Erscheinungsjahr
Medientyp
Datenquelle
Fach
Sprache
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Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Freier ZugriffAmerican Institute of Physics | 2018| -
Two-Dimensionally Layered p‑Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions
American Chemical Society | 2018| -
Influence of High-Energy Proton Irradiation on β‑Ga2O3 Nanobelt Field-Effect Transistors
American Chemical Society | 2017| -
Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity
NationallizenzRoyal Society of Chemistry | 2016| -
Flexible graphene-based chemical sensors on paper substrates
NationallizenzRoyal Society of Chemistry | 2013| -
1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers
American Institute of Physics | 2017| -
Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching
American Institute of Physics | 2017| -
Review of radiation damage in GaN-based materials and devices
American Institute of Physics | 2013| -
Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon
American Institute of Physics | 2012| -
Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors
American Institute of Physics | 2016| -
Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
American Institute of Physics | 2016| -
Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
American Institute of Physics | 2022| -
Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors
American Institute of Physics | 2012| -
Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors
American Institute of Physics | 2013| -
Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
American Institute of Physics | 2018| -
Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors
American Institute of Physics | 2018| -
Effect of Downstream Plasma Exposure on Schottky Diodes Fabricated on β-Ga~2O~3
British Library Conference Proceedings | 2021| -
Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes
American Institute of Physics | 2013| -
Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes
American Institute of Physics | 2015| -
Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
American Institute of Physics | 2022| -
Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors
American Institute of Physics | 2013| -
Reducing proton radiation vulnerability in AlGaN/GaN high electron mobility transistors with residual strain relief
American Institute of Physics | 2023| -
Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide
American Institute of Physics | 2016| -
GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors
American Institute of Physics | 2012| -
(Keynote) Advances in Ga~2O~3 Processing and Devices
British Library Conference Proceedings | 2017| -
Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors
American Institute of Physics | 2015| -
Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors
American Institute of Physics | 2016| -
Effects of 340 Kev Proton Irradiation on InGaN/GaN Blue Light-Emitting Diodes
British Library Conference Proceedings | 2015| -
Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes
NationallizenzAmerican Institute of Physics | 2012| -
Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate
American Institute of Physics | 2014| -
(Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC
British Library Conference Proceedings | 2021| -
UV ozone treatment for improving contact resistance on graphene
American Institute of Physics | 2012| -
Electron and Proton Irradiation Damage in β-Ga~2O~3 Vertical Rectifiers
British Library Conference Proceedings | 2018| -
Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors
American Institute of Physics | 2016| -
(Invited) Effect of Temperature and 5 Mev Proton Irradiation Damage on Performance of b-Ga~2O~3 Photodetectors
British Library Conference Proceedings | 2017| -
Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure
American Institute of Physics | 2013|
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