X-ray study of antiphase boundaries in the quadruple-period ordered GaAs~0~.~8~7Sb~0~.~1~3 alloy (English)
- New search for: Zhong, Z.
- New search for: Holy, V.
- New search for: Li, J. H.
- New search for: Kulik, J.
- New search for: Bai, J.
- New search for: Golding, T. D.
- New search for: Moss, S. C.
- New search for: Zhong, Z.
- New search for: Holy, V.
- New search for: Li, J. H.
- New search for: Kulik, J.
- New search for: Bai, J.
- New search for: Golding, T. D.
- New search for: Moss, S. C.
In:
JOURNAL OF APPLIED PHYSICS
;
90
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644-649
;
2001
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ISSN:
- Article (Journal) / Print
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Title:X-ray study of antiphase boundaries in the quadruple-period ordered GaAs~0~.~8~7Sb~0~.~1~3 alloy
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Contributors:Zhong, Z. ( author ) / Holy, V. ( author ) / Li, J. H. ( author ) / Kulik, J. ( author ) / Bai, J. ( author ) / Golding, T. D. ( author ) / Moss, S. C. ( author )
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Published in:JOURNAL OF APPLIED PHYSICS ; 90 ; 644-649
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Publisher:
- New search for: AMERICAN INSTITUTE OF PHYSICS
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Publication date:2001-01-01
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Size:6 pages
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ISSN:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 530.5 / 530
- Further information on Dewey Decimal Classification
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Classification:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 90
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Slow domains in semi-insulating GaAsNeumann, A. et al. | 2001
- 27
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Characterization of the keyhole formed during pulsed Nd–YAG laser interaction with a Ti–6Al–4V metallic targetPerret, O. / Bizouard, M. / Naudy, Ph. / Pascal, G. / Nore´, D. / Horde´, Y. / Delaisse, Y. et al. | 2001
- 31
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Optical limiting behavior of octa-decyloxy metallo-phthalocyaninesSanghadasa, Mohan / Shin, In-Seok / Clark, Ronald D. / Guo, Huaisong / Penn, Benjamin G. et al. | 2001
- 38
-
Modulation doped InGaAsP quantum well laser emitting at 1.55 mumChoudhury, N. / Dutta, N. K. et al. | 2001
- 38
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Modulation doped InGaAsP quantum well laser emitting at 1.55 μmChoudhury, N. / Dutta, N. K. et al. | 2001
- 38
-
Modulation doped InGaAsP quantum well laser emitting at 1.55 (micro)mChoudhury, N. et al. | 2001
- 43
-
Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodesKlehr, A. / Beister, G. / Erbert, G. / Klein, A. / Maege, J. / Rechenberg, I. / Sebastian, J. / Wenzel, H. / Tra¨nkle, G. et al. | 2001
- 48
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Effect of light on the polarization of a banana-shaped achiral compound doped with a photoactive azobenzene materialNair, Geetha G. / Prasad, S. Krishna / Hiremath, Uma S. / Yelamaggad, C. V. et al. | 2001
- 53
-
Refractive dispersion curve measurement of KTiOPO4 using periodically segmented waveguides and periodically poled crystalsKatz, M. / Eger, D. / Oron, M. B. / Hardy, A. et al. | 2001
- 59
-
Angular effect in laser removal of spherical silica particles from silicon wafersZheng, Y. W. / Lu, Y. F. / Song, W. D. et al. | 2001
- 64
-
Integrated multi-scale model for ionized plasma physical vapor depositionArunachalam, V. / Rauf, S. / Coronell, D. G. / Ventzek, P. L. G. et al. | 2001
- 74
-
Modification of the short range order in amorphous alloys induced by the swift heavy ion irradiationKopcewicz, M. / Dunlop, A. et al. | 2001
- 81
-
Fe ion implantation in GaN: Damage, annealing, and lattice site locationLiu, C. / Alves , E. / Sequeira, A. D. / Franco, N. / da Silva, M. F. / Soares, J. C. et al. | 2001
- 87
-
Optical properties of self-ion-implanted Si(100) studied by spectroscopic ellipsometryMori, Hirofumi / Adachi, Sadao / Takahashi, Mitsutoshi et al. | 2001
- 94
-
Propagation of coherent x rays in a multistep-index x-ray waveguideBongaerts, J. H. H. / Zwanenburg, M. J. / Zontone, F. / van der Veen, J. F. et al. | 2001
- 101
-
Clustering equilibrium and deactivation kinetics in arsenic doped siliconNobili, D. / Solmi, S. / Shao, J. et al. | 2001
- 108
-
Lattice location of hydrogen in Mg doped GaNWampler, W. R. / Myers, S. M. / Wright, A. F. / Barbour, J. C. / Seager, C. H. / Han, J. et al. | 2001
- 118
-
Microstructure of ultrananocrystalline diamond films grown by microwave Ar–CH4 plasma chemical vapor deposition with or without added H2Jiao, S. / Sumant, A. / Kirk, M. A. / Gruen, D. M. / Krauss, A. R. / Auciello, O. et al. | 2001
- 123
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Field dependence of thermally stimulated currents in Alq3Werner, A. G. / Blochwitz, J. / Pfeiffer, M. / Leo, K. et al. | 2001
- 126
-
Modifications of the magnetic properties of ferrites by swift heavy ion irradiationsCostantini, Jean-Marc / Studer, Francis / Peuzin, Jean-Claude et al. | 2001
- 136
-
Dynamic yield and tensile strength of aluminum single crystals at temperatures up to the melting pointKanel, G. I. / Razorenov, S. V. / Baumung, K. / Singer, J. et al. | 2001
- 144
-
Elastic properties of textured diamond and siliconAnastassakis, E. / Siakavellas, M. et al. | 2001
- 153
-
Scaling and modeling in the analysis of dispersive relaxation of ionic materialsMacdonald, J. Ross et al. | 2001
- 162
-
Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400 degrees CFang, Xiaodong / Kobayashi, T. et al. | 2001
- 162
-
Characterization of SrRuO~3 thin film grown by laser ablation at temperatures above 400^oCFang, X. / Kobayashi, T. et al. | 2001
- 162
-
Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400&hthinsp;°CFang, Xiaodong / Kobayashi, Takeshi et al. | 2001
- 162
-
Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400(degree)CFang, Xiaodong et al. | 2001
- 167
-
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active linesTeodorescu, V. / Nistor, L. / Bender, H. / Steegen, A. / Lauwers, A. / Maex, K. / Van Landuyt, J. et al. | 2001
- 175
-
Structural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on p-InSb (111) substratesKim, T. W. / Lee, D. U. / Lee, J. H. / Choo, D. C. / Jung, M. / Yoon, Y. S. et al. | 2001
- 181
-
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beamsUedono, A. / Chichibu, S. F. / Chen, Z. Q. / Sumiya, M. / Suzuki, R. / Ohdaira, T. / Mikado, T. / Mukai, T. / Nakamura, S. et al. | 2001
- 187
-
Estimation of trap levels in SrTiO3 epitaxial films from measurement of (LaSr)MnO3/SrTiO3/(LaSr)TiO3 p-i-n diode characteristicsSugiura, Masanori / Uragou, Kazuyuki / Tachiki, Minoru / Kobayashi, Takeshi et al. | 2001
- 192
-
Self-organized InGaAs quantum dots on GaAs (311)B studied by conductive atomic force microscope tipOkada, Yoshitaka / Miyagi, Masashi / Akahane, Kouichi / Iuchi, Yoshimasa / Kawabe, Mitsuo et al. | 2001
- 197
-
The effects of interdiffusion on the subbands in Ga~xIn~1~-~xN~0~.~0~4As~0~.~9~6/GaAs quantum well for 1.3 and 1.55 mum operation wavelengthsChan, M. C. Y. / Surya, C. / Wai, P. K. A. et al. | 2001
- 197
-
The effects of interdiffusion on the subbands in GaxIn1-xN0.04As0.96-GaAs quantum well for 1.3 and 1.55 (micro)m operation wavelengthsChan, Michael C.Y. et al. | 2001
- 197
-
The effects of interdiffusion on the subbands in GaxIn1−xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengthsChan, Michael C. Y. / Surya, Charles / Wai, P. K. A. et al. | 2001
- 202
-
Growth of Si0.75Ge0.25 alloy layers grown on Si(001) substrates using step-graded short-period (Sim/Gen)N superlatticesRahman, M. M. / Matada, H. / Tambo, T. / Tatsuyama, C. et al. | 2001
- 209
-
Epitaxial growth and electronic structure of a C60 derivative prepared by using a solution spray techniqueShimada, T. / Nakatani, H. / Ueno, K. / Koma, A. / Kuninobu, Y. / Sawamura, M. / Nakamura, E. et al. | 2001
- 213
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Diffusion of chloroaluminum phthalocyanine on MoS2 surface detected by photoemission electron microscopy and metastable electron emission microscopyYasufuku, H. / Ibe, T. / Okumura, M. / Kera, S. / Okudaira, K. K. / Harada, Y. / Ueno, N. et al. | 2001
- 217
-
Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surfacePark, Young-Bae / Rhee, Shi-Woo et al. | 2001
- 222
-
Multiphonon excitonic absorption in semiconductors and quantum wellsBardyszewski, Witold / Prywata, Mirosław / Yevick, David et al. | 2001
- 232
-
Spectroscopic properties of Pr3+-doped Ca4GdO(BO3)3 (GdCOB)Brenier, A. / Kityk, I. V. et al. | 2001
- 237
-
Defects in 30 keV Er+-implanted SiO2/Si studied by positron annihilation and cathodoluminescenceHirata, K. / Arai, H. / Kawasuso, A. / Sekiguchi, T. / Kobayashi, Y. / Okada, S. et al. | 2001
- 243
-
Preparation conditions and optical properties of rare earth ion (Er3+ and Eu3+)-doped alumina films by the aqueous sol–gel methodIshizaka, T. / Kurokawa, Y. et al. | 2001
- 248
-
Microoptical characterization of electroluminescent SrS:Cu,Ag thin films by photo- and cathodoluminescence observationsPoelman, D. / Wauters, D. / Versluys, J. / Van Meirhaeghe, R. L. et al. | 2001
- 252
-
Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaNKim, S. / Henry, R. L. / Wickenden, A. E. / Koleske, D. D. / Rhee, S. J. / White, J. O. / Myoung, J. M. / Kim, K. / Li, X. / Coleman, J. J. et al. | 2001
- 260
-
Microphotoluminescence mapping on CdZnTe: Zn distributionLi, Z.-F. / Lu, W. / Huang, G. S. / Yang, J. R. / He, L. / Shen, S. C. et al. | 2001
- 265
-
Luminescent properties of local atomic order of Er3+ and Yb3+ ions in aluminophosphate glassesd’Acapito, F. / Mobilio, S. / Bruno, P. / Barbier, D. / Philipsen, J. et al. | 2001
- 270
-
Band alignment in organic devices: Photoemission studies of model oligomers on In2O3Blyth, R. I. R. / Duschek, R. / Koller, G. / Netzer, F. P. / Ramsey, M. G. et al. | 2001
- 276
-
Mapping of local stress distributions in SiGe/Si optical channel waveguideRho, H. / Jackson, Howard E. / Weiss, B. L. et al. | 2001
- 283
-
Planar dielectric microcavity light-emitting diodes: Analytical analysis of the extraction efficiencyRoyo, P. / Stanley, R. P. / Ilegems, M. et al. | 2001
- 294
-
Excitation dynamics of dye doped tris(8-hydroxy quinoline) aluminum films studied using time-resolved photoelectron spectroscopyRead, K. / Karlsson, H. S. / Murnane, M. M. / Kapteyn, H. C. / Haight, R. et al. | 2001
- 301
-
Low frequency noise in degenerate semiconductorsDmitriev, A. P. / Borovitskaya, E. / Levinshtein, M. E. / Rumyantsev, S. L. / Shur, M. S. et al. | 2001
- 306
-
Memory effect in the current–voltage characteristic of a low-band gap conjugated polymerTaylor, D. M. / Mills, C. A. et al. | 2001
- 310
-
Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistorsRumyantsev, S. L. / Pala, N. / Shur, M. S. / Gaska, R. / Levinshtein, M. E. / Khan, M. Asif / Simin, G. / Hu, X. / Yang, J. et al. | 2001
- 315
-
Femtosecond energy relaxation of nonthermal electrons injected in p-doped GaAs base of a heterojunction bipolar transistorPrabhu, S. S. / Vengurlekar, A. S. et al. | 2001
- 322
-
Gauge factor enhancement driven by heterogeneity in thick-film resistorsGrimaldi, C. / Ryser, P. / Stra¨ssler, S. et al. | 2001
- 328
-
Interface state generation after hole injectionZhao, C. Z. / Zhang, J. F. / Groeseneken, G. / Degraeve, R. / Ellis, J. N. / Beech, C. D. et al. | 2001
- 337
-
Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopyKoley, G. / Spencer, M. G. et al. | 2001
- 345
-
Reactivity of Au with ultrathin Si layers: A photoemission studyIvanco, J. / Kobayashi, H. / Almeida, J. / Margaritondo, G. / Pincik, E. et al. | 2001
- 351
-
Structural characteristics and magnetic properties of l-MnO2 films grown by plasma-assisted molecular beam epitaxyGuo, L.W. et al. | 2001
- 351
-
Structural characteristics and magnetic properties of λ-MnO2 films grown by plasma-assisted molecular beam epitaxyGuo, L. W. / Peng, D. L. / Makino, H. / Hanada, T. / Hong, S. K. / Sumiyama, K. / Yao, T. / Inaba, K. et al. | 2001
- 351
-
Structural characteristics and magnetic properties of Lambda-MnO~2 films grown by plasma-assisted molecular beam epitaxyGuo, L. W. / Peng, D. L. / Makino, H. / Hanada, T. / Hong, S. K. / Sumiyama, K. / Yao, T. / Inaba, K. et al. | 2001
- 355
-
Generalized proximity effect model in superconducting bi- and trilayer filmsBrammertz, G. / Poelaert, A. / Golubov, A. A. / Verhoeve, P. / Peacock, A. / Rogalla, H. et al. | 2001
- 365
-
Dependence of the giant magnetoresistance on the concentration of magnetic particles in granular compositesXu, C. / Hui, P. M. / Li, Z. Y. et al. | 2001
- 370
-
Effective dynamics for ferromagnetic thin filmsGarcı´a-Cervera, Carlos J. / E, Weinan et al. | 2001
- 375
-
Influence of contact electrodes on leakage characteristics in ferroelectric thin filmsNagaraj, B. / Aggarwal, S. / Ramesh, R. et al. | 2001
- 383
-
Supersonic Love waves in strong piezoelectrics of symmetry mm2Darinskii, A. N. / Weihnacht, M. et al. | 2001
- 389
-
Concentration dependence of the dielectric constant in mixed oxides MxOyMp′OqDevine, R. A. B. / Revesz, A. G. et al. | 2001
- 394
-
Effect of annealing treatments on positive temperature coefficient of resistance properties of barium titanate ceramics and a new model for the positive temperature coefficient of resistance effectGallego, Marina Martinez / West, Anthony R. et al. | 2001
- 404
-
Nanostructure of thin amorphous hydrogenated carbon films studied by positron annihilation and photoluminescenceWang, C. L. / Kobayashi, Y. / Katoh, R. / Suzuki, R. / Ohdaira, T. et al. | 2001
- 411
-
Self-passivated copper as a gate electrode in a poly-Si thin film transistor liquid crystal displayChae, G. S. / Soh, H. S. / Lee, W. H. / Lee, J. G. et al. | 2001
- 416
-
Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuumsLiu, Ling / Wang, Yue / Gong, Hao et al. | 2001
- 421
-
Ultrasonic trapping in capillaries for trace-amount biomedical analysisWiklund, M. / Nilsson, S. / Hertz, H. M. et al. | 2001
- 427
-
Investigation of adsorption and absorption-induced stresses using microcantilever sensorsHu, Zhiyu / Thundat, T. / Warmack, R. J. et al. | 2001
- 432
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Voltage required to detach an adhered particle by Coulomb interaction for micromanipulationTakahashi, Kunio / Kajihara, Hideaki / Urago, Masataka / Saito, Shigeki / Mochimaru, Yoshihiro / Onzawa, Tadao et al. | 2001
- 438
-
Noncontact monitoring of surface-wave nonlinearity for predicting the remaining life of fatigued steelsOgi, Hirotsugu / Hirao, Masahiko / Aoki, Shinji et al. | 2001
- 443
-
Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopyBuh, G. H. / Chung, H. J. / Yi, J. H. / Yoon, I. T. / Kuk, Y. et al. | 2001
- 449
-
Growth of a SiC layer on Si(100) from adsorbed propene by laser meltingDragnea, Bogdan / Boulmer, Jacques / De´barre, Dominique / Bourguignon, Bernard et al. | 2001
- 456
-
Role of laser pulse duration and gas pressure in deposition of AlN thin filmsGyorgy, Eniko / Ristoscu, Carmen / Mihailescu, I. N. / Klini, Argyro / Vainos, N. / Fotakis, C. / Ghica, C. / Schmerber, G. / Faerber, J. et al. | 2001
- 462
-
Thermoelectric properties of spark plasma sintered Ca2.75Gd0.25Co4O9 ceramicsMatsubara, Ichiro / Funahashi, Ryoji / Takeuchi, Tomonari / Sodeoka, Satoshi et al. | 2001
- 466
-
Order on disorder: Copper phthalocyanine thin films on technical substratesPeisert, H. / Schwieger, T. / Auerhammer, J. M. / Knupfer, M. / Golden, M. S. / Fink, J. / Bressler, P. R. / Mast, M. et al. | 2001
- 470
-
Temperature and photopolymerization effects in microhardness of C70 crystalsTachibana, M. / Yamaguchi, T. / Kojima, K. / Sakuma, H. et al. | 2001
- 475
-
Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substratesPritchard, R. E. / Oulton, R. F. / Stavrinou, P. N. / Parry, G. / Williams, R. S. / Ashwin, M. J. / Neave, J. H. / Jones, T. S. et al. | 2001
- 481
-
Control of size and density of InAs/(Al,&hthinsp;Ga)As self-organized islandsBallet, P. / Smathers, J. B. / Yang, H. / Workman, C. L. / Salamo, G. J. et al. | 2001
- 488
-
Effect of A-site cation size mismatch on charge ordering behavior in (La1−xYx)0.5(Ca1−ySry)0.5MnO3Wang, Y. Q. / Maclaren, Ian / Duan, X. F. / Wang, Z. H. / Shen, B. G. et al. | 2001
- 493
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Electrorheology of a zeolite/silicone oil suspension under dc fieldsTian, Yu / Meng, Yonggang / Wen, Shizhu et al. | 2001
- 497
-
Ultrafast directional beam switching in coupled vertical-cavity surface-emitting lasersNing, C. Z. / Goorjian, P. et al. | 2001
- 500
-
Photoreflectance line shape of excitonic transitions analyzed with a redefined set of fitting parametersGhosh, Sandip / Grahn, H. T. et al. | 2001
- 503
-
Interaction of copper metallization with rare-earth metals and silicidesMolna´r, G. L. / Peto¨, G. / Zsoldos, E. / Horva´th, Z. E. et al. | 2001
- 506
-
Abnormal ferroelectric properties of compositionally graded Pb(Zr,Ti)O3 thin films with LaNiO3 bottom electrodesBao, Dinghua / Wakiya, Naoki / Shinozaki, Kazuo / Mizutani, Nobuyasu / Yao, Xi et al. | 2001
- 509
-
Approach to fabricating Co nanowire arrays with perpendicular anisotropy: Application of a magnetic field during depositionGe, Shihui / Li, Chao / Ma, Xiao / Li, Wei / Xi, Li / Li, C. X. et al. | 2001
- 512
-
High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam depositionGuha, S. / Cartier, E. / Bojarczuk, N. A. / Bruley, J. / Gignac, L. / Karasinski, J. et al. | 2001
- 515
-
Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eVZollner, Stefan et al. | 2001
- 518
-
Direct measurement of water self-diffusion in hardening blast furnace slag cement pastes by means of nuclear magnetic resonance techniquesNestle, N. / Galvosas, P. / Ka¨rger, J. et al. | 2001
- 521
-
Magnetic anisotropy in a permalloy microgrid fabricated by near-field optical lithographyLi, S. P. / Lebib, A. / Peyrade, D. / Natali, M. / Chen, Y. / Lew, W. S. / Bland, J. A. C. et al. | 2001
- 524
-
Magnetic entropy change in La~0~.~5~4Ca~0~.~3~2MnO~3~-~d~e~l~t~aXu, Q. Y. / Gu, K. M. / Liang, X. L. / Ni, G. / Wang, Z. M. / Sang, H. / Du, Y. W. et al. | 2001
- 524
-
Magnetic entropy change in La0.54Ca0.32MnO3-dXu, Q.Y. et al. | 2001
- 524
-
Magnetic entropy change in La0.54Ca0.32MnO3−δXu, Q. Y. / Gu, K. M. / Liang, X. L. / Ni, G. / Wang, Z. M. / Sang, H. / Du, Y. W. et al. | 2001
- 527
-
Ferrimagnetic ordering in nanostructured CdFe2O4 spinelChinnasamy, C. N. / Narayanasamy, A. / Ponpandian, N. / Joseyphus, R. Justin / Chattopadhyay, K. / Shinoda, K. / Jeyadevan, B. / Tohji, K. / Nakatsuka, K. / Greneche, J.-M. et al. | 2001
- 533
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Z-scan analyses for PbO-containing glass with large optical nonlinearityHashimoto, Tadanori / Yamamoto, Tsuyoshi / Kato, Tomohiro / Nasu, Hiroyuki / Kamiya, Kanichi et al. | 2001
- 538
-
Microscopic imaging with high energy x-rays by Fourier transform holographyLeitenberger, Wolfram / Snigirev, Anatoly et al. | 2001
- 545
-
Optical-gain enhancement in two-dimensional active photonic crystalsNojima, S. et al. | 2001
- 552
-
Design optimized bistable twisted nematic liquid crystal displayWang, Bin / Bos, Philip J. et al. | 2001
- 556
-
Accurate pattern registration for integrated circuit tomographyLevine, Zachary H. / Grantham, Steven / Neogi, Suneeta / Frigo, Sean P. / McNulty, Ian / Retsch, Cornelia C. / Wang, Yuxin / Lucatorto, Thomas B. et al. | 2001
- 561
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Optical characterization and laser gain modeling of a NdAl3(BO3)4 (NAB) microchip laser crystalJaque, D. / Enguita, O. / Caldin˜o G., U. / Ramı´rez, M. O. / Garcı´a Sole´, J. / Zaldo, C. / Mun˜oz-Santiuste, J. E. / Jiang, A. D. / Luo, Z. D. et al. | 2001
- 570
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One-dimensional fluid model for an rf methane plasma of interest in deposition of diamond-like carbon layersHerrebout, D. / Bogaerts, A. / Yan, M. / Gijbels, R. / Goedheer, W. / Dekempeneer, E. et al. | 2001
- 580
-
Spatial distribution of the absolute densities of CFx radicals in fluorocarbon plasmas determined from single-path infrared laser absorption and laser-induced fluorescenceNakamura, Masayuki / Hori, Masaru / Goto, Toshio / Ito, Masafumi / Ishii, Nobuo et al. | 2001
- 587
-
Experimental and theoretical characterization of an inductively coupled plasma sourceScheubert, P. / Fantz, U. / Awakowicz, P. / Paulin, H. et al. | 2001
- 599
-
Concentration of Li atoms in plasmas produced from laser ablation of LiNbO3Gordillo-Va´zquez, F. J. et al. | 2001
- 607
-
Modeling of plasma dynamics at the air-water interface: Application to laser shock processingMazhukin, V. I. / Nossov, V. V. / Smurov, I. et al. | 2001
- 619
-
Model of a two-stage rf plasma reactor for SiC depositionPetrov, G. M. / Giuliani, J. L. et al. | 2001
- 637
-
Structural properties of the perovskite manganitesLi, J. Q. et al. | 2001
- 644
-
X-ray study of antiphase boundaries in the quadruple-period ordered GaAs0.87Sb0.13 alloyZhong, Zhenyang / Holy´, V. / Li, J. H. / Kulik, J. / Bai, J. / Golding, T. D. / Moss, S. C. et al. | 2001
- 650
-
Defect generation in Cu(In,Ga)Se2 heterojunction solar cells by high-energy electron and proton irradiationJasenek, A. / Rau, U. et al. | 2001
- 659
-
Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometryGiri, P. K. / Tripurasundari, S. / Raghavan, G. / Panigrahi, B. K. / Magudapathy, P. / Nair, K. G. M. / Tyagi, A. K. et al. | 2001
- 670
-
Characterization of process-induced lattice distortion in silicon by double-crystal x-ray topography using a curved collimatorKudo, Y. / Liu, K.-Y. / Kawado, S. / Xiaowei, Z. / Hirano, K. et al. | 2001
- 675
-
Bonding structure in amorphous carbon nitride: A spectroscopic and nuclear magnetic resonance studySa´nchez-Lo´pez, J. C. / Donnet, C. / Lefe`bvre, F. / Ferna´ndez-Ramos, C. / Ferna´ndez, A. et al. | 2001
- 682
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Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65:H alloys: A phenomenological modelBaeri, P. / Malvezzi, A. M. / Reitano, R. et al. | 2001
- 689
-
Damage production in a-Si under low-energy self-atom bombardmentKoster, Monika / Urbassek, Herbert M. et al. | 2001
- 696
-
Carbon at pressures in the range 0.1–1 TPa (10 Mbar)Nellis, W. J. / Mitchell, A. C. / McMahan, A. K. et al. | 2001
- 699
-
Three-dimensional strain field calculations in multiple InN/AIN wurtzite quantum dotsJogai, B. et al. | 2001
- 699
-
Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dotsJogai, B. et al. | 2001
- 705
-
Sliding and decohesion of Sigma~3<111> grain boundary in tungsten: Monte Carlo simulations with many-body ab initio potentialsDorfman, S. / Mundim, K. C. / Liubich, V. / Fuks, D. et al. | 2001
- 705
-
Sliding and decohesion of S3<111> grain boundary in tungsten: Monte Carlo simulations with many-body ab initio potentialsDorfman, Simon et al. | 2001
- 705
-
Sliding and decohesion of Σ3〈111〉 grain boundary in tungsten: Monte Carlo simulations with many-body ab initio potentialsDorfman, Simon / Mundim, Kleber C. / Liubich, Vlad / Fuks, David et al. | 2001
- 713
-
Statistical analysis of multiple cracking phenomenon of a SiOx thin film on a polymer substrateYanaka, M. / Tsukahara, Y. / Okabe, T. / Takeda, N. et al. | 2001
- 720
-
Elastic properties of zinc tris(thiourea) sulphate single crystalsAlex, A. V. / Philip, J. et al. | 2001
- 724
-
Prediction of amorphous phase stability in the metal–silicon systemsLiu, Y. Q. / Shao, G. / Homewood, K. P. et al. | 2001
- 728
-
Low-temperature specific heat of isotopically modified boron single crystalsHu, Quanli / Noda, Tetsuji / Suzuki, Hiroshi / Numazawa, Takenori / Arai, Osamu / Hirano, Toshiyuki / Nogi, Naoyuki / Tanaka, Satoru et al. | 2001
- 732
-
Statistical analysis of early failures in electromigrationGall, M. / Capasso, C. / Jawarani, D. / Hernandez, R. / Kawasaki, H. / Ho, P. S. et al. | 2001
- 741
-
Atomic-scale graded structure formed by sedimentation of substitutional atoms in a Bi–Sb alloyMashimo, Tsutomu / Ikeda, Taiki / Minato, Ichiro et al. | 2001
- 745
-
Comparison of the thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si systemsLiu, J. F. / Feng, J. Y. / Zhu, J. et al. | 2001
- 750
-
Physical model for the evaluation of solid–liquid interfacial tension in siliconUjihara, Toru / Sazaki, Gen / Fujiwara, Kozo / Usami, Noritaka / Nakajima, Kazuo et al. | 2001
- 756
-
Brillouin scattering investigation of elastic properties of Cu–Mo solid solution thin filmsDjemia, P. / Ganot, F. / Moch, P. / Branger, V. / Goudeau, P. et al. | 2001
- 763
-
Thermal characterization of Bi2Te3/Sb2Te3 superlatticesTouzelbaev, M. N. / Zhou, P. / Venkatasubramanian, R. / Goodson, K. E. et al. | 2001
- 768
-
Characterization of thin film electron emitters by scanning anode field emission microscopyNilsson, L. / Groening, O. / Groening, P. / Kuettel, O. / Schlapbach, L. et al. | 2001
- 781
-
Study of the effect of grain boundary migration on hillock formation in Al thin filmsKim, Deok-kee / Nix, William D. / Vinci, Richard P. / Deal, Michael D. / Plummer, James D. et al. | 2001
- 789
-
Model for band-edge electroluminescence from metal–oxide–semiconductor silicon tunneling diodesChen, Miin-Jang / Liang, Eih-Zhe / Chang, Shu-Wei / Lin, Ching-Fuh et al. | 2001
- 794
-
Doping-induced losses in AlAs/GaAs distributed Bragg reflectorsAsplund, C. / Mogg, S. / Plaine, G. / Salomonsson, F. / Chitica, N. / Hammar, M. et al. | 2001
- 801
-
Quasiphase-matched second-harmonic generation using periodically photoisomerized azo dye doped polymer film waveguideJung, J. H. / Kato, T. / Kinoshita, T. et al. | 2001
- 807
-
Photoluminescence characteristics of ZnTe epilayersYu, Young-Moon / Nam, Sungun / Lee, Ki-Seon / Choi, Yong Dae / O, Byungsung et al. | 2001
- 813
-
Spectroscopic ellipsometry and Raman study of fluorinated nanocrystalline carbon thin filmsLee, Hosun / Kim, In-Young / Han, S.-S. / Bae, B.-S. / Choi, M. K. / Yang, In-Sang et al. | 2001
- 819
-
Uniaxial stress dependence of the binding energy of shallow donor impurities in GaAs–(Ga,Al)As quantum dotsOyoko, H. O. / Duque, C. A. / Porras-Montenegro, N. et al. | 2001
- 824
-
Energetics of native defects in ZnOOba, Fumiyasu / Nishitani, Shigeto R. / Isotani, Seiji / Adachi, Hirohiko / Tanaka, Isao et al. | 2001
- 829
-
Impact ionization rates of semiconductors in an electric field: The effect of collisional broadeningMadureira, Justino R. / Semkat, Dirk / Bonitz, Michael / Redmer, Ronald et al. | 2001
- 837
-
Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequenciesNashima, S. / Morikawa, O. / Takata, K. / Hangyo, M. et al. | 2001
- 843
-
Electronic band structures of GaInNAs/GaAs compressive strained quantum wellsFan, W. J. / Yoon, S. F. et al. | 2001
- 848
-
Full-band-structure calculation of Shockley–Read–Hall recombination rates in InAsKrishnamurthy, Srinivasan / Berding, M. A. et al. | 2001
- 852
-
Identity of long-range surface plasmons along asymmetric structures and their potential for refractometric sensorsPigeon, F. / Salakhutdinov, I. F. / Tishchenko, A. V. et al. | 2001
- 860
-
Trap-assisted tunneling at temperatures near 77 K in laser annealed Si n+-p junctionsSimeonov, S. S. / Kafedjiiska, E. / Szekeres, A. / Ristoscu, C. / Gyorgy, E. / Mihailescu, I. N. et al. | 2001
- 866
-
Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistorsIwata, Hideyuki et al. | 2001
- 871
-
Interference induced oscillations in the tunneling current through ultrathin gate insulatorsMohaidat, Jihad M. et al. | 2001
- 875
-
Effect of pressure on the magnetic and transport properties of the ferrimagnetic semiconductor FeCr2S4Tsurkan, V. / Fita, I. / Baran, M. / Puzniak, R. / Samusi, D. / Szymczak, R. / Szymczak, H. / Klimm, S. / Klemm, M. / Horn, S. et al. | 2001
- 882
-
Bulk-hardened magnets based on Y2Co17Gabay, A. M. / Zhang, Y. / Hadjipanayis, G. C. et al. | 2001
- 891
-
Experimental evidence of monomer contribution to the static magnetic birefringence in magnetic fluidsBakuzis, A. F. / Skeff Neto, K. / Silva, L. P. / Azevedo, R. B. / Morais, P. C. et al. | 2001
- 896
-
Sol–gel derived grain oriented barium strontium titanate thin films for phase shifter applicationsMajumder, S. B. / Jain, M. / Martinez, A. / Katiyar, R. S. / Van Keuls, F. W. / Miranda, F. A. et al. | 2001
- 904
-
Phase transitions and microwave dielectric properties in the perovskite-like Ca(Al0.5Nb0.5)O3−CaTiO3 systemLevin, I. / Chan, J. Y. / Maslar, J. E. / Vanderah, T. A. / Bell, S. M. et al. | 2001
- 915
-
Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B&hthinsp;GaAs substratesCho, Soohaeng / Majerfeld, A. / Sanz-Herva´s, A. / Sa´nchez, J. J. / Sa´nchez-Rojas, J. L. / Izpura, I. et al. | 2001
- 918
-
Physical and electrical characterization of ultrathin yttrium silicate insulators on siliconChambers, J. J. / Parsons, G. N. et al. | 2001
- 934
-
Dielectric and electric properties of donor- and acceptor-doped ferroelectric SrBi2Ta2O9Kumar, M. Mahesh / Ye, Z.-G. et al. | 2001
- 942
-
Fabrication and integration possibilities of ultrasmall quantum dots in silicon-on-insulator materialTilke, A. / Blick, R. H. / Lorenz, H. et al. | 2001
- 947
-
Effects of electron-beam exposure on a ruthenium nanocluster polymerThomas, M. D. R. / Ahmed, H. / Sanderson, K. M. / Shephard, D. S. / Johnson, B. F. G. / Ozkaya, D. / Sharma, N. / Humphreys, C. et al. | 2001
- 953
-
Variance analysis of the Coulomb blockade parameters in nanometer-size disordered arraysLeroy, Y. / Cordan, A. S. / Goltzene´, A. et al. | 2001
- 958
-
The formation and characterization of silver clusters in zirconiaGovindaraj, R. / Kesavamoorthy, R. / Mythili, R. / Viswanathan, B. et al. | 2001
- 964
-
Surface modification of CdS nanocrystallites doped in SiO2 matrixWang, H. / Zhu, Y. / Ong, P. P. et al. | 2001
- 969
-
Enhanced brightness in organic light-emitting diodes using a carbon nanotube composite as an electron-transport layerFournet, P. / Coleman, J. N. / Lahr, B. / Drury, A. / Blau, W. J. / O’Brien, D. F. / Ho¨rhold, H.-H. et al. | 2001
- 976
-
Influence of electrical stress voltage on cathode degradation of organic light-emitting devicesLin, Karen Ke / Chua, Soo Jin / Wei-Wang / Lim, Shuang Fang et al. | 2001
- 980
-
Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodesGaleckas, A. / Linnros, J. / Breitholtz, B. / Bleichner, H. et al. | 2001
- 985
-
Thermal admittance spectroscopy of Mg-doped GaN Schottky diodesNguyen, N. D. / Germain, M. / Schmeits, M. / Schineller, B. / Heuken, M. et al. | 2001
- 994
-
Spatial effects on ideality factor of amorphous silicon pin diodesKroon, M. A. / van Swaaij, R. A. C. M. M. et al. | 2001