Nitrogen Profiling Boosts Gate Dielectric Performance (Englisch)
In:
Semiconductor international
;
19
, 11
; 22-25
;
1996
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Nitrogen Profiling Boosts Gate Dielectric Performance
-
Erschienen in:Semiconductor international ; 19, 11 ; 22-25
-
Verlag:
- Neue Suche nach: Kiver Publ.
-
Erscheinungsort:Chicago, Ill.
-
Erscheinungsdatum:1996
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 53.00
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 19, Ausgabe 11
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 12
-
Staff| 1996
- 17
-
Editorial: Moore's Law: Its Accuracy Forecasts Continued Growth| 1996
- 21
-
Joint Venture Creates HMG Photonics Inc.| 1996
- 21
-
Industry News| 1996
- 22
-
Intel's Approach to 0.25 m m, 1.8 V Logic Unveiled| 1996
- 22
-
Chip Bookings Stabilize| 1996
- 22
-
Low Energy Boron Implants Successful With Decaborane Molecule| 1996
- 22
-
Nitrogen Profiling Boosts Gate Dielectric Performance| 1996
- 26
-
New Low Temperature AlCu Process Demonstrated| 1996
- 26
-
Amorphous Carbon Proposed as Interlayer Dielectric| 1996
- 28
-
Additional Technology is Solicited for Water Use Reduction| 1996
- 30
-
RF Micro Devices to Build USD 70M Facility| 1996
- 30
-
New Packaging Concept: Application Specific Material| 1996
- 30
-
KTI Inaugurates Expanded DRAM Facility| 1996
- 32
-
Modem Semiconductor Revenues to Reach USD 5.4B by 2000| 1996
- 32
-
Consumer Semiconductor Market Passes USD 24B| 1996
- 34
-
California Legislature Enacts High-Tech Tax Package| 1996
- 34
-
TI and Anam to Manufacture in Korea| 1996
- 39
-
Technology Education Program Begins 2nd Year| 1996
- 39
-
Large Area Image Sensors Developed| 1996
- 40
-
Light Emitting Polymer Plant Planned| 1996
- 40
-
Silicon Reclaim Focus of New Joint Venture| 1996
- 40
-
Fluoroware and Nippon Valqua in Joint Venture| 1996
- 42
-
Altera to Use SuperBGA Package| 1996
- 42
-
FEI and Philips Combine Operations| 1996
- 43
-
185 New Fab Lines by 2003| 1996
- 43
-
Matheson and IGP Form Mountain Electronic Gases| 1996
- 43
-
Venture Capital Investment Surges| 1996
- 48
-
ESD Wrist Strap Grounding Standard Drafted| 1996
- 48
-
SIA Web Site Opens| 1996
- 48
-
SLI Achieves 20 Watt Semiconductor Laser| 1996
- 50
-
New Facility for Manufacturing High Purity Valves| 1996
- 50
-
NEC Opens New HQ| 1996
- 50
-
Temic Reduces Costs| 1996
- 51
-
Stanford's McVittie Wins Annual "Thinker" Award| 1996
- 52
-
Letter to the Editor| 1996
- 56
-
Calendar| 1996
- 66
-
Establishing Standards for Reticle Carriers| 1996
- 66
-
Sub-0.5 m m Geometries Require Tighter Humidity Controls| 1996
- 66
-
Lithography News| 1996
- 72
-
Wafer Processing News| 1996
- 72
-
Controlling Oxide Layers on TiSi2| 1996
- 72
-
Applied Materials and IMEC to Research 0.25 m m Metalization Techniques| 1996
- 74
-
Contamination Control News| 1996
- 76
-
Assembly and Packaging News| 1996
- 76
-
Filler to Improve Thermal Management| 1996
- 80
-
Inspection, Measurement and Test News| 1996
- 82
-
European Report| 1996
- 89
-
Economic Indicator| 1996
- 92
-
Japan Report| 1996
- 114
-
Contamination Control in PVD Cluster Tools Through Mass Spectrometry| 1996
- 125
-
Vacuum Pump Designs to Meet Process Requirements| 1996
- 137
-
Local Planarization Process Developed for Higher Yields| 1996
- 149
-
Selective CVD of Titanium Silicide for Raised Source-Drains| 1996
- 157
-
Understanding the Basics of Process Pressure Control| 1996
- 167
-
Statistical Process Control for Semiconductor Metrology Systems| 1996
- 177
-
Integrated Defect Management Using a Knowledge-Based Approach| 1996
- 187
-
Design and Optimization of Fab Facility Gas Distribution| 1996
- 199
-
Scandinavia lnvestigates Silicon Carbide for High Power Products| 1996
- 199
-
Scandinavia Investigates Silicon Carbide for High Power Products| 1996
- 209
-
Materials For Multichip Modules| 1996
- 221
-
Optimized Background Wafer Process Minimizes Stress Effects| 1996
- 221
-
Optimized backgrind wafer process minimizes stress effectsMendelson, R. / Diefenderfer, D.F. / Gumbert, C.M. / Singh, B. et al. | 1996
- 229
-
AVS 43rd International Symposium: Historic Philadelphia is the setting for this year's AVS Symposium, Oct. 14-18| 1996
- 229
-
AVS 43rd International Symposium| 1996
- 233
-
Austin Hosts SEMICON-Southwest 96| 1996
- 233
-
Austin Hosts SEMICON/Southwest 96: Get "a taste of the Southwest" at the semiconductor equipment materials and services show, Oct. 13-18| 1996
- 233
-
SEMICON-Southwest Product Preview| 1996
- 244
-
New Products| 1996
- 266
-
People in the News| 1996
- 269
-
Company News| 1996
- 270
-
Sales Representatives| 1996
- 272
-
Classified Advertising| 1996
- 274
-
Advertisers' Index| 1996
- 276
-
Industry Observation: Reducing the Cost of Building a Fab| 1996