Erscheinungsjahr
Format
Lizenz
Sprache
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Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors
American Chemical Society | 2012|Schlagwörter: electron devices -
Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors
American Institute of Physics | 2013|Schlagwörter: ELECTRON DEVICES AND APPLICATIONS -
Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer
American Institute of Physics | 2013|Schlagwörter: ELECTRON DEVICES AND APPLICATIONS -
Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Interface properties of Al~2O~3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands
American Institute of Physics | 2013|Schlagwörter: ELECTRON DEVICES AND APPLICATIONS -
Effect of fluorine implantation on recovery characteristics of p-channel MOSFET after negative bias temperature instability stress
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Full potential calculation of electronics and thermoelectric properties of doped
American Institute of Physics | 2013|Schlagwörter: ELECTRON DEVICES AND APPLICATIONS -
High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO~2/SiN/SiO~2 films with thermal treatment
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Leakage current limit of time domain reflectometry in ultrathin dielectric characterization
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Threshold voltage shifts and their variability behaviors in p-channel FETs by high voltage on-state and off-state stress
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Effect of Coulomb interaction on multi-electronwave packet dynamics
American Institute of Physics | 2013|Schlagwörter: ELECTRON DEVICES AND APPLICATIONS -
Robustness of Sn precipitation during thermal oxidation of Ge~1~-~xSn~x on Ge(001)
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Effect of surface pretreatment in the thermal atomic layer deposition of Al~2O~3 for passivation of crystal Si solar cells
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Phosphorous ion implantation into NiGe layer for Ohmic contact formation on n-type Ge
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Saturation of threshold-voltage shift during positive bias temperature instability in HfSiON/SiO~2 n-channel MOSFET and its effect on device lifetime valuation
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
Impact of different dopants on the switching properties of ferroelectric hafniumoxide
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices -
High-quality gate oxide formed at 150 ^oC for flexible electronics
British Library Conference Proceedings | 2014|Schlagwörter: Future electron devices, Electron devices
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