X-ray study of antiphase boundaries in the quadruple-period ordered GaAs~0~.~8~7Sb~0~.~1~3 alloy (Englisch)
- Neue Suche nach: Zhong, Z.
- Neue Suche nach: Holy, V.
- Neue Suche nach: Li, J. H.
- Neue Suche nach: Kulik, J.
- Neue Suche nach: Bai, J.
- Neue Suche nach: Golding, T. D.
- Neue Suche nach: Moss, S. C.
- Neue Suche nach: Zhong, Z.
- Neue Suche nach: Holy, V.
- Neue Suche nach: Li, J. H.
- Neue Suche nach: Kulik, J.
- Neue Suche nach: Bai, J.
- Neue Suche nach: Golding, T. D.
- Neue Suche nach: Moss, S. C.
In:
JOURNAL OF APPLIED PHYSICS
;
90
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644-649
;
2001
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:X-ray study of antiphase boundaries in the quadruple-period ordered GaAs~0~.~8~7Sb~0~.~1~3 alloy
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Beteiligte:Zhong, Z. ( Autor:in ) / Holy, V. ( Autor:in ) / Li, J. H. ( Autor:in ) / Kulik, J. ( Autor:in ) / Bai, J. ( Autor:in ) / Golding, T. D. ( Autor:in ) / Moss, S. C. ( Autor:in )
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Erschienen in:JOURNAL OF APPLIED PHYSICS ; 90 ; 644-649
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Verlag:
- Neue Suche nach: AMERICAN INSTITUTE OF PHYSICS
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Erscheinungsdatum:01.01.2001
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Format / Umfang:6 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 530.5 / 530
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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Datenquelle:
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Inhaltsverzeichnis – Band 90
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- 675
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Bonding structure in amorphous carbon nitride: A spectroscopic and nuclear magnetic resonance studySa´nchez-Lo´pez, J. C. / Donnet, C. / Lefe`bvre, F. / Ferna´ndez-Ramos, C. / Ferna´ndez, A. et al. | 2001
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Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65:H alloys: A phenomenological modelBaeri, P. / Malvezzi, A. M. / Reitano, R. et al. | 2001
- 689
-
Damage production in a-Si under low-energy self-atom bombardmentKoster, Monika / Urbassek, Herbert M. et al. | 2001
- 696
-
Carbon at pressures in the range 0.1–1 TPa (10 Mbar)Nellis, W. J. / Mitchell, A. C. / McMahan, A. K. et al. | 2001
- 699
-
Three-dimensional strain field calculations in multiple InN/AIN wurtzite quantum dotsJogai, B. et al. | 2001
- 699
-
Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dotsJogai, B. et al. | 2001
- 705
-
Sliding and decohesion of S3<111> grain boundary in tungsten: Monte Carlo simulations with many-body ab initio potentialsDorfman, Simon et al. | 2001
- 705
-
Sliding and decohesion of Sigma~3<111> grain boundary in tungsten: Monte Carlo simulations with many-body ab initio potentialsDorfman, S. / Mundim, K. C. / Liubich, V. / Fuks, D. et al. | 2001
- 705
-
Sliding and decohesion of Σ3〈111〉 grain boundary in tungsten: Monte Carlo simulations with many-body ab initio potentialsDorfman, Simon / Mundim, Kleber C. / Liubich, Vlad / Fuks, David et al. | 2001
- 713
-
Statistical analysis of multiple cracking phenomenon of a SiOx thin film on a polymer substrateYanaka, M. / Tsukahara, Y. / Okabe, T. / Takeda, N. et al. | 2001
- 720
-
Elastic properties of zinc tris(thiourea) sulphate single crystalsAlex, A. V. / Philip, J. et al. | 2001
- 724
-
Prediction of amorphous phase stability in the metal–silicon systemsLiu, Y. Q. / Shao, G. / Homewood, K. P. et al. | 2001
- 728
-
Low-temperature specific heat of isotopically modified boron single crystalsHu, Quanli / Noda, Tetsuji / Suzuki, Hiroshi / Numazawa, Takenori / Arai, Osamu / Hirano, Toshiyuki / Nogi, Naoyuki / Tanaka, Satoru et al. | 2001
- 732
-
Statistical analysis of early failures in electromigrationGall, M. / Capasso, C. / Jawarani, D. / Hernandez, R. / Kawasaki, H. / Ho, P. S. et al. | 2001
- 741
-
Atomic-scale graded structure formed by sedimentation of substitutional atoms in a Bi–Sb alloyMashimo, Tsutomu / Ikeda, Taiki / Minato, Ichiro et al. | 2001
- 745
-
Comparison of the thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si systemsLiu, J. F. / Feng, J. Y. / Zhu, J. et al. | 2001
- 750
-
Physical model for the evaluation of solid–liquid interfacial tension in siliconUjihara, Toru / Sazaki, Gen / Fujiwara, Kozo / Usami, Noritaka / Nakajima, Kazuo et al. | 2001
- 756
-
Brillouin scattering investigation of elastic properties of Cu–Mo solid solution thin filmsDjemia, P. / Ganot, F. / Moch, P. / Branger, V. / Goudeau, P. et al. | 2001
- 763
-
Thermal characterization of Bi2Te3/Sb2Te3 superlatticesTouzelbaev, M. N. / Zhou, P. / Venkatasubramanian, R. / Goodson, K. E. et al. | 2001
- 768
-
Characterization of thin film electron emitters by scanning anode field emission microscopyNilsson, L. / Groening, O. / Groening, P. / Kuettel, O. / Schlapbach, L. et al. | 2001
- 781
-
Study of the effect of grain boundary migration on hillock formation in Al thin filmsKim, Deok-kee / Nix, William D. / Vinci, Richard P. / Deal, Michael D. / Plummer, James D. et al. | 2001
- 789
-
Model for band-edge electroluminescence from metal–oxide–semiconductor silicon tunneling diodesChen, Miin-Jang / Liang, Eih-Zhe / Chang, Shu-Wei / Lin, Ching-Fuh et al. | 2001
- 794
-
Doping-induced losses in AlAs/GaAs distributed Bragg reflectorsAsplund, C. / Mogg, S. / Plaine, G. / Salomonsson, F. / Chitica, N. / Hammar, M. et al. | 2001
- 801
-
Quasiphase-matched second-harmonic generation using periodically photoisomerized azo dye doped polymer film waveguideJung, J. H. / Kato, T. / Kinoshita, T. et al. | 2001
- 807
-
Photoluminescence characteristics of ZnTe epilayersYu, Young-Moon / Nam, Sungun / Lee, Ki-Seon / Choi, Yong Dae / O, Byungsung et al. | 2001
- 813
-
Spectroscopic ellipsometry and Raman study of fluorinated nanocrystalline carbon thin filmsLee, Hosun / Kim, In-Young / Han, S.-S. / Bae, B.-S. / Choi, M. K. / Yang, In-Sang et al. | 2001
- 819
-
Uniaxial stress dependence of the binding energy of shallow donor impurities in GaAs–(Ga,Al)As quantum dotsOyoko, H. O. / Duque, C. A. / Porras-Montenegro, N. et al. | 2001
- 824
-
Energetics of native defects in ZnOOba, Fumiyasu / Nishitani, Shigeto R. / Isotani, Seiji / Adachi, Hirohiko / Tanaka, Isao et al. | 2001
- 829
-
Impact ionization rates of semiconductors in an electric field: The effect of collisional broadeningMadureira, Justino R. / Semkat, Dirk / Bonitz, Michael / Redmer, Ronald et al. | 2001
- 837
-
Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequenciesNashima, S. / Morikawa, O. / Takata, K. / Hangyo, M. et al. | 2001
- 843
-
Electronic band structures of GaInNAs/GaAs compressive strained quantum wellsFan, W. J. / Yoon, S. F. et al. | 2001
- 848
-
Full-band-structure calculation of Shockley–Read–Hall recombination rates in InAsKrishnamurthy, Srinivasan / Berding, M. A. et al. | 2001
- 852
-
Identity of long-range surface plasmons along asymmetric structures and their potential for refractometric sensorsPigeon, F. / Salakhutdinov, I. F. / Tishchenko, A. V. et al. | 2001
- 860
-
Trap-assisted tunneling at temperatures near 77 K in laser annealed Si n+-p junctionsSimeonov, S. S. / Kafedjiiska, E. / Szekeres, A. / Ristoscu, C. / Gyorgy, E. / Mihailescu, I. N. et al. | 2001
- 866
-
Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistorsIwata, Hideyuki et al. | 2001
- 871
-
Interference induced oscillations in the tunneling current through ultrathin gate insulatorsMohaidat, Jihad M. et al. | 2001
- 875
-
Effect of pressure on the magnetic and transport properties of the ferrimagnetic semiconductor FeCr2S4Tsurkan, V. / Fita, I. / Baran, M. / Puzniak, R. / Samusi, D. / Szymczak, R. / Szymczak, H. / Klimm, S. / Klemm, M. / Horn, S. et al. | 2001
- 882
-
Bulk-hardened magnets based on Y2Co17Gabay, A. M. / Zhang, Y. / Hadjipanayis, G. C. et al. | 2001
- 891
-
Experimental evidence of monomer contribution to the static magnetic birefringence in magnetic fluidsBakuzis, A. F. / Skeff Neto, K. / Silva, L. P. / Azevedo, R. B. / Morais, P. C. et al. | 2001
- 896
-
Sol–gel derived grain oriented barium strontium titanate thin films for phase shifter applicationsMajumder, S. B. / Jain, M. / Martinez, A. / Katiyar, R. S. / Van Keuls, F. W. / Miranda, F. A. et al. | 2001
- 904
-
Phase transitions and microwave dielectric properties in the perovskite-like Ca(Al0.5Nb0.5)O3−CaTiO3 systemLevin, I. / Chan, J. Y. / Maslar, J. E. / Vanderah, T. A. / Bell, S. M. et al. | 2001
- 915
-
Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B&hthinsp;GaAs substratesCho, Soohaeng / Majerfeld, A. / Sanz-Herva´s, A. / Sa´nchez, J. J. / Sa´nchez-Rojas, J. L. / Izpura, I. et al. | 2001
- 918
-
Physical and electrical characterization of ultrathin yttrium silicate insulators on siliconChambers, J. J. / Parsons, G. N. et al. | 2001
- 934
-
Dielectric and electric properties of donor- and acceptor-doped ferroelectric SrBi2Ta2O9Kumar, M. Mahesh / Ye, Z.-G. et al. | 2001
- 942
-
Fabrication and integration possibilities of ultrasmall quantum dots in silicon-on-insulator materialTilke, A. / Blick, R. H. / Lorenz, H. et al. | 2001
- 947
-
Effects of electron-beam exposure on a ruthenium nanocluster polymerThomas, M. D. R. / Ahmed, H. / Sanderson, K. M. / Shephard, D. S. / Johnson, B. F. G. / Ozkaya, D. / Sharma, N. / Humphreys, C. et al. | 2001
- 953
-
Variance analysis of the Coulomb blockade parameters in nanometer-size disordered arraysLeroy, Y. / Cordan, A. S. / Goltzene´, A. et al. | 2001
- 958
-
The formation and characterization of silver clusters in zirconiaGovindaraj, R. / Kesavamoorthy, R. / Mythili, R. / Viswanathan, B. et al. | 2001
- 964
-
Surface modification of CdS nanocrystallites doped in SiO2 matrixWang, H. / Zhu, Y. / Ong, P. P. et al. | 2001
- 969
-
Enhanced brightness in organic light-emitting diodes using a carbon nanotube composite as an electron-transport layerFournet, P. / Coleman, J. N. / Lahr, B. / Drury, A. / Blau, W. J. / O’Brien, D. F. / Ho¨rhold, H.-H. et al. | 2001
- 976
-
Influence of electrical stress voltage on cathode degradation of organic light-emitting devicesLin, Karen Ke / Chua, Soo Jin / Wei-Wang / Lim, Shuang Fang et al. | 2001
- 980
-
Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodesGaleckas, A. / Linnros, J. / Breitholtz, B. / Bleichner, H. et al. | 2001
- 985
-
Thermal admittance spectroscopy of Mg-doped GaN Schottky diodesNguyen, N. D. / Germain, M. / Schmeits, M. / Schineller, B. / Heuken, M. et al. | 2001
- 994
-
Spatial effects on ideality factor of amorphous silicon pin diodesKroon, M. A. / van Swaaij, R. A. C. M. M. et al. | 2001