Nitrogen Profiling Boosts Gate Dielectric Performance (English)
In:
Semiconductor international
;
19
, 11
; 22-25
;
1996
-
ISSN:
- Article (Journal) / Print
-
Title:Nitrogen Profiling Boosts Gate Dielectric Performance
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Published in:Semiconductor international ; 19, 11 ; 22-25
-
Publisher:
- New search for: Kiver Publ.
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Place of publication:Chicago, Ill.
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Publication date:1996
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ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.00
- Further information on Basic classification
- New search for: 770/5670
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Classification:
-
Source:
Table of contents – Volume 19, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 12
-
Staff| 1996
- 17
-
Editorial: Moore's Law: Its Accuracy Forecasts Continued Growth| 1996
- 21
-
Industry News| 1996
- 21
-
Joint Venture Creates HMG Photonics Inc.| 1996
- 22
-
Chip Bookings Stabilize| 1996
- 22
-
Low Energy Boron Implants Successful With Decaborane Molecule| 1996
- 22
-
Intel's Approach to 0.25 m m, 1.8 V Logic Unveiled| 1996
- 22
-
Nitrogen Profiling Boosts Gate Dielectric Performance| 1996
- 26
-
New Low Temperature AlCu Process Demonstrated| 1996
- 26
-
Amorphous Carbon Proposed as Interlayer Dielectric| 1996
- 28
-
Additional Technology is Solicited for Water Use Reduction| 1996
- 30
-
RF Micro Devices to Build USD 70M Facility| 1996
- 30
-
New Packaging Concept: Application Specific Material| 1996
- 30
-
KTI Inaugurates Expanded DRAM Facility| 1996
- 32
-
Consumer Semiconductor Market Passes USD 24B| 1996
- 32
-
Modem Semiconductor Revenues to Reach USD 5.4B by 2000| 1996
- 34
-
California Legislature Enacts High-Tech Tax Package| 1996
- 34
-
TI and Anam to Manufacture in Korea| 1996
- 39
-
Technology Education Program Begins 2nd Year| 1996
- 39
-
Large Area Image Sensors Developed| 1996
- 40
-
Light Emitting Polymer Plant Planned| 1996
- 40
-
Fluoroware and Nippon Valqua in Joint Venture| 1996
- 40
-
Silicon Reclaim Focus of New Joint Venture| 1996
- 42
-
Altera to Use SuperBGA Package| 1996
- 42
-
FEI and Philips Combine Operations| 1996
- 43
-
185 New Fab Lines by 2003| 1996
- 43
-
Matheson and IGP Form Mountain Electronic Gases| 1996
- 43
-
Venture Capital Investment Surges| 1996
- 48
-
SLI Achieves 20 Watt Semiconductor Laser| 1996
- 48
-
ESD Wrist Strap Grounding Standard Drafted| 1996
- 48
-
SIA Web Site Opens| 1996
- 50
-
Temic Reduces Costs| 1996
- 50
-
New Facility for Manufacturing High Purity Valves| 1996
- 50
-
NEC Opens New HQ| 1996
- 51
-
Stanford's McVittie Wins Annual "Thinker" Award| 1996
- 52
-
Letter to the Editor| 1996
- 56
-
Calendar| 1996
- 66
-
Establishing Standards for Reticle Carriers| 1996
- 66
-
Sub-0.5 m m Geometries Require Tighter Humidity Controls| 1996
- 66
-
Lithography News| 1996
- 72
-
Wafer Processing News| 1996
- 72
-
Controlling Oxide Layers on TiSi2| 1996
- 72
-
Applied Materials and IMEC to Research 0.25 m m Metalization Techniques| 1996
- 74
-
Contamination Control News| 1996
- 76
-
Assembly and Packaging News| 1996
- 76
-
Filler to Improve Thermal Management| 1996
- 80
-
Inspection, Measurement and Test News| 1996
- 82
-
European Report| 1996
- 89
-
Economic Indicator| 1996
- 92
-
Japan Report| 1996
- 114
-
Contamination Control in PVD Cluster Tools Through Mass Spectrometry| 1996
- 125
-
Vacuum Pump Designs to Meet Process Requirements| 1996
- 137
-
Local Planarization Process Developed for Higher Yields| 1996
- 149
-
Selective CVD of Titanium Silicide for Raised Source-Drains| 1996
- 157
-
Understanding the Basics of Process Pressure Control| 1996
- 167
-
Statistical Process Control for Semiconductor Metrology Systems| 1996
- 177
-
Integrated Defect Management Using a Knowledge-Based Approach| 1996
- 187
-
Design and Optimization of Fab Facility Gas Distribution| 1996
- 199
-
Scandinavia lnvestigates Silicon Carbide for High Power Products| 1996
- 199
-
Scandinavia Investigates Silicon Carbide for High Power Products| 1996
- 209
-
Materials For Multichip Modules| 1996
- 221
-
Optimized backgrind wafer process minimizes stress effectsMendelson, R. / Diefenderfer, D.F. / Gumbert, C.M. / Singh, B. et al. | 1996
- 221
-
Optimized Background Wafer Process Minimizes Stress Effects| 1996
- 229
-
AVS 43rd International Symposium: Historic Philadelphia is the setting for this year's AVS Symposium, Oct. 14-18| 1996
- 229
-
AVS 43rd International Symposium| 1996
- 233
-
Austin Hosts SEMICON-Southwest 96| 1996
- 233
-
Austin Hosts SEMICON/Southwest 96: Get "a taste of the Southwest" at the semiconductor equipment materials and services show, Oct. 13-18| 1996
- 233
-
SEMICON-Southwest Product Preview| 1996
- 244
-
New Products| 1996
- 266
-
People in the News| 1996
- 269
-
Company News| 1996
- 270
-
Sales Representatives| 1996
- 272
-
Classified Advertising| 1996
- 274
-
Advertisers' Index| 1996
- 276
-
Industry Observation: Reducing the Cost of Building a Fab| 1996