic Defects in ZnSe, ZnTe, and CdS Doped with Li| 1995
- 327
-
The Electronic Structure of Deep Donors and the Nature of the Anion Vacancy in II-VI Compound Semiconductors| 1995
- 333
-
Studies of Defects in Electron and Proton Irradiated ZnO by Positron Annihilation| 1995
- 339
-
Photoluminescence of Bulk Si-Ge Single Crystals| 1995
- 345
-
Dopant Diffusion in Strained and Relaxed Si1-xGex| 1995
- 349
-
In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD| 1995
- 353
-
Electrical Transport in SixGe1-x Bulk Alloys| 1995
- 359
-
Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si1-x Gex Crystals| 1995
- 365
-
Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films| 1995
- 371
-
Irradiation Induced Lattice Defects in Si1-xGex Epitaxial Devices| 1995
- 377
-
Photoluminescence of Deformed Si-Ge Alloy| 1995
- 383
-
Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers| 1995
- 389
-
An Electron Paramagnetic Resonance Study of Defects in Semiconducting Iron Disilicide| 1995
- 395
-
DX Centres Versus Shallow D-Centres in AIGaAs Based Quantum Wells| 1995
- 403
-
Extrinsic Self-Trapping of an Electron in Quantum-Well Structures| 1995
- 409
-
Carbon Delta-Doping In GaAs and AlAs| 1995
- 415
-
Theory of Si δ-Doped GaAs| 1995
- 421
-
Metastability and Electronic Structure of Periodically n-Type and p-Type δ-Doped Layer in GaAs| 1995
- 425
-
Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces| 1995
- 431
-
Saturation of Luminescence Quenching Due to Nonradiative Centers in a GaAs/AlGaAs Quantum Well| 1995
- 437
-
Defect Induced Electron Transport Trough Semiconductor Barriers| 1995
- 443
-
Correlated Charged Donors in GaAs/AlGaAs Quantum Well. Quantum- and Mobility-Scattering Times| 1995
- 449
-
Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells| 1995
- 455
-
Defect Related Recombination Processes in II-VI Quantum Wells| 1995
- 461
-
Magnetoelectronic States in Semiconductor / Antiferromagnet Superlattices| 1995
- 467
-
Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells| 1995
- 473
-
Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures| 1995
- 479
-
Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers| 1995
- 485
-
Profiling the Deep Levels inSiGe/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy| 1995
- 491
-
Multiphonon Carrier Emission and Capture by Defects in Nanostructures| 1995
- 497
-
Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM Investigations| 1995
- 503
-
Enhanced Impurity Solubility and Diffusion Near Surfaces| 1995
- 505
-
A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy| 1995
- 511
-
Si/Ge Ordered Interface: Structure and Formation Mechanism| 1995
- 517
-
Spin Dependent Recombination and EPR of Surface Paramagnetic Centers in Crystalline and Porous Silicon| 1995
- 523
-
Variation of 2DEG-Properties on Hetrointerface Caused by the Surface Defects Recharging| 1995
- 529
-
Stucture of the Pb Center: Endor Investigation| 1995
- 535
-
High Quality GaAs on Si Grown by CBE| 1995
- 539
-
Control of Defects in GaAs/GaInP Interface Grown by MOVPE| 1995
- 543
-
Ab Initio Study of Cl Impurity at GaAs Surfaces| 1995
- 549
-
Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim| 1995
- 555
-
High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface| 1995
- 561
-
Strain Characterization of Hg1-xFexSe-Layers by Electron Spin Resonance| 1995
- 567
-
Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices| 1995
- 573
-
Photoinduced Defects in CdS-Doped Glasses| 1995
- 579
-
Electronic Structure of Erbium Centers in Silicon| 1995
- 585
-
Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits| 1995
- 591
-
Excitation of Rare Earths in Semiconductors by the Excitonic Auger Recombination| 1995
- 597
-
Optical and Electrical Properties of Si:Er Light-Emitting Structures| 1995
- 603
-
Light Emission from Er-Implanted Silicon Using Anodization| 1995
- 609
-
Erbium Related Centers in CZ-Silicon| 1995
- 615
-
Electrically Active Centers in Silicon Doped with Erbium| 1995
- 621
-
Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source| 1995
- 627
-
Total Energy Calculation for Er Impurity in GaAs| 1995
- 633
-
Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors| 1995
- 639
-
Characteristics of Er-Oxygen Complex Centers in GaAs| 1995
- 645
-
Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room Temperature| 1995
- 651
-
Relaxation of Yb 4f-Shell in In(P,As) Alloys| 1995
- 657
-
The Importance of Auger Effect on the Efficiency of Er-Related Luminescence in InP:Er| 1995
- 663
-
Investigation of Er-Related Centers in Doped GaP| 1995
- 669
-
High Resolution DLTS Studies of Transition-Metal-Related Defects in Silicon| 1995
- 677
-
Ab-Initio Total Energy Calculations and the Hyperfine Interaction of Interstitial Iron in Silicon| 1995
- 683
-
Substitutional Transition Metal Defects in Silicon Grown-In by the Float Zone Technique| 1995
- 689
-
Interaction of Iron Donor with Transition-Metal Impurities in Silicon| 1995
- 695
-
Lithium-Gold-Related Photoluminescence in n-Type Silicon| 1995
- 701
-
Copper Species in Ultra-Pure Germanium Crystals| 1995
- 707
-
Zeeman Spectroscopy and Crystal-Field Model of Neutral Vandium in 6H-Silicon Carbide| 1995
- 713
-
Electronic Properties of GaAs Doped with Copper| 1995
- 719
-
Zeeman Spectroscopy of Transition Metals in Hexagonal GaN| 1995
- 725
-
Paramagnetic Resonance of the Neutral Maganese Acceptor in GaP| 1995
- 731
-
Piezo-Spectroscopic Study of the V3+ Photoluminescence in GaP:V:S| 1995
- 737
-
Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals| 1995
- 743
-
Zeeman Splitting and Isotope Shift of Optical Transitions at Ni2+ Centers in Cubic ZnS| 1995
- 749
-
Energy States of Ni and Band Offsets in Zn1-xCdxSe(Ni) and ZnSxSe1-x(Ni) Alloys| 1995
- 755
-
Intermdiately Bound Excitons in Wurtzit Type Semiconducturs Doped with Transition Metal Impurities| 1995
- 761
-
Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSe| 1995
- 767
-
Nonlinear Zeeman Behaviour of Copper Centers in ZnS and CdS| 1995
- 773
-
Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe| 1995
- 779
-
The Titanium and Vanadium Donor in CdTe| 1995
- 785
-
Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si| 1995
- 791
-
The NNO Defect in Silicon| 1995
- 797
-
Generation of Deep Level by Nitrogen Diffusion in Si| 1995
- 803
-
A First-Priciples Study of Carbon Impurities in GaAs and InAs| 1995
- 809
-
Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations| 1995
- 817
-
Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence Spectroscopy| 1995
- 825
-
A Hydrogen-Related Defect in Polycrystalline CVD Diamond| 1995
- 831
-
Dynamics of Hydrogen in Si and GaAs: Results from Muonium Experiments| 1995
- 837
-
Acceptor and Donor Neutralization by Hydrogen in Bulk 6H-SiC| 1995
- 843
-
Hydrogen States and Passivation in Silicon| 1995
- 849
-
Endor Identification of a Hydrogen-Passivated Thermal Donor| 1995
- 855
-
Hydrogen Passivation of the Sulfur Double Donor in Silicon Investigated by EPR and ENDOR| 1995
- 861
-
Hydrogen Passivation of Iron-Related Hole Traps in Silicon| 1995
- 867
-
Boron Neutralization in Epitaxial Si Films Grown by Photo-CVD at Very Low Temperature (≦ 200°C)| 1995
- 873
-
Screening Effect of Binding of P-Si-H Complex in Silicon| 1995
- 879
-
The H2* Defect in Crystalline Germanium| 1995
- 885
-
A Theoretical Study of the B-H and Al-H Complexes in Si| 1995
- 891
-
Calculations of the Neutral and Charged States of the {H,C} Pair in Silicon| 1995
- 897
-
Structural and Electronic Properties of Carbon-Hydrogen Complex in Silicon| 1995
- 903
-
Stability and Defect Reaction of Two Hydrogen-Carbon Complexes in Silicon| 1995
- 909
-
Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-Line| 1995
- 915
-
Optical Absorption due to Vibration of Hydrogen-Oxygen Pairs in Silicon| 1995
- 921
-
Theory of the NiH2 Complex in Si and the CuH2 Complex in GaAs| 1995
- 927
-
Hydrogen Induced Defects in Cobalt Doped Silicon| 1995
- 933
-
H Interacting with Intrinsic Defects in Si| 1995
- 939
-
Formation of Hydrogen-Oxygen-Vacancy Complexes in Silicon| 1995
- 945
-
Metastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon| 1995
- 951
-
Interstitial Hydrogen and the Dissociation of C-H Defects in GaAs| 1995
- 957
-
Hydrogen Induced Degradation in Heavily Carbon-Doped GaAs Diodes| 1995
- 963
-
Acceptor-Hydrogen Complexes in InAs| 1995
- 969
-
Vacancy- and Acceptor- H Complxes in Inp| 1995
- 975
-
Investigation of the Manganese-Hydrogen Complex in Inp| 1995
- 981
-
First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaN| 1995
- 987
-
Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors| 1995
- 993
-
Upconversion Induced by Deep Defects in GaAs| 1995
- 1001
-
Negative Effective-U and positive Effective-U Nature of the Bistable Dangling-Bonds in a-Si, a-Si:H and c-Si Studied by ab Initio Molecular-Dynamics Simulation| 1995
- 1007
-
New Bistable Oxygen-Related Complex in Silicon| 1995
- 1013
-
Theoretical Modelling of Donor Metastable States in n-Type Gallium Arsenide| 1995
- 1019
-
Donor Metastable States and the Polaron Effect in n-Type Gallium Arsenide| 1995
- 1025
-
A New Type of Metastability due to Donors in GaAs| 1995
- 1031
-
Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs| 1995
- 1037
-
The Role of a 70-80 me V Acceptor in the Photoquenching of EL'| 1995
- 1043
-
Holes Induced by Strong Near Band Gap Light in GaAs:O. EL2 Related?| 1995
- 1049
-
Metastable Photogenerated Effects in Low Resistivity GaAs| 1995
- 1055
-
Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAs| 1995
- 1061
-
Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?| 1995
- 1067
-
Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs| 1995
- 1073
-
Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy| 1995
- 1079
-
Direct Experimental Evidence of Autolocalization Nature of DX-Centers| 1995
- 1085
-
Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs| 1995
- 1091
-
Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs| 1995
- 1097
-
A Bistable Defect in Si-Doped Al0.3Ga0.7As| 1995
- 1103
-
Use of Bistable Centers in CdF2 in Holographic Recording| 1995
- 1109
-
Structural Study of Degraded II-VI Blue-Light Emitters| 1995
- 1117
-
Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments| 1995
- 1123
-
Analysis of the Recombination-Active Region Around Extended Defects in Silicon| 1995
- 1129
-
Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon| 1995
- 1135
-
Positron Lifetime in Si Multivacancies| 1995
- 1141
-
Frenkel Defects in Low Temperature e-- Irradiated Ge and Si Investigated by X-Ray Diffraction| 1995
- 1147
-
On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.| 1995
- 1153
-
Defects in NTD MCZ Si Doped with Magnesium| 1995
- 1159
-
Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon| 1995
- 1165
-
Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy| 1995
- 1171
-
Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy| 1995
- 1177
-
A Positron Lifetime Study of Defects in Plastically Deformed Silicon| 1995
- 1183
-
Increase of Electrical Activity of Dislocations in Si during Plastic Deformation| 1995
- 1189
-
Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance| 1995
- 1195
-
Energy States of Deformation-Induced Dislocations in Silicon Crystals| 1995
- 1201
-
Cathodoluminescence Study on Dislocation-Related Luminescence in Silicon| 1995
- 1207
-
Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon| 1995
- 1213
-
Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si Crystal| 1995
- 1219
-
New Effect of Interaction between Moving Dislocation and Point Defects in Silicon| 1995
- 1225
-
Computer Simulation Study on Dislocation Motion in Semiconductors| 1995
- 1231
-
Scratch-Related Effects on Silicon Surface| 1995
- 1237
-
Study of Electron Irradiation-Induced Defects of 3c-SiC and Diamond by Ultra-High Voltage Electron Microscopy| 1995
- 1243
-
Study on the Irradiation Induced Defects in 6H-SiC| 1995
- 1249
-
Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy| 1995
- 1255
-
Ga-Vacancies and AsGa-Antisites in Electron Irradiated GaAs| 1995
- 1261
-
Frenkel Pairs and PIn Antisites in Low Temperature Electron Irradiated InP| 1995
- 1267
-
Generation of Point Defects during Plastic Deformation of InP| 1995
- 1273
-
Category II and Category III Defects in 200 KEV Fe Implanted InP| 1995
- 1279
-
Clustering Process of Point Defects in GaP Studied by Transmission Electron Microscopy| 1995
- 1285
-
Hg Vacancies in Hg1-xCdxTe Studied by Positron Annihilation| 1995
- 1291
-
ESR Study of a-Ge1-xNx Prepared by Magnetron Sputtering| 1995
- 1297
-
First Principles Investigation of Vacancy Oxygen Defects in Si| 1995
- 1303
-
Oxygen Complexing with Group II Impurities in Silicon| 1995
- 1309
-
Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers| 1995
- 1315
-
Effect of Carbon on Thermal Double Donor Formation in Silicon| 1995
- 1321
-
Anomalous Fast Annihilation of Thermal Donors in Carbon-Rich Silicon| 1995
- 1327
-
Ab-Initio Total Energy Calculation and the Hyperfine Interactions of Iron-Acceptor Pairs in Silicon| 1995
- 1333
-
The Structure and Bonding of Iron-Acceptor Pairs in Silicon| 1995
- 1339
-
Ab Initio Study on Fe-Acceptor Pairing in Silicon| 1995
- 1345
-
Photo-Induced Iron Atom Motion of Iron-Acceptor Pairs in Silicon| 1995
- 1351
-
Recombination-Enhanced Migration of Interstitial Iron in Silicon| 1995
- 1357
-
The Origin of the Low-Spin Ground State for Trigonal Fei-AuSi and Fei-AgSi Pairs in Silicon| 1995
- 1363
-
The Atomic Stucture of Mn4 Clusters in Silicon| 1995
- 1369
-
Perturbed Angular Correlation Study of Impurities Interaction in Si| 1995
- 1375
-
TDS and RB Studies of Ar Implanted to Si| 1995
- 1381
-
Reactions between Point Defects in Silicon Doped with Germanium| 1995
- 1385
-
Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si| 1995
- 1389
-
Surface Recombination in Semiconductors| 1995
- 1395
-
Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs| 1995
- 1401
-
Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing| 1995
- 1407
-
Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect| 1995
- 1413
-
Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals| 1995
- 1419
-
PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe 77Br(77Se)| 1995
- 1425
-
Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si| 1995
- 1431
-
Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal| 1995
- 1437
-
Optically Induced Anneal of GaAs and AlGaAs Layers| 1995
- 1443
-
Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP| 1995
- 1449
-
Deformation-Induced Defects in GaSb| 1995
- 1455
-
Damages in AlGaAs/GaAs Heterostructures Induced by KeV-Electron-Beam Irradiation| 1995
- 1461
-
TEM Investigation of Point Defect Interactions in II-VI Compounds| 1995
- 1467
-
Athermal Motion of Donors under Ultrasound in CdS Crystals| 1995
- 1471
-
Chemical Identification on the Atomic Scale in MBE-Grown III-V Alloy Semiconductors| 1995
- 1481
-
Positron-Annihilation 2D-Acar Study of Divacancy and Vacancy-Oxygen Pairs in Si| 1995
- 1491
-
Defect Studies with Isotopically Designed Semiconductors| 1995
- 1497
-
The Chemical Identification of Defect Impurities Using Radioactive Isotopes| 1995
- 1503
-
Radioactive Isotopes in Photoluminescence Experiemts: Identification of Defects Levels| 1995
- 1509
-
Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process| 1995
- 1515
-
The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si| 1995
- 1521
-
Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors| 1995
- 1527
-
Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy| 1995
- 1531
-
High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay| 1995
- 1537
-
New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes| 1995
- 1543
-
Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields| 1995
- 1547
-
Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon| 1995
- 1553
-
Determination of High Relative Deep Level Concentrations in DLTS| 1995
- 1559
-
Generation of Ultra-High Acceleration Field for New Extreme Condition Science| 1995
- 1563
-
Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors| 1995
- 1571
-
Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals| 1995
- 1577
-
Anharmonicity of The CAsLocal Oscillator in Gallium Arsenide| 1995
- 1583
-
Calculation of Local Vibrational Modes at Point Defects in Semiconductors| 1995
- 1589
-
The Migration of Carbon and Self Interstitials in Silicon| 1995
- 1595
-
Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation Energy| 1995
- 1601
-
Electric-Dipole Spin Resonance of Defects Correlated with the Diffusion of ZN Into SI| 1995
- 1607
-
Enhanced Diffusion of Impurities into Solids by Electron Beam Doping| 1995
- 1613
-
Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)| 1995
- 1619
-
Electron Energy Dependennce of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion)| 1995
- 1625
-
Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)| 1995
- 1631
-
Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation| 1995
- 1637
-
Influence of Simultaneously Implanted As+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon| 1995
- 1643
-
Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures| 1995
- 1649
-
Study of The Compensating Centres in GaAs:Te by Positron Annihilation| 1995
- 1655
-
Time-of-Flight in Lithium-Compensated GaAS| 1995
- 1661
-
The Influence of the Zinc Concentration on Defect Characteristics of InP| 1995
- 1667
-
Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS2 Chalcopyrite Semiconductors| 1995
- 1673
-
Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes| 1995
- 1679
-
Oxygen Related Defect Centers: the Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon| 1995
- 1683
-
Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide Integrity| 1995
- 1691
-
Fundamentals of Point Defect Aggregation and Dissolution Phenomena of Crystal Originated Defects in Czochralski Silicon| 1995
- 1697
-
Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.B| 1995
- 1707
-
Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth| 1995
- 1713
-
Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals| 1995
- 1719
-
Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals| 1995
- 1725
-
Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers| 1995
- 1731
-
Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity| 1995
- 1737
-
Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers| 1995
- 1743
-
Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal| 1995
- 1749
-
Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si| 1995
- 1755
-
Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques| 1995
- 1761
-
Microdefects in Nitrogen Doped FZ Silicon Revealed by Li+ Drifting| 1995
- 1767
-
Influence of Al Doping on Deep Levels in MBE GaAs| 1995
- 1773
-
Deep Donor - Acceptor Correlations in Low Temperature GaAs| 1995
- 1779
-
Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell| 1995
- 1785
-
Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs| 1995
- 1791
-
Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements| 1995
- 1797
-
Study of Gallium and Antimony Cluster Formation în GaSb Bulk Crystals Grown from Nonstoichiometric Melts| 1995
- 1801
-
TEM Evaluation of Ordered and Modulated Structures in MBE-Grown InAlAs Crystals on (110)InP| 1995
- 1807
-
SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen| 1995
- 1813
-
Measurements of Polishing-Induced Residual Damages in Silicon Wafers Using Noncontact Photoconductivity Amplitude Technique| 1995
- 1817
-
Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers| 1995
- 1823
-
Transmission Electron Microscopy of LatticeDefects in CZ-Silicon Wafer Formed by Two-Stage Annealing| 1995
- 1829
-
Rhombic Aggregation of Dislocations in CZ-Si Crystal| 1995
- 1835
-
Study of Near-Surface Microdefects in Czochralski-Si Wafers After a CMOS Thermal Process| 1995
- 1841
-
Subsurface Damage in Single Diamond Tool Machined SI Wafers| 1995
- 1847
-
Interface Defects of Bonded Silicon Wafers| 1995
- 1853
-
Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices| 1995
- 1859
-
Oxygen Precipitation in CZ Silicon Crystals Contaminated with Iron| 1995
- 1865
-
Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffration| 1995
- 1871
-
Precipitates in Antimony Implanted Silicon| 1995
- 1875
-
Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation| 1995
- 1881
-
High Energy Si, Zn and Ga Ion Implantation into GaAs on Si| 1995
- 1887
-
Local Structure Analysis around Arsenic Implanted into Silicon by XAFS Technique| 1995
- 1891
-
Effects of Si3N4 Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing| 1995
- 1897
-
Photoluminescence Defect Diagnostics in Poly-Si Thin Films| 1995
- 1903
-
DLTS of Polysilicon Emitter Solar Cells| 1995
- 1909
-
Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film| 1995
- 1915
-
Spin-Dependent Transport in SiC and III-V Semiconductor Devices| 1995
- 1923
-
Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid| 1995
- 1927
-
ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well Structures| 1995
- 1933
-
Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions| 1995
- 1939
-
Thermal and Athermal Migration of Ion-Irradiation Defects in Al0.3Ga0.7As/GaAs Heterostructures| 1995
- 1943
-
Characterization of Mg+F, Mg+Ar Dual Ion Implanted AlxGa1-xAs(0≤x≤0.75) Layers| 1995
- 1949
-
Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy| 1995
- 1955
-
Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs| 1995
- 1961
-
Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs| 1995
- 1967
-
Contamination and Cleaning of GaAs-(100) Surfaces| 1995
- 1973
-
Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma| 1995
- 1979
-
Gettering of Transition Metals in Multicrystalline Silicon| 1995
- 1985
-
Substitutional Gettering of Platinum by Diffusion into Ion-Beam Damaged Silicon| 1995
- 1991
-
Gettering of Iron Using Electrically Inactive Boron Doped Layer| 1995
- 1997
-
Ab Initio Calculation for G-Values of ESR Centers in a-Si:H| 1995