LiH under high pressure and high temperature: A first‐principles study (Englisch)
- Neue Suche nach: Wang, Y.
- Neue Suche nach: Ahuja, R.
- Neue Suche nach: Johansson, B.
- Neue Suche nach: Wang, Y.
- Neue Suche nach: Ahuja, R.
- Neue Suche nach: Johansson, B.
In:
physica status solidi (b)
;
235
, 2
;
470-473
;
2003
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:LiH under high pressure and high temperature: A first‐principles study
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Beteiligte:
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Erschienen in:physica status solidi (b) ; 235, 2 ; 470-473
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Verlag:
- Neue Suche nach: WILEY‐VCH Verlag
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Erscheinungsdatum:01.02.2003
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 235, Ausgabe 2
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 203
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Proceedings of the Tenth International Conference on High Pressure Semiconductor Physics (HPSP‐X)Murdin, Ben et al. | 2003
- 209
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Preface: phys. stat. sol. (b) 235/2Murdin, Ben et al. | 2003
- 209
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Preface| 2003
- 210
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Committees| 2003
- 211
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William Paul: a scientist, a teacher, and a friendCardona, Manuel et al. | 2003
- 211
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Tribute to Prof. W. Paul at the Royal Society of London - William Paul: A scientist, a teacher, and a friend (invited)Cardona, Manuel et al. | 2003
- 221
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A personal view of the physics of high pressure studies of solidsCohen, Marvin L. et al. | 2003
- 221
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Tribute to Prof. W. Paul at the Royal Society of London - A personal view of the physics of high pressure studies of solids (invited)Cohen, Marvin L. et al. | 2003
- 225
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Wide gap and wurtzite semiconductors - Light emission versus energy gap in group-III nitrides: Hydrostatic pressure studies (invited)Suski, T. et al. | 2003
- 225
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Light emission versus energy gap in group‐III nitrides: hydrostatic pressure studiesSuski, T. / Teisseyre, H. / Łepkowski, S. P. / Perlin, P. / Mariette, H. / Kitamura, T. / Ishida, Y. / Okumura, H. / Chichibu, S. F. et al. | 2003
- 232
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High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructuresConsejo, Ch. / Konczewicz, L. / Contreras, S. / Jouault, B. / Łepkowsky, S. / Zielinski, M. / Robert, J. L. / Lorenzini, Ph. / Cordier, Y. et al. | 2003
- 232
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Wide gap and wurtzite semiconductors - High pressure study of the electrical transport phenomena in AlGaN-GaN heterostructuresConsejo, Ch et al. | 2003
- 238
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Nonlinear polarization in nitrides revealed with hydrostatic pressureVaschenko, G. / Menoni, C. S. / Patel, D. / Tomé, C. N. / Clausen, B. / Gardner, N. F. / Sun, J. / Götz, W. / Ng, H. M. / Cho, A. Y. et al. | 2003
- 238
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Wide gap and wurtzite semiconductors - Nonlinear polarization in nitrides revealed with hydrostatic pressure (invited)Vaschenko, G. et al. | 2003
- 248
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Wide gap and wurtzite semiconductors - Tight binding modelling of band offsets in GaN and ZnSe based heterostructuresÜnlü, H. et al. | 2003
- 248
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Tight binding modelling of band offsets in GaN and ZnSe based heterostructuresÜnlü, H. et al. | 2003
- 254
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Wide gap and wurtzite semiconductors - Pressure dependent phonon properties of cubic group III-nitridesTalwar, D.N. et al. | 2003
- 254
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Pressure dependent phonon properties of cubic group III‐nitridesTalwar, D. N. et al. | 2003
- 260
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Dependence of phonon widths on pressure and isotopic mass: ZnOSerrano, J. / Widulle, F. / Romero, A.H. / Rubio, A. / Lauck, R. / Cardona, M. et al. | 2003
- 260
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Wide gap and wurtzite semiconductors - Dependence of phonon widths on pressure and isotopic mass: ZnOSerrano, J. et al. | 2003
- 267
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Specific features of the electronic structure of III–VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculationsSegura, A. / Manjón, F. J. / Errandonea, D. / Pellicer‐Porres, J. / Muñoz, V. / Tobias, G. / Ordejón, P. / Canadell, E. / San Miguel, A. / Sánchez‐Portal, D. et al. | 2003
- 267
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Layered semiconductors - Specific features of the electronic structure of III-VI layered semiconductors: Recent results on structural and optical measurements under pressure and electronic structure calculations (invited)Segura, A. et al. | 2003
- 277
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Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxyKobayashi, T. / Tomoda, H. / Prins, A. D. / Homma, Y. / Uchida, K. / Nakahara, J. et al. | 2003
- 277
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Layered semiconductors - Photoluminescence studies of GaAs-partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxyKobayashi, T. et al. | 2003
- 282
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Calculated high pressure crystal structure transformations for phosphorusAhuja, Rajeev et al. | 2003
- 282
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Layered semiconductors - Calculated high pressure crystal structure transformations for phosphorusAhuja, Rajeev et al. | 2003
- 288
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Thermo‐ and galvanomagnetic measurements of semiconductors at ultrahigh pressureShchennikov, Vladimir V. / Ovsyannikov, Sergey V. et al. | 2003
- 288
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Layered semiconductors - Thermo- and galvanomagnetic measurements of semiconductors at ultrahigh pressureShchennikov, Vladimir V. et al. | 2003
- 293
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THz lasing due to resonant acceptor states in strained p‐Ge and SiGe quantum‐well structuresKagan, M. S. / Altukhov, I. V. / Chirkova, E. G. / Sinis, V. P. / Troeger, R. T. / Ray, S. K. / Kolodzey, J. et al. | 2003
- 293
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Bandstructure and optical properties - THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structuresKagan, M.S. et al. | 2003
- 297
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Bandstructure and optical properties - Hydrostatic pressure coefficients of the valence band maximum in Ge, InSb, InAs, and GaAsDaunov, M.I. et al. | 2003
- 297
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Hydrostatic pressure coefficients of the valence band maximum in Ge, InSb, InAs, and GaAsDaunov, M. I. / Kamilov, I. K. / Gabibov, S. F. / Magomedov, A. B. et al. | 2003
- 302
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Electronic and structural study of beta -FeSi2 under high pressureMori, Y. / Ikai, T. / Teranishi, R. / Takarabe, K. et al. | 2003
- 302
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Bandstructure and optical properties - Electronic and structural study of b-FeSi2 under high pressureMori, Y. et al. | 2003
- 302
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Electronic and structural study of β‐FeSi2 under high pressureMori, Y. / Ikai, T. / Teranishi, R. / Takarabe, K. et al. | 2003
- 307
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Bandstructure and optical properties - Pressure dependence of the natural birefiringence in the II-IV-V2 chalcopyrite CdGeP2Choi, In-Hwan et al. | 2003
- 307
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Pressure dependence of the natural birefringence in the II–IV–V2 chalcopyrite CdGeP2Choi, In‐Hwan / Yu, P. Y. et al. | 2003
- 312
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Bandstructure and optical properties - The effect of pressure on the radiative efficiency of InAs based light emitting diodesChoulis, S.A. et al. | 2003
- 312
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The effect of pressure on the radiative efficiency of InAs based light emitting diodesChoulis, S. A. / Andreev, A. / Merrick, M. / Jin, S. / Clarke, D. G. / Murdin, B. N. / Adams, A. R. / Krier, A. / Sherstnev, V. V. et al. | 2003
- 317
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High‐pressure phase in the chalcopyrites CuGaTe2 and CuInTe2Mori, Y. / Ikai, T. / Takarabe, K. et al. | 2003
- 317
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Structural properties and phase transitions - High-pressure phase in the chalcopyrites CuGaTe2 and CuInTe2Mori, Y. et al. | 2003
- 321
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Raman scattering in CdGa2Se4 under pressureMitani, T. / Naitou, T. / Matsuishi, K. / Onari, S. / Allakhverdiev, K. / Gashimzade, F. / Kerimova, T. et al. | 2003
- 321
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Structural properties and phase transitions - Raman scattering in CdGa2Se4 under pressureMitani, T. et al. | 2003
- 326
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Variation of the optical absorption edge in AgGaS2 single crystals at high pressurePower, Ch. / Gilliland, S. / Segura, A. / Gonzalez, J. et al. | 2003
- 326
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Structural properties and phase transitions - Variation of the optical absorption edge in AgGaS2 single crystals at high pressurePower, Ch et al. | 2003
- 331
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Structural properties and phase transitions - Anomalous pressure dependence of acoustic phonons of AgGaSe2 investigated by inelastic neutron scattering to 4.3 GPa (invited)Klotz, S. et al. | 2003
- 331
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Anomalous pressure dependence of acoustic phonons of AgGaSe2 investigated by inelastic neutron scattering to 4.3 GPaKlotz, S. / Derollez, P. / Fouret, R. / Braden, M. / Hennion, B. / Hubert, Ch. / Meducin, F. / Łażewski, J. / Gonzalez, J. et al. | 2003
- 337
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Structural properties and phase transitions - Ammonium halides NH4Cl, NH4F, and NH4BrTikhomirova, G.V. et al. | 2003
- 337
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Ammonium halides NH4Cl, NH4F, and NH4BrTikhomirova, G. V. / Babushkin, A. N. et al. | 2003
- 341
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Structural properties and phase transitions - High pressure structural phase transitions in IV-VI semiconductorsAhuja, Rajeev et al. | 2003
- 341
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High pressure structural phase transitions in IV–VI semiconductorsAhuja, Rajeev et al. | 2003
- 348
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Pressure evolution of the phonon modes and force constants of Tb3Al5O12 and Lu3Al5O12Papagelis, K. / Arvanitidis, J. / Ves, S. / Kourouklis, G. A. et al. | 2003
- 348
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Structural properties and phase transitions - Pressure evolution of the phonon modes and force constants of Tb3Al5O12 and Lu3Al5O12Papagelis, K. et al. | 2003
- 354
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Elastic properties and pressure‐induced phase transitions of single‐walled carbon nanotubesReich, S. / Thomsen, C. / Ordejón, P. et al. | 2003
- 354
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Carbon nanotubes and molecular systems - Elastic properties and pressure-induced phase transitions of single-walled carbon nanotubes (invited)Reich, S. et al. | 2003
- 360
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Carbon nanotubes and molecular systems - Conductivity of graphite and fullerene under pressures up to 50 GPaTikhomirova, G.V. et al. | 2003
- 360
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Conductivity of graphite and fullerene under pressures up to 50 GPaTikhomirova, G. V. / Babushkin, A. N. et al. | 2003
- 364
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Radial and tangential vibrational modes of HiPCO‐derived carbon nanotubes under pressureVenkateswaran, U. D. / Gosselin, M.‐É. / Postek, B. / Masica, D. L. / Chen, G. / Gupta, R. / Eklund, P. C. et al. | 2003
- 364
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Carbon nanotubes and molecular systems - Radial and tangential vibrational modes of HiPCO-derived carbon nanotubes under pressureVenkateswaran, U.D. et al. | 2003
- 369
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The effect of anisotropic intermolecular interactions on the pressure response of polymeric fullerenesArvanitidis, J. / Assimopoulos, S. / Papagelis, K. / Ves, S. / Prassides, K. / Iwasa, Y. / Kourouklis, G.A. et al. | 2003
- 369
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Carbon nanotubes and molecular systems - The effect of anisotropic intermolecular interactions on the pressure response of polymeric fullerenes (invited)Arvanitidis, J. et al. | 2003
- 374
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Electronic structure and defects - Theoretical studies of semiconductors, with and without defects, under pressure (invited)Christensen, N.E. et al. | 2003
- 374
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Theoretical studies of semiconductors, with and without defects, under pressureChristensen, N.E. / Gorczyca, I. / Svane, A. / Gonzalez Szwacki, N. / Boguslawski, P. et al. | 2003
- 384
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Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wellsChoulis, S. A. / Hosea, T. J. C. / Tomić, S. / Kamal‐Saadi, M. / Weinstein, B. A. / O'Reilly, E. P. / Adams, A. R. / Klar, P. J. et al. | 2003
- 384
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Electronic structure and defects - Pressure and k . p studies of band parameters in dilute-N GaInNAs-GaAs multiple quantum wellsChoulis, S.A. et al. | 2003
- 390
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Thermoactivated conductivity in p‐GaAs/Al0.5Ga0.5As below 5 K under combined influence of illumination and uniaxial stressKraak, W. / Minina, N. Ya. / Ilievsky, A. A. / Sorensen, C. B. / Berman, I. V. et al. | 2003
- 390
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Electronic structure and defects - Thermoactivated conductivity in p-GaAs-Al0.5Ga0.5As below 5 K under combined influence of illumination and uniaxial stressKraak, W. et al. | 2003
- 396
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Reliable non‐linear elastic constantsDunstan, D. J. / Bosher, S. H. B. et al. | 2003
- 396
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Electronic structure and defects - Reliable non-linear elastic constantsDunstan, D.J. et al. | 2003
- 401
-
Electronic structure and defects - Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloyLi, G.H. et al. | 2003
- 401
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Pressure behavior of Te isoelectronic centers in S‐rich ZnS1–xTex alloyLi, G. H. / Fang, Z. L. / Su, F. H. / Ma, B. S. / Ding, K. / Han, H. X. / Sou, I. K. / Ge, W. K. et al. | 2003
- 407
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High‐pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasersMarko, I.P. / Andreev, A.D. / Adams, A.R. / Krebs, R. / Reithmaier, J.P. / Forchel, A. et al. | 2003
- 407
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Electronic structure and defects - High-pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs-GaInAs quantum dot lasersMarko, I.P. et al. | 2003
- 412
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Electronic structure and defects - High-pressure photoluminescence study of the electronic structure of InP-GaP quantum dotsKristukat, C. et al. | 2003
- 412
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High‐pressure photoluminescence study of the electronic structure of InP/GaP quantum dotsKristukat, C. / Goñi, A.R. / Hatami, F. / Dreßler, S. / Masselink, W.T. / Thomsen, C. et al. | 2003
- 417
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Poster sessions - Correlation between lasing properties and band alignment of edge emitting lasers with (Ga,In) (N,As)-Ga(N,As) active regionsGrüning, H. et al. | 2003
- 417
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Correlation between lasing properties and band alignment of edge emitting lasers with (Ga,In)(N,As)/Ga(N,As) active regionsGrüning, H. / Klar, P. J. / Heimbrodt, W. / Weiser, G. / Koch, J. / Nau, S. / Stolz, W. / Fehse, R. / Adams, A. R. / Ramakrishnan, A. et al. | 2003
- 423
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Absolute deformation potential with a compressed atom modelKosaka, K. / Takarabe, K. et al. | 2003
- 423
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Poster sessions - Absolute deformation potential with a compressed atom modelKosaka, K. et al. | 2003
- 427
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Large excitation‐power dependence of pressure coefficients of InxGa1–xN/InyGa1–yN quantum wellsLi, Q. / Fang, Z.L. / Xu, S.J. / Li, G.H. / Xie, M.H. / Tong, S.Y. / Zhang, X.H. / Liu, W. / Chua, S.J. et al. | 2003
- 427
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Poster sessions - Large excitation-power dependence of pressure coefficients of InxGa1-xN-InyGa1-yN quantum wellsLi, Q. et al. | 2003
- 432
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Pressure dependence of optical phonons in ZnCdSe alloysCamacho, J. / Loa, I. / Cantarero, A. / Syassen, K. / Hernández‐Calderón, I. / González, L. et al. | 2003
- 432
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Poster sessions - Pressure dependence of optical phonons in ZnCdSe alloysCamacho, J. et al. | 2003
- 437
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Poster sessions - On the elastic properties of InAs under hydrostatic pressureEllaway, S.W. et al. | 2003
- 437
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On the elastic properties of InAs under hydrostatic pressureEllaway, S.W. / Faux, D.A. et al. | 2003
- 441
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Pressure and temperature dependence of the band‐gap in CdTeGilliland, S. / González, J. / Güder, H. S. / Segura, A. / Mora, I. / Muñoz, V. et al. | 2003
- 441
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Poster sessions - Pressure and temperature dependence of the band-gap in CdTeGilliland, S. et al. | 2003
- 446
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Poster sessions - Ab initio study of BAs under pressureHerrera-Cabrera, M.J. et al. | 2003
- 446
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Ab initio study of BAs under pressureHerrera‐Cabrera, M. J. / Rodríguez‐Hernández, P. / Muñoz, A. et al. | 2003
- 452
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Poster sessions - Theoretical study of ZnS under high pressureLopez-Solano, J. et al. | 2003
- 452
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Theoretical study of ZnS under high pressureLópez‐Solano, J. / Mujica, A. / Rodríguez‐Hernández, P. / Muñoz, A. et al. | 2003
- 456
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Poster sessions - Effect of pressure on structural properties and energy band gaps of g-InSeOlguin, D. et al. | 2003
- 456
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Effect of pressure on structural properties and energy band gaps of γ‐InSeOlguín, D. / Cantarero, A. / Ulrich, C. / Syassen, K. et al. | 2003
- 464
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First‐principles study of phonon‐mode softening under pressure: the case of GaN and AlNWagner, J.‐M. / Bechstedt, F. et al. | 2003
- 464
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Poster sessions - First-principles study of phonon-mode softening under pressure: The case of GaN and AlNWagner, J.-M. et al. | 2003
- 470
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Poster sessions - LiH under high pressure and high temperature: A first-principles studyWang, Y. et al. | 2003
- 470
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LiH under high pressure and high temperature: A first‐principles studyWang, Y. / Ahuja, R. / Johansson, B. et al. | 2003
- 474
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Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 μm quantum well lasersSweeney, S. J. / Jin, S. R. / Tomić, S / Adams, A. R. / Higashi, T. / Riechert, H. / Thijs, P. J. A. et al. | 2003
- 474
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Poster sessions - Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 mm quantum well lasersSweeney, S.J. et al. | 2003
- 480
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Poster sessions - Gain-cavity alignment profiling of 1.3 mm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniquesKnowles, G. et al. | 2003
- 480
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Gain‐cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniquesKnowles, G. / Tomić, S. / Jin, S. / Fehse, R. / Sweeney, S. J. / Sale, T. E. / Adams, A. R. et al. | 2003
- 486
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Quantifying pressure‐dependent recombination currents in GaInNAs lasers using spontaneous emission measurementsJin, S. R. / Sweeney, S. J. / Tomić, S. / Adams, A. R. / Riechert, H. et al. | 2003
- 486
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Poster sessions - Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurementsJin, S.R. et al. | 2003
- 491
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Wavelength dependence of the modal refractive index in 1.3 μm InGaAsP, AlGaInAs and GaInNAs lasers using high pressureJin, S. R. / Sweeney, S. J. / Adams, A. R. / Higashi, T. / Riechert, H. / Thijs, P. J. A. et al. | 2003
- 491
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Poster sessions - Wavelength dependence of the modal refractive index in 1.3 mm InGaAsP, AlGaInAs and GaInNAs lasers using high pressureJin, S.R. et al. | 2003
- 496
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Poster sessions - Pressure dependence of photoluminescence spectra of self-assembled InAs-GaAs quantum dotsManjon, F.J. et al. | 2003
- 496
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Pressure dependence of photoluminescence spectra of self‐assembled InAs/GaAs quantum dotsManjón, F.J. / Goñi, A.R. / Syassen, K. / Heinrichsdorff, F. / Thomsen, C. et al. | 2003
- 501
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Pressure effects on transition metal monoxide NiOIshida, Y. / Mita, Y. / Kobayashi, M. / Endo, S. et al. | 2003
- 501
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Poster sessions - Pressure effects on transition metal monoxide NiOIshida, Y. et al. | 2003
- 505
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Poster sessions - Accurate determination of (AlxGa1-x)0.5In0.5P alloy pressure coefficientsHarada, J. et al. | 2003
- 505
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Accurate determination of (AlxGa1–x)0.5In0.5P alloy pressure coefficientsHarada, J. / Kobayashi, T. / Prins, A. D. / Dunstan, D. J. et al. | 2003
- 509
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Electronic structure and optical properties of CdTe rock‐salt high pressure phaseGüder, H. S. / Gilliland, S. / Sans, J. A. / Segura, A. / González, J. / Mora, I. / Muñoz, V. / Muñoz, A. et al. | 2003
- 509
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Poster sessions - Electronic structure and optical properties of CdTe rock-salt high pressure phaseGüder, H.S. et al. | 2003
- 514
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Electronic structure of tellurium under high pressureNishikawa, Atsushi / Shindo, Koichi et al. | 2003
- 514
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Poster sessions - Electronic structure of tellurium under high pressureNishikawa, Atsushi et al. | 2003
- 517
-
Poster sessions - Raman scattering under pressure and the phase transition in e-GaSeKulibekov, A.M. et al. | 2003
- 517
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Raman scattering under pressure and the phase transition in ε‐GaSeKulibekov, A. M. / Olijnyk, H. P. / Jephcoat, A. P. / Salaeva, Z. Y. / Onari, S. / Allakhverdiev, K. R. et al. | 2003
- 517
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Raman scattering under pressure and the phase transition in epsilon -GaSeKulibekov, A.M. / Olijnyk, H.P. / Jephcoat, A.P. / Salaeva, Z.Y. / Onari, S. / Allakhverdiev, K.R. et al. | 2003
- 521
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Semiconductor–metal transitions in lead chalcogenides at high pressureOvsyannikov, S. V. / Shchennikov, V. V. / Popova, S. Vict. / Derevskov, A. Yu. et al. | 2003
- 521
-
Poster sessions - Semiconductor-metal transitions in lead chalcogenides at high pressureOvsyannikov, S.V. et al. | 2003
- 526
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Pressure induced phase transitions of BNsShirai, K. / Fujita, H. / Katayama‐Yoshida, H. et al. | 2003
- 526
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Poster sessions - Pressure induced phase transitions of BNsShirai, K. et al. | 2003
- 531
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Poster sessions - Experimental study of pressure influence on tunnel transport into 2DEGDizhur, E.M. et al. | 2003
- 531
-
Experimental study of pressure influence on tunnel transport into 2DEGDizhur, E.M. / Voronovsky, A.N. / Kotelnikov, I.N. / Dizhur, S.E. / Feiginov, M.N. et al. | 2003
- 536
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Poster sessions - Electrical resistivity of Cu doped As-Se glasses at high pressureRamesh, K. et al. | 2003
- 536
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Electrical resistivity of Cu doped As–Se glasses at high pressureRamesh, K. / Ramesh Rao, N. / Sangunni, K. S. / Gopal, E. S. R. et al. | 2003
- 542
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Poster sessions - Auger recombination in InGaAs-AlGaAs-based MQW semiconductor lasers emitting at 980 nmLock, D. et al. | 2003
- 542
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Auger recombination in InGaAs/AlGaAs‐based MQW semiconductor lasers emitting at 980 nmLock, D. / Sweeney, S. J. / Adams, A. R. / Robbins, D. J. et al. | 2003
- 547
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Poster sessions - Coupling of large optical loss with Auger recombination in 1.3 mm InGaAsP lasers investigated using hydrostatic pressureJin, S.R. et al. | 2003
- 547
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Coupling of large optical loss with Auger recombination in 1.3 μm InGaAsP lasers investigated using hydrostatic pressureJin, S. R. / Sweeney, S. J. / Adams, A. R. / Thijs, P. J. A. et al. | 2003
- 553
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Author Index| 2003
- 557
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2nd International Conference on Semiconductor Quantum Dots (QD 2002) in Tokyo, Japan, 30 September–3 October 2002Heitz, R. et al. | 2003
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Papers presented at the Tenth International Conference on High Pressure Semiconductor Physics (HPSP-X) Guilford, UK, 5-8 August 2002| 2003