µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon (Englisch)
Nationallizenz
- Neue Suche nach: Düngen, Wolfgang
- Neue Suche nach: Job, Reinhart
- Neue Suche nach: Ma, Yue
- Neue Suche nach: Huang, Yue Long
- Neue Suche nach: Fahrner, Wolfgang R.
- Neue Suche nach: Keller, L.O.
- Neue Suche nach: Horstmann, J.T.
In:
Solid State Phenomena
;
108-109
;
91-96
;
2005
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon
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Beteiligte:
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Erschienen in:Solid State Phenomena ; 108-109 ; 91-96
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:15.12.2005
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 108-109
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion| 2005
- 11
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Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material| 2005
- 17
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Oxygen Precipitation in Nitrogen Doped CZ Silicon| 2005
- 25
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From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures| 2005
- 33
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Passivation of Ge Nanocrystals in SiO2| 2005
- 39
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The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix| 2005
- 45
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Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs| 2005
- 53
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Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films| 2005
- 59
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Stability of Emission Properties of Silicon Nanostructures| 2005
- 65
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Blue Photoluminescence from Quantum Size Silicon Nanopowder| 2005
- 71
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Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO2 Layer Obtained by Low Energy Ion Implantation| 2005
- 77
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Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer| 2005
- 83
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Ge Nanoclusters in GeO2: Synthesis and Optical Properties| 2005
- 91
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µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon| 2005
- 97
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Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon| 2005
- 103
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Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers| 2005
- 109
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Electrical Properties of Clustered and Precipitated Iron in Silicon| 2005
- 115
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Gettering Mechanism of Cu in Silicon Calculated from First Principles| 2005
- 125
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Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations| 2005
- 133
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Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon| 2005
- 139
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The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon| 2005
- 145
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Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon| 2005
- 151
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Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon| 2005
- 157
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FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure| 2005
- 163
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Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time| 2005
- 169
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Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si| 2005
- 175
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Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon| 2005
- 181
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"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress| 2005
- 187
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Formation of the Buried Insulating SixNy Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer| 2005
- 193
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A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity| 2005
- 199
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Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon| 2005
- 205
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The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon| 2005
- 211
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Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing| 2005
- 217
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Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors| 2005
- 223
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Metastable VO2 Complexes in Silicon: Experimental and Theoretical Modeling Studies| 2005
- 229
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Hydrogen-Related Donors in Silicon: Centers with Negative Electronic Correlation Energy| 2005
- 235
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Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon| 2005
- 241
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Study of Au Diffusion in Nitrogen-Doped FZ Si| 2005
- 245
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Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation| 2005
- 253
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Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys| 2005
- 261
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Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies| 2005
- 267
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VOn (n≥3) Defects in Irradiated and Heat-Treated Silicon| 2005
- 273
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Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon| 2005
- 279
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Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon| 2005
- 285
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On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers| 2005
- 291
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Novel Low-K Dielectric Obtained by Xenon Implantation in SiO2| 2005
- 297
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Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth| 2005
- 303
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Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon| 2005
- 309
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Impact of Hydrogen Implantation on Helium Implantation Induced Defects| 2005
- 315
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Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons| 2005
- 321
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Defect Engineering in Ion Beam Synthesis of SiC and SiO2 in Si| 2005
- 327
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Electrical Passivation of Silicon Wafers| 2005
- 333
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Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties| 2005
- 339
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Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects| 2005
- 345
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Phase Transition on Surface of IV Group Semiconductors by Laser Radiation| 2005
- 351
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Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon| 2005
- 357
-
A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon| 2005
- 365
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First Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski Silicon| 2005
- 373
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On the Effect of Lead on Irradiation Induced Defects in Silicon| 2005
- 379
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Formation and Properties of Iron-Phosphorus and Iron-Phosphorus-Hydrogen Complexes in Silicon| 2005
- 385
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Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside| 2005
- 395
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Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si| 2005
- 401
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Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters| 2005
- 407
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Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon| 2005
- 413
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General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals| 2005
- 419
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Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability| 2005
- 425
-
Defect Interaction Mechanisms between Antimony and Indium in Silicon| 2005
- 433
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Formation of Vacancies and Divacancies in Plane-Stressed Silicon| 2005
- 439
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Selective SiGe Etching Formed by Localized Ge Implantation on SOI| 2005
- 445
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Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates| 2005
- 451
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Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method| 2005
- 457
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The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures| 2005
- 463
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Strained Silicon on Ultrathin Silicon-Germanium Virtual Substrates| 2005
- 469
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Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS| 2005
- 477
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Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures| 2005
- 483
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Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication| 2005
- 489
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Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures| 2005
- 497
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The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon| 2005
- 503
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Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties| 2005
- 509
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Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers| 2005
- 515
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Multicrystalline Silicon from Different Types of Bridgman Furnaces: Ingot and Cell Properties| 2005
- 519
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Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers| 2005
- 525
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Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells| 2005
- 531
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Investigation of Defects in the Edge Region of Multicrystalline Solar Silicon Ingots| 2005
- 539
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Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices| 2005
- 547
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DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon| 2005
- 553
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Defect Behaviour in Deuterated and Non-Deuterated n-Type Si| 2005
- 561
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Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo| 2005
- 567
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EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si| 2005
- 571
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Cobalt Contamination in Silicon| 2005
- 577
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Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon| 2005
- 585
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Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon| 2005
- 591
-
Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR| 2005
- 597
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Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization| 2005
- 603
-
Potential and Limitations of Electron Holography in Silicon Research| 2005
- 609
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Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon| 2005
- 615
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Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal| 2005
- 621
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Infrared Absorption Measurement of Carbon Concentration down to 1x1014/cm3 in CZ Silicon| 2005
- 627
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EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon| 2005
- 631
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The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction| 2005
- 637
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In-Line Monitor Introduction to Prevent Metallic Contamination in Wet Bench| 2005
- 643
-
Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods| 2005
- 649
-
The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface| 2005
- 655
-
Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy| 2005
- 663
-
Silicon Carbide: Defects and Devices| 2005
- 671
-
Ab Initio Investigations of Threshold Displacement Energies and Stability of Associated Defects in Cubic Silicon Carbide| 2005
- 677
-
Electrical Characterizations of Hydrogenated 4H-SiC Epitaxial Samples| 2005
- 683
-
Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon| 2005
- 691
-
Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates| 2005
- 697
-
Theoretical Investigations of the Energy Levels of Defects in Germanium| 2005
- 703
-
Some Recent Advances on the n-Type Doping of Diamond| 2005
- 709
-
Helium Implantation Damage in SiC| 2005
- 713
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6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy| 2005
- 717
-
Current Transport by Defects in Pr2O3 High K Films| 2005
- 723
-
Pulsed Laser Deposition of Hafnium Oxide on Silicon| 2005
- 729
-
Modification of Silicon Oxide by High Energy Electron Beam| 2005
- 735
-
Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption| 2005
- 741
-
Structural Characterization of Epitaxial Si / Pr2O3 / Si(111) Heterostructures| 2005
- 749
-
Silicon Based Light Emitters for On-Chip Optical Interconnects| 2005
- 755
-
Rare Earth Ion Implantation for Silicon Based Light Emission| 2005
- 761
-
SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions| 2005
- 767
-
Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon| 2005
- 773
-
Dislocation Related PL of Multi-Step Annealed Cz-Si Samples| 2005
- 779
-
Defect Formation in MBE Er-Doped Si Light-Emitting Structures| 2005
- 787
-
Atomistic Nanodevice Simulation| 2005
- 789
-
Interfacing Biology with Electronic Devices| 2005
- 797
-
Thin SiGe Relaxed Buffer for Strain Adjustment| 2005