Effects of surfaces on H‐atom concentration in pulsed and continuous discharges (Englisch)
- Neue Suche nach: Tserepi, Angeliki D.
- Neue Suche nach: Dunlop, James R.
- Neue Suche nach: Preppernau, Bryan L.
- Neue Suche nach: Miller, Terry A.
- Neue Suche nach: Tserepi, Angeliki D.
- Neue Suche nach: Dunlop, James R.
- Neue Suche nach: Preppernau, Bryan L.
- Neue Suche nach: Miller, Terry A.
In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
10
, 4
;
1188-1192
;
1992
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Effects of surfaces on H‐atom concentration in pulsed and continuous discharges
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Weitere Titelangaben:Effects of surfaces on H‐atom concentration
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Beteiligte:Tserepi, Angeliki D. ( Autor:in ) / Dunlop, James R. ( Autor:in ) / Preppernau, Bryan L. ( Autor:in ) / Miller, Terry A. ( Autor:in )
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Erschienen in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films ; 10, 4 ; 1188-1192
-
Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.07.1992
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 10, Ausgabe 4
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- 1295
-
Poly‐Si etching using electron cyclotron resonance microwave plasma sources with multipole confinementGorbatkin, S. M. / Berry, L. A. / Swyers, John et al. | 1992
- 1303
-
Anisotropic highly selective electron cyclotron resonance plasma etching of polysiliconGadgil, P. K. / Dane, D. / Mantei, T. D. et al. | 1992
- 1307
-
Cryogenic electron cyclotron resonance plasma etchingWhang, Ki Woong / Lee, Seok Hyun / Lee, Ho Jun et al. | 1992
- 1313
-
Low temperature etching of silicon trenches with SF6 in an electron cyclotron resonance reactorWatts, A. J. / Varhue, W. J. et al. | 1992
- 1318
-
Surface damage threshold of Si and SiO2 in electron‐cyclotron‐resonance plasmasLee, Young H. et al. | 1992
- 1325
-
X‐ray diagnostics for electron cyclotron resonance processing plasmasCastagna, T. J. / Shohet, J. L. / Ashtiani, K. A. / Hershkowitz, N. et al. | 1992
- 1331
-
Electron–sheath interaction in capacitive radio‐frequency plasmasVender, D. / Boswell, R. W. et al. | 1992
- 1339
-
Two‐dimensional model of glow discharges for a cylindrical geometryHashiguchi, Seishiro et al. | 1992
- 1344
-
Modeling of magnetron etching dischargesMeyyappan, M. / Govindan, T. R. et al. | 1992
- 1349
-
Numerical model of bombarding ions energy distribution function in magnetron dischargeLukyanova, A. V. / Rakhimov, A. T. / Suetin, N. V. et al. | 1992
- 1352
-
High‐power fast‐atom beam source and its application to dry etchingShimokawa, Fusao et al. | 1992
- 1358
-
X‐ray photoelectron spectroscopic study of the interaction of low energy carbon ions with GaAs and InPMeharg, P. F. A. / Ogryzlo, E. A. / Bello, I. / Lau, W. M. et al. | 1992
- 1365
-
X‐ray photoelectron spectroscopic study of the interactions of fluorine ions with gallium arsenideWilliston, L. R. / Bello, I. / Lau, W. M. et al. | 1992
- 1371
-
Hydrogen based reactive ion etching of zinc sulfideOrloff, Glennis J. / Elkind, J. L. / Koch, David et al. | 1992
- 1389
-
Experiments on helicon plasma sourcesChen, Francis F. et al. | 1992
- 1402
-
Characterization of biased electron cyclotron resonance deposited oxidesBulat, E. S. / Ditmer, G. / Herrick, C. / Hankin, S. et al. | 1992
- 1407
-
Mass spectrometric study of tetraethoxysilane and tetraethoxysilane–oxygen plasmas in a diode type radio‐frequency reactorCharles, C. / Garcia, P. / Grolleau, B. / Turban, G. et al. | 1992
- 1414
-
Diamondlike carbon films sputter deposited with an electron cyclotron resonance reactorKidder, J. N. / Varhue, W. J. et al. | 1992
- 1423
-
Diamond deposition in a permanent magnet microwave electron cyclotron resonance dischargeMantei, T. D. / Chang, J. J. et al. | 1992
- 1426
-
Detection of reactions and changes in thin film morphology using stress measurementsGardner, Donald S. / Longworth, Hai P. / Flinn, Paul A. et al. | 1992
- 1442
-
Effects of initial growth conditions on the stress profiles of Mo sputtered onto both moving and stationary substratesBell, Brent C. / Glocker, David A. et al. | 1992
- 1446
-
Residual stress and the effect of implanted argon in films of zirconium nitride made by physical vapor depositionPerry, A. J. / Sartwell, B. D. / Valvoda, V. / Rafaja, D. / Williamson, D. L. / Nelson, A. J. et al. | 1992
- 1453
-
Vapor transport epitaxy, a novel growth technique for compound semiconductorsGurary, A. / Tompa, G. S. / Nelson, C. R. / Stall, R. A. / Liang, S. / Lu, Y. et al. | 1992
- 1458
-
Spin superlattice formation in ZnSe‐based diluted magnetic semiconductor heterostructuresJonker, B. T. / Chou, W. C. / Petrou, A. / Warnock, J. et al. | 1992
- 1462
-
Graded refractive index silicon oxynitride thin film characterized by spectroscopic ellipsometrySnyder, Paul G. / Xiong, Yi‐Ming / Woollam, John A. / Al‐Jumaily, Ghanim A. / Gagliardi, F. J. et al. | 1992
- 1467
-
Preparation, characterization, and chemical properties of ultrathin MgO films on Mo(100)Wu, Ming‐Cheng / Corneille, Jason S. / He, Jian‐Wei / Estrada, Cesar A. / Goodman, D. Wayne et al. | 1992
- 1472
-
In situ characterization of thin‐film defect generation using total internal reflection microscopyWilliams, F. L. / Petersen, G. A. / Carmiglia, C. K. / Pond, B. J. et al. | 1992
- 1479
-
Process effects on structural properties of TiO2 thin films by reactive sputteringWicaksana, Dwi / Kobayashi, Akihiko / Kinbara, Akira et al. | 1992
- 1483
-
TiOx film formation process by reactive sputteringKinbara, A. / Kusano, E. / Baba, S. et al. | 1992
- 1488
-
Effects of space charge on ion energy in ionized cluster beam film depositionUrban, Frank K. / Feng, Susan W. et al. | 1992
- 1493
-
Effect of deposition technique on the As‐deposited microstructure of copper thin filmsWalsh, L. Harper / Feilchenfeld, Natalie B. / Schwarz, J. A. et al. | 1992
- 1497
-
Study of the oxygen transport through Ag (110), Ag (poly), and Ag 2.0 ZrOutlaw, R. A. / Wu, D. / Davidson, M. R. / Hoflund, Gar B. et al. | 1992
- 1503
-
Synthesis and structural characteristics of ion‐beam sputtered multilayer Ag/Al thin filmsKim, C. / Qadri, S. B. et al. | 1992
- 1508
-
Micrometer patterning of phthalocyanine derivatives by selective chemical vapor deposition methodSekiguchi, A. / Pasztor, K. / Shimo, N. / Masuhara, H. et al. | 1992
- 1511
-
X‐ray photoelectron spectroscopy characterization of a nonsuperconducting Y–Ba–Cu–O superconductor–normal‐metal–superconductor barrier materialVasquez, R. P. / Hunt, B. D. / Foote, M. C. / Bajuk, L. J. et al. | 1992
- 1514
-
Chemical vapor depositing of metal fluoridesSarhangi, A. / Power, J. M. et al. | 1992
- 1518
-
Structural anisotropy in oblique incidence thin metal filmsTait, R. N. / Smy, T. / Brett, M. J. et al. | 1992
- 1522
-
Synthesis and structure of a superconducting Au–Nb superlatticeJankowski, A. F. et al. | 1992
- 1526
-
Manifestation of electric dipole selection rules in angle resolved photoemission spectra from zinc blende semiconductorsNiles, David W. / Höchst, Hartmut et al. | 1992
- 1531
-
Nucleation and growth of DyBa2Cu3O7−x thin films on SrTiO3 substrates studied by transmission electron microscopy and atomic force microscopyAgrawal, V. / Chandrasekhar, N. / Zhang, Y. J. / Achutharaman, V. S. / Mecartney, M. L. / Goldman, A. M. et al. | 1992
- 1537
-
Study of the surface morphology and growth mode of in situ ion‐beam sputter‐deposited YBa2Cu3O7−δ thin filmsLichtenwalner, D. J. / Auciello, O. / Woolcott, R. R. / Soble, C. N. / Adu‐Poku, R. / Chapman, R. / Rou, S. H. / Duarte, J. / Kingon, A. I. et al. | 1992
- 1544
-
Surface and interface properties of superconducting YBa2Cu3O7−x thin films on GaAs using yttrium stablized ZrO2/Si3N4 as a buffer layerJia, Q. X. / Lee, S. Y. / Shi, Z. Q. / Anderson, W. A. / Shaw, D. T. et al. | 1992
- 1547
-
Study of YBaCuO on W/Si by x‐ray photoelectron spectroscopyChopra, D. R. / Chourasia, A. R. / Chen, Li / Bensaoula, A. H. / Bensaoula, A. et al. | 1992
- 1554
-
Integration of ferroelectric thin films into nonvolatile memoriesSinharoy, S. / Buhay, H. / Lampe, D. R. / Francombe, M. H. et al. | 1992
- 1562
-
Effects of post‐deposition annealing ambient on the electrical characteristics and phase transformation kinetics of sputtered lead zirconate titanate (65/35) thin film capacitorsChikarmane, Vinay / Sudhama, Chandra / Kim, Jiyoung / Lee, Jack / Tasch, Al / Novak, Steve et al. | 1992
- 1569
-
Recent advances in physical vapor growth processes for ferroelectric thin filmsKrupanidhi, S. B. et al. | 1992
- 1578
-
Plasma‐enhanced metalorganic chemical vapor deposition of BaTiO3 filmsVan Buskirk, Peter C. / Gardiner, Robin / Kirlin, Peter S. / Krupanidhi, Salora et al. | 1992
- 1584
-
Structural and chemical composition investigation of thin lead zirconate titanate filmsHuffman, M. / Goral, J. P. / Al‐Jassim, M. M. / Echer, C. et al. | 1992
- 1592
-
Atom assisted sputtering yield amplificationBerg, S. / Barklund, A. M. / Gelin, B. / Nender, C. / Katardjiev, I. et al. | 1992
- 1597
-
Molecular‐dynamics study of film growth with energetic Ag atomsGilmore, C. M. / Sprague, J. A. et al. | 1992
- 1600
-
Effect of oxidant on resputtering of Bi from Bi–Sr–Ca–Cu–O filmsGrace, J. M. / McDonald, D. B. / Reiten, M. T. / Olson, J. / Kampwirth, R. T. / Gray, K. E. et al. | 1992
- 1604
-
Deposition and properties of polycrystalline TiN/NbN superlattice coatingsChu, X. / Wong, M. S. / Sproul, W. D. / Rohde, S. L. / Barnett, S. A. et al. | 1992
- 1610
-
Growth of epitaxial aluminum nitride and aluminum nitride/zirconium nitride superlattices on Si(111)Meng, W. J. / Heremans, J. et al. | 1992
- 1618
-
Formation of polyhedral voids at surface cusps during growth of epitaxial TiN/NbN superlattice and alloy filmsHultman, L. / Wallenberg, L. R. / Shinn, M. / Barnett, S. A. et al. | 1992
- 1625
-
Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interfaceGlass, R. C. / Spellman, L. M. / Tanaka, S. / Davis, R. F. et al. | 1992
- 1631
-
Microstructure and stoichiometry dependence of ion beam nitrides as a function of energy and temperature: A comparative study between Si and SiGeHellman, Olof C. / Herbots, Nicole / Vancauwenberghe, Olivier / Culbertson, R. J. / Croft, W. J. et al. | 1992
- 1637
-
Reactive N+2 ion bombardment of GaAs{110}: A method for GaN thin film growthDeLouise, Lisa A. et al. | 1992
- 1642
-
Deposition of indium nitride by low energy modulated indium and nitrogen ion beamsBello, I. / Lau, W. M. / Lawson, R. P. W. / Foo, K. K. et al. | 1992
- 1647
-
Thin‐film development and methods for compact disk and laser disk manufacturingSchulz, S. / Lacher, R. / Reineck, S. R. / Seiler, R. / Marcantonio, J. et al. | 1992
- 1657
-
In situ measurement of temperature uniformity of disk substrate in an in‐line sputtering systemFujita, E. / Furusawa, K. / Kataoka, H. / Tsumita, N. / Yonekawa, T. / Shige, N. et al. | 1992
- 1662
-
Surface modification of steel sheets using dry processHyodo, T. / Kagechika, H. / Kibe, H. / Yasue, Y. / Okude, N. et al. | 1992
- 1669
-
Ion plating as an industrial manufacturing methodPulker, H. K. et al. | 1992
- 1675
-
Commercial‐scale application of plasma processing for polymeric substrates: From laboratory to productionFelts, J. T. / Grubb, A. D. et al. | 1992
- 1682
-
Low resistance indium tin oxide films on large scale glass substrateOyama, T. / Hashimoto, N. / Shimizu, J. / Akao, Y. / Kojima, H. / Aikawa, K. / Suzuki, K. et al. | 1992
- 1687
-
Comparison of ion‐bombardment removal rates of sputter‐deposited niobium during deposition and after depositionMerz, M. D. / McClanahan, E. D. et al. | 1992
- 1690
-
Analysis of ion scattering by thin SiO2 layers in boron implants through SiO2 into siliconPark, Changhae / Klein, Kevin M. / Yang, Shyh‐Horng / Tasch, Al F. / Simonton, Robert B. / Lux, Gayle E. et al. | 1992
- 1696
-
Approach to estimate gettering effects in Ti–O2 reactive sputtering processKusano, E. / Baba, S. / Kinbara, A. et al. | 1992
- 1701
-
Effects of target microstructure on aluminum alloy sputtered thin film propertiesBailey, R. S. et al. | 1992
- 1706
-
Preparation of low resistivity Cu–1 at. %Cr thin films by magnetron sputteringCabral, C. / Harper, J. M. E. / Holloway, K. / Smith, D. A. / Schad, R. G. et al. | 1992
- 1713
-
Particle contamination during sputter deposition of W–Ti filmsWickersham, C. E. / Poole, J. E. / Mueller, J. J. et al. | 1992
- 1718
-
Mass spectrometric ion analysis in the sputtering of oxide targetsIshibashi, K. / Hirata, K. / Hosokawa, N. et al. | 1992
- 1723
-
Deposition and properties of diamondlike carbon films produced in microwave and radio‐frequency plasmaRaveh, A. / Klemberg‐Sapieha, J. E. / Martinu, L. / Wertheimer, M. R. et al. | 1992
- 1728
-
Hydrogenated amorphous silicon thin films deposited by triode assisted reactive sputteringSoukup, R. J. / Kantor, K. J. et al. | 1992
- 1734
-
Comparison of stress and structural composition of sputter deposited thick coatings of TiB2+Ni on polymeric compositesTaylor, K. A. / Emrick, A. J. et al. | 1992
- 1740
-
Cathodic arc evaporation in thin film technologyVyskočil, J. / Musil, J. et al. | 1992
- 1749
-
Properties of (Ti1−xAlx)N coatings for cutting tools prepared by the cathodic arc ion plating methodTanaka, Y. / Gür, T. M. / Kelly, M. / Hagstrom, S. B. / Ikeda, T. / Wakihira, K. / Satoh, H. et al. | 1992
- 1757
-
Modification of chemical properties of materials by ion beam mixing and ion beam assisted depositionWolf, G. K. et al. | 1992
- 1765
-
Enhanced sputtering of one species in the processing of multielement thin filmsHarper, J. M. E. / Berg, S. / Nender, C. / Katardjiev, I. V. / Motakef, S. et al. | 1992
- 1772
-
Reactive alternating current magnetron sputtering of dielectric layersScherer, M. / Schmitt, J. / Latz, R. / Schanz, M. et al. | 1992
- 1777
-
Growth conditions for sputter deposited niobium oxidesLee, R. C. / Aita, C. R. et al. | 1992
- 1784
-
Reactive sputtering with an unbalanced magnetronHowson, R. P. / Ja’fer, H. A. et al. | 1992
- 1791
-
High rate sputter deposition of wear resistant tantalum coatingsMatson, D. W. / Merz, M. D. / McClanahan, E. D. et al. | 1992
- 1797
-
Characterization of TiN films deposited using multicathode unbalanced magnetronsRohde, S. L. / Nelson, A. J. / Mason, A. / Sproul, W. D. et al. | 1992
- 1804
-
Diagnostics of dual source reactive magnetron sputter deposition of aluminum nitride and zirconium nitride thin filmsSell, Jeffrey A. / Meng, W. J. / Perry, Thomas A. et al. | 1992
- 1809
-
Laser ablation deposition of TiN filmsKools, J. C. S. / Nillesen, C. J. C. M / Brongersma, S. H. / van de Riet, E. / Dieleman, J. et al. | 1992
- 1815
-
Growth of ferroelectric oxide thin films by excimer laser ablationKrupanidhi, S. B. / Maffei, N. / Roy, D. / Peng, C. J. et al. | 1992
- 1821
-
High quality YBCO films grown over large areas by pulsed laser depositionGreer, J. A. et al. | 1992
- 1827
-
Excimer laser ablation of ferroelectric Pb(Zr,Ti)O3 thin films with low pressure direct‐current glow dischargeRoy, D. / Krupanidhi, S. B. / Dougherty, J. P. et al. | 1992
- 1827
-
Excimer laser ablation of ferroelectric Pb(Zr~1Ti)O~3 thin films with low pressure direct-current glow dischargeRoy, D. / Krupanidhi, S. B. / Dougherty, J. P. et al. | 1992
- 1832
-
In situ spectroscopic ellipsometry in molecular beam epitaxyMaracas, G. N. / Edwards, J. L. / Shiralagi, K. / Choi, K. Y. / Droopad, R. / Johs, B. / Woolam, J. A. et al. | 1992
- 1840
-
Closed‐loop control of growth of semiconductor materials and structures by spectroellipsometryAspnes, D. E. / Quinn, W. E. / Tamargo, M. C. / Gregory, S. / Schwarz, S. A. / Pudensi, M. A. A. / Brasil, M. J. S. P. / Nahory, R. E. et al. | 1992
- 1842
-
Study of GaAs and AlGaAs buried structures by differential photoreflectance spectroscopyBadakhshan, Ali / Sydor, M. / Mitchel, W. C. et al. | 1992
- 1846
-
Reflection high‐energy electron diffraction intensity oscillations and surface reconstructions measured during epitaxial growth of Si(001) from Si2H6 molecular beamsMokler, S. M. / Liu, W. K. / Ohtani, N. / Joyce, B. A. et al. | 1992
- 1856
-
Optical anisotropy spectra of GaAs(001) surfacesChang, Yia‐Chung / Ren, Shang‐Fen / Aspnes, D. E. et al. | 1992
- 1863
-
Impact of vacuum equipment contamination on semiconductor yieldO’Hanlon, John F. / Parks, Harold G. et al. | 1992
- 1869
-
Contamination control in the design and manufacture of gas flow componentsSullivan, John / Schaffer, Skip / King, Steve / Manos, Dennis / Dylla, H. F. et al. | 1992
- 1875
-
Study of particle emission in vacuum from film depositsLogan, Joseph S. / McGill, James J. et al. | 1992
- 1879
-
Estimating the gas partial pressure due to diffusive outgassingSanteler, Donald J. et al. | 1992
- 1884
-
New generation solar control coated productsNikodem, Robert B. et al. | 1992
- 1892
-
Design of selective transmissive/reflective coatings for windowsKoss, V. A. / Belkind, A. / Vossen, J. L. / Wolfe, J. et al. | 1992
- 1897
-
Plasma ion‐assisted deposition: A promising technique for optical coatingsPongratz, S. / Zöller, A. et al. | 1992
- 1905
-
Ion‐assisted sputtering of tungsten oxide solar‐control filmsRubin, M. et al. | 1992
- 1908
-
Cosputtered films of mixed TiO2/SiO2Laird, R. / Belkind, A. et al. | 1992
- 1913
-
Atmospheric pressure chemical vapor deposition of Si and SiGe at low temperaturesSedgwick, T. O. / Agnello, P. D. et al. | 1992
- 1920
-
Growth of GexSi1−x/Si heteroepitaxial films by remote plasma chemical vapor depositionQian, R. / Kinosky, D. / Hsu, T. / Irby, J. / Mahajan, A. / Thomas, S. / Anthony, B. / Banerjee, S. / Tasch, A. / Rabenberg, L. et al. | 1992
- 1927
-
Molecular‐beam epitaxy of strained silicon germanium/silicon structuresKasper, E. / Jorke, H. et al. | 1992
- 1935
-
Electronic and geometric effects in tunneling images of silicon based heteroepitaxial growthKubby, J. A. / Greene, W. J. et al. | 1992
- 1940
-
Structure, chemistry, and band bending at the epitaxial NiAl/p‐GaAs(001) interfaceChambers, S. A. / Loebs, V. A. et al. | 1992
- 1946
-
Effect of orientation on the Schottky barrier height of thermodynamically stable epitaxial metal/GaAs structuresPalmstro/m, C. J. / Cheeks, T. L. / Gilchrist, H. L. / Zhu, J. G. / Carter, C. B. / Wilkens, B. J. / Martin, R. et al. | 1992
- 1954
-
Modification of Schottky barrier heights at InP(110) interfaces using Sb interlayersYamada, Masao / Green, Albert M. / Wahi, Anita. K. / Kendelewicz, Tom / Spicer, William E. et al. | 1992
- 1959
-
Correlation of the interfacial structure and electrical properties of epitaxial silicides on SiSullivan, J. P. / Tung, R. T. / Schrey, F. / Graham, W. R. et al. | 1992
- 1965
-
Potassium adsorption on the Si(100)(2×1) surface studied by Si and K core level photoemission and photoabsorption spectroscopyMa, Y. / Rudolf, P. / Chen, C. T. / Sette, F. et al. | 1992
- 1965
-
Potassium adsorption on the Si(100)(2x1) surface studied by Si and K core level photoemission and photoabsorption spectroscopyMa, Y. / Rudolf, P. / Chen, C. T. / Sette, F. et al. | 1992
- 1970
-
Nucleation and growth of thin metal films on clean and modified metal substrates studied by scanning tunneling microscopyHwang, R. Q. / Günther, C. / Schröder, J. / Günther, S. / Kopatzki, E. / Behm, R. J. et al. | 1992
- 1981
-
Microscopic aspects of the initial growth of metastable fcc iron on Au(111)Stroscio, Joseph A. / Pierce, D. T. / Dragoset, R. A. / First, P. N. et al. | 1992
- 1986
-
Metal/metal homoepitaxy on fcc(111) and fcc(001) surfaces: Deposition and scattering from small islandsSanders, David E. / Halstead, David M. / DePristo, Andrew E. et al. | 1992
- 1993
-
Nucleation and growth of ultrathin Fe and Au films on Cu(100) studied by scanning tunneling microscopyChambliss, D. D. / Wilson, R. J. / Chiang, S. et al. | 1992
- 1999
-
Homoepitaxial growth investigated by high‐resolution He atom scattering: NaCl onto NaCl(001)Duan, J. / Bishop, G. G. / Gillman, E. S. / Chern, G. / Safron, S. A. / Skofronick, J. G. et al. | 1992
- 2006
-
I–III–VI2 compound semiconductors for solar cell applicationsBaşol, Bülent M. et al. | 1992
- 2013
-
Grid metallization and antireflection coating optimization for concentrator and one‐sun photovoltaic solar cellsGessert, T. A. / Coutts, T. J. et al. | 1992
- 2025
-
Barrier‐limited transport in μc‐Si and μc‐Si,C thin films prepared by remote plasma‐enhanced chemical‐vapor depositionLucovsky, G. / Wang, C. / Chen, Y. L. et al. | 1992
- 2032
-
Structure and bonding of tetrahedrally coordinated compound semiconductor cleavage facesDuke, C. B. et al. | 1992
- 2041
-
Extended x‐ray absorption fine structure and x‐ray standing wave study of the clean InP(110) surface relaxationWoicik, J. C. / Kendelewicz, T. / Miyano, K. E. / Cowan, P. L. / Richter, M. / Karlin, B. A. / Bouldin, C. E. / Pianetta, P. / Spicer, W. E. et al. | 1992
- 2046
-
Applications of ab initio quantum molecular dynamical relaxation: Silicon(111)‐5×5 surface reconstruction and aluminum deposited on silicon(100)Adams, Gary B. / Sankey, Otto F. et al. | 1992
- 2052
-
Energy surface and dynamics of Si(100)Gryko, Jan / Allen, Roland E. et al. | 1992